TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 0.14 GHz to 1.5 GHz QUADRATURE MODULATOR FEATURES • • • • RHC PACKAGE (TOP VIEW) GND QREF IREF IVIN QVIN P1dB of 7 dBm –156 dBm/Hz Noise Floor –150 dBm/Hz Noise at POUT = 0 dBm Typical Unadjusted Carrier Suppression > 35 dBc at 1 GHz Typical Unadjusted Sideband Suppression > 40 dBc at 1 GHz Differential or Single-Ended I, Q Inputs Convenient Single-Ended LO Input Silicon Germanium Technology 1 16 15 14 13 GND GND LO • • • • • • • 12 11 4 10 5 6 7 8 APPLICATIONS • 2 3 GND GND VCC 9 GND VCC PWD RFOUT GND • • • • Cellular Base Transceiver Station Transmit Channel IF Sampling Applications TDMA: GSM, IS-136, EDGE/UWC-136 CDMA: IS-95, UMTS, CDMA2000 Wireless Local Loop Wireless LAN IEEE 802.11 LMDS, MMDS Wideband Baseband Transceivers P0003-01 DESCRIPTION The TRF3701 is an ultralow-noise direct quadrature modulator that is capable of converting complex input signals from baseband or IF directly up to RF. An internal analog combiner sums the real and imaginary components of the RF outputs. This combined output can feed the RF preamp directly at frequencies of up to 1.5 GHz. The modulator is implemented as a double-balanced mixer. An internal local oscillator (LO) phase splitter accommodates a single-ended LO input, eliminating the need for a costly external balun. AVAILABLE OPTIONS TA –40°C to 85°C 4-mm × 4-mm 16-Pin RHC (QFN) Package TRF3701IRHC TRF3701IRHCR (Tape and Reel) Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2003–2006, Texas Instruments Incorporated TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. FUNCTIONAL BLOCK DIAGRAM VCC IVIN IREF +45° LO –45° Σ RFOUT 50 Ω QVIN QREF PWD GND B0002-01 Table 1. TERMINAL FUNCTIONS TERMINAL NAME I/O DESCRIPTION GND 1, 2, 3, 5, 9, 11, 12 IREF 15 I In-phase (I) reference voltage/differential input IVIN 14 I In-phase (I) signal input LO 4 I Local oscillator input PWD 7 I Power down QREF 16 I Quadrature (Q) reference voltage/differential input QVIN 13 I Quadrature (Q) signal input RFOUT 8 O RF output VCC 2 NO. 6, 10 Ground Supply voltage Submit Documentation Feedback TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) (2) VCC TA Supply voltage range –0.5 V to 6 V LO input power level 10 dBm Baseband input voltage level (single-ended) 3 Vp-p Operating free-air temperature range –40°C to 85°C Lead temperature for 10 seconds (1) (2) 260°C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Measured with respect to ground RECOMMENDED OPERATING CONDITIONS MIN NOM MAX 5 5.5 UNIT Supplies and References VCC Analog supply voltage 4.5 VCM (IVIN, QVIN, IREF, QREF input common-mode dc voltage) 3.7 V V Local Oscillator Input (LO) Input frequency 140 Power level (measured into 50 Ω) –6 1500 MHz 6 dBm 0 Signal Inputs (IVIN, QVIN) Input bandwidth PWD Operation 700 VIL 0 VIH 3.7 MHz 1.2 5 V ELECTRICAL CHARACTERISTICS Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 942.5 MHz at 0 dBm, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Power Supply ICC Total supply current V(PWD) = 5 V 145 V(PWD) = 0 V 13 Power-down input impedance mA 11 kΩ Turnon time 120 ns Turnoff time 20 ns 40 + j4.8 Ω 16 µA Local Oscillator (LO) Input Input impedance Signal Inputs (IVIN, QVIN, IREF, QREF) Input bias current Input impedance V(IVIN) = V(IREF) = V(QVIN) = V(QREF) = VCM = 3.7 V Single-ended input 250 Differential input 125 Submit Documentation Feedback kΩ 3 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 RF OUTPUT PERFORMANCE (942.5 MHz) Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 942.5 MHz at 0 dBm, TA = 25°C (unless otherwise noted) (1) PARAMETER TEST CONDITIONS MIN TYP –3.5 –1 MAX UNIT Single and Two-Tone Specifications Output power Second baseband harmonic (USB or LSB) (3) I, Q (2) = 1 Vp-p, fBB = 928 kHz Third baseband harmonic (USB or LSB) (3) IMD3 I, Q (2) = 1 Vp-p (two-tone signal, fBB1 = 928 kHz, fBB2 = 992 kHz) P1dB (output compression point) NSD Noise spectral density –61 –55 dBc –55 –45 dBc dBm –156 –153 –151 (5) 6-MHz offset from carrier, Pout = –5 dBm, over temperature –152 –150 (5) 6-MHz offset from carrier, Pout = 0 dBm, over temperature –150 –148 (5) 26 + j3 30 I, Q (2) = 1 Vp-p, fBB = 928 kHz, optimized Q (2) I, Q (2) = 