TI UCC37322D

 SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
FEATURES
D Industry-Standard Pin-Out With Addition of
D
D
D
D
D
D
D
D
D
VDD
Enable Funtion
High-Peak Current Drive Capability of ±9 A at
the Miller Plateau Region Using TrueDrive
Efficient Constant Current Sourcing Using a
Unique BiPolar & CMOS Output Stage
TTL/CMOS Compatible Inputs Independent
of Supply Voltage
20-ns Typical Rise and Fall Times with 10-nF
Load
Typical Propagation Delay Times of 25 ns
With Input Falling and 35 ns with Input
Rising
4-V to 15-V Supply Voltage
Available in Thermally Enhanced MSOP
PowerPADTM Package With 4.7°C/W θjc
Rated From –40°C to 105°C
Pb-Free Finish (NiPdAu) on SOIC-8 and
PDIP-8 Packages
APPLICATIONS
D Switch Mode Power Supplies
D DC/DC Converters
D Motor Controllers
D Class-D Switching Amplifiers
D Line Drivers
D Pulse Transformer Driver
DESCRIPTION
1
The UCC37321/2 family of high-speed drivers
deliver 9 A of peak drive current in an industry
standard pinout. These drivers can drive the
largest of MOSFETs for systems requiring
extreme Miller current due to high dV/dt
transitions. This eliminates additional external
circuits and can replace multiple components to
reduce space, design complexity and assembly
cost. Two standard logic options are offered,
inverting
(UCC37321)
and
noninverting
(UCC37322).
8
VDD
INPUT/OUTPUT TABLE
INVERTING
7
OUT
VDD
IN
ENBL
AGND
2
3
NON−
INVERTING
6
INVERTING
UCC37321
OUT
NON−
INVERTING
UCC37322
RENBL
100 kΩ
4
5
ENBL
IN
OUT
0
0
0
1
0
0
1
0
1
1
1
0
0
0
0
0
1
0
1
0
0
1
1
1
PGND
UDG−01112
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPADt is trademarks of Texas Instruments Incorporated.
!"#$%! & '("")% $& ! *(+,'$%! -$%).
"!-('%& '!!"# %! &*)''$%!& *)" %/) %)"#& ! )0$& &%"(#)%&
&%$-$"- 1$""$%2. "!-('%! *"!')&&3 -!)& !% )')&&$",2 ',(-)
%)&%3 ! $,, *$"$#)%)"&.
Copyright  2004, Texas Instruments Incorporated
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1
SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
description (continued)
Using a design that inherently minimizes shoot-through current, the outputs of these can provide high gate drive
current where it is most needed at the Miller plateau region during the MOSFET switching transition. A unique
hybrid output stage paralleling bipolar and MOSFET transistors (TrueDrive) allows efficient current delivery at
low supply voltages. With this drive architecture, UCC37321/2/3 can be used in industry standard 6-A, 9-A and
many 12-A driver applications. Latch up and ESD protection circuitries are also included. Finally, the
UCC37321/2 provides an enable (ENBL) function to have better control of the operation of the driver
applications. ENBL is implemented on pin 3 which was previously left unused in the industry standard pin−out.
It is internally pulled up to Vdd for active high logic and can be left open for standard operation.
In addition to SOIC-8 (D) and PDIP-8 (P) package offerings, the UCC37321/2 also comes in the thermally
enhanced but tiny 8-pin MSOP PowerPADt (DGN) package. The PowerPADt package drastically lowers the
thermal resistance to extend the temperature operation range and improve the long-term reliability.
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†}
UCCx732x
UNIT
−0.3 to 16
V
0.6
A
Supply voltage, VDD
Output current (OUT) DC, IOUT_DC
Input voltage (IN), VIN
−5 V to 6 V or VDD+0.3
(whichever is larger)
Enable voltage (ENBL)
−0.3 V to 6 V or VDD+0.3
(whichever is larger)
V
Power dissipation at TA = 25°C
D package
DGN package
650
mW
3
W
350
mW
Junction operating temperature, TJ
−55 to 150
°C
Storage temperature, Tstg
−65 to 150
°C
300
°C
P package
Lead temperature (soldering, 10 sec.)
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
‡ All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal.
ordering information
OUTPUT
CONFIGURATION
Inverting
NonInverting
PACKAGED DEVICES
TEMPERATURE
RANGE TA = TJ
SOIC-8 (D)
MSOP-8 PowerPAD
(DGN)
PDIP-8 (P)
−40°C to +105°C
UCC27321D
UCC27321DGN
UCC27321P
0°C to +70°C
UCC37321D
UCC37321DGN
UCC37321P
−40°C to +105°C
UCC27322D
UCC27322DGN
UCC27322P
0°C to +70°C
UCC37322D
UCC37322DGN
UCC37322P
† D (SOIC−8) and DGN (PowerPAD−MSOP) packages are available taped and reeled. Add R suffix to device type (e.g.
