TI TPS62092RGTT

TPS62090, TPS62091
TPS62092, TPS62093
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SLVSAW2A – MARCH 2012 – REVISED MARCH 2012
3A High Efficient Synchronous Step Down Converter with DCS™ Control
Check for Samples: TPS62090, TPS62091, TPS62092, TPS62093
FEATURES
DESCRIPTION
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
The TPS6209x device family is a high frequency
synchronous step down converter optimized for small
solution size, high efficiency and suitable for battery
powered applications. To maximize efficiency, the
converter operates in PWM mode with a nominal
switching frequency of 2.8 MHz/1.4 MHz and
automatically enters Power Save Mode operation at
light load currents. When used in distributed power
supplies and point of load regulation, the device
allows voltage tracking to other voltage rails and
tolerates output capacitors ranging from 10 µF up to
150 µF and beyond. Using the DCS™ Control
topology the device achieves excellent load transient
performance and accurate output voltage regulation.
1
2
2.5 V to 6 V Input Voltage Range
DCS™ Control
95% Converter Efficiency
Power Save Mode
20 µA Operating Quiescent Current
100% Duty Cycle for Lowest Dropout
2.8 MHz/1.4 MHz Typical Switching Frequency
0.8 V to VIN Adjustable Output Voltage
Fixed Output Voltage Versions
Output Discharge Function
Adjustable Softstart
Two Level Short Circuit Protection
Output Voltage Tracking
Wide Output Capacitance Selection
Available in 3x3mm 16 Pin QFN Package
APPLICATIONS
•
•
•
•
•
Distributed Power Supplies
Notebook, Netbook Computers
Hard Disk Drivers
Processor Supply
Battery Powered Applications
The output voltage start-up ramp is controlled by the
softstart pin, which allows operation as either a
standalone power supply or in tracking configurations.
Power sequencing is also possible by configuring the
Enable and Power Good pins. In Power Save Mode,
the device operates at typically 20 µA quiescent
current. Power Save Mode is entered automatically
and seamlessly maintaining high efficiency over the
entire load current range.
100
L1
470nH
Vin
2.5V to 6V
12
11
C1
10mF
10
C3
10nF
SW
PVIN
SW
AVIN
VOS
7
CN
9 SS
2
16
FREQ
3
AGND 6
PGND PGND
14
C2
22mF
R3
500k
PG 4
CP
15
95
Vout
1.8V/3A
1
FB 5
13 EN
8
C4
10nF
PVIN
Power Good
90
Efficiency (%)
TPS62090
85
80
75
70
65
60
55
50
100m
VOUT = 3.3 V
L = 1 µH
f = 1.4 MHz
1
VIN = 3.7 V
VIN = 4.2 V
VIN = 5 V
10
100
I load (mA)
1k
10k
G002
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated
TPS62090, TPS62091
TPS62092, TPS62093
SLVSAW2A – MARCH 2012 – REVISED MARCH 2012
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION (1)
TA
VOUT
ORDERING
PACKAGE
PACKAGE MARKING
adjustable
TPS62090
RGT
SBW
3.3 V
TPS62091
RGT
SBX
2.5 V
TPS62092
RGT
SBY
1.8 V
TPS62093
RGT
SBZ
-40°C to 85°C
(1)
For detailed ordering information please see the PACKAGE OPTION ADDENDUM section at the end
of the datasheet.
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
VALUE
Voltage range
Power Good sink current
ESD rating
MIN
MAX
PVIN, AVIN, FB, SS, EN, FREQ, VOS (2)
–0.3
7
SW, PG
–0.3
VIN+0.3
V
1
mA
Human Body Model
2
kV
500
V
Charged Device Model
See the Thermal Table
Operating junction temperature range, TJ
–40
Operating ambient temperature range, TA
Storage temperature range, Tstg
(2)
V
PG
Continuous total power dissipation
(1)
UNIT
150
°C
–40
85
°C
–65
150
°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
THERMAL INFORMATION
TPS62090
THERMAL METRIC (1)
θJA
Junction-to-ambient thermal resistance
47
θJCtop
Junction-to-case (top) thermal resistance
60
θJB
Junction-to-board thermal resistance
20
ψJT
Junction-to-top characterization parameter
1.5
ψJB
Junction-to-board characterization parameter
20
θJCbot
Junction-to-case (bottom) thermal resistance
5.3
(1)
UNITS
QFN (16 PINS)
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
RECOMMENDED OPERATING CONDITIONS (1)
MIN
VIN
Input voltage range VIN
2.5
TA
Operating ambient temperature
TJ
Operating junction temperature
(1)
2
TYP
MAX
UNIT
6
V
–40
85
°C
–40
125
°C
See the application section for further information
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SLVSAW2A – MARCH 2012 – REVISED MARCH 2012
ELECTRICAL CHARACTERISTICS
VIN = 3.6V, TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
