TN0104 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* Die† 40V 1.8Ω 1.6V 2.0A TN0104N3 — TN0104ND 40V 2.0Ω 1.6V 2.0A — TN0104N8 — 7 * Same as SOT-89. † Product supplied on 2000 piece carrier tape reels. MIL visual screening available Product marking for TO-243AA: Features TN1L* Low threshold —1.6V max. Where *=2-week alpha date code High input impedance Low input capacitance Fast switching speeds Low Threshold DMOS Technology Low on resistance These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Package Options Analog switches General purpose line drivers Telecom switches D Absolute Maximum Ratings G Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS TO-243AA (SOT-89) ± 20V Gate-to-Source Voltage Operating and Storage Temperature D S SGD TO-92 -55°C to +150°C Soldering Temperature* 300°C Note: See Package Outline section for dimensions. * For TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds. 7-31 TN0104 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TC = 25°C °C/W °C/W θja IDR* IDRM 0.80A 2.40A 1.0W 125 170 0.80A 2.40A 2.90A 1.6W† 15 78† 1.40A 2.90A TO-92 TO-243AA 1.40A θjc * ID (continuous) is limited by max rated Tj. TA = 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant P D increase possible on ceramic substrate. Electrical Characteristics Symbol (@ 25°C unless otherwise specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage 40 VGS(th) Gate Threshold Voltage 0.6 ∆VGS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current ON-State Drain Current ID(ON) RDS(ON) Static Drain-to-Source ON-State Resistance Typ Max VGS= 0V, ID = 1.0mA 1.6 V VGS = VDS, ID = 500µA -3.8 -5.0 mV/°C VGS = VDS, ID = 1.0mA 0.1 100 nA VGS = ±20V, VDS = 0V 1 µA VGS =0V, VDS = Max Rating 100 µA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C 0.35 VGS = 3V, VDS = 20V 1.1 2.0 2.6 VGS = 10V, VDS = 20V 5.0 VGS = 3V, ID = 50mA A 2.3 2.5 TO-92 1.5 1.8 Change in RDS(ON) with Temperature VGS = 5V, VDS = 20V 0.5 All Packages ∆RDS(ON) Conditions V TO-243AA VGS = 5V, ID = 250mA Ω 0.7 0.34 1.0 GFS Forward Transconductance Input Capacitance 70 COSS Common Source Output Capacitance 50 CRSS Reverse Transfer Capacitance 15 td(ON) Turn-ON Delay Time 3.0 5.0 tr Rise Time 7.0 8.0 td(OFF) Turn-OFF Delay Time 6.0 9.0 tf Fall Time 5.0 8.0 VSD Diode Forward TO-92 1.2 1.8 Voltage Drop TO-243AA %/°C VGS =10V, ID = 1A, VDS = 20V, ID = 0.5A pF VGS = 0V, VDS = 20V f = 1 MHz ns VDD = 20V, ID = 1A RGEN = 25Ω 0.45 VGS = 0V, ISD = 1.0A 2.0 Reverse Recovery Time VGS = 10V, ID = 1A VGS = 10V, ID = 1A 2.0 CISS trr Unit Ω † 300 V VGS = 0V, ISD = 0.5A ns VGS = 0V, ISD = 1A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. VDD Switching Waveforms and Test Circuit RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) t(OFF) tr td(OFF) OUTPUT Rgen tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 7-32 TN0104 Typical Performance Curves Output Characteristics Saturation Characteristics 3.75 3.75 3.0 VGS = 10V 2.25 ID (amperes) ID (amperes) 3.0 8V 1.5 6V 0.75 4V VGS = 10V 2.25 8V 1.5 6V 0.75 4V 2V 2V 0 0 0 10 20 30 40 0 50 2 4 VDS (volts) TA = -55 ° C 4 0.60 TA = 25° C 0.45 PD (watts) GFS (siemens) 10 5 VDS = 25V -25V TA = 125 ° C 0.30 3 TO-243AA (T A = 25°C) 2 TO-92 1 0.15 0 0 0 0.5 1.0 1.5 2.0 0 2.5 25 50 75 125 100 150 TC (° C) ID (amperes) Thermal Response Characteristics Maximum Rated Safe Operating Area 10 Thermal Resistance (normalized) 1.0 TO-39 (DC) ID (amperes) 8 Power Dissipation vs. Case Temperature Transconductance vs. Drain Current 0.75 1.0 6 VDS (volts) TO-92 (DC) TO-243AA (DC) (T A = 25°C) 0.1 0.01 0.1 1 10 0.8 0.6 0.4 VDS (volts) TO-92 P D = 1W T C = 25°C 0.2 0 0.001 100 TO-243AA TA = 25°C PD = 1.6W 0.01 0.1 tp (seconds) 7-33 1 10 7 TN0104 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 10 1.3 V GS = 5V 8 RDS(ON) (ohms) 1.1 1.0 6 VGS = 10V 4 2 0.9 0 0.8 -50 0 50 100 1 0 150 Tj (° C) Transfer Characteristics 3.0 V(th) and RDS Variation with Temperature TA = -55 ° C 1.4 1.4 1.2 1.2 25 ° C VDS = 25V 1.8 VGS(th) (normalized) 2.4 ID (amperes) 2 ID (amperes) 125° C 1.2 1.0 RDS(ON) @ 5V, 0.25A 0.8 0.8 V(th) @ 0.5mA 0.6 0.6 0 0.6 0.4 0 2 4 6 8 0.4 -50 10 1.0 0 50 100 150 Tj (° C) VGS (volts) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 100 VDS = 10V f = 1MHz 8 55pF VGS (volts) C (picofarads) 75 CISS 50 40V 6 4 COSS 25 2 CRSS 50pF 0 0 0 10 20 30 0.5 40 0.65 0.8 0.95 QG (nanocoulombs) VDS (volts) 7-34 1.1 1.25 RDS(ON) (normalized) BVDSS (normalized) 1.2