1 Vp-p, fBB = 928 kHz, optimized I, Q (2) = 1 Vp-p, fBB = 928 kHz, over temperature dBm/Hz Ω 35 55 = 1 Vp-p, fBB = 928 kHz, over temperature I, Q (2) = 1 Vp-p, fBB = 928 kHz, unadjusted 4 dBc 6-MHz offset from carrier, Pout = –10 dBm, over temperature I, (1) (2) (3) (4) (5) –45 I, Q (4) = VCM = 3.7 VDC I, Q (2) = 1 Vp-p, fBB = 928 kHz, unadjusted Sideband suppression –50 6.5 RFOUT pin impedance Carrier suppression dBm dBc 35 37 50 55 dBc 38 Baseband inputs are differential; equivalent performance is attained by using single-ended drive. I , Q = 1 Vp-p implies that the magnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to 500 mVp-p. USB = upper sideband. LSB = lower sideband. All input pins tied to VCM Maximum noise values are assured by statistical characterization only, not production testing. The values specified are over the entire temperature range, TA = –40°C to 85°C. Submit Documentation Feedback TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 RF OUTPUT PERFORMANCE (340 MHz) Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 340 MHz at 0 dBm, TA = 25°C (unless otherwise noted) (1) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Single and Two-Tone Specifications Output power Second baseband harmonic (USB or LSB) (3) I, Q (2) = 1 Vp-p, fBB = 928 kHz Third baseband harmonic (USB or LSB) (3) IMD3 I, Q (2) = 1 Vp-p (two-tone signal, fBB1 = 928 kHz, fBB2 = 992 kHz) P1dB (output compression point) Carrier suppression Sideband suppression (1) (2) (3) I, Q (2) = 1 Vp-p, fBB = 928 kHz, unadjusted 40 I, Q (2) = 1 Vp-p, fBB = 928 kHz, optimized I, dBm –52 dBc –45 dBc 67 dBc 6 dBm 51 dBc >60 I, Q (2) = 1 Vp-p, fBB = 928 kHz, unadjusted Q (2) –1 35 = 1 Vp-p, fBB = 928 kHz, optimized dBc >60 Baseband inputs are differential; equivalent performance is attained by using single-ended drive. I , Q = 1 Vp-p implies that the magnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to 500 mVp-p. USB = upper sideband. LSB = lower sideband. RF OUTPUT PERFORMANCE (140 MHz) Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 140 MHz at 0 dBm, TA = 25°C (unless otherwise noted) (1) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Single and Two-Tone Specifications Output power Second baseband harmonic (USB or LSB) (3) I, Q (2) = 1 Vp-p, fBB = 928 kHz Third baseband harmonic (USB or LSB) (3) IMD3 Q (2) I, = 1 Vp-p (two-tone signal, fBB1 = 928 kHz, fBB2 = 992 kHz) P1dB (output compression point) Carrier suppression Sideband suppression (1) (2) (3) I, Q (2) = 1 Vp-p, fBB = 928 kHz, unadjusted I, Q (2) = 1 Vp-p, fBB = 928 kHz, optimized I, Q (2) = 1 Vp-p, fBB = 928 kHz, unadjusted I, Q (2) = 1 Vp-p, fBB = 928 kHz, optimized 40 –1 dBm –61.5 dBc -46 dBc 68 dBc 3.6 dBm 50 >60 35 >60 dBc dBc Baseband inputs are differential; equivalent performance is attained by using single-ended drive. I , Q = 1 Vp-p implies that the magnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to 500 mVp-p. USB = upper sideband. LSB = lower sideband. Submit Documentation Feedback 5 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 DEFINITIONS OF SELECTED SPECIFICATIONS Unadjusted Carrier Suppression This specification measures the amount by which the local oscillator component is attenuated in the output spectrum of the modulator relative to the carrier. It is assumed that the baseband inputs delivered to the pins of the TRF3701 are perfectly matched to have the same dc offset (VCM). This includes all four baseband inputs: IVIN, QVIN, IREF and QREF. Unadjusted carrier suppression is measured in dBc. Adjusted (Optimized) Carrier Suppression This differs from the unadjusted suppression number in that the dc offsets of the baseband inputs are iteratively adjusted around their theoretical value of VCM in order to yield the maximum suppression of the LO component in the output spectrum. Adjusted carrier suppression is measured in dBc. Unadjusted Sideband Suppression This specification measures the amount by which the unwanted sideband of the input signal is attenuated in the output of the modulator, relative to the wanted sideband. It is assumed that the baseband inputs delivered to the modulator input pins are perfectly matched in amplitude and are