VIN
Input voltage range
IQIN
Quiescent current
Not switching, FB = FB +5 %, Into PVIN and AVIN
20
Isd
Shutdown current
Into PVIN and AVIN
0.6
5
Undervoltage lockout threshold
VIN falling
2.2
2.3
UVLO
2.5
2.1
Undervoltage lockout hysteresis
Thermal shutdown
Temperature rising
Thermal shutdown hysteresis
6
V
µA
µA
V
200
mV
150
ºC
20
ºC
Control SIGNALS EN, FREQ
VH
High level input voltage
VIN = 2.5 V to 6 V
VL
Low level input voltage
VIN = 2.5 V to 6 V
Ilkg
Input leakage current
EN, FREQ = GND or VIN
RPD
Pull down resistance
1
V
10
0.4
V
100
nA
400
kΩ
Softstart
ISS
Softstart current
6.3
7.5
8.7
µA
POWER GOOD
Vth
Power good threshold
VL
Low level voltage
IPG
PG sinking current
Ilkg
Leakage current
Output voltage rising
95%
Output voltage falling
90%
I(sink) = 1mA
0.4
V
1
mA
100
nA
VPG = 3.6V
10
High side FET on-resistance
ISW = 500 mA
50
mΩ
Low side FET on-resistance
ISW = 500 mA
40
mΩ
POWER SWITCH
RDS(on)
ILIM
High side FET switch current
limit
fs
Switching frequency
3.7
4.6
5.5
A
FREQ = GND, IOUT = 3 A
2.8
MHz
FREQ = VIN, IOUT = 3 A
1.4
MHz
OUTPUT
Vs
Output voltage range
Rod
Output discharge resistor
0.8
VFB
Feedback regulation voltage
EN = GND, VOUT = 1.8 V
VIN
V
200
Ω
0.8
V
VIN ≥ VOUT + 1 V, TPS62090 adjustable output version
Feedback voltage
accuracy (1) (2) (3)
VFB
IFB
Feedback input bias current
IOUT = 1 A, PWM mode
-1.4%
+1.4%
IOUT = 0 mA, FREQ = 2.8 MHz, VOUT ≥ 0.8 V, PFM mode
-1.4%
+3%
IOUT = 0 mA, FREQ = 1.4 MHz, VOUT ≥ 1.2 V, PFM mode
-1.4%
+3%
IOUT = 0 mA, FREQ = 1.4 MHz, VOUT < 1.2V, PFM mode
-1.4%
+3.7%
VFB = 0.8V, TPS62090 adjustable output version
10
100
nA
VIN ≥ VOUT + 1 V, Fixed output voltage
VOUT
(1)
(2)
(3)
Output voltage accuracy
(2) (3)
IOUT = 1 A, PWM mode
-1.4%
+1.4%
OUT = 0 mA, FREQ = High and Low, PFM mode
-1.4%
+2.5%
Line regulation
VOUT = 1.8 V, PWM operation
0.016
%/V
Load regulation
VOUT = 1.8 V, PWM operation
0.04
%/A
For output voltages < 1.2 V, use a 2 x 22 µF output capacitance to achieve +3% output voltage accuracy.
Conditions: f = 2.8 MHz, L = 0.47 µH, COUT = 22 µF or f = 1.4 MHz, L = 1 µH, COUT = 22 µF.
For more information, see the Power Save Mode Operation section of this data sheet.
Copyright © 2012, Texas Instruments Incorporated
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DEVICE INFORMATION
PG
4
EN
14
13
12
11
Exposed
Thermal Pad*
10
5
6
7
8
9
PVIN
PVIN
AVIN
SS
CN
3
PGND
FREQ
15
CP
2
PGND
SW
16
AGND
1
FB
SW
VOS
16 PIN 3x3mm QFN
TOP VIEW
NOTE: *The exposed Thermal Pad is connected to AGND.
PIN FUNCTIONS
PIN
I/O
DESCRIPTION
NAME
NO.
SW
1, 2
I
Switch pin of the power stage.
FREQ
3
I
This pin selects the switching frequency of the device. FREQ=low sets the typical switching frequency to 2.8
MHz. FREQ=high sets the typical switching frequency to 1.4 MHz. This pin has an active pull down resistor of
typically 400 kΩ and can be left floating for 2.8 MHz operation.
PG
4
O
Power good open drain output. This pin is high impedance if the output voltage is within regulation. This pin is
pulled low if the output is below its nominal value. The pull up resistor can not be connected to any voltage
higher than the input voltage of the device.
FB
5
Feedback pin of the device. For the fixed output voltage versions this pin needs to be connected to GND for
improved thermal performance. If, desired then this pin can also be left floating since it is internally connected
with 400 kΩ to GND for fixed output voltage versions.
AGND
6
Analog ground.
CP
7
Internal charge pump flying capacitor. Connect a 10 nF capacitor between CP and CN.
CN
8
Internal charge pump flying capacitor. Connect a 10 nF capacitor between CP and CN.
SS
9
AVIN
10
PVIN
11,12
EN
13
PGND
14,15
VOS
16
Thermal Pad
4
I
Soft-start control pin. A capacitor is connected to this pin and sets the softstart time. Leaving this pin floating
sets the minimum start-up time.
Bias supply input voltage pin.
Power supply input voltage pin.
Device enable. To enable the device this pin needs to be pulled high. Pulling this pin low disables the device.
This pin has an active pull down resistor of typically 400 kΩ.
Power ground connection.
Output voltage sense pin. This pin needs to be connected to the output voltage.
The exposed thermal pad is connected to AGND.
