TSB772S Low Vcesat PNP Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE(SAT) Ordering Information Features ● ● Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882S Part No. Package TSB772SCT B0 TO-92 TSB772SCT B0G TO-92 TSB772SCT A3 TO-92 TSB772SCT A3G TO-92 Note: “G” denotes for Halogen Free Structure ● ● -0.5V @ IC / IB = -2A / -200mA Epitaxial Planar Type PNP Silicon Transistor Packing 1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current DC -3 IC Pulse Collector Power Dissipation PD Operating Junction Temperature TJ Operating Junction and Storage Temperature Range Note: Single pulse, Pw≤350us, Duty≤2% A -7 (note) TSTG 0.625 W +150 o - 55 to +150 o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 BVCBO -50 -- -- V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 BVCEO -30 -- -- V Emitter-Base Breakdown Voltage IE = -50uA, IC = 0 BVEBO -5 -- -- V Collector Cutoff Current VCB = -30V, IE = 0 ICBO -- -- -1 uA Emitter Cutoff Current VEB = 3V, IC = 0 IEBO -- -- -1 uA Collector-Emitter Saturation Voltage IC / IB = -2A / -200mA *VCE(SAT) -- -0.3 -0.5 V Base-Emitter Saturation Voltage IC / IB = -2A / -200mA *VBE(SAT) -- -1 -2 V DC Current Transfer Ratio VCE = -2V, IC = -1A *hFE 100 -- 500 fT -- 80 -- MHz Cob -- 55 -- pF Transition Frequency VCE =-5V, IC=-100mA, f=100MHz Output Capacitance VCB = -10V, f=1MHz * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% 1/4 Version: F07 TSB772S Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2/4 Version: F07 TSB772S Low Vcesat PNP Transistor TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30(typ) 0.563(typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 3/4 Version: F07 TSB772S Low Vcesat PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: F07