TQM7M4022 ( Preliminary data sheet) 3V Quad-Band GSM850/900/DCS/PCS Power Amplifier Module 7mm x 7mm LGA Package Outline: Description: Dimensions in mm Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT technology. The module is fully integrated, providing a simple 50 Ohms interface on all input and output ports. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands. Band select and power control inputs on the module are CMOS compatible. Top view Features: Bottom view • Very compact size – 7x7x1.3mm³ • High efficiency – typical GSM850 53%, GSM900 58%, DCS 50%, PCS 50%. • Positive supply voltage – 3.0 to 4.5 V. • No reference voltage needed • 50 Ω input and output impedances. • GPRS class 12 compatible. • CMOS band select and power control inputs. Side view • High-reliability InGaP technology. • Ruggedness 10:1. ! Caution! ESD sensitive device. Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 2 1. Absolute maximum ratings Item Specifications # Parameter Symbol Min -0.5 Typ Max Unit 6.0 V 2.4 A 1 DC Supply Voltage VBATT 2 DC Supply Current IBATT 3 Power Control Voltage VRAMP -0.5 3.0 V 4 Transmit_Enable TX_EN -0.5 3.0 V 5 Band Select BS -0.5 3.0 V 6 Input RF Power PIN 13 dBm 7 DC Voltage on RFin ports 4.0 V 7 Operating Duty Cycle δ 50 % 8 Operating Temperature TA -30 85 °C 9 Storage Temperature TS -55 155 °C remarks No operation Frame Length = 4.6ms Note: The amplifier will survive over the full range specified for any individual input, while other parameters are nominal and with no RF input. 2. Operating Parameters Item Specifications # Parameter 1 Supply Voltage 2 Supply current 3 Analog Power Control Symbol Min Typ Max Unit VBATT 3.0 3.5 4.5 V Normal operation 10 µA TX_EN = low 1.7 V VRAMP_MAX = 1.7V IBATT off Voltage VRAMP Current IRAMP 0.2 Input capacitance 15 Rise time 10 A 20 pF 2 µs remarks VRAMP from 0.2V to VRAMP_MAX, POUT from POUT_MIN to POUT_MAX 4 Transmit Enable TX_EN TX_EN on 1.8 3.0 V Logic High: PA on TX_EN off 0 0.5 V Logic Low: PA off 10 µA Current 5 Band Select BS High 1.8 3.0 V Logic High: DCS/PCS Low 0 0.5 V Logic Low: GSM850/900 10 µA Current Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 3 3. GSM850 Electrical Characteristics Conditions unless otherwise stated: TA=25°C, ZS=ZL=50Ω; VBATT=3.5V; BS=low; TX_EN=high; PIN=5dBm, Duty Cycle = 25%, Pulse Width = 1154µs, VRAMP= VRAMP_MAX Item Specifications # Parameter 1 Frequency range 2 Input power 3 Input impedance Symbol Min fMIN...fMA 824 PIN 2 Load impedance 5 Load mismatch stability All angles 5 Max Unit 849 MHz 8 dBm Ω 50 Input VSWR 4 Typ 1.5:1 remarks TX_EN = low or high 0.2V ≤ VRAMP ≤ VRAMP 2.5:1 MAX Ω 50 Set VRAMP where POUT ≤ 34.2dBm into VSWR 50 Ohm load 8:1 All spurious < -36 dBm, RBW=3MHz 6 Set VRAMP where POUT ≤ 34.2dBm into Load mismatch ruggedness All angles VSWR 50 Ohm load 10:1 No damage or permanent degradation 7 Forward isolation 8 Crossover isolation -40 -25 -20 dBm POUT ≤ POUT 2nd harmonic -20 -10 dBm 3rd harmonic -20 -15 dBm POUT ≤ 34.2dBm -5 dBm Maximum output power POUT @ low band port MAX 824 MHz ≤ f ≤ 849 MHz 34.2 35 dBm Nominal conditions 32.5 Minimum output power 12 Power added efficiency PAE 45 53 13 Power supply current IBAT 1.3 1.8 14 Output noise power, BW=100kHz 869 MHz... 894 MHz Slope POUT/VRAMP POUT dBm VBATT = 3.0V, TA = 85°C 11 15 MAX Harmonics 4th ... 