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SLVSAW2A – MARCH 2012 – REVISED MARCH 2012
FUNCTIONAL BLOCK DIAGRAM
CP
PG
PVIN
CN
Charge Pump
for
Gate driver
VFB
Hiccup
current limit
#32 counter
VREF
High Side
Current
Sense
Bandgap
Undervoltage
Lockout
Thermal shutdown
AVIN
PVIN
EN
M1
400kΩ
SW
MOSFET Driver
Anti Shoot Through
Converter Control
Logic
AGND
SW
High =1.4 MHz
Low = 2.8 MHz
FREQ
400kΩ
M2
PGND
PGND
Comparator
ramp
Timer
ton
Direct Control
and
Compensation
Error Amplifier
VOS
R1
(1)
Adjustable
only
Vref
0.8V
R2
(1)
FB
(1)
R3
400kΩ
Vin
DCS - Control™
200Ω
Iss
Voltage clamp
Vref
SS
÷1.56
EN
(1)
Output voltage
discharge
logic
M3
R1, R2, R3 are implemented in the fixed output voltage version only.
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Table 1. List of components
REFERENCE
DESCRIPTION
MANUFACTURER
TPS62090
High efficient step down converter
Texas Instruments
L1
Inductor: 1uH, 0.47uH, 0.4uH
Coilcraft XFL4020-102, XAL4020-401, TOKO DEF252012-R47
C1
Ceramic capacitor: 10uF, 22uF
(6.3V, X5R, 0603), (6.3V, X5R, 0805)
C2
Ceramic capacitor: 22uF
(6.3V, X5R, 0805)
C3, C4
Ceramic capacitor
Standard
R1, R2, R3
Resistor
Standard
TPS62090
Vin
2.5V to 6V
12
11
C1
10
PVIN
SW
PVIN
SW
AVIN
VOS
13 EN
C3
7
8
C4
L1
FB
9 SS
Vout
R1
2
C2
16
R2
5
R3
PG 4
CP
CN
1
FREQ
3
Power Good
Vin or GND
AGND 6
PGND PGND
14
15
Figure 1. Parametric Measurement Circuit
6
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TYPICAL CHARACTERISTICS
FIGURE
vs load current (VO = 3.3 V, f = 1.4 MHz, f = 2.8 MHz)
Figure 2, Figure 3
Efficiency
vs load current (VO = 1.8 V, f = 1.4 MHz, f = 2.8 MHz)
Figure 4, Figure 5
Efficiency
vs load current (VO = 1.05 V, f = 1.4 MHz, f = 2.8 MHz)
Figure 6, Figure 7
Output voltage
vs load current (VO = 1.8 V, f = 1.4 MHz, f = 2.8 MHz)
Figure 8, Figure 9
High Side FET on-resistance
vs input voltage
Figure 10
Switching frequency
vs load current (VO = 1. 8 V, f = 1.4 MHz)
Figure 11
Switching frequency
vs input voltage (VO = 1.8 V, f = 1.4 MHz)
Figure 12
Switching frequency
vs load current (VO = 1. 8 V, f = 2.8 MHz)
Figure 13
Switching frequency
vs input voltage (VO = 1.8 V, f = 2.8 MHz)
Figure 14
Quiescent current
vs input voltage ( VO = 1.8 V, f = 1.4 MHz)
Figure 15
PWM operation
VO = 1.8 V, f = 1.4 MHz
Figure 16
PFM operation
VO = 1.8 V, f = 1.4 MHz
Figure 17
PFM operation
VO = 1.8 V, f = 2.8 MHz
Figure 18
Load sweep
VO = 1.8 V, f = 1.4 MHz
Figure 19
Load sweep
VO = 1.8 V, f = 2.8 MHz
Figure 20
Start-up
VO = 1.8 V, f = 2.8 MHz, CSS = 10 nF
Figure 21
Shutdown
VO = 1.8 V, f = 2.8 MHz
Figure 22
Hiccup short circuit protection
VO = 1.8 V, f = 1.4 MHz
Figure 23
Hiccup Short circuit protection
VO = 1.8 V, f = 1.4 MHz, recovery after short circuit
Figure 24
Load transient response
VO = 1.8 V, f = 1.4 MHz, 300 mA to 2.5 A
Figure 25
Load transient response
VO = 1.8 V, f = 1.4 MHz, 300 mA to 2.5 A
Figure 26
Load transient response
VO = 1.8 V, f = 1.4 MHz, 20 mA to 1 A
Figure 27
100
100
95
95
90
90
85
85
Efficiency (%)
Efficiency (%)
Efficiency
80
75
70
65
60
55
50
100m
80
75
70
65
VOUT = 3.3 V
L = 1 µH
f = 1.4 MHz
1
VIN = 3.7 V
VIN = 4.2 V
VIN = 5 V
10
100
I load (mA)
1k
Figure 2. Efficiency vs Load Current
Copyright © 2012, Texas Instruments Incorporated
60
55
10k
G002
50
100m
VOUT = 3.3 V
L = 1 µH
f = 2.8 MHz
1
VIN = 3.7 V
VIN = 4.2 V
VIN = 5 V
10
100
I load (mA)
1k
10k
G001
Figure 3. Efficiency vs Load Current
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100
100
95
95
90
90
85
85
Efficiency (%)
Efficiency (%)
SLVSAW2A – MARCH 2012 – REVISED MARCH 2012
80
75
70
65
55
50
100m
1
10
100
I load (mA)
1k
75
70
65
VIN = 2.7 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5 V
VOUT = 1.8 V
L = 1 µH
f = 1.4 MHz
60
80
55
50
100m
10k
95
90
90
85
85
Efficiency (%)
Efficiency (%)
100
95
80
75
70
55
50
100m
1
10
100
I load (mA)
1k
VOUT = 1.05 V
L = 0.4 µH
