TMMBAT 41 ® SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges. MINIMELF (Glass) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value 100 V Forward Continuous Current Ti = 25 °C 100 mA IFRM Repetitive Peak Forward Current tp ≤ 1s δ ≤ 0.5 350 mA IFSM Surge non Repetitive Forward Current tp = 10ms 750 mA Ptot Power Dissipation Ti = 95 °C 100 mW Tstg Tj Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 °C °C TL Maximum Temperature for Soldering during 15s 260 °C Value Unit 300 °C/W VRRM IF Repetitive Peak Reverse Voltage Unit THERMAL RESISTANCE Symbol Rth(j-l) Test Conditions Junction-leads ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions VBR Tj = 25°C IR = 100µA VF* Tj = 25°C IF = 1mA Tj = 25°C IF = 200mA IR* Min. Typ. Max. 100 Unit V 0.4 0.45 V 1 VR = 50V Tj = 25°C 0.1 µA 20 Tj = 100°C DYNAMIC CHARACTERISTICS Symbol C Test Conditions Tj = 25°C VR = 1V f = 1MHz Min. Typ. 2 Max. Unit pF * Pulse test: tp ≤ 300µs δ < 2%. August 1999 Ed: 1A 1/4 TMMBAT 41 Figure 1. Forward current versus forward voltage at different temperatures (typical values). Figure 2. Forward current versus forward voltage (typical values). Figure 3. Reverse current versus junction temperature. Figure 4. Reverse current versus continuous reverse voltage (typical values). 2/4 TMMBAT 41 Figure 5. Capacitance C versus reverse applied voltage VR (typical values). 3/4 TMMBAT 41 PACKAGE MECHANICAL DATA MINIMELF Glass DIMENSIONS REF. A /B O Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 3.30 3.40 3.6 0.130 0.134 0.142 B 1.59 1.60 1.62 0.063 0.063 0.064 C 0.40 0.45 0.50 0.016 0.018 0.020 D 1.50 0.059 C C FOOT PRINT DIMENSIONS (Millimeter) 2 2.5 5 Marking: ring at cathode end. Weight: 0.05g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4