TOUCHSTONE TS1005

TS1005
A 0.8V TO 5.5V, 1.3µA, 20kHz RAIL-TO-RAIL SINGLE OP AMP
DESCRIPTION
FEATURES
Single 0.8V to 5.5V Operation
Supply current: 1.3μA (typ)
Input Bias Current: 2pA (typ)
Low TCVOS: 9µV/°C (typ)
AVOL Driving 100kΩ Load: 90dB (min)
Gain-Bandwidth Product: 20kHz
Unity Gain Stable
Rail-to-rail Input and Output
No Output Phase Reversal
5-pin SC70 Package
APPLICATIONS
Battery/Solar-Powered Instrumentation
Portable Gas Monitors
Low-voltage Signal Processing
Micropower Active Filters
Wireless Remote Sensors
Battery-powered Industrial Sensors
Active RFID Readers
Powerline or Battery Current Sensing
Handheld/Portable POS Terminals
The TS1005 is a 1.3µA supply current, precision
CMOS operational amplifier designed to operate over
a supply voltage range from 0.8V to 5.5V with a
GBWP of 20kHz. Fully specified at 1.8V, the TS1005
is optimized for ultra-long-life battery-powered
applications. The TS1005 is Touchstone’s fifth
operational amplifier in the “NanoWatt Analog™”
high-performance analog integrated circuits portfolio.
The TS1005 exhibits a typical input bias current of
2pA, and rail-to-rail input and output stages. The
TS1005 can operate from single-supply voltages from
0.8V to 5.5V.
The TS1005’s combined features make it an excellent
choice in applications where very low supply current
and low operating supply voltage translate into very
long equipment operating time. Applications include:
micropower active filters, wireless remote sensors,
battery and powerline current sensors, portable gas
monitors, and handheld/portable POS terminals.
The TS1005 is fully specified over the industrial
temperature range (−40°C to +85°C) and is available
in a PCB-space saving 5-lead package.
TYPICAL APPLICATION CIRCUIT
A MicroWatt 2-Pole Sallen Key Low Pass Filter
30%
Supply Current Distribution
VDD = 1.8V
Percent of Units - %
25%
20%
15%
10%
5%
0%
Patent(s) Pending
NanoWatt Analog and the Touchstone Semiconductor logo are registered
trademarks of Touchstone Semiconductor, Incorporated.
TS1005DS r1p0
1.15
1.2
1.25
1.3
1.35
Supply Current - µA
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TS1005
ABSOLUTE MAXIMUM RATINGS
Total Supply Voltage (VDD to VSS) .............................. +6.0V
Voltage Inputs (IN+, IN-) ........... (VSS - 0.3V) to (VDD + 0.3V)
Differential Input Voltage ............................................ ±6.0 V
Input Current (IN+, IN-) .............................................. 20 mA
Output Short-Circuit Duration to GND .................... Indefinite
Continuous Power Dissipation (TA = +70°C)
5-Pin SC70 (Derate 3.87mW/°C above +70°C) ... 310 mW
Operating Temperature Range .................... -40°C to +85°C
Junction Temperature .............................................. +150°C
Storage Temperature Range ..................... -65°C to +150°C
Lead Temperature (soldering, 10s) ............................. +300°
Electrical and thermal stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections
of the specifications is not implied. Exposure to any absolute maximum rating conditions for extended periods may affect device reliability and
lifetime.
PACKAGE/ORDERING INFORMATION
TAPE & REEL
ORDER NUMBER
TS1005IJ5TP
TS1005IJ5T
PART
PACKAGE
MARKING QUANTITY
TAJ
--3000
Lead-free Program: Touchstone Semiconductor supplies only lead-free packaging.
Consult Touchstone Semiconductor for products specified with wider operating temperature ranges.
Page 2
TS1005DS r1p0
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TS1005
ELECTRICAL CHARACTERISTICS
VDD = +1.8V, VSS = 0V, VINCM = VSS; RL = 100kΩ to (VDD-VSS)/2; TA = -40°C to +85°C, unless otherwise noted.
