TSC TSC5401CTB0

Preliminary
TSC5401
Very High Voltage NPN Transistor
TO-92
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BVCEO
700V
BVCBO
1500V
IC
VCE(SAT)
Features
1A
1.0V @ IC / IB = 0.5A / 0.1A
Block Diagram
●
Very High Voltage
●
High Speed Switching
Structure
●
Silicon Triple Diffused Type
●
NPN Silicon Transistor
Ordering Information
Part No.
Package
Packing
TSC5401CT B0
TO-92
1Kpcs / Bulk
TSC5401CT B0G
TO-92
1Kpcs / Bulk
TSC5401CT A3
TO-92
2Kpcs / Ammo
TSC5401CT A3G
TO-92
2Kpcs / Ammo
Note: “G” denote for Green Product
Absolute Maximum Rating (Ta = 25ºC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
1500V
V
Collector-Emitter Voltage
VCEO
700V
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
Base Current
DC
IC
Pulse
DC
IB
Pulse
1
2
0.5
1
A
A
Total Power Dissipation
PD
10
W
Operating Junction Temperature
TJ
+150
ºC
TSTG
- 55 to +150
ºC
Operating Junction and Storage Temperature Range
Note: Single Pulse. PW = 300uS, Duty ≤2%
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Version: Preliminary
Preliminary
TSC5401
Very High Voltage NPN Transistor
Electrical Specifications (Ta = 25ºC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC =1mA, IB =0
BVCBO
1500
--
--
V
Collector-Emitter Breakdown Voltage
IC =5mA, IE =0
BVCEO
700
--
--
V
Emitter-Base Breakdown Voltage
IE =1mA, IC =0
BVEBO
7
--
--
V
Collector Cutoff Current
VCE =700V, IB=0
ICEO
--
--
10
uA
Collector Cutoff Current
VCB =1300V, IE =0
ICBO
--
--
1
mA
Emitter Cutoff Current
VEB = 7V, IC =0
IEBO
--
--
10
uA
Collector-Emitter Saturation Voltage
IC=0.2A, IB =0.04A
VCE(SAT)1
---
--
0.3
V
Collector-Emitter Saturation Voltage
IC=0.5A, IB =0.1A
VCE(SAT)2
---
--
1.0
V
Base-Emitter Saturation Voltage
IC=0.5A, IB =0.1A
VBE(SAT)
--
--
1.2
V
20
--
45
5
--
2
--
--
0.4
0.8
uS
VCE =5V, IC =10mA
DC Current Gain
VCE =5V, IC = 500mA
hFE
VCE =5V, IC = 1A
Dynamic
Resistive Load Switching Time (Ratings)
Rise Time
VCC =400V, IC =0.5A,
Storage Time
IB1=0.1, IB2=-0.2A,
Fall Time
tP =25uS
tr
tSTG
--
1.5
3
uS
tf
--
0.25
0.4
uS
Note: pulse test: pulse width ≤300uS, duty cycle ≤2%
2/4
Version: Preliminary
Preliminary
TSC5401
Very High Voltage NPN Transistor
TO-92 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
3/4
TO-92 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
4.30
4.70
0.169
0.185
4.30
4.70
0.169
0.185
13.53 (typ)
0.532 (typ)
0.39
0.49
0.015
0.019
1.18
1.28
0.046
0.050
3.30
3.70
0.130
0.146
1.27
1.31
0.050
0.051
0.33
0.43
0.013
0.017
Version: Preliminary
Preliminary
TSC5401
Very High Voltage NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
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Version: Preliminary