f = 2.8 MHz
55
50
100m
10k
10
100
I load (mA)
VIN = 2.7 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5 V
1k
10k
G006
Figure 7. Efficiency vs Load Current
1.83
VOUT = 1.8 V
L = 1 µH
f = 1.4 MHz
VIN = 5.0 V
VIN = 4.2 V
VIN = 3.7 V
1.825
Output Voltage (V)
Output Voltage (V)
1
G005
1.815
1.81
1.805
1.8
1.795
1.82
VOUT = 1.8 V
L = 0.4 µH
f = 2.8 MHz
VIN = 5.0 V
VIN = 4.2 V
VIN = 3.7 V
1.815
1.81
1.805
1.8
1.795
1.79
100m
1
10
100
I load (mA)
1k
Figure 8. Output Voltage vs Load Current
8
G004
70
60
1.83
1.82
10k
75
Figure 6. Efficiency vs Load Current
1.825
1k
80
65
VIN = 2.7 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5 V
VOUT = 1.05 V
L = 1.0 µH
f = 1.4 MHz
10
100
I load (mA)
Figure 5. Efficiency vs Load Current
100
60
1
G003
Figure 4. Efficiency vs Load Current
65
VIN = 2.7 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5 V
VOUT = 1.8 V
L = 0.4 µH
f = 2.8 MHz
60
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10k
G007
1.79
100m
1
10
100
I load (mA)
1k
10k
G008
Figure 9. Output Voltage vs Load Current
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70
1600
60
1400
1200
50
Frequency (kHz)
Resistance (Ω)
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40
30
20
2
2.5
3
3.5
4
4.5
5
Input Voltage (V)
5.5
6
600
400
0
6.5
1.75
3000
Frequency (kHz)
Frequency (MHz)
1.5
1.25
1
0.75
VOUT = 1.8 V
L = 1 µH
f = 1.4 MHz
IOUT = 1 A
2
2.5
3
3.5
4
4.5
Voltage (V)
5
400m 800m
1.2
1.6
2
Load Current (A)
5.5
6
2.4
2.8
3.2
G009
Figure 11. Switching Frequency vs Load Current
3500
0
0
G024
2
0.25
VIN = 3.6 V
VIN = 4.2 V
VIN = 2.8 V
200
Figure 10. High Side FET On-Resistance vs Input Voltage
0.5
VOUT = 1.8 V
L = 1 µH
f = 1.4 MHz
800
TA = 85°C
TA = 25°C
TA = −40°C
10
0
1000
2500
2000
1500
1000
0
6.5
VIN = 3.6 V
VIN = 4.2 V
VIN = 2.8 V
VOUT = 1.8 V
L = 0.4 µH
f = 2.8 MHz
500
0
400m 800m
1.2
1.6
2
Load Current (A)
G010
Figure 12. Switching Frequency vs Input Voltage
2.4
2.8
3.2
G026
Figure 13. Frequency vs Load Current
3500
25
3000
Current (µA)
Frequency (kHz)
20
2500
2000
1500
1000
VOUT = 1.8 V
L = 0.4 µH
f = 2.8 MHz
IOUT = 1 A
500
0
2
2.5
3
3.5
4
4.5
5
Input Voltage (V)
5.5
Figure 14. Frequency vs Input Voltage
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6
15
10
VOUT = 1.8 V
L = 1 µH
f = 1.4 MHz
5
6.5
0
2
2.5
3
3.5
G026
TA = 85 °C
TA = 25 °C
TA = −40 °C
4
4.5
Voltage (V)
5
5.5
6
6.5
G011
Figure 15. Quiescent Current vs Input Voltage
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Vsw
2 V/div
Vsw
2 V/div
Vo
20 mV/div
Vo
20 mV/div
Vin = 3.7 V
Vo=1.8 V/3 A
f = 1.4 MHz, L = 1 µH
Iinductor
1 A/div
400 ns/div
Iinductor
500 mA/div
1 µs/div
G012
Figure 16. PWM Operation
G013
Figure 17. PFM Operation
Vo
20 mV/div
Vsw
2 V/div
Io
1 A/div
Vo
20 mV/div
Iinductor
500 mA/div
Vin = 3.7 V
Vo = 1.8 V/100 mA
f = 1.4 MHz, L = 1 µH
Vin = 3.7 V
Vo = 1.8 V/100 mA
f = 2.8 MHz, L = 0.47 µH
Iinductor
500 mA/div
1 µs/div
Vin = 3.7 V
Vo = 1.8 V
f = 1.4 MHz, L = 1 µH
200 µs/div
G014
Figure 18. PFM Operation
G015
Figure 19. Load Sweep
Vo
20 mV/div
VEN
2 V/div
Vo
1 V/div
Io
2 A/div
Iinductor
500 mA/div
Vin = 3.7 V
Vo = 1.8 V
f = 2.8 MHz, L = 1 µH
Iinductor
50 mA/div
200 µs/div
400 µs/div
G016
Figure 20. Load Sweep
Io
2 A/div
Iinductor
200 mA/div
Iinductor
1 A/div
2 ms/div
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G018
Vin = 3.7 V
Vo = 1.8 V
f = 1.4 MHz, L = 1 µH
Vo
1 V/div
VEN
2 V/div
Vo
1 V/div
Figure 22. Shutdown
G017
Figure 21. Start-Up
Vin = 3.7 V
Vo = 1.8 V/no load
f = 2.8 MHz, L = 1 µH
10
Vin = 3.7 V
Vo = 1.8 V/600 mA
f = 2.8 MHz, L = 1 µH
Css = 10 nF
40 µs/div
G019
Figure 23. Hiccup Short Circuit Protection
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Vo
1 V/div
Vo
50 mV/div
Io
2 A/div
Io
1 A/div
Vin = 3.7 V
Vo = 1.8 V
f = 1.4 MHz, L = 1 µH
Iinductor
1 A/div
Vin = 3.7 V
Vo = 1.8 V,0.3 A to 2.5 A
f = 1.4 MHz, L = 1 µH
Co = 22 µF
Iinductor
1 A/div
