2-Phase Stepper-Motor Driver
TLE 4727
Bipolar IC
Overview
Features
• 2 × 0.7 amp. outputs
• Integrated driver, control logic and current control
(chopper)
• Fast free-wheeling diodes
• Max. supply voltage 45 V
• Outputs free of crossover current
• Offset-phase turn-ON of output stages
• All outputs short-circuit proof
• 5 V output for logic supply
• Error-flag for overload, open load, overtemperature
P-DIP-20-3
Type
Ordering Code
Package
TLE 4727
Q67000-A9099
P-DIP-20-3
Description
The TLE 4727 is a bipolar, monolithic IC for driving bipolar stepper motors, DC motors
and other inductive loads that operate on constant current. The control logic and power
output stages for two bipolar windings are integrated on a single chip which permits
switched current control of motors with 0.7 A per phase at operating voltages up to 16 V.
The direction and value of current are programmable for each phase via separate control
inputs. A common oscillator generates the timing for the current control and turn-on with
phase offset of the two output stages. The two output stages in a full-bridge configuration
include fast integrated free-wheeling diodes and are free of crossover current. The
device can be driven directly by a microprocessor in several modes by programming
phase direction and current control of each bridge independently.
A stabilized 5 V output allows the supply of external components up to 5 mA. With the
error output the TLE 4727 signals malfunction of the device. Setting the control inputs
high resets the error flag and by reactivating the bridges one by one the location of the
error can be found.
Semiconductor Group
1
1998-12-16
TLE 4727
Ι10
1
20
Ι 20
Ι 11
2
19
Ι 21
Phase 1
3
18
Phase 2
OSC
4
17
Error
GND
5
16
GND
GND
6
15
GND
Q11
7
14
Q21
R1
8
13
R2
+ VS
9
12
+ VL
Q12
10
11
Q22
IEP01191
Figure 1
Pin Configuration (top view)
Semiconductor Group
2
1998-12-16
TLE 4727
Pin Definitions and Functions
Pin No.
Function
1, 2, 19, 20
Digital control inputs IX0, IX1 for the magnitude of the current of
the particular phase.
Iset = 500 mA with RSense = 1 Ω
Current Control
IX1
IX0
Phase Current
Example of Motor
Status
H
H
0
No current 1)
H
L
0.14 × Iset
Hold
L
H
Iset
Normal mode
L
L
1.4 × Iset
Accelerate
1)
“No current” in both bridges inhibits the circuit and current consumption will sink
below 3 mA.
3
Input Phase 1; controls the current through phase winding 1. On
H-potential the phase current flows from Q11 to Q12, on L-potential
in the reverse direction.
4
Oscillator; works at typ. 25 kHz if this pin is wired to ground across
2.2 nF.
5, 6, 15, 16
Ground; all pins are connected at leadframe internally.
7, 10
Push-pull outputs Q11, Q12 for phase 1 with integrated freewheeling diodes.
8
Resistor R1 for sensing the current in phase 1.
9
Supply voltage; block to ground, as close as possible to the IC,
with a stable electrolytic capacitor of at least 47 µF in parallel with a
ceramic capacitor of 100 nF.
11, 14
Push-pull outputs Q22, Q21 for phase 2 with integrated free
wheeling diodes.
12
Logic supply voltage; internally generated 5 V voltage for logic
supply up to 5 mA; short circuit protected. Block to ground with a
stable electrolytic capacitor of 4.7 µF.
13
Resistor R2 for sensing the current in phase 2.
Semiconductor Group
3
1998-12-16
TLE 4727
Pin Definitions and Functions (cont’d)
Pin No.
Function
17
Error output; signals with "low" the errors: open load or short circuit
to ground of one or more outputs or short circuits of the load or
overtemperature.
18
Input phase 2; controls the current flow through phase winding 2.
On H-potential the phase current flows from Q21 to Q22, on
L-potential in the reverse direction.
Figure 2
Block Diagram
Semiconductor Group
4
1998-12-16
TLE 4727
Absolute Maximum Ratings
Temperature Tj = – 40 to 150 °C
Parameter
Symbol
Limit Values
min.
max.
