TOSHIBA TPCA8105

TPCA8105
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCA8105
Notebook PC Applications
Portable Equipment Applications
Unit: mm
0.4±0.1
1.27
0.5±0.1
•
Low drain-source ON resistance : RDS (ON) = 23 mΩ (typ.)
•
High forward transfer admittance :|Yfs| = 14 S (typ.)
•
Low leakage current : IDSS = −10 µA (VDS = −12 V)
•
Enhancement mode
5.0±0.2
Small footprint due to compact and slim package
6.0±0.3
0.15±0.05
4
1
: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA )
0.595
5.0±0.2
A
0.95±0.05
0.166±0.05
0.05 S
S
0.6±0.1
1
1.1±0.2
4
3.5±0.2
•
0.05 M A
5
8
4.25±0.2
Absolute Maximum Ratings (Ta = 25°C)
8
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−12
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−12
V
Gate-source voltage
VGSS
±8
V
DC
(Note 1)
ID
−6
Pulse
(Note 1)
IDP
−24
Drain power dissipation (Tc = 25°C)
PD
20
Drain power dissipation (t = 10 s)
(Note 2a)
PD
2.8
Drain power dissipation (t = 10 s)
(Note 2b)
PD
1.6
EAS
25.1
mJ
Avalanche current
IAR
−6
A
Repetitive avalanche energy
(Tc = 25°C) (Note 4)
EAR
0.8
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
Single pulse avalanche energy
(Note 3)
A
5
1, 2, 3: Source
5, 6, 7, 8: Drain
0.8±0.1
4: Gate
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-5Q1A
Weight: 0.076 g (typ.)
W
Circuit Configuration
8
7
6
5
1
2
3
4
Note: For (Note 1), (Note 2), (Note 3), (Note 4), refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
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TPCA8105
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case (Tc = 25 ℃)
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Rth (ch-a)
44.6
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)
Rth (ch-b)
78.1
°C/W
Marking (Note 5)
TPCA
8105
Type
Lot No.
※
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD = −10 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −6.0 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: ※ Weekly code:
(Three digits)
Week of manufacture
(01 for first week of a year, continues up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
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TPCA8105
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0 V
⎯
⎯
±10
µA
Drain cut-off current
IDSS
VDS = −12 V, VGS = 0 V
⎯
⎯
−10
µA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−12
⎯
⎯
V (BR) DSX
ID = −10 mA, VGS = 8 V
−4
⎯
⎯
Vth
Drain-source ON resistance
Forward transfer admittance
RDS (ON)
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
Turn-on time
tr
VDS = −10 V, ID = −200 µA
−0.5
⎯
−1.2
VGS = −1.8 V, ID = −1.5 A
⎯
65
92
VGS = −2.5 V, ID = −3.0 A
⎯
36
51
VGS = −4.5 V, ID = −3.0 A
⎯
23
33
VDS = −10 V, ID = −3.0 A
7
14
⎯
⎯
1600
⎯
⎯
260
⎯
⎯
335
⎯
⎯
7
⎯
⎯
13
⎯
VDS = −10 V, VGS = 0 V, f = 1 MHz
VGS
0V
ton
Switching time
Fall time
Turn-off time
ID = −3.0A
Output
−5 V
RL = 2 Ω
Gate threshold voltage
4.7 Ω
Drain-source breakdown
voltage
tf
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“Miller”) charge
Qgd
VDD ∼
− −6 V
Duty <
= 1%, tw = 10 µs
VDD ≈ −10 V, VGS = −5 V
ID = −6 A
V
V
mΩ
S
pF
ns
⎯
21
⎯
⎯
68
⎯
⎯
18
⎯
⎯
14.5
⎯
⎯
3.5
⎯
Min
Typ.