Typical values are at TA = +25°C. See Note 1
Parameters
Supply Voltage Range
Symbol
VDD-VSS
Conditions
Supply Current
ISY
RL = Open circuit
Input Offset Voltage
VOS
VIN = VSS or VDD
Input Offset Voltage Drift
TCVOS
Input Bias Current
IIN+, IIN-
Input Offset Current
IOS
Input Voltage Range
IVR
Common-Mode Rejection Ratio
CMRR
Power Supply Rejection Ratio
PSRR
Output Voltage High
Output Voltage Low
Short-circuit Current
VOH
VOL
ISC+
ISC-
Open-loop Voltage Gain
AVOL
Gain-Bandwidth Product
GBWP
Phase Margin
Slew Rate
Full-power Bandwidth
Input Voltage Noise Density
Input Current Noise Density
φM
SR
FPBW
en
in
TA = 25°C
-40°C ≤ TA ≤ 85°C
TA = 25°C
-40°C ≤ TA ≤ 85°C
TA = 25°C
VIN+, VIN- = (VDD - VSS)/2
-40°C ≤ TA ≤ 85°C
TA = 25°C
Specified as IIN+ - IINVIN+, VIN- = (VDD - VSS)/2
-40°C ≤ TA ≤ 85°C
Guaranteed by Input Offset Voltage Test
TA = 25°C
Vdd = 5.5V, 0V ≤ VIN(CM) ≤ 5.0V
-40°C ≤ TA ≤ 85°C
TA = 25°C
0.8V ≤ (VDD - VSS) ≤ 5.5V
-40°C ≤ TA ≤ 85°C
TA = 25°C
Specified as VDD - VOUT,
RL = 100kΩ to VSS
-40°C ≤ TA ≤ 85°C
TA = 25°C
Specified as VDD - VOUT,
RL = 10kΩ to VSS
-40°C ≤ TA ≤ 85°C
TA = 25°C
Specified as VOUT - VSS,
RL = 100kΩ to VDD
-40°C ≤ TA ≤ 85°C
TA = 25°C
Specified as VOUT - VSS,
RL = 10kΩ to VDD
-40°C ≤ TA ≤ 85°C
TA = 25°C
VOUT = VSS
-40°C ≤ TA ≤ 85°C
TA = 25°C
VOUT = VDD
-40°C ≤ TA ≤ 85°C
TA = 25°C
VSS+50mV ≤ VOUT ≤ VDD-50mV
-40°C ≤ TA ≤ 85°C
RL = 100kΩ to VSS, CL = 20pF
Unity-gain Crossover,
RL = 100kΩ to VSS, CL = 20pF
RL = 100kΩ to VSS, AVCL = +1V/V
FPBW = SR/(π • VOUT,PP); VOUT,PP = 0.7VPP
f = 1kHz
f = 1kHz
Min
0.8
Typ
1.3
0.8
9
2
2
VSS
70
68
70
67
90
3.7
1.5
15
7
91
84
Units
V
µA
mV
µV/°C
pA
100
pA
50
VDD
V
dB
90
30
2
Max
5.5
1.6
1.8
3
5
4
dB
6
mV
60
6
mV
30
mA
15
110
dB
20
kHz
70
degrees
7.5
3400
0.6
10
V/ms
Hz
µV/√Hz
pA/√Hz
Note 1: All specifications are 100% tested at TA = +25°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by
device characterization, not production tested.
TS1005DS r1p0
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TS1005
TYPICAL PERFORMANCE CHARACTERISTICS
Supply Current vs Supply Voltage
Supply Current vs Input Common-Mode Voltage
1.5
+85°C
1.4
SUPPLY CURENT - µA
SUPPLY CURENT - µA
1.5
+25°C
1.3
-40°C
1.2
1.1
1.3
1.2
1.1
1.6
2.4
3.1
3.9
4.7
0
5.5
0.6
1.2
1.8
SUPPLY VOLTAGE - Volt
INPUT COMMON-MODE VOLTAGE - Volt
Supply Current vs Input Common-Mode Voltage
Input Offset Voltage vs Supply Voltage
1.5
2.5
TA = +25°C
INPUT OFFSET VOLTAGE - mV
SUPPLY CURENT - µA
1.4
1.0
0.8
1.4
1.3
1.2
1.1
1.0
0
1.1
2.2
3.3
4.4
VINCM = 0V
1.25
VINCM = VDD
0
1.25
TA = +25°C
-2.5
5.5
0.8
1.6
2.4
3.1
3.9
4.7
5.5
INPUT COMMON-MODE VOLTAGE - Volt
SUPPLY VOLTAGE - Volt
Input Offset Voltage vs Input Common-Mode Voltage
