TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 PRODUCT SUMMARY Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain VDS (V) 20 Features ● RDS(on)(mΩ) ID (A) 25 @ VGS = 4.5V 5 30 @ VGS = 2.5V 4 65 @ VGS = 1.8V 2 Block Diagram Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance ● Low Profile 0.75mm (typ.) ● ESD Protect 2KV Application ● Specially Designed for Li-on Battery Packs ● Battery Switch Application Ordering Information Part No. Package TSM802CQ RV TDFN 3x3 TSM802CQ RVG TDFN 3x3 TSM802CQ RK TDFN 3x3 TSM802CQ RKG TDFN 3x3 Note: “G” denotes for Halogen Free Packing N-Channel MOSFET 3Kpcs / 7” Reel 3Kpcs / 7” Reel 10Kpcs / 13” Reel 10Kpcs / 13” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage Continuous Drain Current VGS ID ±12 6 V A Pulsed Drain Current a,b Continuous Source Current (Diode Conduction) IDM IS 30 1.4 A A PD 3.1 1.6 W TJ TJ, TSTG +150 -55 to +150 Symbol Limit o Maximum Power Dissipation Ta = 25 C o Ta = 75 C Operating Junction Temperature Operating Junction and Storage Temperature Range o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) RθJC RθJA 4.5 48 Unit o o C/W C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on 1”x1” FR4 Board, t ≤ 10 sec. c. Pulse limited <5s @ ID=10A / VGS=10V 1/6 Version: D08 TSM802 20V N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.6 0.8 1.0 V Gate Body Leakage VGS = ±12V, VDS = 0V IGSS -- -- ±10 uA Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V IDSS -- -- 1.0 uA On-State Drain Current VDS =5V, VGS = 4.5V ID(ON) 30 -- -- A -- 18 25 -- 24 30 -- 39 65 VGS = 4.5V, ID = 5A Drain-Source On-State Resistance VGS = 2.5V, ID = 4A RDS(ON) VGS = 1.8V, ID = 2A mΩ Forward Transconductance VDS = 10V, ID = 4.5A gfs -- 30 -- S Diode Forward Voltage IS = 2A, VGS = 0V VSD -- 0.6 1.2 V Qg -- 15 20 Qgs -- 3.4 -- Qgd -- 1.2 -- Ciss -- 950 -- Coss -- 450 -- Crss -- 135 -- td(on) -- 140 200 tr -- 210 250 td(off) -- 3700 4800 -- 2000 2600 Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 10V, ID = 4.5A, VGS = 4.5V VDS = 10V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW 300µS, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 nS Version: D08 TSM802 20V N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: D08 TSM802 20V N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: D08 TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 Mechanical Drawing DIM A A1 A3 b D D1 E E2 e K L H TDFN 3x3 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.65 0.85 0.026 0.034 0.00 0.05 0.000 0.002 0.15 0.25 0.006 0.010 0.20 0.30 0.008 0.012 2.90 3.10 0.114 0.122 2.20 2.30 0.086 0.090 2.90 3.10 0.114 0.122 1.49 1.59 0.058 0.063 0.625 0.675 0.025 0.027 0.25 0.35 0.010 0.014 0.35 0.45 0.014 0.017 0.61 0.71 0.024 0.028 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: D08 TSM802 20V N-Channel MOSFET w/ESD Protected Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: D08