exactly 90° out of phase. Unadjusted sideband suppression is measured in dBc. Adjusted (Optimized) Sideband Suppression This differs from the unadjusted sideband suppression in that the baseband inputs are iteratively adjusted around their theoretical values to maximize the amount of sideband suppression. Adjusted sideband suppression is measured in dBc. Suppressions Over Temperature This specification assumes that the user has gone through the optimization process for the suppression in question, and set the optimal settings for the I, Q inputs at room temperature. This specification then measures the suppression when temperature conditions change after the initial calibration is done. 6 Submit Documentation Feedback TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 TYPICAL CHARACTERISTICS For all the performance plots in this section, TA = –40°C to 85°C, VCC = 5 V, VCM = 3.7 differentially at a frequency of 50 kHz for an suppressions, the point of optimization is noted level of >50 dBc is assumed to be optimized. the following conditions were used, unless otherwise noted: V, fLO = 942.5 MHz at PLO = 0 dBm, I and Q inputs driven output power level Pout = 0 dBm. In the case of optimized and is always at nominal conditions and room temperature. A OUTPUT POWER vs I, Q AMPLITUDE OUTPUT POWER vs I, Q AMPLITUDE 10 10 5 –40°C 5 0 POUT − Output Power − dBm POUT − Output Power − dBm –40°C 85°C 25°C −5 −10 −15 −20 85°C 0 25°C −5 −10 −15 −20 fLO = 400 MHz fLO = 942.5 MHz −25 −25 0 1 2 3 4 I, Q Amplitude − VPP 0 1 2 3 4 I, Q Amplitude − VPP G001 Figure 1. Figure 2. OUTPUT POWER vs I, Q AMPLITUDE SECOND USB vs I, Q AMPLITUDE 10 0 5 −10 G002 –40°C −20 0 85°C 25°C 2nd USB − dBc POUT − Output Power − dBm fLO = 400 MHz −5 −10 −15 −30 −40 –40°C −50 85°C −60 −20 −70 fLO = 1500 MHz 25°C −80 −25 0 1 2 I, Q Amplitude − VPP 3 0 4 1 2 I, Q Amplitude − VPP G003 Figure 3. 3 4 G004 Figure 4. Submit Documentation Feedback 7 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) SECOND USB vs I, Q AMPLITUDE SECOND USB vs I, Q Amplitude 0 0 fLO = 942.5 MHz fLO = 1500 MHz −10 −10 −20 −30 2nd USB − dBc 2nd USB − dBc −20 –40°C −40 −50 −40 25°C 85°C −60 25°C 85°C −50 −70 −80 −60 0 1 2 3 4 I, Q Amplitude − VPP 0 3 4 G005 G006 Figure 6. UNADJUSTED CARRIER SUPPRESSION vs OUTPUT POWER UNADJUSTED CARRIER SUPPRESSION vs OUTPUT POWER 80 CS − Unadjusted Carrier Suppression − dBc 85°C 40 –40°C 25°C 30 20 10 −10 −5 0 POUT − Output Power − dBm 5 10 fLO = 942.5 MHz 70 –40°C 60 50 40 25°C 85°C 30 20 10 0 −15 G007 Figure 7. 8 2 Figure 5. fLO = 400 MHz 0 −15 1 I, Q Amplitude − VPP 50 CS − Unadjusted Carrier Suppression − dBc –40°C −30 −10 −5 0 POUT − Output Power − dBm Figure 8. Submit Documentation Feedback 5 10 G008 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) UNADJUSTED CARRIER SUPPRESSION vs OUTPUT POWER UNADJUSTED SIDEBAND SUPPRESSION vs OUTPUT POWER 60 SS − Unadjusted Sideband Suppression − dBc CS − Unadjusted Carrier Suppression − dBc 80 fLO = 1500 MHz 70 60 50 40 –40°C 30 20 25°C 85°C 10 0 −15 −10 −5 0 5 30 25°C 85°C 20 10 −20 G009 −10 0 Figure 9. Figure 10. UNADJUSTED SIDEBAND SUPPRESSION vs OUTPUT POWER UNADJUSTED SIDEBAND SUPPRESSION vs OUTPUT POWER 10 G010 60 85°C SS − Unadjusted Sideband Suppression − dBc SS − Unadjusted Sideband Suppression − dBc –40°C 40 POUT − Output Power − dBm 60 50 40 25°C –40°C 30 20 10 fLO = 942.5 MHz 0 −25 50 0 −30 10 POUT − Output Power − dBm fLO = 400 MHz −15 −5 POUT − Output Power − dBm fLO = 1500 MHz 50 –40°C 40 30 25°C 10 0 −30 5 85°C 20 G011 Figure 11. −20 −10 0 POUT − Output Power − dBm 10 G012 Figure 12. Submit Documentation Feedback 9 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) THIRD LSB vs OUTPUT POWER THIRD LSB vs OUTPUT POWER 0 0 fLO = 400 MHz fLO = 942.5 MHz −20 –40°C −20 3rd LSB − dBc 3rd LSB − dBc –40°C −40 85°C −60 −80 −40 85°C −60 −80 25°C −100 −30 25°C −20 −10 0 −100 −30 10 POUT − Output Power − dBm −20 −10 0 10 POUT − Output Power − dBm G013 Figure 13. Figure 14. THIRD LSB vs OUTPUT POWER IMD3 vs OUTPUT POWER PER TONE G014 0 0 fLO = 1500 MHz fLO = 400 MHz −10 −20 −40 IMD3 − dBc 3rd LSB − dBc −20 85°C −60 –40°C −30 −40 −50 85°C –40°C −60 −80 −70 25°C −100 −30 −20 −10 0 POUT − Output Power − dBm 10 −80 −15 G015 Figure 15. 