TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY VDS (V) RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 800 21.6 @ VGS =10V ID (A) 0.15 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Block Diagram Features ● ● ● ● RDS(ON)=18Ω(Typ.) @ VGS=10V, ID=0.15A Low gate charge @ 5nC (Typ.) Low Crss @ 2.7pF (Typ.) Fast switching Ordering Information Part No. Package Packing TSM1N80SCT B0 TO-92 1Kpcs / Bulk TSM1N80SCT A3 TO-92 2Kpcs / Ammo TSM1N80CW RP SOT-223 2.5kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current, Repetitive or Not-Repetitive (Note 1) TO-92 o Total Power Dissipation @TC = 25 C SOT-223 Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case) Symbol Limit Unit VDS VGS ID IDM EAS IAR V V A A mJ A TJ, TSTG TL 800 ±30 0.3 1 90 1 3 2.1 -55 to +150 10 Symbol Limit Unit RӨJA 130 60 PDTOT W o C S Thermal Performance Parameter Thermal Resistance - Junction to Ambient TO-92 SOT-223 o C/W Notes: Surface mounted on FR4 board t ≤ 10sec 1/9 Version: A10 TSM1N80 800V N-Channel MOSFET Electrical Specifications (Ta=25oC, unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 1mA BVDSS 800 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 0.15A RDS(ON) -- 18 21.6 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 3 -- 5 V Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V IDSS -- -- 25 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±10 uA Forward Transconductance VDS =40V, ID = 0.1A gfs -- 0.36 -- S Diode Forward Voltage IS = 0.2A, VGS = 0V VSD -- -- 1.4 V Qg -- 5 6 Qgs -- 1 -- Qgd -- 2 -- Ciss -- 155 200 Coss -- 20 26 Crss -- 2.7 4 td(on) -- 10 30 Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 640V, ID = 0.3A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 0.3A, tr -- 20 50 Turn-Off Delay Time VDS = 400V, RG = 25Ω td(off) -- 16 45 Turn-Off Fall Time tf Note 1: Pulse test: pulse width <=300uS, duty cycle <=2% Note 2: (VDD = 50V, IAS=0.8A, L=170mH, RG=25Ω) Note 3: For design reference only, not subject to production testing. Note 4: Switching time is essentially independent of operating temperature. -- 25 60 2/9 nS Version: A10 TSM1N80 800V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/9 Version: A10 TSM1N80 800V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/9 Version: A10 TSM1N80 800V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 5/9 Version: A10 TSM1N80 800V N-Channel MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 6/9 Version: A10 TSM1N80 800V N-Channel MOSFET TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/9 Version: A10 TSM1N80 800V N-Channel MOSFET SOT-223 Mechanical Drawing DIM A B C D E F G H I J K SOT-223 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.350 6.850 0.250 0.270 2.900 3.100 0.114 0.122 3.450 3.750 0.136 0.148 0.595 0.635 0.023 0.025 4.550 4.650 0.179 0.183 2.250 2.350 0.088 0.093 0.835 1.035 0.032 0.041 6.700 7.300 0.263 0.287 0.250 0.355 0.010 0.014 10° 16° 10° 16° 1.550 1.800 0.061 0.071 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 8/9 Version: A10 TSM1N80 800V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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