8th harmonic 10 dBm TX_EN = low, PIN = 8dBm Measured @ high band port 2nd harmonic 9 -30 0 MIN 2.3 dBm TX_EN=High, VRAMP=0.2V, PIN=8dBm % POUT = POUT A DC current at POUT = POUT POUT = POUT -85 MAX MAX -82 dBm f0 = 849 MHz 250 dB/V POUT>0dBm Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice MAX 4 4. GSM900 Electrical Characteristics Conditions unless otherwise stated: TA=25°C, ZS=ZL=50Ω; VBATT=3.5V; BS=low; TX_EN=high; PIN=5dBm, Duty Cycle = 25%, Pulse Width = 1154µs, VRAMP= VRAMP_MAX Item Specifications # Parameter 1 Frequency range 2 Input power 3 Input impedance Symbol Min fMIN...fMA 880 PIN 2 Load impedance 5 Load mismatch stability All angles 5 Max Unit 915 MHz 8 dBm Ω 50 Input VSWR 4 Typ 1.5:1 remarks TX_EN = low or high 0.2V ≤ VRAMP ≤ VRAMP 2.5:1 MAX Ω 50 Set VRAMP where POUT ≤ 34.2dBm into VSWR 50 Ohm load 8:1 All spurious < -36 dBm, RBW=3MHz 6 Set VRAMP where POUT ≤ 34.2dBm into Load mismatch ruggedness All angles VSWR 50 Ohm load 10:1 No damage or permanent degradation 7 Forward isolation 8 Crossover isolation -40 -25 -20 dBm POUT ≤ POUT 2nd harmonic -20 -10 dBm 3rd harmonic -20 -15 dBm POUT ≤ 34.2dBm -5 dBm Maximum output power POUT @ low band port MAX 880 MHz ≤ f ≤ 915 MHz 34.2 35 dBm Nominal conditions 32.5 POUT dBm VBATT = 3.0V, TA = 85°C 11 Minimum output power 12 Power added efficiency PAE 50 58 13 Power supply current IBAT 1.2 1.7 14 Output noise power, BW=100kHz 15 MAX Harmonics 4th ... 8th harmonic 10 dBm TX_EN = low, PIN = 8dBm Measured @ high band port 2nd harmonic 9 -30 0 MIN 2.3 dBm TX_EN=High, VRAMP=0.2V, PIN=8dBm % POUT = POUT A DC current at POUT = POUT POUT = POUT MAX MAX 925 MHz ... 935 MHz -80 -72 dBm f0 = 915 MHz 935 MHz ... 960 MHz -85 -82 dBm f0 = 915 MHz 250 dB/V POUT>0dBm Slope POUT/VRAMP Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice MAX 5 5. DCS Electrical Characteristics Conditions unless otherwise stated: TA=25°C, ZS=ZL=50Ω; VBATT=3.5V; BS=high; TX_EN=high; PIN=5dBm, Duty Cycle = 25%, Pulse Width = 1154µs, VRAMP= VRAMP_MAX Item Specifications # Parameter 1 Frequency range 2 Input power 3 Input impedance Symbol Min fMIN...fMA 1710 PIN 2 Load impedance 5 Load mismatch stability All angles 5 Max Unit 1785 MHz 8 dBm Ω 50 Input VSWR 4 Typ 1.5:1 remarks TX_EN = low or high 0.2V ≤ VRAMP ≤ VRAMP 2.5:1 MAX Ω 50 Set VRAMP where Pout ≤ 32 dBm VSWR into 50 Ohm load 8:1 All spurious < -36 dBm, RBW=3MHz 6 Set VRAMP where Pout ≤ 32 dBm Load mismatch ruggedness All angles VSWR into 50 Ohm load 10:1 No damage or permanent degradation 7 Forward isolation -35 -30 dBm TX_EN = low, PIN = 8dBm 8 Harmonics 2nd harmonic -20 -10 dBm 3rd harmonic -25 -15 dBm POUT ≤ 32dBm -5 dBm 4th ... 8th harmonic 9 Maximum output power POUT MAX 32 33 dBm Nominal conditions 30.5 10 Minimum output power POUT dBm VBATT = 3.0V, TA = 85°C -5 MIN dBm TX_EN=High, VRAMP=0.2V, PIN = 8dBm 11 Power added efficiency PAE 43 50 12 Power supply current IBAT 0.8 1.3 13 Output noise power, BW=100kHz 1805 MHz ... 