10 25°C −10 −5 POUT − Output Power Per Tone − dBm Figure 16. Submit Documentation Feedback 0 G016 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) IMD3 vs OUTPUT POWER PER TONE IMD3 vs OUTPUT POWER PER TONE 0 0 fLO = 942.5 MHz fLO = 1500 MHz −10 −10 −20 IMD3 − dBc IMD3 − dBc −20 −30 25°C −40 85°C −30 −40 85°C −50 –40°C −50 −60 –40°C −60 −70 25°C −70 −15 −10 −5 −80 −15 0 POUT − Output Power Per Tone − dBm G017 0 Figure 18. P1dB vs FREQUENCY UNADJUSTED CARRIER SUPPRESSION vs FREQUENCY G018 60 CS − Unadjusted Carrier Suppression − dBc 25°C 7 6 P1dB − dBm −5 Figure 17. 8 85°C –40°C 5 −10 POUT − Output Power Per Tone − dBm 4 3 2 1 0 85°C 50 40 25°C 30 20 –40°C 10 0 0 500 1000 1500 fLO − Frequency − MHz 2000 0 G019 Figure 19. 500 1000 1500 fLO − Frequency − MHz 2000 G020 Figure 20. Submit Documentation Feedback 11 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) UNADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY OUTPUT POWER FLATNESS vs FREQUENCY (POUT = 0, –10 dBm NOMINAL) 2 25°C 85°C POUT − Output Power Flatness − dBm SS − Unadjusted Sideband Suppression − dBc 60 50 40 25°C 30 –40°C 20 10 0 −2 –40°C 85°C −4 −6 −8 25°C 85°C −10 –40°C −12 850 0 0 500 1000 1500 2000 900 950 1000 fLO − Frequency − MHz fLO − Frequency − MHz G021 Figure 21. Figure 22. SECOND USB vs FREQUENCY THIRD LSB vs FREQUENCY 1050 G022 −40 −40 POUT = 0 dBm POUT = 0 dBm −45 −45 −50 3rd LSB − dBc 2nd USB − dBc 85°C –40°C −50 −55 −60 −65 25°C 25°C −55 –40°C −70 85°C −75 −60 850 900 950 1000 fLO − Frequency − MHz 1050 −80 850 G023 Figure 23. 12 900 950 Figure 24. Submit Documentation Feedback 1000 fLO − Frequency − MHz 1050 G024 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) CARRIER SUPPRESSION vs FREQUENCY SIDEBAND SUPPRESSION vs FREQUENCY 80 85°C 25°C SS − Sideband Suppression − dBc CS − Carrier Suppression − dBc 80 60 –40°C 40 Optimization Point 20 85°C 900 –40°C 40 Optimization Point 20 POUT = 0 dBm Optimized at 942.5 MHz 0 850 POUT = 0 dBm Optimized at 942.5 MHz 950 1000 fLO − Frequency − MHz 0 850 1050 900 950 1000 fLO − Frequency − MHz G025 Figure 25. Figure 26. OUTPUT POWER FLATNESS vs VCM (POUT = 0 dBm NOMINAL) CARRIER SUPPRESSION vs VCM 4 1050 G026 70 85°C fLO = 942.5 MHz 60 CS − Carrier Suppression − dBc POUT − Output Power Flatness− dBm 25°C 60 2 –40°C 25°C 0 85°C −2 50 –40°C 40 Optimization Point 30 20 10 −4 3.0 3.5 4.0 4.5 5.0 25°C POUT = 0 dBm fLO = 942.5 MHz Optimized at 3.7 V 0 3.0 VCM − V 3.5 4.0 4.5 VCM − V G027 Figure 27. G028 Figure 28. Submit Documentation Feedback 13 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) SIDEBAND SUPPRESSION vs VCM SECOND USB vs VCM 60 −30 25°C −40 –40°C –40°C 25°C 50 −50 85°C 2nd USB − dBc SS − Sideband Suppression − dBc 70 40 Optimization Point 30 −60 85°C −70 20 10 −80 POUT = 0 dBm fLO = 942.5 MHz Optimized at 3.7 V 0 3.0 POUT = 0 dBm fLO = 942.5 MHz 3.5 4.0 −90 3.0 4.5 3.5 4.0 4.5 VCM − V VCM − V G030 G029 Figure 29. Figure 30. THIRD LSB vs VCM SUPPLY CURRENT vs SUPPLY VOLTAGE 0 −10 200 POUT = 0 dBm fLO = 942.5 MHz fLO = 942.5 MHz ICC − Supply Current − mA 180 3rd LSB − dBc −20 −30 –40°C −40 85°C −50 85°C 160 25°C 140 –40°C 120 −60 25°C −70 3.0 3.5 4.0 4.5 100 4.0 VCM − V G031 Figure 31. 14 4.5 5.0 Figure 32. Submit Documentation Feedback 5.5 VCC − Supply Voltage − V 6.0 G032 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) OUTPUT POWER FLATNESS vs SUPPLY VOLTAGE (POUT = 0 dBm NOMINAL) CARRIER SUPPRESSION vs SUPPLY VOLTAGE 80 3 fLO = 942.5 MHz CS − Carrier Suppression − dBc POUT − Output Power − dBm 2 1 25°C –40°C 0 85°C −1 −2 −3 4.0 60 50 25°C 4.5 5.0 5.5 –40°C 40 Optimization Point 30 20 10 VCC − Supply Voltage − V POUT = 0 dBm fLO = 942.5 MHz Optimized at 5 V 0 4.0 6.0 4.5 5.0 5.5 VCC − Supply Voltage − V G033 Figure 33. Figure 34. SIDEBAND SUPPRESSION vs SUPPLY VOLTAGE SECOND USB vs SUPPLY VOLTAGE 80 6.0 G034 0 POUT = 0 dBm fLO = 942.5 MHz 70 25°C −10 85°C 60 −20 50 –40°C 40 30 2nd USB − dBc SS − Sideband Suppression − dBc 85°C 70 Optimization Point −30 −40 25°C 20 10 0 4.0 −50 POUT = 0 dBm fLO = 942.5 MHz Optimized at 5 V 4.5 5.0 5.5 VCC − Supply Voltage − V 6.0 −60 4.0 85°C 4.5 –40°C 5.0 5.5 VCC − Supply Voltage − V G035 Figure 35. 