Unit Remarks
Supply voltage
VS
– 0.3
45
V
–
Error outputs
VErr
IErr
– 0.3
–
45
3
V
mA
–
–
Logic supply voltage
VL
– 0.3
6.5
V
–
Output current of VL
IL
–5
1)
mA
1)
Output current
IQ
–1
1
A
–
Ground current
IGND
–2
–
A
–
Logic inputs
VIXX
– 15
15
V
IXX ; Phase X
Oscillator voltage
VOsc
– 0.3
6
V
–
R1, R2 input voltage
VRX
– 0.3
5
V
–
Junction temperature
Tj
Tj
–
–
125
150
°C
°C
–
Max. 10,000 h
Storage temperature
Tstg
– 50
125
°C
–
Rth ja
Rth ja
–
–
56
40
K/W –
K/W –
Rth
–
18
K/W Measured on pin 5
Thermal resistance
Junction ambient
Junction ambient (soldered on a
35 µm thick 20 cm2 PC board
copper area)
Junction case
jc
Int. limited
Note: Stresses above those listed here may cause permanent damage to the
device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Semiconductor Group
5
1998-12-16
TLE 4727
Operating Range
Parameter
Symbol
Limit Values
min.
max.
Unit Remarks
Supply voltage
VS
5
16
V
–
Current from logic supply
IL
–
5
mA
–
Case temperature
TC
– 40
110
°C
Measured on pin 5
Pdiss = 2 W
Output current
IQ
– 800
800
mA
–
Logic inputs
VIXX
–5
6
V
IXX ; Phase 1, 2
Error output
VErr
IErr
–
0
25
1
V
mA
–
–
Note: In the operating range, the functions given in the circuit description are fulfilled.
Characteristics
VS = 6 to 16 V; Tj = – 40 to 130 °C
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
IS
IS
1
20
2
30
3
50
mA
mA
IXX = H
IXX = L;
IQ1, 2 = 0 A
IOsc
VOscL
VOscH
fOsc
90
0.8
1.7
18
120
1.3
2.3
24
135
1.9
2.9
30
µA
V
V
kHz
–
–
–
COSC = 2.2 nF
Current Consumption
from + VS
from + VS
Oscillator
Output charging current
Charging threshold
Discharging threshold
Frequency
Semiconductor Group
6
1998-12-16
TLE 4727
Characteristics (cont’d)
VS = 6 to 16 V; Tj = – 40 to 130 °C
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
IQ
–2
0
2
mA
IX0 = H;
IX1 = H
Vch
Vcs
Vca
40
450
630
70
500
700
100
570
800
mV
mV
mV
IX0 = L; IX1 = H
IX0 = H; IX1 = L
IX0 = L; IX1 = L
VI
VIHy
IIL
IIL
IIH
1.2
–
– 10
– 100
–1
1.7
50
–1
– 20
0
2.2
–
1
–5
10
V
mV
µA
µA
µA
–
–
VI = 1.2 V
VI = 0 V
VI = 5 V
VErrSat
IErrL
50
–
200
–
500
10
mV
µA
IErr = 1 mA
VErr = 25 V
VL
4.5
5
6
V
Tj < 150 °C
1 mA < IL < 5 mA
VS = 6 to 45 V
Tjsd
Tjpa
∆Tj
140
120
10
150
130
20
160
140
30
°C
°C
K
IQ1, 2 = 0 A
VErr = L
∆Tj = Tjsd – Tjpa
Phase Current (VS = 9 to 16 V)
Mode “no current”
Voltage threshold of current
comparator at Rsense in mode:
Hold
Setpoint
Accelerate
Logic Inputs (IX1 ; IX0 ; phase X)
Threshold
Hysteresis
Low-input current
Low-input current
High-input current
Error Output
Saturation voltage
Leakage current
Logic Supply Output
Output voltage
Thermal Protection
Shutdown
Prealarm
Delta
Semiconductor Group
7
1998-12-16
TLE 4727
Characteristics (cont’d)
VS = 6 to 16 V; Tj = – 40 to 130 °C
Parameter
Symbol
Limit Values
min.
Unit Test Condition
typ.
max.