400 µs/div
4 µs/div
G020
Figure 24. Hiccup Short Circuit Protection
G021
Figure 25. Load Transient Response
Vo
50 mV/div
Vo
50 mV/div
Io
1 V/div
Vin = 3.7 V
Vo = 1.8 V, 0.3 A to 2.5 A
f = 1.4 MHz, L = 1 µH
Co = 22 µF
Iinductor
1 A/div
Iinductor
500 A/div
40 µs/div
Vin = 3.7 V
Vo = 1.8 V, 20 mA to 1 A
f = 1.4 MHz, L = 1 µH
Co = 22 µF
100 µs/div
G022
Figure 26. Load Transient Response
G023
Figure 27. Load Transient Response
DETAILED DESCRIPTION
Operation
The TPS6209x synchronous switched mode converters are based on DCS™ Control (Direct Control with
Seamless transition into Power Save Mode). This is an advanced regulation topology that combines the
advantages of hysteretic and voltage mode control.
The DCS™ Control topology operates in PWM (Pulse Width Modulation) mode for medium to heavy load
conditions and in Power Save Mode at light load currents. In PWM, the converter operates with its nominal
switching frequency of 2.8 MHz/1.4 MHz having a controlled frequency variation over the input voltage range. As
the load current decreases, the converter enters Power Save Mode, reducing the switching frequency and
minimizing the IC quiescent current to achieve high efficiency over the entire load current range. DCS™ Control
supports both operation modes (PWM and PFM) using a single building block having a seamless transition from
PWM to Power Save Mode without effects on the output voltage. Fixed output voltage versions provide smallest
solution size combined with lowest quiescent current. The TPS6209x family offers excellent DC voltage
regulation and load transient regulation, combined with low output voltage ripple, minimizing interference with RF
circuits.
PWM Operation
At medium to heavy load currents, the device operates with pulse width modulation (PWM) at a nominal
switching frequency of 2.8 MHz or 1.4 MHz depending on the setting of the FREQ pin. As the load current
decreases, the converter enters the Power Save Mode operation reducing its switching frequency. The device
enters Power Save Mode at the boundary to discontinuous conduction mode (DCM).
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Power Save Mode Operation
As the load current decreases, the converter enters Power Save Mode operation. During Power Save Mode the
converter operates with reduced switching frequency in PFM mode and with a minimum quiescent current while
maintaining high efficiency. The Power Save Mode is based on a fixed on-time architecture following Equation 1.
When operating at 1.4 MHz the on-time is twice as long as the on-time for 2.8 MHz operation. This results in
larger output voltage ripple, as shown in Figure 17 and Figure 18, and slightly higher output voltage at no load,
as shown in Figure 8 and Figure 9. To have the same output voltage ripple at 1.4 MHz during PFM mode, either
the output capacitor or the inductor value needs to be increased. As an example, operating at 2.8 MHz using
0.47 µH inductor gives the same output voltage ripple as operating with 1.4 MHz using 1 µH inductor.
V
OUT × 360ns
V
IN
V
ton1.4MHz = OUT × 360ns × 2
V
IN
2×I
OUT
f =
æ
ö V -V
V
V
2
IN
OUT
OUT
÷ x IN
ton ç 1 +
ç
÷
V
L
OUT
è
ø
ton2.8MHz =
(1)
In Power Save Mode the output voltage rises slightly above the nominal output voltage in PWM mode, as shown
in Figure 8 and Figure 9. This effect can be reduced by increasing the output capacitance or the inductor value.
This effect can also be reduced by programming the output voltage of the TPS62090 lower than the target value.
As an example, if the target output voltage is 3.3 V, then the TPS62090 can be programmed to 3.3V - 0.8%. As
a result the output voltage accuracy is now -2.2% to +2.2% instead of -1.4% to 3%. The output voltage accuracy
in PFM operation is reflected in the electrical specification table and given for a 22 µF output capacitance.