6.0 G036 Figure 36. Submit Documentation Feedback 15 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) THIRD LSB vs SUPPLY VOLTAGE OUTPUT POWER FLATNESS vs LO INPUT POWER (POUT = 0 dBm NOMINAL) 0 fLO = 942.5 MHz POUT − Output Power Flatness − dBm −10 3 POUT = 0 dBm fLO = 942.5 MHz 3rd LSB − dBc −20 −30 −40 85°C −50 −60 −70 –40°C 2 1 25°C –40°C 0 85°C −1 −2 25°C −80 4.0 4.5 5.0 5.5 −3 −15 6.0 VCC − Supply Voltage − V −10 −5 0 G037 Figure 37. Figure 38. CARRIER SUPPRESSION vs LOCAL OSCILLATOR INPUT POWER 80 CS − Carrier Suppression − dBc 70 85°C 25°C 60 50 –40°C 40 Optimization Point 30 20 10 0 −15 POUT = 0 dBm fLO = 942.5 MHz Optimized at 0 dBm −10 −5 0 5 10 PLO − Local Oscillator Input Power − dBm Figure 39. 16 5 10 PLO − Local Oscillator Input Power − dBm Submit Documentation Feedback 15 G039 15 G038 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 Table 2. RFOUT and LO Pin Impedance Frequency (MHz) Z (RFOUT Pin) Z (LO Pin) 100 8.59 – j 130.2 33.95 – j 106.93 200 7.12 – j 61.22 29.54 – j 52.57 300 8.52 – j 36.37 28.65 - j 31.83 400 10.5 – j 23.72 29.371 – j 19.33 500 12.82 – j 15.51 30.78 – j 11.42 600 15.26 – j 9.33 32.64 – j 6.06 700 187.1 – j 4.77 34.99 – j 1.65 800 20.8 – j 1.2 36.55 + j 1.65 900 24.2 + j 2.0 38.52 + j 3.98 1000 28.7 + j 4.9 40.29 + j 5.92 1100 32.35 + j 6.61 42.21 + j 6.98 1200 37.15 + j 6.88 44.09 + j 7.55 1300 40.55 + j 6.64 45.7 + j 7.96 1400 43.76 + j 6.4 47 + j 7.76 1500 46.6 + j 6.03 48.28 + j 7.39 SIDEBAND SUPPRESSION vs LOCAL OSCILLATOR INPUT POWER SECOND USB vs LOCAL OSCILLATOR INPUT POWER −35 POUT = 0 dBm fLO = 942.5 MHz 60 −40 85°C 50 −45 2nd USB − dBc SS − Sideband Suppression − dBc 70 25°C 40 Optimization Point 30 –40°C −50 25°C −55 20 –40°C 10 0 −15 −60 POUT = 0 dBm fLO = 942.5 MHz Optimized at 0 dBm −10 −5 0 5 10 PLO − Local Oscillator Input Power − dBm 15 −65 −15 G040 Figure 40. 85°C −10 −5 0 5 10 PLO − Local Oscillator Input Power − dBm 15 G041 Figure 41. Submit Documentation Feedback 17 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 THIRD LSB vs LOCAL OSCILLATOR INPUT POWER NOISE DISTRIBUTION AT 6 MHZ OFFSET OVER TEMPERATURE 20 −40 POUT = 0 dBm fLO = 942.5 MHz 18 85°C −50 16 25°C 14 −70 Percentage −60 3rd LSB − dBc POUT = 0 dBm fLO = 942.5 MHz –40°C −80 12 10 8 6 4 −90 −148.4 −148.6 −148.8 G042 −149.2 PLO − Local Oscillator Input Power − dBm −149.0 15 −149.4 10 −149.6 5 −149.8 0 −150.2 −5 −150.0 0 −10 −150.4 −100 −15 −150.6 2 Noise − dBm/Hz G043 Figure 42. Figure 43. NOISE DISTRIBUTION AT 6 MHZ OFFSET OVER TEMPERATURE NOISE DISTRIBUTION AT 6 MHZ OFFSET OVER TEMPERATURE 18 16 14 14 12 12 Noise − dBm/Hz −152.2 −152.4 −152.6 −152.8 Noise − dBm/Hz G044 Figure 44. 18 −153.0 −153.2 −153.4 −153.8 −151.0 −151.2 −151.4 −151.8 0 −151.6 0 −152.0 2 −152.2 2 −152.6 4 −152.4 4 −152.8 6 −153.0 6 −153.6 8 −154.0 8 10 −154.2 10 POUT = –10 dBm fLO = 942.5 MHz −154.6 Percentage 16 −153.2 Percentage 18 20 POUT = –5 dBm fLO = 942.5 MHz −154.4 20 G045 Figure 45. Submit Documentation Feedback TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 NOISE AT 6 MHz OFFSET vs OUTPUT POWER GMSK SPECTRAL PERFORMANCE vs CHANNEL POWER −135 0 GMSK Spectral Performance − dBc in 30 kHz fLO = 942.5 MHz Noise − dBm/Hz −140 −145 25°C 85°C −150 −155 –40°C −160 −15 −10 −5 0 5 fLO = 942.5 MHz −20 −30 −40 −50 −60 400 kHz Offset −70 −80 600 kHz Offset −90 −100 −12 10 POUT − Output Power − dBm −10 −10 −8 −6 −4 −2 0 2 4 Channel Power − dBm G046 G047 Figure 46. Figure 47. GSM EDGE EVM vs CHANNEL POWER UNADJUSTED CARRIER SUPPRESSION vs FREE-AIR TEMPERATURE 2.5 55 Unajusted Carrier Supression − dBc fLO = 942.5 MHz GSM Edge EVM − % 2.0 1.5 1.0 0.5 0.0 −12 −10 −8 −6 −4 −2 0 2 4 fLO = 340 MHz 45 40 35 30 −50 6 fLO = 140 MHz 50 −25 0 25 50 75 100 TA − Free-Air Temperature − °C Channel Power − dBm G048 Figure 48. Figure 49. Submit Documentation Feedback 19 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 SIDEBAND SUPPRESSION vs LO FREQUENCY 48 TA = 255C Sideband Suppression − dBc 46 TA = 855C 44 42 TA = −405C 40 38 36 TA = −405C 34 TA = 855C TA = 255C 32 30 0 200 400 600 800 1000 fLO − LO Frequency − MHz Figure 50. THEORY OF OPERATION The TRF3701 employs a double-balanced mixer architecture in implementing the direct I, Q upconversion. The