Max
Unit
⎯
⎯
−24
A
⎯
⎯
1.2
V
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
⎯
IDRP
VDSF
IDR = −6 A, VGS = 0 V
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TPCA8105
ID – VDS
Drain current ID (A)
−4
−5
−2.5
−1.9
ID – VDS
−1.8
−10
−1.7
−3
−4
−1.6
−3
−1.5
−2
VGS = −1.4 V
−1
−8
−0.2
−0.4
−0.6
−0.8
Drain−source voltage
VDS
−1.8
−6
−1.7
−4
−1.6
−1.5
−2
VGS = −1.4 V
0
0
−1.0
(V)
−1
−2
Ta = 25°C
Ta = −55°C
−2
Ta = 100°C
−0.5
−1.0
−1.5
Gate−source voltage VGS
Ta = 25°C
Pulse test
−2.0
−0.4
−0.3
−0.2
ID = −6 A
−0.1
−3 A
−1.5 A
0
0
−2.5
(V)
−2
−4
Ta = 25°C
10
Ta = 100°C
1
−1
−10
(V)
Common source
Ta = 25°C
Pulse test
Ta = −55°C
Drain−source ON resistance
RDS (ON) (mΩ)
Forward transfer admittance ⎪Yfs⎪ (S)
Common source
0.1
−0.1
−8
RDS (ON) – ID
1000
VDS = −10 V
Pulse test
−6
Gate−source voltage VGS
|Yfs| – ID
100
(V)
Common source
(V)
VDS
Drain−source voltage
Drain current ID (A)
−6
0
0
−5
VDS – VGS
VDS = −10 V
Pulse test
−4
−4
VDS
−0.5
Common source
−8
−3
Drain−source voltage
ID – VGS
−10
−1.9
−5
Common source
Ta = 25°C Pulse test
0
0
−2.5 −2 Common source
Ta = 25°C Pulse test
−3
−4
−2
−4.5
Drain current ID (A)
−5
−10
−2.5 V
VGS = −4.5 V
10
1
−0.1
−100
−1.8 V
100
−1
−10
Drain currrent ID
Drain current ID (A)
4
−100
(A)
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TPCA8105
RDS (ON) – Tc
160
IDR – VDS
−100
Pulse test
(A)
VGS = −1.8 V
Drain reverse current IDR
Drain−source ON resistance
RDS (ON) (m Ω)
Common source
Common source
Ta = 25°C
Pulse test
120
ID = −2.5 A
80
−6 A
ID = −1.5 A
40
ID = −1.5, −2.5, −6 A
−4.5 V
0
−80
−2.5 A
ID = −1.5 A
−2.5 V
−40
0
40
Case temperature
80
120
Tc
−4.5
VGS = 0 V
0.4
(°C)
0.8
−2.0
Gate threshold voltage Vth (V)
Ta = 25°C
Capacitance C
(pF)
Ciss
1000
Coss
Crss
100
−1
1.6
2.0
VDS (V)
Vth – Ta
VGS = 0 V
f = 1 MHz
10
−0.1
1.2
Drain−source voltage
Capacitance – VDS
10000
−1
−10
−1
0
160
−2.5 −1.8
−10
−1.5
Common source
VDS = −10 V
ID = −200 µA
Pulse test
−1.0
−0.5
0
−80
−100
Drain−source voltage VDS (V)
−40
0
40
80
Case temperature Tc
120
160
(°C)
Dynamic input/output characteristics
Drain−source voltage
VDS
(V)
ID = −6 A
Ta = 25°C
−16
−20
−16
Pulse test
−12
−12
VGS
−8
VDS
VDD = −10 V
−4
0
0
−8
−2.5 V
−4
−5 V
8
16
Total gate charge
24
Qg
32
VGS (V)
Common source
Gate-source voltage
−20
0
40
(nC)
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TPCA8105
rth – tw
rth (℃/W)
1000
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(2)
(3) Tc=25℃
Transient thermal impedance
100
(1)
10
(3)
1
SINGLE PULSE
0.1
0.001
0.01
0.1
1
Pulse width
tw
100
PD – Tc
25
Drain power dissipation PD (W)
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
t = 10s
(1)
2.5
2.0
(2)
1.5
1.0
0.5
0
0
40
80
Ambient temperature
1000
(s)
PD – Ta
3.0
Drain power dissipation PD (W)
10
120
20
15
10
5
0
160
Ta (°C)
0
40
80
120
160
Case temperature Tc(°C)
Safe operating area
100
Drain current ID
(A)
ID max (Pulsed) *
t=1ms
10ms
10
ID max (Continuous) *
DC OPEATION
1
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.1
0.1
1
10
100
Drain−source voltage VDS (V)
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TPCA8105
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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