Input Offset Voltage vs Input Common-Mode Voltage
0.9
INPUT OFFSET VOLTAGE - mV
0.7
INPUT OFFSET VOLTAGE - mV
TA = +25°C
0.35
0
-0.35
VDD =1.8V
TA = +25°C
-0.7
0.45
0
-0.45
VDD = 5.5V
TA = +25°C
-0.9
0
0.6
1.2
1.8
INPUT COMMON-MODE VOLTAGE - Volt
TS1005DS r1p0
0
1.1
2.2
3.3
4.4
5.5
INPUT COMMON-MODE VOLTAGE - Volt
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TS1005
TYPICAL PERFORMANCE CHARACTERISTICS
Input Bias Current (IIN+, IIN-) vs Input Common-Mode Voltage
6
VDD =1.8V
4
2
INPUT BIAS CURRENT - pA
INPUT BIAS CURRENT - pA
6
TA = +25°C
0
-2
TA = +85°C
-4
-6
Input Bias Current (IIN+, IIN-) vs Input Common-Mode Voltage
VDD = 5.5V
4
2
TA = +25°C
0
-2
TA = +85°C
-4
-6
0.6
0
1.2
0
1.8
1.1
2.2
3.3
4.5
5.5
INPUT COMMON-MODE VOLTAGE - Volt
Output Voltage High (VOH) vs Temperature, RLOAD =100kΩ
Output Voltage Low (VOL) vs Temperature, RLOAD =100kΩ
11
OUTPUT SATURATION VOLTAGE - mV
OUTPUT SATURATION VOLTAGE - mV
INPUT COMMON-MODE VOLTAGE - Volt
RL = 100kΩ
VDD = 5.5V
8
5
VDD = 1.8V
2
+25
-40
4.75
RL = 100kΩ
VDD = 5.5V
3.75
2.75
1.75
VDD = 1.8V
0.75
+85
110
RL = 10kΩ
VDD = 5.5V
80
50
VDD = 1.8V
20
TEMPERATURE - °C
TS1005DS r1p0
Output Voltage Low (VOL) vs Temperature, RLOAD =10kΩ
OUTPUT SATURATION VOLTAGE - mV
OUTPUT SATURATION VOLTAGE - mV
Output Voltage High (VOH) vs Temperature, RLOAD =10kΩ
+25
+85
TEMPERATURE - °C
TEMPERATURE - °C
-40
+25
-40
+85
50
RL = 10kΩ
VDD = 5.5V
40
30
20
VDD = 1.8V
10
-40
+25
+85
TEMPERATURE - °C
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TS1005
TYPICAL PERFORMANCE CHARACTERISTICS
10
Output Short Circuit Current, ISC- vs Temperature
OUTPUT SHORT-CIRCUIT CURRENT - mA
OUTPUT SHORT-CIRCUIT CURRENT - mA
Output Short Circuit Current, ISC+ vs Temperature
VOUT = 0V
8.5
VDD = 5.5V
7
5.5
VDD = 1.8V
4
+25
-40
+85
VOUT = VDD
23.5
VDD = 5.5V
19
VDD = 1.8V
14.5
10
-40
+85
+25
TEMPERATURE - °C
TEMPERATURE - °C
0.1Hz to 10Hz Output Voltage Noise
Gain and Phase vs. Frequency
60
100
50
70°
30
GAIN
20
65
10
0
20kHz
VOUT(N) - 100µV/DIV
83
PHASE - Degrees
PHASE
40
GAIN - dB
28
100µVPP
49
-10
10
100
1k
10k
100k
1 Second/DIV
FREQUENCY - Hz
Large-Signal Transient Response
VDD = 5.5V, VSS = GND, RLOAD = 100kΩ, CLOAD = 15pF
OUTPUT
OUTPUT
INPUT
INPUT
Small-Signal Transient Response
VDD = 5.5V, VSS = GND, RLOAD = 100kΩ, CLOAD = 15pF
200µs/DIV
Page 6
2ms/DIV
TS1005DS r1p0
RTFDS
TS1005
PIN FUNCTIONS
Pin
1
Label
OUT
2
VSS
3
4
+IN
-IN
5
VDD
Function
Amplifier Output.
Negative Supply or Analog GND. If applying a negative voltage to
this pin, connect a 0.1µF capacitor from this pin to analog GND.
Amplifier Non-inverting Input.
Amplifier Inverting Input.
Positive Supply Connection. Connect a 0.1µF bypass capacitor
from this pin to analog GND.