I, Q inputs can be driven single-endedly or differentially, with comparable performance in both cases. The common mode level (VCM) of the four inputs (IVIN, IREF, QVIN, QREF) is typically set to 3.7 V and needs to be driven externally. These inputs go through a set of differential amplifiers and through a V-I converter feed the double-balanced mixers. The AC-coupled LO input to the device goes through a phase splitter to provide the in-phase and quadrature signals that in turn drive the mixers. The outputs of the mixers are then summed, converted to single-ended signals, and amplified before they are fed to the output port RFOUT. The output of the TRF3701 is ac-coupled and can drive 50-Ω loads. EQUIVALENT CIRCUITS Figure 51 through Figure 54 show equivalent schematics for the main inputs and outputs of the device. I, Q Baseband LO 50 Ω S0001-01 Figure 51. LO Equivalent Input Circuit 20 S0002-01 Figure 52. IVIN, QVIN, IREF, QREF Equivalent Circuit Submit Documentation Feedback TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 50 kΩ RFOUT Power Down S0003-01 Figure 53. RFOUT Equivalent Circuit S0004-01 Figure 54. Power-Down (PWD) Equivalent Circuit Submit Documentation Feedback 21 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 APPLICATION INFORMATION DRIVING THE I, Q INPUTS There are several ways to drive the four baseband inputs of the TRF3701 to the required amplitude and dc offset. The optimal configuration depends on the end application requirements and the signal levels desired by the designer. The TRF3701 is by design a differential part, meaning that ideally the user should provide fully complementary signals. However, similar performance in every respect can be achieved if the user only has single-ended signals available. In this case, the IREF and QREF pins just need to have the VCM dc offset applied. Implementing a Single-to-Differential Conversion for the I, Q inputs In case differential I, Q signals are desired but not available, the THS4503 family of wideband, low-distortion, fully differential amplifiers can be used to provide a convenient way of performing this conversion. Even if differential signals are available, the THS4503 can provide gain in case a higher voltage swing is required. Besides featuring high bandwidth and high linearity, the THS4503 also provides a convenient way of applying the VCM to all four inputs to the modulator through the VOCM pin (pin 2). The user can further adjust the dc levels for optimum carrier suppression by injecting extra dc at the inputs to the operational amplifier, or by individually adding it to the four outputs. Figure 55 shows a typical implementation of the THS4503 as a driver for the TRF3701. Gain can be easily incorporated in the loop by adjusting the feedback resistors appropriately. For more details, see the THS4503 data sheet at www.ti.com. 22 Submit Documentation Feedback TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 APPLICATION INFORMATION (continued) 10 pF 392 Ω +8 VA VCM 0.01 µF 0.1 µF 0.01 µF 7 3 +VCC NC 374 Ω Single-Ended I Input 8 2 402 Ω 0.1 µF THS4503 5 22.1 Ω 4 22.1 Ω IREF VOUT− VOCM VOUT+ 1 IREF + − IVIN IVIN −VCC 6 −8 VA 0.1 µF 0.01 µF 392 Ω 10 pF S0005-02 Figure 55. Using the THS4503 to Condition the Baseband Inputs to the TRF3701 (I Channel Shown) DRIVING THE LOCAL OSCILLATOR INPUT The LO pin is internally terminated to 50 Ω, thus enabling easy interface to the LO source without the need for external impedance matching. The power level of the LO signal should be in the range of –6 to 6 dBm. For characterization purposes, a power level of 0 dBm was chosen. An ideal way of driving the LO input of the TRF3701 is by using the TRF3750, an ultralow-phase-noise integer-N PLL from Texas Instruments. Combining Submit Documentation Feedback 23 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 APPLICATION INFORMATION (continued) the TRF3750 with an external VCO can complete the loop and provide a flexible, convenient and cost-effective solution for the local oscillator of the transmitter. Figure 56 shows a typical application for the LO driver network that incorporates the TRF3750 integer-N PLL synthesizer into the design. Depending on