TPCF8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF8402 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications • • • • Unit: mm Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) N Channel RDS (ON) = 38 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.) Low leakage current : P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement−mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR -30 30 V Gate-source voltage VGSS ±20 ±20 V (Note 1) ID -3.2 4.0 Pulse (Note 1) IDP -12.8 16.0 Single-device operation (Note 3a) PD (1) 1.35 1.35 Single-device value at dual operation(Note 3b) PD (2) 1.12 1.12 Single-device operation (Note 3a) PD (1) 0.53 0.53 Single-device value at dual operation(Note 3b) PD (2) 0.33 0.33 Single pulse avalanche energy(Note 4) EAS 0.67 2.6 mJ Avalanche current IAR -1.6 2.0 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) ― JEITA ― TOSHIBA 2-3U1B Weight: 0.011 g (typ.) DC Drain current JEDEC A Circuit Configuration 8 7 6 5 1 2 3 4 W Marking (Note 6) 8 5 F6B Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 1 4 2003-08-18 TPCF8402 Thermal Characteristics Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 92.6 Rth (ch-a) (2) 111.6 Rth (ch-a) (1) 235.8 Rth (ch-a) (2) 378.8 Unit °C/W °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) 25.4 25.4 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: P Channel: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −1.6 A N Channel: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 2.0 A Note 5: Repetitive rating; Pulse width limited by Max. Channel temperature. Note 6: Black round marking “●” locates on the left lower side of parts number marking “F6B indicates terminal No. 1. 2 2003-08-18 TPCF8402 P-ch Electrical Characteristics (Ta = 25°C) Gate leakage current Symbol IGSS Drain cut-off current Drain-source breakdown voltage Gate threshold voltage VGS = ±16 V, VDS = 0 V ±10 µA µA −10 −30 V (BR) DSX ID = −10 mA, VGS = 20 V −15 Vth VDS = −10 V, ID = −1 mA −0.8 −2.0 Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss VGS = −4.5 V, ID = −1.6A 80 105 VGS = −10 V, ID = −1.6 A 60 72 VDS = −10 V, ID = −1.6 A 2.9 5.9 600 VDS = −10 V, VGS = 0 V, f = 1 MHz 60 70 5.3 12 8.4 34 14 1.4 2.7 tr VGS ton tf toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd ID = −1.6 A VOUT 0V −10 4.7 Ω Switching time Total gate charge (gate-source plus gate-drain) Unit VDS = −30 V, VGS = 0 V |Yfs| Turn-off time Max ID = −10 mA, VGS = 0 V Forward transfer admittance Fall time Typ. IDSS RDS (ON) Turn-on time Min V (BR) DSS Drain-source ON resistance Rise time Test Condition RL = 9.38Ω Characteristics VDD ∼ − −15 V Duty < = 1%, tw = 10 µs VDD ∼ − −24 V, VGS = −10 V, ID = −3.2 A V V mΩ S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP −12.8 A 1.2 V VDSF IDR = −3.2 A, VGS = 0 V 3 2003-08-18 TPCF8402 N-ch Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Drain cut-off current IDSS VDS = 30 V, VGS = 0 V 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 V (BR) DSX ID = 10 mA, VGS = −20 V 15 VDS = 10 V, ID = 1 mA 1.3 2.5 VGS = 4.5 V, ID = 2.0 A 58 77 VGS = 10 V, ID = 2.0 A 38 50 VDS = 10 V, ID = 2.0 A 3.4 6.8 470 60 80 5.2 8.3 Gate threshold voltage Vth Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr VGS Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) 0V ton 4.7 Ω Turn-on time ID = 2.0 A VOUT 10 V RL = 7.5Ω Drain-source breakdown voltage tf toff Qgs1 Gate−drain (“miller”) charge Qgd V mΩ S pF ns 4.0 22 10 1.7 2.4 VDD ∼ − 15 V Duty < = 1%, tw = 10 µs Qg Gate−source charge 1 V VDD ≈ 24 V, VGS = 10 V, ID = 6 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP 16.0 A −1.2 V VDSF IDR = 4.0 A, VGS = 0 V 4 2003-08-18 TPCF8402 P-ch ID – VDS ID – VDS -5 -3.5 -10 -6 -3.0 -2.6 -2 -2.5 -1 -0.4 -4.5 -6 -6 -2.8 -0.8 -0.6 Drain-source voltage VDS -2.7 -4 -2.6 -2.5 VGS = -2.3 V 0 0 -1.0 0 (V) -2 -1 Common source Common source (V) Pulse test -6 Drain-source voltage VDS (A) (V) VDS – VGS ID Drain current -5 -4 -2.0 VDS = -10 V -4 -2 Ta = −55°C 100 0 -2 -1 Ta= 25℃ -1.6 Pulse test -1.2 -0.8 -1.6 -0.4 ID = -3.2A -0.8 25 -3 Gate-source voltage VGS 0 -5 -4 0 (V) -4 -2 Common source VDS = -10 V Pulse test Ta = 25°C Drain-source ON resistance RDS (ON) (mΩ) Common source Ta = −55°C 100 25 -0.3 -1 Drain current -3 ID -8 VGS -10 (V) RDS (ON) – ID 1000 10 1 -0.1 -6 Gate-source voltage Yfs – ID 100 Forward transfer admittance Yfs (S) -3 Drain-source voltage VDS ID – VGS -8 0 Common source Ta = 25°C Pulse test -3.0 -2 VGS = -2.3 -0.2 -3.5 (A) -2.7 Drain current Drain current ID (A) -2.8 -3 0 -10 -8 -4.5 ID -4 -10 Common source Ta = 25°C Pulse test Pulse test 100 -10 10 0.1 -10 VGS = -4.5 V -1 Drain current (A) 5 -10 ID (A) 2003-08-18 TPCF8402 P-ch RDS (ON) – Ta IDR – VDS 10 (A) 120 IDR ID = -0.8A, -1.5A, -4.5A VGS = -4.5V 90 Drain reverse current ID = -0.8A, -1.5A, -4.5A 60 VGS = -10V 30 Common source -10 5 -1.0 -3.0 3 VGS = 0 V -5.0 1 0.5 0.3 Common source Ta = 25°C Pulse test 0 −80 −40 0 40 80 120 Pulse test 0.1 0 160 0.3 Ambient temperature Ta (°C) 0.6 1.5 1.2 Drain-source voltage VDS (V) Vth – Ta Capacitance – VDS -2.0 (V) 1000 C (pF) Gate threshold voltage Vth Ciss Capacitance 0.9 100 Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 -0.1 -1.5 -1.0 Common source -0.5 VDS = -10 V ID = -1mA Pulse test -1 -3 -5 -10 Drain-source voltage VDS 0 −80 -30 -50 -100 −40 (V) 0 40 80 120 160 Ambient temperature Ta (°C) Dynamic input/output characteristics PD – Ta 2.0 -15 -30 Device mounted on a glass-epoxy board (a) (Note 2a) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (1) Drain-source voltage VDS Drain power dissipation (4)Single-device value at dual operation (Note 3b) ｔ＝5s 1.2 (2) 0.8 (3) 0.4 -25 (V) (V) (2)Single-device value at dual operation (Note 3b) 1.6 PD (W) (1)Single-device operation (Note 3a) VDS VDD = -24V VGS -20 -10 VDD = -6V -15 -12 -10 -24 -6 40 80 120 160 0 0 200 Ambient temperature Ta (°C) -5 source Ta = 25°C Pulse test 4 8 Total gate charge 6 Common ID = -3.2 A -5 (4) 0 0 -12 Gate-source voltage VGS Drain-source ON resistance RDS (ON) (mΩ) 150 12 0 16 Qg (nC) 2003-08-18 TPCF8402 