U2896B Modulation PLL for GSM, DCS and PCS Systems Description The U2896B is a monolithic integrated circuit. It is realized using TEMIC’s advanced silicon bipolar UHF5S technology. The device integrates a mixer, an I/Q modulator, a phase-frequency detector (PFD) with two synchronous programmable dividers, and a charge pump. The U2896B is designed for cellular phones such as GSM900, DCS1800, and PCS1900, applying a transmitter architecture at which the VCO operates at the TX output frequency. No duplexer is needed since the out-of-band noise is very low. The U2896B exhibits low power consumption. Broadband operation gives high flexibility for multi-band frequency mappings. The IC is available in a shrinked small-outline 36-pin package (SSO36). Features Benefits D Supply voltage range 2.7 V to 5.5 V D D D D D D Electrostatic sensitive device. Observe precautions for handling. D Current consumption 50 mA D Power-down functions D High-speed PFD and charge pump (CP) D Small CP saturation voltages (0.5/0.6 V) D Programmable dividers and CP polarity Novel TX architecture saves filter costs Extended battery operating time without duplexer Less board space (few external components) VCO control without voltage doubler Small SSO36 package One device for all GSM bands D Low-current standby mode Block Diagram VS1 GND1 I NI 6 5 1 2 36 NMDO PU 35 NMIXOMIXO PUMIX MIXLO 23 33 34 32 25 LO MDLO 3 NMDLO 4 MDO Q NQ Mixer VRef 90° 24 31 7 29 28 8 Modulator 30 N 10 22 ND 21 NND VS3 RF NRF GND3 VSP 1:2 MUX 15 RD NMIXLO Charge pump PFD 11 CPO R 16 1:2 NRD 12 GNDP Mode control 17 MC 27 26 VS2 GND2 13 CPCL 14 CPCH 14891 Figure 1. Block diagram Rev. A1, 18-Sep-98 1 (13) Preliminary Information U2896B Ordering Information Extended Type Number U2896B-MFCG3 Package SSO36 Pin Description I 1 36 Q NI 2 35 NQ MDLO 3 34 PUMIX NMDLO 4 33 MIXO GND1 5 32 NMIXO VSI 1) 6 31 VS3 1) MDO 7 30 GND3 NMDO 8 29 RF SUB 9 28 NRF VSP 10 27 VS2 1) CPO 11 26 GND2 GNDP 12 25 MIXLO CPCL 13 24 NMIXLO CPCH 14 23 PU RD 15 22 ND NRD 16 21 NND MC 17 20 n.c. n.c. 18 19 n.c. 14892 Figure 2. Pinning Remarks Taped and reeled ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 1) Symbol I NI MDLO NMDLO GND1 VS1 1) MDO NMDO SUB VSP CPO GNDP CPCL Function In-phase base band-input Complementary to I I/Q-modulator LO input Complementary to MDLO Ground Supply I/Q modulator I/Q modulator Complementary to MDO Substrate, connected to GND Supply charge pump Charge pump output Ground Charge pump current control GSM1800 CPCH Charge pump current control GSM900 RD R-divider input NRD Complementary to RD MC Mode control n.c. Not connected n.c. Not connected n.c. Not connected NND Complementary to ND ND N-divider input PU Power-up. whole chip, except mixer NMIXLO Complementary to MIXLO MIXLO Mixer LO input GND2 Ground 1) VS2 Supply (MISC) NRF Complementary to RF RF Mixer RF input GND3 Ground VS3 1) Supply mixer NMIXO Complementary to MIXO MIXO Mixer output PUMIX Power-up mixer NQ Complementary to Q Q Quad-phase base-band input Between the Pins VS1, VS2 and VS3 the allowed maximum voltage is ≤ 200 mV 2 (13) Rev. A1, 18-Sep-98 Preliminary Information U2896B Absolute Maximum Ratings ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ v ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁ ÁÁÁÁÁ v v ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ Parameters Supply voltage VS1, VS2, VS3 Supply voltage charge pump VSP Voltage at any input Current at any input / output pin except CPC CPC output currents Ambient temperature Storage temperature Symbol VVS# VVSP VVi# | II# | | IO# | –0.5 | ICPC | Tamb Tstg Value VVSP 5.5 VVi# VVS# +5.5 2 Unit V V V mA 5 –20 to +85 –40 to +125 mA °C °C Operating Range ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ Thermal Resistance ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ Electrical Characteristics Parameters Supply voltage Supply voltage Ambient temperature Symbol VVS# VVSP Tamb Value 2.7 to 5.5 2.7 