the VCO output and the amount of signal loss, an optional gain stage may be added to the output of the VCO before it is applied to the TRF3701 LO input. DVDD 10 pF + VVCO 0.1 mF 0.1 mF 10 pF + 10 pF CE 100 pF 15 7 AVDD 10 SUPPLY + 10 mF 0.1 mF 0.1 mF 10 mF To TRF3701 LO Input + 10 mF 10 pF DVDD 10 mF VCP AVDD VCP 16 16.5 W 1 nF GND TCXO (10-MHz Reference) 8 REFIN CPOUT 20 kW 2 1 nF TRF3750 DECOUPLING NOT SHOWN RSET 10 nF V TUNE 82 pF GND 1 OUT VCO 16.5 W 100 pF GND 16.5 W 3.9 kW RSET 4.7 kW 12 LE 13 RFINA DATA LE MUXOUT DGND DATA CLK CPGND 11 AGND CLK 3 4 9 RFINB 6 14 LOCK DETECT 100 pF 49.9 W 5 100 pF S0009-01 Figure 56. Typical Application Circuit for Generating the LO Signal for the TRF3701 Modulator PCB LAYOUT CONSIDERATIONS The TRF3701 is a high-performance RF device; hence, care should be taken in the layout of the PCB in order to ensure optimum performance. Proper decoupling with low ESR capacitors is needed for the VCC supplies (pins 6 and 10). Typical values used are in the order of 1 pF in parallel to 0.1 µF, with the lower-valued capacitors placed closer to the device pins. In addition, a larger tank capacitor in the order of 10 µF should be placed on the supply line as layout permits. At least a 4-layer board is recommended for the PCB. If possible, a solid ground plane and a ground pour is also recommended, as is a power plane for the supplies. Because the balance of the four I, Q inputs to the modulator can be critical to device performance, care should be taken to ensure that the trace runs for all four inputs are equidistant. In the case of single-ended drive of the I, Q inputs, the two unused pins IREF and QREF are fed with the VCM dc voltage only, and should be decoupled with a 0.1-µF capacitor (or smaller). The LO input trace should be minimized in length and have controlled impedance of 50 Ω. No external matching components are needed because there is an internal 50-Ω termination. The RFOUT pin should also have a relatively small trace to minimize parasitics and coupling, and should also be controlled to 50 Ω. An impedance-matching network can be used to optimize power transfer, but is not critical. All the results shown in the data sheet were taken with no impedance matching network used (RFOUT directly driving an external 50-Ω load). The exposed thermal and ground pad on the bottom of the TRF3701 should be soldered to ground to ensure optimum electrical and thermal performance. The landing pattern on the PCB should include a solid pad and 4 thermal vias. These vias typically have 1,2-mm pitch and 0,3-mm diameter. The vias can be arranged in a 2×2 array. The thermal pad on the PCB should be at least 1.65×1.65 mm. IMPLEMENTING A DIRECT UPCONVERSION TRANSMITTER USING A TI CommsDAC The TRF3701 is ideal for implementing a direct upconversion transmitter, where the input I, Q data can originate from an ASIC or a DAC. Texas Instruments' line of digital-to-analog converters (DAC) is ideally suited for interfacing to the TRF3701. Such DACs include, among others, the DAC290x series, DAC5672, and DAC5686. 24 Submit Documentation Feedback TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 APPLICATION INFORMATION (continued) This section illustrates the use of the DAC5686, which offers a unique set of features that make interfacing to the TRF3701 easy and convenient. The DAC5686 is a 16-bit, 500 MSPS, 2×–16× interpolating dual-channel DAC, and it features I, Q adjustments for optimal interface to the TRF3701. User-selectable, 11-bit offset and 12-bit gain adjustments can optimize the carrier and sideband suppression of the modulator, resulting in enhanced performance and relaxed filtering requirements at RF. The preferred mode of operation of the DAC5686 for direct interface with the TRF3701 at baseband is the dual-DAC mode. The user also has the flexibility of selecting any one of the four possible complex spectral bands to be fed into the TRF3701. For details on the available modes and programming, see the DAC5686 data sheet available at www.ti.com. Figure 57 shows the DAC5686 in dual-DAC mode, which is best-suited for zero-IF interface to the TRF3701. In this mode, a seamless, passive interface between the DAC output