TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII) TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.) N Channel RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 8 S (typ.) Low leakage current : P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement−mode : P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 0.8~2.5 V (VDS = 10 V, ID = 1mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating P Channel N Channel Unit Drain-source voltage VDSS −30 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 30 V Gate-source voltage VGSS ±20 ±20 V Drain current DC (Note 1) ID −4.5 6 Pulse (Note 1) IDP −18 24 PD (1) 1.5 1.5 PD (2) 1.0 1.0 PD (1) 0.75 0.75 PD (2) 0.45 0.45 Drain power Single-device operation (Note 3a) dissipation (t = 10s) Single-device value at (Note 2a) dual operation (Note 3b) Drain power Single-device operation (Note 3a) dissipation (t = 10s) Single-device value at (Note 2b) dual operation (Note 3b) JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.080 g (typ.) A Circuit Configuration W 26.3 (Note 4a) 46.8 (Note 4b) Single pulse avalanche energy EAS Avalanche current IAR Repetitive avalanche energy Single-device value at operation (Note 2a, 3b, 5) EAR 0.10 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C −4.5 6 mJ A Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-05-17 TPC8401 Thermal Characteristics Characteristics Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 83.3 Rth (ch-a) (2) 125 Unit °C/W Rth (ch-a) (1) 167 Rth (ch-a) (2) 278 Marking TPC8401 Type * Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: a) VDD = −24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = −4.5 A b) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = 6.0 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: • on lower left of the marking indicates Pin 1. * shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.) 2 2002-05-17 TPC8401 P-ch Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA Drain cut−OFF current IDSS VDS = −30 V, VGS = 0 V — — −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V −30 — — V (BR) DSX ID = −10 mA, VGS = 20 V −15 — — Vth VDS = −10 V, ID = −1 mA −0.8 — −2.0 RDS (ON) VGS = −4 V, ID = −2.2 A — 51 65 RDS (ON) VGS = −10 V, ID = −2.2 A — 25 35 Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.2 A 3.5 7 — Input capacitance Ciss — 970 — Reverse transfer capacitance Crss — 180 — Output capacitance Coss — 370 — tr — 17 — ton — 20 — tf — 75 — toff — 160 — Qg — 28 — — 6 — — 12 — Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Rise time Turn−ON time VDS = −10 V, VGS = 0 V, f = 1 MHz V V mΩ S pF ns Switching time Fall time Turn−OFF time Total gate charge (Gate−source plus gate−drain) Gate−source charge 1 Qgs1 Gate−drain (“miller”) charge Qgd VDD ≈ −24 V, VGS = −10 V, ID = −4.5 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP — — — −18 A — — 1.2 V VDSF IDR = −4.5 A, VGS = 0 V 3 2002-05-17 TPC8401 N-ch Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ― ― ±10 µA Drain cut−OFF current IDSS VDS = 30 V, VGS = 0 V ― ― 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ― ― V (BR) DSX ID = 10 mA, VGS = −20 V 15 ― ― VDS = 10 V, ID = 1 mA 0.8 ― 2.5 RDS (ON) VGS = 4 V, ID = 3 A ― 21 32 RDS (ON) VGS = 10 V, ID = 3 A ― 14 21 Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A 4 8 ― Input capacitance Ciss ― 1700 ― ― 260 ― Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Vth VDS = 10 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Crss Output capacitance Coss ― 380 ― tr ― 10 ― ton ― 20 ― Rise time Turn−ON time V V mΩ S pF ns Switching time Fall time Turn−OFF time Total gate charge (Gate−source plus gate−drain) tf ― 35 ― toff ― 120 ― Qg ― 40 ― ― 28 ― ― 12 ― Gate−source charge 1 Qgs1 Gate−drain (“miller”) charge Qgd VDD ≈ 24 V, VGS = 10 V, ID = 6 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP — — — 24 A — — −1.2 V VDSF IDR = 6 A, VGS = 0 V 4 2002-05-17 TPC8401 P-ch DRAIN POWER DISSIPATION PD (W) PD – Ta 2.0 1.5 (1) (2) 1.0 (3) 0.5 0 0 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) t = 10 s (4) 50 100 150 200 AMBIENT TEMPERATURE Ta (°C) 5 2002-05-17 TPC8401 P-ch DRAIN POWER DISSIPATION PD (W) PD – Ta 2.0 1.5 (1) (2) 1.0 (3) 0.5 0 0 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) t = 10 s (4) 50 100 150 200 AMBIENT TEMPERATURE Ta (°C) 6 2002-05-17 TPC8401 P-ch 7 2002-05-17 TPC8401 N-ch 8 2002-05-17 TPC8401 N-ch DRAIN POWER DISSIPATION PD (W) PD – Ta 2.0 1.5 (1) (2) 1.0 (3) 0.5 0 0 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) t = 10 s (4) 50 100 150 200 AMBIENT TEMPERATURE Ta (°C) 9 2002-05-17 TPC8401 N-ch 10 2002-05-17 TPC8401 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 11 2002-05-17