to 5.5 –20 to +85 Unit V V °C Parameters Junction ambient SSO36 Symbol RthJA Value 130 Unit K/W VS = 2.7 to 5.5 V, Tamb = –20°C to +85°C, final test at 25°C ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ m ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ Á ÁÁÁ ÁÁ Á ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ m ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ m ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ m ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ Á ÁÁ Á ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ W ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ W ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ W ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ W ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ Parameters DC supply Supply voltages VS# Supply voltage VSP Supply pp y current IVS1 Test Conditions / Pin VVS1 = VVS2 = VVS3 Active (VPU = VS) Standby (VPU = 0) Supply pp y current IVS2 Active (VPU = VS) Standby (VPU = 0) Supply pp y current IVS3 Active (VPUMIX = VS) Standby (VPUMIX = 0) Supply current IVSP 1) Active (VPU = VS, CPO open) Standby (VPU = 0) N & R divider inputs ND, NND & RD, NRD N:1 divider frequency 50- source R:1 divider frequency 50- source Input impedance Active & standby Input sensitivity 50- source Input capacitance Active & standby 1) 2) Symbol Min. VVS# VVSP IVS1A IVS1Y IVS2A IVS2Y IVS3A IVS3Y IVSPA 2.7 VVS# – 0.3 17 17 13 1.4 IVSPY fND fRD ZRD, ZND VRD, VND CRD, CND Typ. 100 100 1 5 2) Max. Unit 5.5 5.5 22 20 22 20 17 30 1.8 V V mA A mA A mA A mA 20 A 600 600 MHz MHz k mVrms pF 200 0.5 Mean value, measured with FND = 151 MHz, FRD = 150 MHz, current vs. time, see page 6, figure 3 For optimized noise performance this voltage level may be higher Rev. A1, 18-Sep-98 3 (13) Preliminary Information U2896B Electrical Characteristics (continued) VS = 2.7 to 5.5 V, Tamb = –20°C to +85°C, final test at 25°C ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ W ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ W ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ W Á ÁÁÁÁÁÁ Á ÁÁÁ Á ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ W ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ W ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Parameters Test Conditions / Pin Phase-frequency detector (PFD) PFD operation fND = 600 MHz, N = 2 fRD = 600 MHz, R = 2 Frequency comparison fND = 600 MHz, N = 2 only 4) fRD = 450 MHz, R = 2 I/Q modulator baseband inputs I, NI & Q, NQ DC voltage Referred to GND MD_IQ AC voltage 5) Frequency range Referred to GND AC voltage Differential (preferres) I/Q modulator LO input MDLO MDLO Frequency range Input impedance Active & standby Input level 50- source I/Q modulator outputs MDO, NMDO DC current VMDO, VNMDO = VS Internal pull-up resistor Voltage compliance VMDO, VNMDO = VC MDO output level 615 to VS 6) (differential) 1.5 pF external load Carrier suppression 6) Sideband suppression 6) IF spurious 6) fLO ± 3 fmod 6) Noise @ 400 kHz off carrier Frequency range Mixer (900 MHz) RF input level 900 MHz Output resistance LO-spurious at @ P9MIXLO = –10 dBm RF/NRF port @ P9RF = –15 dBm MIXLO input level 0.05 to 2 GHz MIXO Frequency range Output level 7) differen- @ P9MIXLO = –15 dBm tial Carrier suppression @ P9MIXLO = –15 dBm 4) 5) 6) 7) Symbol Min. fPFD 50 Typ. fFD VI, VNI, VQ, VNQ 1.35 fIO ACI, ACNI, ACQ, ACNQ ACDI, ACDQ 0 fMDLO ZMDLO PMDLO 100 –14 IMDO, INMDO RMDO, RNMDO VCMDO, VCNMDO VS – 0.7 PMDO 40 CSMDO SSMDO SPMDO NMDO fMDO –32 –35 P9RF RMIXO, RNMIXO SP9RF –23 P9MIXLO fMIXO P9MIXO –22 50 CS9MIXO –20 VS1/2 Max. Unit 300 MHz 400 MHz VS1/2 + 0.1 1 V 200 MHz mVpp 400 mVpp 450 3 –11 –5 0.8 615 –35 –40 –50 100 MHz k dBm mA 5.5 60 V mVrms –45 –115 450 dBc dBc dBc dBc/Hz MHz –17 dBm –40 dBm –12 450 dBm MHz mVrms 650 80 dBc PFD can be used as a frequency comparator until 300 MHz for loop acquisition Single-ended operation (complementary baseband input is