TSM2N60S 600V N-Channel Power MOSFET SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Block Diagram Features ● Robust high voltage termination ● Avalanche energy specified ● Diode is characterized for use in bridge circuits ● Source to Drain diode recovery time comparable to a discrete fast recovery diode. Ordering Information Part No. Package Packing SOT-223 2.5Kpcs / 13” Reel TSM2N60SCW RP N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 0.6 A Pulsed Drain Current IDM 1.5 A IS 1 A dv/dt 50 V/ns PDTOT 2.5 W TJ +150 ºC TJ, TSTG -55 to +150 ºC Symbol Limit Unit RӨJC 15 ºC/W RӨJA 55.8 ºC/W Continuous Source Current (Diode Conduction) o Drain Source Voltage Slope (VDS = 480V, ID=0.8A, TJ = 125 C) o Total Maximum Power Dissipation @Ta = 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec 1/1 Version: A09 TSM2N60S 600V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0V, ID =250uA BVDSS 600 -- -- V Drain-Source On-State Resistance VGS =10V, ID =0.6A RDS(ON) -- 3.6 5 Ω Gate Threshold Voltage VDS =VGS, ID =250uA VGS(TH) 2 -- 4 V Zero Gate Voltage Drain Current VDS =600V, VGS =0V IDSS -- -- 1 uA Gate Body Leakage VGS =±30V, VDS =0V IGSS -- -- ±100 nA Forward Transconductance VDS =10V, ID =0.2A gfs -- 0.8 -- S Diode Forward Voltage IS =0.6A, VGS =0V VSD -- 0.85 1.15 V Qg -- 13 -- Qgs -- 2 -- Qgd -- 6 -- Ciss -- 435 -- Coss -- 56 -- Crss -- 9.2 -- td(on) -- 12 -- Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS =400V, ID =0.6A, VGS = 10V VDS =25V, VGS =0V, f =1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VGS =10V, ID =0.6A, tr -- 21 -- Turn-Off Delay Time VDD =300V, RG =18Ω td(off) -- 30 -- -- 24 -- Turn-Off Fall Time tf Notes: a. Pulse test: pulse width <=300uS, duty cycle <=2% b. For design reference only, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/2 nS Version: A09 TSM2N60S 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/3 Version: A09 TSM2N60S 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/4 Version: A09 TSM2N60S 600V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 5/5 Version: A09 TSM2N60S 600V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 6/6 Version: A09 TSM2N60S 600V N-Channel Power MOSFET SOT-223 Mechanical Drawing DIM A B C D E F G H I J K SOT-223 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.350 6.850 0.250 0.270 2.900 3.100 0.114 0.122 3.450 3.750 0.136 0.148 0.595 0.635 0.023 0.025 4.550 4.650 0.179 0.183 2.250 2.350 0.088 0.093 0.835 1.035 0.032 0.041 6.700 7.300 0.263 0.287 0.250 0.355 0.010 0.014 10° 16° 10° 16° 1.550 1.800 0.061 0.071 Marking Diagram Y M L = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Lot Code 7/7 Version: A09 TSM2N60S 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8/8 Version: A09