Low Dropout Operation (100% Duty Cycle)
The device offers low input to output voltage difference by entering 100% duty cycle mode. In this mode the high
side MOSFET switch is constantly turned on. This is particularly useful in battery powered applications to achieve
longest operation time by taking full advantage of the whole battery voltage range. The minimum input voltage
where the output voltage falls below its nominal regulation value is given by:
VIN(min) = VOUT(max) + IOUT x ( RDS(on) + RL )
(2)
Where
RDS(on) = High side FET on-resistance
RL = DC resistance of the inductor
VOUT(max) = nominal output voltage plus maximum output voltage tolerance
Softstart (SS)
To minimize inrush current during start up, the device has an adjustable softstart depending on the capacitor
value connected to the SS pin. The device charges the softstart capacitor with a constant current of typically 7.5
µA. The feedback voltage follows this voltage with a fraction of 1.56 until the internal reference voltage of 0.8 V is
reached. The softstart operation is completed once the voltage at the softstart capacitor has reached typically
1.25 V. The soft-start time can be calculated using Equation 3. The larger the softstart capacitor the longer the
softstart time. The relation between softstart voltage and feedback voltage can be estimated using Equation 4.
1.25V
tSS = CSS x
7.5μA
(3)
VFB =
VSS
1.56
(4)
This is also the case for the fixed output voltage option having the internal regulation voltage. Leaving the
softstart pin floating sets the minimum start-up time.
12
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Start-up Tracking (SS)
The softstart pin can also be used to implement output voltage tracking with other supply rails. The internal
reference voltage follows the voltage at the softstart pin with a fraction of 1.56 until the internal reference voltage
of 0.8 V is reached. The softstart pin can be used to implement output voltage tracking as shown in Figure 28.
TPS62090
Vin
2.5V to 6V
12
11
C1
10mF
10
C3
10nF
V1
Output of external
DC DC converter
R3
59k
PVIN
SW
PVIN
SW
AVIN
VOS
8
9 SS
2
V2
1.5V/3A
R1
140k
C2
22mF
16
R2
160k
R3
500k
PG 4
CP
CN
L1
470nH
FB 5
13 EN
7
1
FREQ
Power Good
3
AGND 6
PGND PGND
R4
43k
14
15
Figure 28. Output Voltage Tracking
In Figure 28, the output V2 will track the voltage applied to V1. The voltage will track simultaneously when
following conditions are met:
R3
R1
=
x 1.56
R4
R2
(5)
As the fraction of R3/R4 becomes larger the voltage V1 will ramp up faster than V2 and if it gets smaller than the
ramp will be slower than V2. R4 needs to be determined first using Equation 6.
1.25V
R4 =
300μA
(6)
In the calculation of R4, 300 µA current is used to achieve sufficient accuracy by taking into account the typical
7.5 µA soft-start current. After determining R4, R3 can be calculated using Equation 5.
Short Circuit Protection (Hiccup-Mode)
The device is protected against hard short circuits to GND and over-current events. This is implemented by a two
level short circuit protection. During start-up and when the output is shorted to GND the switch current limit is
reduced to 1/3 of its typical current limit of 4.6 A. Once the output voltage exceeds typically 0.6 V the current limit
is released to its nominal value. The full current limit is implemented as a hiccup current limit. Once the internal
current limits is triggered 32 times the device stops switching and starts a new start-up sequence after a typical
delay time of 66 µS passed by. The device will go through these cycles until the high current condition is
released.
Output Discharge Function
To make sure the device starts up under defined conditions, the output gets discharged via the VOS pin with a
typical discharge resistor of 200 Ω whenever the device shuts down. This happens when the device is disabled
or if thermal shutdown, undervoltage lockout or short circuit hiccup-mode is triggered.
Power Good Output (PG)
The power good output is low when the output voltage is below its nominal value. The power good will become
high impedance once the output is within 5% of regulation. The PG pin is an open drain output and is specified to
typically sink up to 1 mA. This output requires a pull-up resistor to be monitored properly. The pull-up resistor
cannot be connected to any voltage higher than the input voltage of the device.
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Frequency Set Pin (FREQ)
The FREQ pin is a digital logic input which sets the nominal switching frequency. Pulling this pin to GND sets the
nominal switching frequency to 2.8 MHz and pulling this pin high sets the nominal switching frequency to 1.4
MHz. Since this pin changes the switching frequency it also changes the on-time during PFM mode. At 1.4 MHz
the on-time is twice the on-time as operating at 2.8 MHz. This pin has an active pull-down resistor of typically
400 kΩ. For applications where efficiency is of highest importance, a lower switching frequency should be
selected. A higher switching frequency allows the use of smaller external components, faster load transient
response and lower output voltage ripple when using same L-C values.
Undervoltage Lockout (UVLO)
To avoid mis-operation of the device at low input voltages, an undervoltage lockout is included. UVLO shuts
down the device at input voltages lower than typically 2.2 V with a 200 mV hysteresis.
Thermal Shutdown
The device goes into thermal shutdown once the junction temperature exceeds typically 150°C with a 20°C
hysteresis.
APPLICATION INFORMATION
DESIGN PROCEDURE
The first step is the selection of the output filter components. To simplify this process, Table 2 and Table 3
outline possible inductor and capacitor value combinations.