AC-grounded) leads to reduced linearity (degrading suppression of odd harmonics) With typical drive levels at MDLO- & I/Q-inputs –1 dB compression point C = 1.5 pF to GND 4 (13) Rev. A1, 18-Sep-98 Preliminary Information U2896B Electrical Characteristics (continued) VS = 2.7 to 5.5 V, Tamb = –20°C to +85°C, final test at 25°C ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ W ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Á ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ D D ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ m ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ m ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ m ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ m ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ m ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ m ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁ m ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Parameters Test Conditions / Pin Symbol Mixer (1900 MHz) Output resistance RMIXO, RNMIXO RF input level 0.5 to 2 GHz P19RF LO-spurious at @ P19MIXLO = –10 dBm SP19RF RF/NRF ports @ P19RF = –15 dBm MIXLO input level 0.05 to 2 GHz P19MIXLO MIXO Output level 8) differen- @ P19MIXLO = –17 dBm P19MIXO tial Carrier suppression @ P19MIXLO = –17 dBm CS19MIXO Charge-pump output CPO (VVSP = 5 V; VCPO = 2.5 V) Pump-current RCPCH 9) = 4.7 kΩ | ICPO_H | p ppulse RCPCL 10) = 2.4 kΩ | ICPO_L | Sensivity to VVSP SICPO I V VSP | CPO | | | I CPO V VSP VCPO voltage range | ICPO | degradation < 10% (VVSP = 2.7 V to 5 V) VCPO Mode control Sink current VMC = VS IMC Power-up input PU (power-up for all functions, except mixer) Settling time Output power within 10% SPU of steady state values High level Active VPUH Low level Standby VPUL High-level current Active, VPUH = 2.2 V IPUH Low-level current Standby, VPUL = 0.4 V IPUL Power-up input PUMIX (power-up for mixer only) Settling time Output power within 10% tsetl of steady state values High level Active VPUMIXH Low level Standby VPUMIXL High-level current Active, VPUMIXH = 2.2 V IPUMIXH Low-level current Standby, IPUMIXL VPUMIXL = 0.4 V 8) 9) 10) Min. Typ. Max. Unit –23 –17 –40 dBm dBm –22 –12 dBm 650 70 mVrms –20 1.4 3 dBc 2 4 0.5 2.6 5 0.1 mA mA – VVSP–0.6 V 60 5 2.0 0 –1 5 2.0 0 0.1 –1 A 10 s 0.4 70 20 V V A A 10 s 0.4 70 20 V V A A – 1 dB compression point C = 1.5 pF to GND RCPCH: external resistor to GND for charge-pump current control (MODE 1, 5, only Pin 14 active) RCPCL: external resistor to GND for charge-pump current control (MODE 2, 3, 4, only Pin 13 active) Rev. A1, 18-Sep-98 5 (13) Preliminary Information U2896B Supply Current of the Charge Pump IVSP vs. Time Due to the pulsed operation of the charge pump, the current into the charge-pump supply pin VSP is not constant. Depending on I (see figure 5) and the phase difference at the phase detector inputs, the current IVSP over time varies. Basically, the total current is the sum of the quiescent current, the charge-/discharge current, and – after each phase comparison cycle – a current spike (see figure 3). Up Down 2.5 ICPCO IVSP 1.5 I CPCO I t Internal current |ICPC| vs. RCPC 19.2 kW 9.6 kW 4.8 kW 2.4 kW RCPC ICPCO |ICPCO| 0.5 mA 1 mA 2 mA 4 mA ICPO t –ICPCO 14913 Figure 3. Supply current of the charge pump (typical values) Mode Selection The device can be programmed to different modes via an external resistor RMODE (including short, open) from Pin MC to VS2. The mode is distinguished from specific N-, R-divider ratios, and the polarity of the charge-pump selection. Mode Selection Mode 1 2 3 4 5 1) 2) 3) 4) N-Divider R-Divider Resistance between Pin MC and Pin VS2 0 (<50 W) 2.7 kW (±5%) 10 kW (±5%) 47 kW (±5%) ∞ (> MW) 1:1 1:1 1:1 2:1 2:1 1:1 1:1 2:1 2:1 2:1 CPO Current Polarity 4) fn < fR 1) fn > fR 1) sink source source source sink source sink sink sink source Application CPCH active t.b.d. t.b.d. t.b.d. PCN/ PCS 2) GSM 3) x CPCL active x x x x Frequencies referred to