UCC37321DR, UCC37322DGNR) to order quantities of 2,500 devices per reel.
2
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SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
electrical characteristics, VDD = 4.5 V to 15 V, TA = −40°C to 105°C for UCC2732x, TA = 0°C to 70°C
for UCC3732x, TA = TJ, (unless otherwise noted)
input (IN)
PARAMETER
TEST CONDITION
VIN_H, logic 1 input threshold
MIN
TYP
MAX
2
V
VIN_L, logic 0 input threshold
0 V ≤ VIN ≤ VDD
Input current
UNITS
1
V
−10
0
10
µA
MIN
TYP
MAX
UNITS
output (OUT)
PARAMETER
TEST CONDITION
Peak output current(1)(2)
VOH, output high level
VDD = 14 V,
VOH = VDD – VOUT, IOUT = −10 mA
VOL, output high level
IOUT = 10 mA
Output resistance high(3)
Output resistance low(3)
IOUT = −10 mA,
VDD = 14 V
IOUT = 10 mA,
VDD = 14 V
latch−up protection(1)
9
A
150
300
mV
11
25
mV
15
25
Ω
1.1
2.5
500
Ω
mA
overall
PARAMETER
TEST CONDITION
IN = LO, EN = LO,
UCC37321
UCC27321
IN = HI,
IN = HI,
IDD, static operating current
EN = LO,
IN = LO, EN = HI,
EN = HI,
IN = LO, EN = LO,
UCC37322
UCC27322
IN = HI,
EN = LO,
IN = LO, EN = HI,
IN = HI,
EN = HI,
TYP
MAX
VDD = 15 V
VDD = 15 V
MIN
150
225
440
650
VDD = 15 V
VDD = 15 V
370
550
370
550
VDD = 15 V
VDD = 15 V
150
225
450
650
VDD = 15 V
VDD = 15 V
UNITS
µA
A
75
125
675
1000
MIN
TYP
MAX
UNITS
1.7
2.2
2.7
V
enable (ENBL)
PARAMETER
VIN_H, high-level input voltage
VIN_L, low-level input voltage
TEST CONDITION
LO to HI transition
HI to LO transition
Hysteresis
RENBL, enable impedance
tD3, propagation delay time(5)
tD4, propagation delay time(5)
VDD = 14 V,
CLOAD = 10 nF
ENBL = GND
CLOAD = 10 nF
1.1
1.6
2.0
0.25
0.55
0.90
75
100
135
60
90
60
90
V
kΩ
ns
NOTES: 1. Ensured by design. Not tested in production.
2. The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors.
3. The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the RDS(ON) of
the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
5. See Figure 2.
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3
SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
electrical characteristics, VDD = 4.5 V to 15 V, TA = −40°C to 105°C for UCC2732x, TA = 0°C to 70°C
for UCC3732x, TA = TJ, (unless otherwise noted) (continued)
switching time (4)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
tR, rise time (OUT)
CLOAD = 10 nF
20
70
tF, fall time (OUT)
CLOAD = 10 nF
20
30
tD1, propagation delay, IN rising (IN to OUT)
CLOAD = 10 nF
25
70
tD2, propagation delay, IN falling (IN to OUT)
CLOAD = 10 nF
35
70
UNITS
ns
NOTES: 4. See Figure 1 for switching waveforms.
(a)
(b)
5V
IN
VTH
0V
tD1
VTH
IN
VTH
tD2
VTH
tD1
tD2
tF
VDD
80%
80%
80%
tR
OUT
80%
tR
OUT
20%
tF
20%
0V
Figure 1. Switching Waveforms for (a) Inverting Input to (b) Output Times(6)
5V
ENBL
VIN_L
VIN_H
0V
tD3
tD4
VDD
80%
80%
tR
OUT
tF
20%
0V
Figure 2. Switching Waveform for Enable to Output(6)
NOTES: 6. The 20% and 80% thresholds depict the dynamics of the BiPolar output devices that dominate the power MOSFET transition through
the Miller regions of operation.