Table 2. Output Filter Selection (2.8 MHz Operation, FREQ = GND)
INDUCTOR VALUE [µH] (1)
OUTPUT CAPACITOR VALUE [µF] (2)
10
22
47
100
150
(3)
√
√
√
√
√
√
√
√
0.47
√
1.0
2.2
3.3
(1)
(2)
(3)
Inductor tolerance and current de-rating is anticipated. The effective inductance can vary by +20% and
-30%.
Capacitance tolerance and bias voltage de-rating is anticipated. The effective capacitance can vary by
+20% and -50%.
Typical application configuration. Other check mark indicates alternative filter combinations
Table 3. Output Filter Selection (1.4 MHz Operation, FREQ = VIN)
INDUCTOR VALUE [µH] (1)
OUTPUT CAPACITOR VALUE [µF] (2)
10
22
47
100
150
√
√
√
√
1.0
√
√ (3)
√
√
√
2.2
√
√
√
√
√
0.47
3.3
(1)
(2)
(3)
14
Inductor tolerance and current de-rating is anticipated. The effective inductance can vary by +20% and
–30%.
Capacitance tolerance and bias voltage de-rating is anticipated. The effective capacitance can vary by
+20% and –50%.
Typical application configuration. Other check mark indicates alternative filter combinations
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Inductor Selection
The inductor selection is affected by several parameter like inductor ripple current, output voltage ripple,
transition point into Power Save Mode, and efficiency. See Table 4 for typical inductors.
Table 4. Inductor Selection
INDUCTOR VALUE
COMPONENT SUPPLIER
SIZE (LxWxH mm)
Isat/DCR
0.6 µH
Coilcraft XAL4012-601
4 x 4 x 2.1
7.1A/9.5 mΩ
1 µH
Coilcraft XAL4020-102
4 x 4 x 2.1
5.9A/13.2 mΩ
1 µH
Coilcraft XFL4020-102
4 x 4 x 2.1
5.1 A/10.8 mΩ
0.47 µH
TOKO DFE252012 R47
2.5 x 2 x 1.2
3.7A/39 mΩ
1 µH
TOKO DFE252012 1R0
2.5 x 2 x 1.2
3.0A/59 mΩ
0.68 µH
TOKO DFE322512 R68
3.2 x 2.5 x 1.2
3.5A/37 mΩ
1 µH
TOKO DFE322512 1R0
3.2 x 2.5 x 1.2
3.1A/45 mΩ
In addition, the inductor has to be rated for the appropriate saturation current and DC resistance (DCR). The
inductor needs to be rated for a saturation current as high as the typical switch current limit, of 4.6 A or according
to Equation 7 and Equation 8. Equation 7 and Equation 8 calculate the maximum inductor current under static
load conditions. The formula takes the converter efficiency into account. The converter efficiency can be taken
from the data sheet graph`s or 80% can be used as a conservative approach. The calculation must be done for
the maximum input voltage where the peak switch current is highest.
I =I
+
L
OUT
ΔI
L
2
(7)
æ
ö
V
V
OUT x ç 1 - OUT ÷
ç
η
V x η÷
IN
è
ø
I =I
+
L
OUT
2x f xL
(8)
where
ƒ = Converter switching frequency (typical 2.8 MHz or 1.4 MHz)
L = Selected inductor value
η = Estimated converter efficiency (use the number from the efficiency curves or 0.80 as an conservative
assumption)
Note: The calculation must be done for the maximum input voltage of the application
Calculating the maximum inductor current using the actual operating conditions gives the minimum saturation
current. A margin of 20% needs to be added to cover for load transients during operation.
Input and Output Capacitor Selection
For best output and input voltage filtering, low ESR ceramic capacitors are recommended. The input capacitor
minimizes input voltage ripple, suppresses input voltage spikes and provides a stable system rail for the device.
A 22 µF or larger input capacitor is recommended for 1.4 MHz operation frequency. For 2.8 MHz operation
frequence a 10 µF input capacitor or larger is recommended. The output capacitor value can range from 10 µF
up to 150 µF and beyond. The recommended typical output capacitor value is 22 µF and can vary over a wide
range as outline in the output filter selection table.
Table 5. Input Capacitor Selection
INPUT CAPACITOR
COMMENT
10 µF
FREQ=low, f=2.8 MHz
22 µF
FREQ=high, f=1.4 MHz
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Setting the Output Voltage
The output voltage is set by an external resistor divider according to the following equations:
R1 ö
R1 ö
æ
æ
VOUT = VFB ´ ç 1 +
= 0.8 V ´ ç 1 +
÷
R2 ø
R2 ÷ø
è
è
(9)
V
0.8 V
R2 = FB =
» 160 kΩ
IFB
5 μA
(10)
æV
ö
æV
ö
R1 = R2 ´ ç OUT - 1÷ = R2 ´ ç OUT - 1÷
è 0.8V
ø
è VFB
ø
(11)
When sizing R2, in order to achieve low quiescent current and acceptable noise sensitivity, use a minimum of 5
µA for the feedback current IFB. Larger currents through R2 improve noise sensitivity and output voltage
accuracy. Lowest quiescent current and best output voltage accuracy can be achieved with the fixed output
voltage versions. For the fixed output voltage versions, the FB pin can be left floating or connected to GND to
improve the thermal package performance.