PFD input LO frequencies below VCO frequency LO frequencies above VCO frequency Sink current into Pin CPO. Source: current out from Pin CPO. 6 (13) Rev. A1, 18-Sep-98 Preliminary Information U2896B Equivalent Circuits at the IC’s Pins 2 x 615 W VS1 VBias_MDLO MDO NMDO 2230 Ω 2230 Ω I,Q MDLO NI, NQ VRef_input VRef_MDLO VRef_output GND Baseband inputs LO input Output 14893 Figure 4. I/Q modulator 1 kΩ 1 kΩ VBias_RF RF 890 Ω VBias_LO 890 Ω 1.6 kΩ VS3 650 W 650 W 1.6 kΩ NMIXO NRF MIXO MIXLO VRef_RF VRef_LO GND RF input LO output Output 14894 Figure 5. Mixer VSP 4 4 up Ref CPCL down I CPO Ref I VRef n n CPCH n GNDP = Transistor with an emitter area–factor of “n” 14896 Figure 6. Charge pump Rev. A1, 18-Sep-98 7 (13) Preliminary Information U2896B VS2 ND/RD 2 kΩ 2 kΩ 20 kΩ PU, PUMIX NND/NRD VRef_div GND 14899 GND 14897 Figure 7. Dividers Figure 8. Power-up VS2 N–divider Logic C (U) ≅ 0.5 pF @ 2 V R–divider C (U) is a non-linear junction capacitance MUX MC 14900 Figure 10. ESD-protection diodes 2x 60 µA GND 14898 Figure 9. Mode control 8 (13) Rev. A1, 18-Sep-98 Preliminary Information U2896B Application Hints Mode Control Interfacing For some of the baseband ICs it may be necessary to reduce the I/Q voltage swing so that it can be handled by the U2896B. In those cases, the following circuitry can be used. U2896B VS2 R1 I VS2 I R1 Baseband IC U2896B R2 RMode C NI NI Q Q R1 NQ R2 RMode1 U2896B RMode2 MC C a) any single mode MC b) any 2 modes NQ R1 U2896B U2896B 14901 VS2 Figure 11. Interfacing the U2896B to I/Q baseband circuits VS2 RMode Due to a possible current offset in the differential baseband inputs of the U2896B the best values for the carrier suppression of the I/Q modulator can be achieved with voltage driven I/NI-, and Q/NQ-inputs. A value of Rsource = R2/2*RS 1.5 kW should be realized. RS is the sum of R1 (above drawing) and the output resistance of the baseband IC. v MC RMode MC c) any mode & mode 5 36 kΩ or 10 kΩ d) mode 5 & mode 3 or mode 4 14895 Figure 12. Application examples for programming different modes Rev. A1, 18-Sep-98 9 (13) Preliminary Information U2896B Test Circuit V2 450 mVpp V5 450 mVpp R1 V4 1.35V V3 1.35V R12 R2 C1 200MHz –10dBm R11 36 1 R3 C2 2 35 3 34 4 33 5 32 6 31 3V C7 C8 C3 3V 3V C9 7 30 8 29 28 9 C10 900MHz –15dBm C11 U2896B 3V, 5V 27 10 3V C12 C4 11 26 12 25 R4 V7 1.5V 13 24 14 23 15 22 C13 C14 R13 1100MHz –15dBm R5 R6 C5 200.1MHz –15dBm R7 3V R8 R9 R10 C6 16 21 17 20 n.c. n.c. 18 19 n.c. 3V C15 C16 R14 200MHz –15dBm 14903 Figure 13. Test circuit 10 (13) Rev. A1, 18-Sep-98 Preliminary Information U2896B Application Circuit for DCS1800 (1710 – 1785 MHz) R9 R1 36 1 Baseband C12 C1 R3 R2 C2 2nd LO –10dBm C3 2 35 3 34 4 33 5 32 6 31 Baseband R8 R10 3V C4 3V 3V C13 7 30 8 29 C15 28 9 VCO C14 880 to 915MHz 1710 to 1785MHz –20dBm U2896B 3V, 5V 27 10 3V C16 C5 Tuning voltage 11 26 12 25 C6 R4 C7 13 24 14 23 15 22 C17 1st LO –15dBm C18 R5 3V R6 C9 C8 L1 L2 C19 C11 C10 16 21 17 20 n.c. 19 n.c. R7 3V C20 n.c. 18 L3 C29 14904 Figure 14. Application circuit Modulation Spectrum & Phase Error Measurements CPC: 1 kΩ to GND Modulation-Loop Settling Time As valid for all PLL loops the settling time depends on several factors. The following figure is an extraction from measurements performed in an arrangement like the application circuit. It shows that a loop settling time of a few ms can be achieved. CPC ‘open’ Vertical: VCO tuning voltage 1 V/Div Horizontal: Time 1 ms/Div Rev. A1, 18-Sep-98 11 (13) Preliminary Information U2896B Package Information 5.6 5.2 4.5 4.3 Package SSO36 Dimensions in mm 9.6 9.1 1.3 0.12 0.15 0.05 0.2 0.5 6.6 6.3 8.45 36 19 technical drawings according to DIN specifications 13047 1 18 12 (13) Rev. A1, 18-Sep-98 Preliminary Information U2896B Ozone Depleting Substances Policy Statement It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2594, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A1, 18-Sep-98 13 (13) Preliminary Information