TIP42/TIP42A/TIP42B/TIP42C PNP Epitaxial Silicon Transistor Features • Medium Power Linear Switching Applications • Complement to TIP41/TIP41A/TIP41B/TIP41C TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector 3.Emitter TA=25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage : TIP42 : TIP42A : TIP42B : TIP42C - 40 - 60 - 80 - 100 V V V V VCEO Collector-Emitter Voltage : TIP42 : TIP42A : TIP42B : TIP42C - 40 - 60 - 80 - 100 V V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -6 A ICP Collector Current (Pulse) -10 A IB Base Current -2 A PC Collector Dissipation (TC=25°C) 65 W Collector Dissipation (TA=25°C) 2 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 to 150 °C © 2009 Fairchild Semiconductor Corporation TIP42/TIP42A/TIP42B/TIP42C Rev. B0 www.fairchildsemi.com 1 TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor December 2009 TA=25°C unless otherwise noted Symbol Parameter VCEO(sus) * Collector-Emitter Sustaining Voltage : TIP42 : TIP42A : TIP42B : TIP42C ICEO Test Condition IC = -30mA, IB = 0 Min. Max. -40 -60 -80 -100 Units V V V V Collector Cut-off Current : TIP42/42A : TIP42B/42C VCE = -30V, IB = 0 VCE = -60V, IB = 0 -0.7 -0.7 mA mA Collector Cut-off Current : TIP42 : TIP42A : TIP42B : TIP42C VCE = -40V, VEB = 0 VCE = -60V, VEB = 0 VCE = -80V, VEB = 0 VCE = -100V, VEB = 0 -400 -400 -400 -400 μA μA μA μA IEBO Emitter Cut-off Current VEB = -5V, IC = 0 -1 mA hFE * DC Current Gain VCE = -4V, IC = -0.3A VCE = -4V, IC = -3A ICES 30 15 75 VCE(sat) * Collector-Emitter Saturation Voltage IC = -6A, IB = -600mA -1.5 V VBE(sat) * Base-Emitter Saturation Voltage VCE = -4V, IC = -6A -2.0 V fT Current Gain Bandwidth Product VCE = -10V, IC = -500mA, f = 1MHz 3.0 MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% © 2009 Fairchild Semiconductor Corporation TIP42/TIP42A/TIP42B/TIP42C Rev. B0 www.fairchildsemi.com 2 TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor Electrical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = -4V 100 10 1 -0.01 -0.1 -1 -10 -2.0 IC/IB = 10 -1.6 VBE(sat) -1.2 -0.8 VCE(sat) -0.4 -0.0 -0.01 -0.1 IC[A], COLLECTOR CURRENT -10 -100 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 PC[W], POWER DISSIPATION -100 IC(MAX) (PULSE) -10 ms 0.5 s 5m IC(MAX) (DC) s 1m IC[A], COLLECTOR CURRENT -1 -1 TIP42 TIP42A TIP42B TIP42C -10 40 20 0 -100 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area Figure 4. Power derating © 2009 Fairchild Semiconductor Corporation TIP42/TIP42A/TIP42B/TIP42C Rev. B0 60 0 -0.1 -1 80 www.fairchildsemi.com 3 TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor Typical Performance Characteristics TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor Mechanical Dimensions TO-220 Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation TIP42/TIP42A/TIP42B/TIP42C Rev. B0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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