THEORY OF OPERATION
The TS1005 is fully functional for an input signal
from the negative supply (VSS or GND) to the
positive supply (VDD). The input stage consists of two
differential amplifiers, a p-channel CMOS stage and
an n-channel CMOS stage that are active over
different ranges of the input common mode voltage.
The p-channel input pair is active for input common
mode voltages, VINCM, between the negative supply
to approximately 0.4V below the positive supply. As
the common-mode input voltage moves closer
towards VDD, an internal current mirror activates the
n-channel input pair differential pair. The p-channel
input pair becomes inactive for the balance of the
input common mode voltage range up to the positive
supply. Because both input stages have their own
offset voltage (VOS) characteristic, the offset voltage
of the TS1005 is a function of the applied input
common-mode voltage, VINCM. The VOS has a
crossover point at ~0.4V from VDD (Refer to the VOS
vs. VCM curve in the Typical Operating
Characteristics section). Caution should be taken in
applications where the input signal amplitude is
comparable to the TS1005’s VOS value and/or the
APPLICATIONS INFORMATION
Portable Gas Detection Sensor Amplifier
Gas sensors are used in many different industrial
and medical applications. Gas sensors generate a
current that is proportional to the percentage of a
particular gas concentration sensed in an air
sample. This output current flows through a load
resistor and the resultant voltage drop is amplified.
Depending on the sensed gas and sensitivity of the
sensor, the output current can be in the range of
tens of microamperes to a few milliamperes. Gas
sensor datasheets often specify a recommended
TS1005DS r1p0
design requires high accuracy. In these situations, it
is necessary for the input signal to avoid the
crossover point. In addition, amplifier parameters
such as PSRR and CMRR which involve the input
offset voltage will also be affected by changes in the
input common-mode voltage across the differential
pair transition region.
The second stage is a folded-cascode transistor
arrangement that converts the input stage
differential signals into a single-ended output. A
complementary drive generator supplies current to
the output transistors that swing rail to rail.
The TS1005 output stages voltage swings within
3.5mV from the rails at 1.8V supply when driving an
output load of 100kΩ - which provides the maximum
possible dynamic range at the output. This is
particularly important when operating on low supply
voltages. When driving a stiffer 10kΩ load, the
TS1005 swings within 30mV of VDD and within 13mV
of VSS (or GND).
load resistor value or a range of load resistors from
which to choose.
There are two main applications for oxygen sensors
– applications which sense oxygen when it is
abundantly present (that is, in air or near an oxygen
tank) and those which detect traces of oxygen in
parts-per-million
concentration.
In
medical
applications, oxygen sensors are used when air
quality or oxygen delivered to a patient needs to be
monitored. In fresh air, the concentration of oxygen
is 20.9% and air samples containing less than 18%
oxygen are considered dangerous. In industrial
applications, oxygen sensors are used to detect the
Page 7
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TS1005
absence of oxygen; for example, vacuum-packaging
of food products is one example.
The circuit in Figure 1 illustrates a typical
implementation used to amplify the output of an
oxygen detector. The TS1005 makes an excellent
choice for this application as it only draws 1.3µA of
supply current and operates on supply voltages
way to achieve this objective is to use an RC filter at
the noninverting terminal of the TS1005. If additional
attenuation is needed, a two-pole Sallen-Key filter
can be used to provide the additional attenuation as
shown in Figure 3.
For best results, the filter’s cutoff frequency should
be 8 to 10 times lower than the TS1005’s crossover
frequency. Additional operational amplifier phase
margin shift can be avoided if the amplifier
bandwidth-to-signal bandwidth ratio is greater than
8.
The design equations for the 2-pole Sallen-Key lowpass filter are given below with component values
selected to set a 2kHz low-pass filter cutoff
frequency:
Figure 1: A Micropower, Precision Oxygen Gas Sensor
Amplifier.
down to 0.8V. With the components shown in the
figure, the circuit consumes less than 1.4μA of
supply current ensuring that small form-factor singleor button-cell batteries (exhibiting low mAh charge
ratings) could last beyond the operating life of the
oxygen sensor. The precision specifications of the
TS1005, such as its low offset voltage, low TCVOS,
low input bias current, high CMRR, and high PSRR
are other factors which make the TS1005 an
excellent choice for this application. Since oxygen
sensors typically exhibit an operating life of one to
two years, an oxygen sensor amplifier built around a
TS1005 can operate from a conventionally-available
single 1.5-V alkaline AA battery for over 145 years!
At such low power consumption from a single cell,
the oxygen sensor could be replaced over 75 times
before the battery requires replacing!