0.4
0.5
1000
0.95
1
0.6
0.8
1500
1.25
1.3
V
V
µA
V
V
IQ = – 0.5 A
IQ = – 0.7 A
VS = VQ = 40 V
IQ = 0.5 A
IQ = 0.7 A
IQ = 0.5 A
IQ = 0.5 A
IQ = 0.7 A
IQ = 0.7 A
VS = 40 V,
VQ = 0 V
IQ = – 0.5 A
IQ = – 0.7 A
IF = – 0.7 A
Power Output Sink
Diode Transistor Sink Pair
(D13, T13; D14, T14; D23, T23; D24, T24)
Saturation voltage
Saturation voltage
Reverse current
Forward voltage
Forward voltage
VsatI
VsatI
IRI
VFI
VFI
0.1
0.2
500
0.6
0.7
Power Output Source
Diode Transistor Source Pair
(D11, T11; D12, T12; D21, T21; D22, T22)
Saturation voltage; charge
Saturation voltage; discharge
Saturation voltage; charge
Saturation voltage; discharge
Reverse current
VsatuC
VsatuD
VsatuC
VsatuD
IRu
0.6
0.1
0.7
0.2
400
1.1
0.4
1.2
0.5
800
1.3
0.7
1.5
0.8
1200
V
V
V
V
µA
Forward voltage
Forward voltage
Diode leakage current
VFu
VFu
ISL
0.7
0.8
0
1.05
1.1
3
1.35
1.4
10
V
V
mA
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and
the given supply voltage.
Semiconductor Group
8
1998-12-16
TLE 4727
Quiescent Current IS versus Supply Voltage
VS; bridges not chopping; Tj = 25 °C
IED01780
60
ΙS
Quiescent Current IS versus Junction Temp.
Tj; bridges not chopping; VS = 14 V
mA
Ι QX =
50
0.70
A
0.50
A
IED01781
60
ΙS
Ι QX = 0.70 A
mA
50
0.50 A
40
40
0.07 A
0.07
A
30
30
20
20
10
10
0
5
10
15
V
0
-50
20
0
50
VS
Output Current IQX versus
Junction Temperature Tj
IED01769
kHz
f OSC
150
Tj
Oscillator Frequency fOSC versus
Junction Temperature Tj
30
C
IED01782
800
mA
700
V S = 14
C OSC = 2.2nF
Ι QX
Ι X1 = L, Ι X0 = L
600
25
500
Ι X1 = L, Ι X0 = H
400
300
20
VS = 14 V
RX = 1 Ω
200
100
15
-50
0
Semiconductor Group
50
0
-50
100 C 150
Tj
9
0
50
100 C 150
Tj
1998-12-16
TLE 4727
Output Saturation Voltages Vsat
versus Output Current IQ
Forward Current IF of Free-Wheeling
Diodes versus Forward Voltages VF
IED01771
2.0
V sat
ΙF
V S = 14 V
T j = 25 C
V
IED01198
1.0
A
V Fl
0.8
1.5
T j = 25 ˚C
0.6
V satuC
1.0
V Fu
0.4
V satl
V satuD
0.5
0
0.2
0
0
0.2
0.4
0.6 A 0.8
0
0.5
1.0
V
ΙQ
VF
Typical Power Dissipation Ptot versus
Output Current IQ (non stepping)
Permissible Power Dissipation Ptot versus
Case Temp. TC (measured at pin 5)
IED01772
4
P tot
C Osc
TC
3
IED01783
16
P tot
L phase x = 10 mH
R phase x = 2 Ω
W
1.5
W
= 2.2 nF
= 25 C
12
10
both phases active
2
8
V S = 14 V
T jmax =
150 C
6
120 C
1
4
2
0
0
0.2
0.4
0
-25
0.6 A 0.8
ΙQ
Semiconductor Group
10
0
25 50 75 100 125 C 175
TC
1998-12-16
TLE 4727
Input Characteristics of IXX , Phase X
Output Leakage Current
Logic Supply Output Voltage versus
Output Current IL
Logic Supply Output Voltage versus
Junction Temperature Tj
IED01784
6.0
VL
V
V
VL
T j = 25 C
V S = 14 V
5.5
5.0
4.5
4.5
0
1
2
3
4
4.0
-50
5 mA 6
ΙL
Semiconductor Group
Ι L = 5 mA
5.5
5.5
4.0
IED01785
6.0
11
VS = 14 V
0
50
100 C 150
Tj
1998-12-16
TLE 4727
+5 V
+12 V
4.7 µF
100 nF
Ι 10
2
Ι 11
3
MicroController
17
20
19
18
9
VS
12
VL
1
Q11
Phase 1
Q12
TLE 4727
Error
100 µF
Q21
Ι 20
Q22
Ι 21
7
10
14
11
M
Stepper
Motor
Phase 2
OSC
4
2.2 nF
13
R2
1Ω
8
GND
5, 6, 15, 16
R1
1Ω
IES01204
Figure 3
Application Circuit
Semiconductor Group
12
1998-12-16
TLE 4727
VL
10 µF
ΙL
100 µF
100 nF
+V L
ΙΙ
Ι Err
VΙ
VS
ΙS
+V S
V satu
Ι XX, Phase X
V Fu
Ι Rl
TLE 4727
Output
Error X
Ι Ru
ΙQ
V satl
Osc
V Err
Ι OSC
V OSC
R sense
GND
Ι SL Ι GND
2.2 nF