and the input to the modulator is used, so that no extra components are needed between the two devices. The optimum dc offset level for the inputs to the TRF3701 (VCM) is approximately 3.7 V. The output of the DAC should be centered around 3.3 V or less (depending on signal swing), in order to ensure that its output compliance limits are not exceeded. The resistive network shown in Figure 57 allows for this dc offset transition while still providing a dc path between the DAC output and the modulator. This ensures that the dc offset adjustments on the DAC5686 can still be applied to optimize the carrier suppression at the modulator output. The combination of the DAC5686 and the TRF3701 provides a unique signal-chain solution with state-of-the-art performance for wireless infrastructure applications. GND +5 V VCC 221W 221W 49.9W 49.9W Fdata A Offset IOUTA1 IVIN IREF 15W DEMUX 16-Bit DAC IOUTA2 DA[15:0] 15W A Gain +45° LO B Gain 16-Bit DAC B Offset DAC5686 Σ RFOUT 50 Ω 15W DB[15:0] –45° IOUTB1 QVIN 15W IOUTB2 QREF 49.9W 221W 221W 49.9W TRF3701 PWD GND GND +5 V S0010-01 Figure 57. DAC5686 in Dual-DAC Mode with Quadrature Modulator Submit Documentation Feedback 25 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 APPLICATION INFORMATION (continued) TRF3701 Power Down (PWD) Pin Operation The power down pin (PWD) in the TRF3701 powers down the chip when 0V is applied to this pin. The TRF3701 is enabled when 5V is applied to the PWD pin. Figure 58 shows the output power as a function of time when the PWD pin is pulled down from 5V to 0V. Both the I/Q signals and the LO are present during the power down. Figure 59 shows the output power as a function of time when the PWD pin is pulled up from 0V to 5V. In both the power down and power up operation there is a smooth transition with no glitches in output power. The device will not turn on till a voltage greater than 1.2V is applied at the PWD pin. In addition the device does not turn off till the PWD is pulled below 3.7V. This ensures that the device does not accidentally change state due to glitches on the PWD pin. The turn on time of the device is 120 ns and the turn off time is 20 ns. Figure 58. Output power as a Function of Time During a Power-Down Operation (PWD Pin goes from 5V to 0V) 26 Submit Documentation Feedback TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 APPLICATION INFORMATION (continued) Figure 59. Output Power as a Function of Time During a Power-Up Operation (PWD Pin goes from 0V to 5V) Optimizing Carrier and Sideband Suppression For more information on optimizing carrier and sideband suppression, please See Optimizing Carrier and Sideband Suppression (SLWA046). Submit Documentation Feedback 27 TRF3701 www.ti.com SLWS145D – FEBRUARY 2003 – REVISED AUGUST 2006 Revision History DATE REV PAGE 29 JUL 05 C 1 SECTION DESCRIPTION Changed data sheet title from "0.4 GHz" to "0.14 GHz" 2 ESD Added ESD statement 3 Recommended Operating Conditions Changed Input frequency from minimum 400 to minimum 140 4 RF Output Performance Added 942.5 MHz to table title 5 RF Output Performance Added RF output performance table for 340 MHz and 140 MHz 19 Typical Characteristics Added Unadjusted Carrier Suppression vs Free-Air Temperature graph 20 Typical Characteristics Added Sideband Suppression vs LO Frequency graph 26 Application Information Added TRF3701 Power Down (PWD) Pin Operation section 27 Application Information Added Optimizing Carrier and Sideband Suppression section 28 Thermal Information Added Thermal Information section Added PWD operation specifications 23 JUN 04 B – – Changes unknown 26 MAR 04 A – – Changes unknown 12 FEB 03 * – – Original version 28 Submit Documentation Feedback PACKAGE OPTION ADDENDUM www.ti.com 5-Feb-2007 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TRF3701IRHC ACTIVE QFN RHC 16 92 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TRF3701IRHCG4 ACTIVE QFN RHC 16 92 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TRF3701IRHCR ACTIVE QFN RHC 16 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TRF3701IRHCRG4 ACTIVE QFN RHC 16 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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