TN2435 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * Order Number / Package Product marking for TO-243AA: BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) TO-243AA* Die** TN4D❋ 350V 6.0Ω 1.0A TN2435N8 TN2435NW where ❋ = 2-week alpha date code Same as SOT-89. Product supplied on 2000 piece carrier tape reels. ** Die in wafer form. Features Low Threshold DMOS Technology ❏ High input impedance These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. ❏ Low input capacitance ❏ Fast switching speeds ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Supertex vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Logic level interfaces ❏ Solid state relays Package Option ❏ Power Management ❏ Analog switches ❏ Ringers ❏ Telecom switches D G D S Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* TO-243AA (SOT-89) -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN2435 Thermal Characteristics Package ID (continuous)* TO-243AA 365mA ID (pulsed) Power Dissipation @ TA = 25°C 1.6W† 1.8A θjc °C/W θja °C/W 15 78† IDR* IDRM 365mA 1.8A * ID (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current ID(ON) ON-State Drain Current RDS(ON) Static Drain-to Source ON-State Resistance Typ Max -5.5 100 10 1.0 0.5 1.0 A 15.0 10.0 6.0 1.7 Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time Unit V V mV/°C nA µA mA Ω %/°C m Ω ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Min 350 0.8 125 125 25 8 5 10 28 10 200 70 25 20 20 40 30 1.5 300 pF Conditions VGS = 0V, ID = 250µA VGS = VDS, ID= 1.0mA VGS = VDS, ID= 1.0mA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 4.5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3.0V, ID = 150mA VGS = 4.5V, ID = 250mA VGS = 10V, ID = 750mA VGS = 10V, ID = 750mA VDS = 25V, ID = 350mA VGS = 0V, VDS = 25V f = 1.0MHz ns VDD = 25V, ID = 750mA RGEN = 25Ω V ns VGS = 0V, ISD = 750mA VGS = 0V, ISD = 750mA Notes: 1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 TN2435 Typical Performance Curves Output Characteristics Saturation Characteristics 3.0 2.0 VGS = 10V 8V 6V 2.0 VGS = 10V 8V 6V 5V 1.6 ID (Amperes) ID (Amperes) 2.5 5V 1.5 4V 4V 1.2 3V 0.8 1.0 3V 0.5 2.5V 0.4 2.5V 0 0.0 0 10 20 30 40 0 50 2 4 6 8 10 VDS (Volts) VDS (Volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 1.0 2.0 V DS =15V TO-243AA T A =-55°C 1.5 PD (Watts) GFS (siemens) 0.8 0.6 T A =25°C 1.0 0.4 T A =125°C 0.5 0.2 0.0 0.0 0.0 0.5 1.0 1.5 2.0 0 25 50 ID (Amperes) 100 125 150 TC (°C) Maximum Rated Safe Operating Area Thermal Response Characteristics 10 Thermal Resistance (normalized) 1.0 TO-243AA (pulsed) 1.0 ID (amperes) 75 TO-243AA (DC) 0.1 0.01 TO-243AA P D = 1.6W T C = 25°C 0.8 0.6 0.4 0.2 T A =25°C 0 0.001 0.001 1 10 100 1000 VDS (Volts) 0.01 0.1 tp (seconds) 3 1.0 10 TN2435 Typical Performance Curves On Resistance vs. Drain Current BVDSS Variation with Temperature 1.2 20 1.0 VGS = 4.5V VGS = 3V 16 1.1 RDS(ON) (ohms) BVDSS (Normalized) BV @ 250µA 12 8 0.9 VGS = 10V 4 0.8 -50 0 50 100 0 0.0 150 0.5 1.0 1.5 2.0 2.5 TJ (°C) ID (Amperes) Transfer Characteristics VGS(TH) and RDS(ON) w/ Temperature 2.0 3.0 1.4 2.4 1.2 2.0 ID (Amperes) VGS(th) (normalized) TA = -55°C 1.6 TA = 150°C 1.2 0.8 VGS(th) @ 1mA 1.0 1.6 0.8 1.2 0.6 0.4 0.0 0 2 4 6 8 0.4 -50 10 0.8 RDS(ON) @ 10V, 0.75A VDS = 25V 0 50 RDS(ON) (normalized) TA = 25°C 100 VGS (Volts) TJ (°C) Capacitance vs. Drain Source Voltage Gate Drive Dynamic Characteristics 0.4 150 10 300 ID = 365mA f = 1MHz 8 VDS=10V 150 VGS (volts) C (picofarads) 225 CISS 6 VDS=40V 4 525pF 75 2 COSS 150pF CRSS 0 0 10 20 30 40 0 0.0 50 1.0 2.0 3.0 4.0 5.0 QG (nanocoulombs) VDS (Volts) 11/12/01 ©2001 Supertex Inc. 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