TSB1184 Low Vcesat PNP Transistor TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -40V BVCEO -30V IC -3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) Excellent DC current gain characteristics Part No. TSB1184CP RO Structure ● ● -0.3V @ IC / IB = -2A / -100mA Package Packing TO-252 2.5Kpcs / 13” Reel Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO -30 -6 V V Collector Current Collector Power Dissipation DC Pulse Ta=25ºC -3 -7 (note) 1 IC PD Tc=25ºC Operating Junction Temperature W 5 +150 TJ Operating Junction and Storage Temperature Range Note: Single pulse, Pw=10ms A TSTG - 55 to +150 o C o C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 Conditions BVCBO -40 -- -- V Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC = -1mA, IB = 0 IE = -50uA, IC = 0 BVCEO BVEBO -30 -6 --- --- V V Collector Cutoff Current Emitter Cutoff Current VCB = -40V, IE = 0 VEB = -4V, IC = 0 ICBO IEBO --- --- -1 -1 uA uA *VCE(SAT) *hFE -120 -0.3 -- -0.5 560 V fT -- 80 -- MHz Cob -- 55 -- pF Collector-Emitter Saturation Voltage DC Current Transfer Ratio IC / IB = -2A / -200mA VCE = -2V, IC = -100mA VCE =-5V, IC=-100mA, Transition Frequency f=30MHz Output Capacitance VCB = -10V, f=1MHz * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% 1/4 Version: A08 TSB1184 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2/4 Version: A08 TSB1184 Low Vcesat PNP Transistor TO-252 Mechanical Drawing TO-252 DIMENSION DIM A A1 MILLIMETERS MIN MAX 2.3BSC 4.6BSC INCHES MIN MAX 0.09BSC 0.18BSC B 6.80 7.20 0.268 0.283 C 5.40 5.60 0.213 0.220 D 6.40 6.65 0.252 0.262 E 2.20 2.40 0.087 0.094 F 0.00 0.20 0.000 0.008 G 5.20 5.40 0.205 0.213 G1 0.75 0.85 0.030 0.033 G2 0.55 0.65 0.022 0.026 H 0.35 0.65 0.014 0.026 I 0.90 1.50 0.035 0.059 J 2.20 2.80 0.087 0.110 K 0.50 1.10 0.020 0.043 L 0.90 1.50 0.035 0.059 M 1.30 1.70 0.051 0.67 ˙ 3/4 Version: A08 TSB1184 Low Vcesat PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A08