4
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SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
pin configurations
PDIP (P) PACKAGE
(TOP VIEW)
VDD
IN
ENBL
AGND
1
8
2
7
3
6
4
5
SOIC (D) OR MSOP (DGN) PACKAGE
(TOP VIEW)
VDD
OUT
OUT
PGND
VDD
IN
ENBL
AGND
1
8
2
7
3
6
4
5
VDD
OUT
OUT
PGND
power dissipation rating table
PACKAGE
SUFFIX
θjc (5C/W)
θja (5C/W)
Power Rating
(mW)
TA = 705C †
Derating Factor
Above
705C (mW/5C) †
SOIC-8
D
42
84 – 160 }
344−655 }
6.25 − 11.9 }
PDIP-8
P
49
110
500
9
MSOP PowerPAD-8
DGN
4.7
50−59
1370
17.1
† 125°C operating junction temperature is used for power rating calculations
‡ The range of values indicates the effect of pc−board. These values are intended to give the system designer an indication
of the best and worst case conditions. In general, the system designer should attempt to use larger traces on the pc−board
where possible in order to spread the heat away form the device more effectively. For additional information on device
temperature management, please refer to Packaging Information section of the Power Supply Control Products Data
Book, (Ti Literature Number SLUD003).
terminal functions
TERMINAL
FUNCTION
NO.
NAME
I/O
4
AGND
−
Common ground for input stage. This ground should be connected very closely to the
source of the power MOSFET which the driver is driving. Grounds are separated to minimize ringing affects due to output switching di/dt which can affect the input threshold.
3
ENBL
I
Enable input for the driver with logic compatible threshold and hysteresis. The driver output
can be enabled and disabled with this pin. It is internally pulled up to VDD with 100-kΩ
resistor for active high operation. The output state when the device is disabled will be low
regardless of the input state.
2
IN
I
Input signal of the driver which has logic compatible threshold and hysteresis.
6, 7
OUT
O
Driver outputs that must be connected together externally. The output stage is capable of
providing 9-A peak drive current to the gate of a power MOSFET.
5
PGND
−
Common ground for output stage. This ground should be connected very closely to the
source of the power MOSFET which the driver is driving. Grounds are separated to minimize ringing affects due to output switching di/dt which can affect the input threshold.
1, 8
VDD
I
Supply voltage and the power input connections for this device. Three pins must be connected together externally.
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SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
APPLICATION INFORMATION
general information
The UCC37321 and UCC37322 drivers serve as an interface between low-power controllers and power
MOSFETs. They can also be used as an interface between DSPs and power MOSFETs. High-frequency power
supplies often require high-speed, high-current drivers such as the UCC37321/2 family. A leading application
is the need to provide a high power buffer stage between the PWM output of the control device and the gates
of the primary power MOSFET or IGBT switching devices. In other cases, the device drives the power device
gates through a drive transformer. Synchronous rectification supplies also have the need to simultaneously
drive multiple devices which can present an extremely large load to the control circuitry.
The inverting driver (UCC37321) is useful for generating inverted gate drive signals from controllers that have
only outputs of the opposite polarity. For example, this driver can provide a gate signal for ground referenced,
N-channel synchronous rectifier MOSFETs in buck derived converters. This driver can also be used for
generating a gate drive signal for a P-channel MOSFET from a controller that is designed for N-channel
applications.
MOSFET gate drivers are generally used when it is not feasible to have the primary PWM regulator device
directly drive the switching devices for one or more reasons. The PWM device may not have the brute drive
capability required for the intended switching MOSFET, limiting the switching performance in the application.
In other cases there may be a desire to minimize the effect of high frequency switching noise by placing the high
current driver physically close to the load. Also, newer devices that target the highest operating frequencies may
not incorporate onboard gate drivers at all. Their PWM outputs are only intended to drive the high impedance
input to a driver such as the UCC37321/2. Finally, the control device may be under thermal stress due to power
dissipation, and an external driver can help by moving the heat from the controller to an external package.
input stage
The IN threshold has a 3.3-V logic sensitivity over the full range of VDD voltages; yet, it is equally compatible
with 0 V to VDD signals. The inputs of UCC37321/2 family of drivers are designed to withstand 500-mA reverse
current without either damage to the device or logic upset. In addition, the input threshold turn-off of the
UCC37321/2 has been slightly raised for improved noise immunity. The input stage of each driver should be
driven by a signal with a short rise or fall time. This condition is satisfied in typical power supply applications,
where the input signals are provided by a PWM controller or logic gates with fast transition times (<200 ns). The
IN input of the driver functions as a digital gate, and it is not intended for applications where a slow changing
input voltage is used to generate a switching output when the logic threshold of the input section is reached.
While this may not be harmful to the driver, the output of the driver may switch repeatedly at a high frequency.
Users should not attempt to shape the input signals to the driver in an attempt to slow down (or delay) the signal
at the output. If limiting the rise or fall times to the power device is desired, then an external resistance can be
added between the output of the driver and the load device, which is generally a power MOSFET gate. The
external resistor may also help remove power dissipation from the device package, as discussed in the section
on Thermal Considerations.