V Fl
Ι Rsense
VC
1Ω
IED01786
Figure 4
Test Circuit
Semiconductor Group
13
1998-12-16
TLE 4727
Normal Mode
Accelerate Mode
H
Ι 10
L
t
H
Ι 11
L
t
H
Phase 1
L
t
i acc
i set
Ι Q1
t
i set
i acc
i acc
i set
Ι Q2
t
i set
i acc
Phase 2
Ι 20
Ι 21
t
H
L
t
H
L
t
H
L
IED01776
Figure 5
Full-Step Operation
Semiconductor Group
14
1998-12-16
TLE 4727
Normal Mode
Accelerate Mode
H
L
Ι 10
t
H
L
Ι 11
t
H
L
Phase 1
t
i acc
i set
Ι Q1
t
- i set
- i acc
i acc
i set
Ι Q2
t
- i set
- i acc
Phase 2
H
L
Ι 20
H
L
Ι 21
H
L
t
t
t
IED01777
Figure 6
Half-Step Operation
Semiconductor Group
15
1998-12-16
TLE 4727
V Osc
V Osc
V Osc
t
Ι Rsense 1
0
t
Ι Rsense 2
0
t
V Q12
+VS
V FU
V satl
V ca
0
t
V Q11
+VS
V satu D
V satu C
V Q22
+VS
0
V Q21
+VS
t
Ι Q1
i acc
Ι Q2
t
i acc
t
Operating conditions:
VS
= 14 V
L phase x = 10 mH
R phase x = 4 Ω
Figure 7
Phase = H
Ι XX = L
IED01778
Current Control in Chop-Mode
Semiconductor Group
16
1998-12-16
TLE 4727
V Osc
2.3 V
1.3 V
0V
Oscillator
High Imped.
Phase change-over
t
Phase 1 H
L
t
Ι Rsense 1
0
t
V Q11
+ VS
High
Impedance
t
V Q12
+ VS
High
Impedance
t
Ι set
fast current
decay
Ι Phase 1
slow current decay
t
T1
- Ι set
Operating conditions:
VS
= 14 V
L phase 1 = 1 mH
R phase 1 = 4 Ω
Figure 8
Ι 11 = H for t < T 1
Ι 11 = L for t > T 1
Ι 10 = Ι 2X = H
slow current decay
IED01779
Phase Reversal and Inhibit
Semiconductor Group
17
1998-12-16
TLE 4727
Calculation of Power Dissipation
The total power dissipation Ptot is made up of
saturation losses Psat (transistor saturation voltage and diode forward voltages),
quiescent losses Pq
(quiescent current times supply voltage) and
switching losses Ps
(turn-ON / turn-OFF operations).
The following equations give the power dissipation for chopper operation without phase
reversal. This is the worst case, because full current flows for the entire time and
switching losses occur in addition.
Ptot = 2 × Psat + Pq + 2 × Ps
where
Psat ≅ IN {VsatI × d + VFu (1 – d) + VsatuC × d + VsatuD (1 – d)}
Pq
= Iq × VS
V S i D × t DON ( i D + i R ) × t ON I N
- + ----------------------------------- + ----- ( t DOFF + t OFF )
P S ≅ ------ --------------------T
2
2
4
IN
Iq
iD
iR
tp
tON
tOFF
tDON
tDOFF
T
d
Vsatl
VsatuC
VsatuD
VFu
VS
= nominal current (mean value)
= quiescent current
= reverse current during turn-ON delay
= peak reverse current
= conducting time of chopper transistor
= turn-ON time
= turn-OFF time
= turn-ON delay
= turn-OFF delay
= cycle duration
= duty cycle tp / T
= saturation voltage of sink transistor (TX3, TX4)
= saturation voltage of source transistor (TX1, TX2) during charge cycle
= saturation voltage of source transistor (TX1, TX2) during discharge cycle
= forward voltage of free-wheeling diode (DX1, DX2)
= supply voltage
Semiconductor Group
18
1998-12-16
TLE 4727
+VS
Tx2
Tx1
Dx1
L
Dx2
Tx4
Tx3
Dx3
Dx4
VC
R sense
IET01209
Figure 9
Voltage and
Current at
Chopper
Transistor
Turn-ON
Turn-OFF
iR
ΙN
iD
VS + VFu
VS + VFu
Vsatl
t D ON
t D OFF
t ON
tp
t OFF
t
IET01210
Figure 10 Voltage and Current at Chopper Transistor
Semiconductor Group
19
1998-12-16
TLE 4727
Application Hints
The TLE 4727 is intended to drive both phases of a stepper motor. Special care has
been taken to provide high efficiency, robustness and to minimize external components.