1880 MHz 14 Slope POUT/VRAMP 1.5 % POUT = POUT A DC current at POUT = POUT POUT = POUT -83 MAX MAX -77 dBm f0 = 1785MHz 290 dB/V POUT>-5dBm Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice MAX 6 6. PCS Electrical Characteristics Conditions unless otherwise stated: TA=25°C, ZS=ZL=50Ω; VBATT=3.5V; BS=high; TX_EN=high; PIN=5dBm, Duty Cycle = 25%, Pulse Width = 1154µs, VRAMP= VRAMP_MAX Item Specifications # Parameter 1 Frequency range 2 Input power 3 Input impedance Symbol Min fMIN...fMA 1850 Pin 2 Load impedance 5 Load mismatch stability All angles 5 Max Unit 1910 MHz 8 dBm Ω 50 Input VSWR 4 Typ 1.5:1 remarks TX_EN = low or high 0.2V ≤ VRAMP ≤ VRAMP 2.5:1 MAX Ω 50 Set VRAMP where Pout ≤ 32 dBm VSWR into 50 Ohm load 8:1 All spurious < -36 dBm, RBW=3MHz 6 Set VRAMP where Pout ≤ 32 dBm Load mismatch ruggedness All angles VSWR into 50 Ohm load 10:1 No damage or permanent degradation 7 Forward isolation -35 -30 dBm TX_EN = low, PIN = 8dBm 8 Harmonics 2nd harmonic -20 -10 dBm 3rd harmonic -25 -15 dBm POUT ≤ 32dBm -5 dBm 4th ... 8th harmonic 9 Maximum output power POUT MAX 32 33 dBm Nominal conditions 30 10 Minimum output power POUT dBm VBATT = 3.0V, TA = 85°C -5 MIN dBm TX_EN=High, VRAMP=0.2V, PIN = 8dBm 11 Power added efficiency PAE 43 50 12 Power supply current IBAT 0.75 1.2 13 Output noise power, BW=100kHz 1930 MHz ... 1990 MHz 14 Slope POUT/VRAMP 1.5 % POUT = POUT A DC current at POUT = POUT POUT = POUT -83 MAX MAX -77 dBm f0 = 1910MHz 290 dB/V POUT>-5dBm Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice MAX 7 7. Block Diagram GSM850 / 900 in GSM850 / 900 out VRAMP Logic VBATT VCC TX_EN Power Control BS DCS / PCS in DCS / PCS out 8. Pin Out Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 8 9. Pinning TQM7M4022 Footprint Top View 1 14 2 16 3 13 4 15 5 12 6 11 7 17 8 10 9 Pin # Description Function 1 GSM850 / 900 in GSM850 / GSM900 RF input 2 GND Ground 3 GND Ground 4 VRAMP DAC Control Signal for output power setting, nominal 0.2 .. 1.7 V 5 VBATT Battery supply voltage, typ. 3.0 – 4.5 V, nom. 1.6A 6 TX_EN Digital Transmit Enable Signal. When activated (TX_EN = high), all bands of the PA will be enabled for operation. 7 BS Band Select Pin (Low -> GSM850/GSM900 mode active; High -> DCS/PCS mode active) 8 GND Ground 9 DCS / PCS in DCS/PCS RF input 10 DCS / PCS out DCS / PCS RF output 11 GND Ground 12 VCC Internal Voltage 13 GND Ground 14 GSM850 / 900 out GSM850 / GSM900 RF output GND Ground 15, 16, 17 Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 9 10. Package Outline (all dimensions in mm): Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 10 Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 11 11 Tape and Reel Information Module Orientation MODULE 7X7 User Direction of Feed Carrier and Cover Tape Physical Dimensions PART FEATURE SYMBOL SIZE (in) SIZE (mm) CAVITY BOTTOM HOLE DIAMETER D1 0.059 1.50 PERFORATION DIAMETER D0 0.059 1.50 PITCH P0 0.157 4.00 POSITION E1 0.069 1.75 CARRIER TAPE THICKNESS T 0.012 0.30 COVER TAPE THICKNESS T1 0.002 0.056 CAVITY LENGTH A0 0.291 7.4 WIDTH B0 0.291 7.4 DEPTH K0 0.079 2.0 PITCH P1 0.472 12.00 CAVITY TO PERFORATION LENGTH DIRECTION P2 0.079 2.00 CAVITY TO PERFORATION WIDTH DIRECTION F 0.295 7.50 COVER TAPE WIDTH C 0.524 13.30 CARRIER TAPE WIDTH W 0.630 16.00 DISTANCE BETWEEN CENTERLINE Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 12 Reel Physical dimensions PART FEATURE SYMBOL SIZE (in) SIZE (mm) FLANGE DIAMETER A 12.992 330.0 THICKNESS W2 0.874 22.2 SPACE BETWEEN FLANGE W1 0.661 16.8 OUTER DIAMETER N 4.016 102.0 ARBOR HOLE DIAMETER C 0.512 13.0 KEY SLIT WIDTH B 0.079 2.0 KEY SLIT DIAMETER D 0.787 20.0 HUB Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 13 Completed Tape and Reel Assembly Product label, Mfg Label and ESD label are placed on the flange opposite to the sprockets in the carrier tape Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 14