MicroWatt, Buffered Single-pole Low-Pass Filters
When receiving low-level signals, limiting the
bandwidth of the incoming signals into the system is
often required. As shown in Figure 2, the simplest
Figure 2: A Simple, Single-pole Active Low-Pass Filter.
Page 8
R1 = R2 = R = 1MΩ
C1 = C2 = C = 80pF
Q = Filter Peaking Factor = 1
f–3dB = 1/(2 x π x RC) = 2kHz
R3 = R4/(2-1/Q); with Q = 1, R3 = R4.
A Single +1.5 V Supply,
Instrumentation Amplifier
Two
Op
Amp
The TS1005’s ultra-low supply current and ultra-low
voltage operation make it ideal for battery-powered
applications such as the instrumentation amplifier
shown in Figure 4.
Figure 4: A Two Op Amp Instrumentation Amplifier.
The circuit utilizes the classic two op amp
instrumentation amplifier topology with four resistors
to set the gain. The equation is simply that of a
noninverting amplifier as shown in the figure.
Figure 3: A Micropower 2-Pole Sallen-Key Low-Pass Filter.
TS1005DS r1p0
RTFDS
TS1005
The two resistors labeled R1 should be closely
matched to each other as well as both resistors
labeled R2 to ensure acceptable common-mode
rejection performance.
Resistor networks ensure the closest matching as
well as matched drifts for good temperature stability.
Capacitor C1 is included to limit the bandwidth and,
therefore, the noise in sensitive applications. The
value of this capacitor should be adjusted depending
on the desired closed-loop bandwidth of the
instrumentation amplifier. The RC combination
creates a pole at a frequency equal to 1/(2π×R1C1).
If the AC-CMRR is critical, then a matched capacitor
to C1 should be included across the second resistor
labeled R1.
Because the TS1005 accepts rail-to-rail inputs, the
input common mode range includes both ground
and the positive supply of 1.5V. Furthermore, the
rail-to-rail output range ensures the widest signal
range possible and maximizes the dynamic range of
the system. Also, with its low supply current of
1.3μA, this circuit consumes a quiescent current of
only ~2.7μA, yet it still exhibits a 2-kHz bandwidth at
a circuit gain of 2.
Driving Capacitive Loads
While the TS1005’s internal gain-bandwidth product
is 20kHz, it is capable of driving capacitive loads up
to 50pF in voltage follower configurations without
any additional components. In many applications,
however, an operational amplifier is required to drive
much larger capacitive loads. The amplifier’s output
impedance and a large capacitive load create
additional phase lag that further reduces the
amplifier’s phase margin. If enough phase delay is
introduced, the amplifier’s phase margin is reduced.
The effect is quite evident when the transient
response is observed as there will appear noticeable
peaking/ringing in the output transient response.
and an RISO = 120kΩ. Note that as CLOAD is
increased a smaller RISO is needed for optimal
transient response.
Figure 5: Using an External Resistor to Isolate a CLOAD from
the TS1005’s Output
External Capacitive
External Output
Load, CLOAD
Isolation Resistor, RISO
0-50pF
Not Required
100pF
120kΩ
500pF
50kΩ
1nF
33kΩ
5nF
18kΩ
10nF
13kΩ
In the event that an external RLOAD in parallel with
CLOAD appears in the application, the use of an RISO
results in gain accuracy loss because the external
series RISO forms a voltage-divider with the external
load resistor RLOAD.
VIN
VOUT
If the TS1005 is used in an application that requires
driving larger capacitive loads, an isolation resistor
between the output and the capacitive load should
be used as illustrated in Figure 5.
Table 1 illustrates a range of RISO values as a
function of the external CLOAD on the output of the
TS1005. The power supply voltage used on the
TS1005 at which these resistor values were
determined empirically was 1.8V. The oscilloscope
capture shown in Figure 6 illustrates a typical
transient response obtained with a CLOAD = 100pF
TS1005DS r1p0
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TS1005
Configuring the TS1005 as Microwatt Analog
Comparator
design, therefore, was to set the feedback resistor
R3:
Although optimized for use as an operational
amplifier, the TS1005 can also be used as a rail-torail I/O comparator as illustrated in Figure 7.
R3 = 10MΩ
Calculating a value for R1 is given by the following
expression:
R1 = R3 x (VHYB/VDD)
Substituting VHYB = 100mV, VDD = 3.0V, and R3 =
10MΩ into the equation above yields:
R1 = 333kΩ
Figure 7: A MicroWatt Analog Comparator with UserProgrammable Hysteresis.