Layout Guideline
It is recommended to place all components as close as possible to the IC. The VOS connection is noise sensitive
and needs to be routed as short and directly to the output terminal of the inductor. The exposed thermal pad of
the package, analog ground (pin 6) and power ground (pin 14, 15) should have a single joint connection at the
exposed thermal pad of the package. This minimizes switch node jitter. The charge pump capacitor connected to
CP and CN should be placed close to the IC to minimize coupling of switching waveforms into other traces and
circuits. Refer to the evaluation module User Guide (SLVU670) for an example of component placement, routing
and thermal design.
TYPICAL APPLICATIONS
L1
470nH
TPS62090
Vin
2.5V to 6V
12
11
C1
10mF
10
C3
10nF
SW
PVIN
SW
AVIN
VOS
13 EN
7
8
C4
10nF
PVIN
9 SS
2
R1
75k
C2
22mF
16
FB 5
R2
150k
R3
500k
PG 4
CP
CN
Vout
1.2V/3A
1
FREQ
3
Power Good
AGND 6
PGND PGND
14
15
Figure 29. 1.2 V Adjustable Version Operating at 2.8 MHz
16
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L1
470nH
TPS62090
Vin
2.5V to 6V
12
11
C1
10mF
10
C3
10nF
SW
PVIN
SW
AVIN
VOS
13 EN
7
C4
10nF
R1
140k
2
C2
22mF
16
R2
160k
FB 5
R3
500k
PG 4
CP
8
Vout
1.5V/3A
1
PVIN
9 SS
Power Good
3
FREQ
CN
AGND 6
PGND PGND
14
15
Figure 30. 1.5 V Adjustable Version Operating at 2.8 MHz
L1
1mH
TPS62090
Vin
2.5V to 6V
12
11
C1
22mF
10
C3
10nF
SW
PVIN
SW
AVIN
VOS
7
9
Vout
1.8V/3A
R1
200k
2
C2
22mF
16
R2
160k
FB 5
13 EN
8
C4
10nF
PVIN
1
R3
500k
PG 4
CP
CN
FREQ
SS
AGND
3
Power Good
Vin
6
PGND PGND
14
15
Figure 31. 1.8 V Adjustable Version Operating at 1.4 MHz
TPS62090
Vin
2.5V to 6V
12
11
C1
22mF
10
C3
10nF
SW
PVIN
SW
AVIN
VOS
7
9
1
Vout
1.05V/3A
R1
68k
2
C2
22mF
16
R2
220k
FB 5
13 EN
8
C4
10nF
PVIN
L1
1mH
R3
500k
PG 4
CP
CN
FREQ
SS
AGND
3
Power Good
Vin
6
PGND PGND
14
15
Figure 32. 1.05 V Adjustable Version Operating at 1.4 MHz
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REVISION HISTORY
Changes from Original (March 2012) to Revision A
Page
•
Changed the FUNCTIONAL BLOCK DIAGRAM .................................................................................................................. 5
•
Changed R1, R2 and R4 values in Figure 28 ..................................................................................................................... 13
•
Changed R1 and R2 values in Figure 29 ........................................................................................................................... 16
18
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PACKAGE OPTION ADDENDUM
www.ti.com
2-Apr-2012
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
TPS62090RGTR
ACTIVE
QFN
RGT
16
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
TPS62090RGTT
ACTIVE
QFN
RGT
16
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
TPS62091RGTR
ACTIVE
QFN
RGT
16
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
TPS62091RGTT
ACTIVE
QFN
RGT
16
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
TPS62092RGTR
ACTIVE
QFN
RGT
16
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
TPS62092RGTT
ACTIVE
QFN
RGT
16
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
TPS62093RGTR
ACTIVE
QFN
RGT
16
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
TPS62093RGTT
ACTIVE
QFN
RGT
16
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
Samples
(Requires Login)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
2-Apr-2012
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
TPS62090RGTR
QFN
RGT
16
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
3000
330.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
TPS62090RGTT
QFN
RGT
16
250
180.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
TPS62091RGTR
QFN
RGT
16
3000
330.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
TPS62091RGTT
QFN
RGT
16
250
180.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
TPS62092RGTR
QFN
RGT
16
3000
330.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
TPS62092RGTT
QFN
RGT
16
250
180.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
TPS62093RGTR
QFN
RGT
16
3000
330.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
TPS62093RGTT
QFN
RGT
16
250
180.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS62090RGTR
QFN
RGT
16
3000
367.0
367.0
35.0
TPS62090RGTT
QFN
RGT
16
250
210.0
185.0
35.0
TPS62091RGTR
QFN
RGT
16
3000
367.0
367.0
35.0
TPS62091RGTT
QFN
RGT
16
250
210.0
185.0
35.0
TPS62092RGTR
QFN
RGT
16
3000
367.0
367.0
35.0
TPS62092RGTT
QFN
RGT
16
250
210.0
185.0
35.0
TPS62093RGTR
QFN
RGT
16
3000
367.0
367.0
35.0
TPS62093RGTT
QFN
RGT
16
250
210.0
185.0
35.0
Pack Materials-Page 2
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