Power Supply
The TLE 4727 will work with supply voltages ranging from 5 V to 16 V at pin VS. Surges
exceeding 16 V at VS won’t harm the circuit up to 45 V, but whole function is not
guaranteed. As soon as the voltage drops below approximately 16 V the TLE 4727 works
promptly again.
As the circuit operates with chopper regulation of the current, interference generation
problems can arise in some applications. Therefore the power supply should be
decoupled by a 0.1 µF ceramic capacitor located near the package. Unstabilized
supplies may even afford higher capacities.
Current Sensing
The current in the windings of the stepper motor is sensed by the voltage drop across
Rsense. Depending on the selected current internal comparators will turn off the sink
transistor as soon as the voltage drop reaches certain thresholds (typical 0 V, 0.07 V,
0.50 V and 0.70 V ). These thresholds are not affected by variations of VS. Consequently
unstabilized supplies will not affect the performance of the regulation. For precise current
level it must be considered, that internal bonding wire (typ. 60 mΩ) is a part of Rsense.
Due to chopper control fast current rises (up to 10A/µs) will occur at the sensing
resistors. To prevent malfunction of the current sensing mechanism Rsense should be
pure ohmic. The resistors should be wired to GND as directly as possible. Capacitive
loads such as long cables (with high wire to wire capacity) to the motor should be
avoided for the same reason.
Synchronizing Several Choppers
In some applications synchronous chopping of several stepper motor drivers may be
desirable to reduce acoustic interference. This can be done by forcing the oscillator of
the TLE 4727 by a pulse generator overdriving the oscillator loading currents
(approximately ± 120 µA). In these applications low level should be between 0 V and
0.8 V while high level should be between 3 V and 5 V.
Semiconductor Group
20
1998-12-16
TLE 4727
Optimizing Noise Immunity
Unused inputs should always be wired to proper voltage levels in order to obtain highest
possible noise immunity.
To prevent crossconduction of the output stages the TLE 4727 uses a special break
before make timing of the power transistors. This timing circuit can be triggered by short
glitches (some hundred nanoseconds) at the Phase inputs causing the output stage to
become high resistive during some microseconds. This will lead to a fast current decay
during that time. To achieve maximum current accuracy such glitches at the Phase
inputs should be avoided by proper control signals.
To lower EMI a ceramic capacitor of max. 3 nF is advisable from each output to GND.
Thermal Shut Down
To protect the circuit against thermal destruction, thermal shut down has been
implemented.
Error Monitoring
The error output signals with low-potential one of the following errors:
overtemperature
implemented as pre-alarm; appears approximately 20 K before
thermal shut down.
short circuit
a connection of one output to GND for longer than 30 µs sets an
internal error flipflop. A phase change-over of the affected bridge
resets the flipflop. Being a separate flipflop for each bridge, the
error can be located in such way.
underload
the recirculation of the inductive load is watched. If there is no
recirculation after a phase change-over, the internal error flipflop is
set. Additionally an error is signaled after a phase change-over
during hold-mode.
Semiconductor Group
21
1998-12-16
TLE 4727
Package Outlines
P-DIP-20-3
(Plastic Dual In-line Package)
3.5 ±0.3
~ 1.2
1.5 max
2.54
0.45 +0.1
0.25 20x
6.4 -0.2
7.6 +1.2
25.3 -0.2
10
0.25 max
Index Marking
GPD05091
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
Semiconductor Group
0.25 +0.1
11
20
1
4.2 max
0.5 min
7.6 ±0.2
22
Dimensions in mm
1998-12-16