JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13003 TO-220 TRANSISTOR ( NPN ) FEATURES 1. BASE · power switching applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Parameter Symbol Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Dissipation 2 W TJ, Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol 123 unless Test otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1000uA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA, 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, 9 V IB=0 IC=0 Collector cut-off current ICBO VCB= 700V , IE=0 1000 µA Collector cut-off current ICEO VCE= 400V, 500 µA Emitter cut-off current IEBO VEB= 9 V, 1000 µA B=0 IC=0 hFE（1） VCE= 5 V, IC= 0.5 A 8 hFE（2） VCE= 5 V, IC= 1.5A 5 Collector-emitter saturation voltage VCE(sat) IC=1000mA,IB= 250 mA 1 V Base-emitter saturation voltage VBE(sat) IC=1000mA, IB= 250mA 1.2 V Base-emitter voltage VBE IE= 2000 mA 3 V Transition frequency fT Fall time tf IC=1A, Storage time ts VCC=100V 40 DC current gain CLASSIFICATION OF VCE=10V,Ic=100mA 5 f =1MHz MHz IB1=-IB2=0.2A 0.5 µs 2.5 µs hFE (1) Rank Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40 Typical Characteristics 3DD13003