External hysteresis can be employed to minimize the
risk of output oscillation. The positive feedback
circuit causes the input threshold to change when
the output voltage changes state. The diagram in
Figure 8 illustrates the TS1005’s analog comparator
The following expression was then used to calculate
a value for R2:
R2 = 1/[VHI/(VREF x R1) – (1/R1) – (1/R3)]
Substituting VHI = 1V, VREF = 1.5V, R1 = 333kΩ, and
R3 = 10MΩ into the above expression yields:
R2 = 909kΩ
Printed Circuit Board Layout Considerations
Figure 8: Analog Comparator Hysteresis Band and Output
Switching Points.
hysteresis band and output transfer characteristic.
The design of an analog comparator using the
TS1005 is straightforward. In this application, a 3.0V
power supply (VDD) was used and the resistor divider
network formed by RD1 and RD2 generated a
convenient reference voltage (VREF) for the circuit at
½ the supply voltage, or 1.5V, while keeping the
current drawn by this resistor divider low. Capacitor
C1 is used to filter any extraneous noise that could
couple into the TS1005’s inverting input.
In this application, the desired hysteresis band was
set to 100mV (VHYB) with a desired high trip-point
(VHI) set at 1V and a desired low trip-point (VLO) set
at 0.9V.
Even though the TS1005 operates from a single
0.8V to 5.5V power supply and consumes very little
supply current, it is always good engineering
practice to bypass the power supplies with a 0.1μF
ceramic capacitor placed in close proximity to the
VDD and VSS (or GND) pins.
Good pcb layout techniques and analog ground
plane management improve the performance of any
analog circuit by decreasing the amount of stray
capacitance that could be introduced at the op amp's
inputs and outputs. Excess stray capacitance can
easily couple noise into the input leads of the op
amp and excess stray capacitance at the output will
add to any external capacitive load. Therefore, PC
board trace lengths and external component leads
should be kept a short as practical to any of the
TS1005’s package pins. Second, it is also good
engineering practice to route/remove any analog
ground plane from the inputs and the output pins of
the TS1005.
Since the TS1005 is a low supply current amplifier
(1.3µA, typical), it is desired that the design of an
analog comparator using the TS1005 should also
use as little current as practical. The first step in the
Page 10
TS1005DS r1p0
RTFDS
TS1005
Package outline drawing
5-Pin SC70 Package Outline Drawing
(N.B., Drawings are not to scale)
0.65 TYP.
0.15 - 0.30
5
2
4
1.80 - 2.40
1
3
2
1.30 TYP.
1.80 - 2.20
1
8º - 12º ALL
SIDE
0.800 – 0.925
LEAD FRAME THICKNESS
0.10 - 0.18
0.40 – 0.55
0.15
TYP.
GAUGE PLANE
1.00
MAX
0.00 - 0.10
1.15 - 1.35
0.10 MAX
0º - 8º
0.26 - 0.46
0.275 - 0.575
NOTES:
1
DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
2
DOES NOT INCLUDE INTER-LEAD FLASH OR PROTRUSIONS.
3.
DIE IS FACING UP FOR MOLDING. DIE IS FACING DOWN FOR TRIM/FORM.
4
ALL SPECIFICATION COMPLY TO JEDEC SPEC MO-203 AA
5.
CONTROLLING DIMENSIONS IN MILIMITERS.
6.
ALL SPECIFICATIONS REFER TO JEDEC MO-203 AA
7.
LEAD SPAN/STAND OFF HEIGHT/COPLANARITY ARE CONSIDERED AS SPECIAL CHARACTERISTIC
Information furnished by Touchstone Semiconductor is believed to be accurate and reliable. However, Touchstone Semiconductor does not
assume any responsibility for its use nor for any infringements of patents or other rights of third parties that may result from its use, and all
information provided by Touchstone Semiconductor and its suppliers is provided on an AS IS basis, WITHOUT WARRANTY OF ANY KIND.
Touchstone Semiconductor reserves the right to change product specifications and product descriptions at any time without any advance
notice. No license is granted by implication or otherwise under any patent or patent rights of Touchstone Semiconductor. Touchstone
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applications using Touchstone Semiconductor components. To minimize the risk associated with customer products and applications,
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Touchstone Semiconductor, Inc.
630 Alder Drive, Milpitas, CA 95035
+1 (408) 215 - 1220 ▪ www.touchstonesemi.com
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