P-ch rth – tw Transient thermal impedance rth (℃/W) 1000 Single pulse (4) (3) (2) (1) 100 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area -100 -10 1 ms * Drain current ID (A) ID max (pulseed) * 10 ms * -1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. -0.1 -0.1 -1 VDSS max -10 Drain-source voltage VDS -100 (V) 7 2003-08-18 TPCF8402 N-ch ID – VDS ID – VDS 10 4.5 3.8 3.5 8.0 Common source Ta = 25°C Pulse test 6.0 ID 3 10 Common source Ta = 25°C Pulse test 8.0 3.8 6.0 4.5 8 3.2 Drain current Drain current ID (A) 4 10 (A) 5 2 3.0 1 6 3.5 4 3.2 2 3.0 VGS = 2.8 V 0 0 0.4 0.2 0.8 0.6 Drain-source voltage VDS 0 1.0 VGS = 2.8 V 0 (V) 2 1 Drain-source voltage ID – VGS 8 (V) Drain-source voltage VDS (A) 6 ID Drain current Common source Ta= 25℃ Pulse tset 4 2 25 100 2 1 3 1.2 0.8 0.4 0 5 4 VGS Pulse test 1.6 2 ID = 4A 1 Ta = −55°C Gate-source voltage 0 (V) 2 4 6 Gate-source voltage Yfs – ID 8 VGS 10 (V) RDS (ON) – ID 100 100 Common source Yfs (S) VDS = 10 V Pulse test Drain-source ON resistance RDS (ON) (mΩ) Forward transfer admittance (V) VDS – VGS VDS = 10 V 0 5 4 VDS 2.0 Common source 0 3 Ta = −55°C 10 100 25 1 4.5 VGS = 10V 30 Common source Ta = 25°C 0.1 0 0.3 1 Drain current 3 ID 10 0.1 10 (A) Pulse test 1 Drain current 8 10 ID (A) 2003-08-18 TPCF8402 N-ch RDS (ON) – Ta IDR – VDS 10 120 Common source (A) IDR ID = 4A 2A 80 Drain reverse current Drain-source ON resistance RDS (ON) (m Ω) 10 Pulse test 100 1A VGS = 4.5V 60 40 VGS = 10V ID = 4, 2, 1A 20 5.0 3.0 5 1.0 3 VGS = 0 V 1 0.5 0.3 Common source Ta = 25°C Pulse test 0 −80 −40 0 40 80 120 0.1 0 160 -0.4 -0.2 Ambient temperature Ta (°C) -0.6 -1.0 -0.8 Drain-source voltage VDS -1.2 (V) Vth – Ta Capacitance – VDS 1000 3 Gate threshold voltage Vth 100 Coss Capacitance C (pF) (V) Ciss Crss 10 Common source VGS = 0 V f = 1 MHz 2 1 Common source VDS = 10 V ID = 1mA Pulse test Ta = 25°C 1 0.1 1 0.3 3 5 10 Drain-source voltage VDS 30 50 0 −80 100 −40 (V) 0 40 80 120 160 Ambient temperature Ta (°C) Dynamic input/output characteristics PD – Ta 15 30 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (4)Single-device value at dual operation (Note 3b) ｔ＝5s 1.2 (2) 0.8 (3) 0.4 (V) VDS 25 VDD = 24V VGS 20 10 VDD = 6V 15 12 Common source 10 24 6 40 80 120 160 0 0 200 Ambient temperature Ta (°C) ID = 4.0A 5 Ta = 25°C 5 Pulse test (4) 0 0 12 4 8 12 VGS (1) (3)Single-device operation (Note 3a) Gate-source voltage Device mounted on a glass-epoxy board (b) (Note 2b) Drain-source voltage VDS Drain power dissipation (V) (2)Single-device value at dual operation (Note 3b) 1.6 PD (W) (1)Single-device operation (Note 3a) 0 16 total gate charge Qg (nC) 9 2003-08-18 TPCF8402 N-ch rth – tw Transient thermal impedance rth (℃/W) 1000 Single Pulse (4) (3) (2) (1) 100 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area 100 1 ms * 10 Drain current ID (A) ID max (Pulsed) * 10 ms * 1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 Drain-source voltage VDS 100 (V) 10 2003-08-18 TPCF8402 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 11 2003-08-18