6
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SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
APPLICATION INFORMATION
output stage
The TrueDrive output stage is capable of supplying ±9-A peak current pulses and swings to both VDD and GND
and can encourage even the most stubborn MOSFETs to switch. The pull-up/pull-down circuits of the driver are
constructed of bipolar and MOSFET transistors in parallel. The peak output current rating is the combined
current from the bipolar and MOSFET transistors. The output resistance is the RDS(ON) of the MOSFET
transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor. Each
output stage also provides a very low impedance to overshoot and undershoot due to the body diode of the
internal MOSFET. This means that in many cases, external-schottky-clamp diodes are not required.
This unique BiPolar and MOSFET hybrid output architecture (TrueDrive) allows efficient current sourcing at low
supply voltages. The UCC37321/2 family delivers 9 A of gate drive where it is most needed during the MOSFET
switching transition – at the Miller plateau region – providing improved efficiency gains.
source/sink capabilities during miller plateau
Large power MOSFETs present a significant load to the control circuitry. Proper drive is required for efficient,
reliable operation. The UCC37321/2 drivers have been optimized to provide maximum drive to a power
MOSFET during the Miller Plateau Region of the switching transition. This interval occurs while the drain voltage
is swinging between the voltage levels dictated by the power topology, requiring the charging/discharging of the
drain-gate capacitance with current supplied or removed by the driver device. [1]
Two circuits are used to test the current capabilities of the UCC37321/2 driver. In each case external circuitry
is added to clamp the output near 5 V while the device is sinking or sourcing current. An input pulse of 250 ns
is applied at a frequency of 1 kHz in the proper polarity for the respective test. In each test there is a transient
period where the current peaked up and then settled down to a steady-state value. The noted current
measurements are made at a time of 200 ns after the input pulse is applied, after the initial transient.
The circuit in Figure 3 is used to verify the current sink capability when the output of the driver is clamped around
5 V, a typical value of gate-source voltage during the Miller Plateau Region. The UCC37321 is found to sink 9 A
at VDD = 15 V.
VDD
UCC37321
INPUT
1 VDD
2
VDD 8
OUT
IN
3 ENBL
4 AGND
OUT
DSCHOTTKY
10 Ω
7
C2
1 µF
6
PGND 5
C3
100 µF
+
VSUPPLY
5.5 V
VSNS
1 µF
CER
100 µF
AL EL
RSNS
0.1 Ω
UDG−01113
Figure 3. Sink Current Test Circuit
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SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
APPLICATION INFORMATION
The circuit in Figure 4 is utilized to test the current source capability with the output clamped to around 5 V with
a string of Zener diodes. The UCC37321 is found to source 9 A at VDD = 15 V.
VDD
UCC37321
INPUT
1
2
3
4
VDD
VDD 8
IN
OUT
ENBL
AGND
OUT
DSCHOTTKY
7
C2
1 µF
6
PGND 5
C3
100 µF
4.5 V
DADJ
VSNS
1 µF
CER
100 µF
AL EL
RSNS
0.1 Ω
UDG−01114
Figure 4. Source Current Test Circuit
It should be noted that the current sink capability is slightly stronger than the current source capability at lower
VDD. This is due to the differences in the structure of the bipolar-MOSFET power output section, where the
current source is a P-channel MOSFET and the current sink has an N-channel MOSFET.
In a large majority of applications it is advantageous that the turn-off capability of a driver is stronger than the
turn-on capability. This helps to ensure that the MOSFET is held OFF during common power supply transients
which may turn the device back ON.
operational circuit layout
It can be a significant challenge to avoid the overshoot/undershoot and ringing issues that can arise from circuit
layout. The low impedance of these drivers and their high di/dt can induce ringing between parasitic inductances
and capacitances in the circuit. Utmost care must be used in the circuit layout.
In general, position the driver physically as close to its load as possible. Place a 1-µF bypass capacitor as close
to the output side of the driver as possible, connecting it to pins 1 and 8. Connect a single trace between the
two VDD pins (pin 1 and pin 8); connect a single trace between PGND and AGND (pin 5 and pin 4). If a ground
plane is used, it may be connected to AGND; do not extend the plane beneath the output side of the package
(pins 5 − 8). Connect the load to both OUT pins (pins 7 and 6) with a single trace on the adjacent layer to the
component layer; route the return current path for the output on the component side, directly over the output
path.
Extreme conditions may require decoupling the input power and ground connections from the output power and
ground connections. The UCCx7321/2 has a feature that allows the user to take these extreme measures, if
necessary. There is a small amount of internal impedance of about 15 Ω between the AGND and PGND pins;
there is also a small amount of impedance (∼30 Ω) between the two VDD pins. In order to take advantage of
this feature, connect a 1-µF bypass capacitor between VDD and PGND (pins 5 and 8) and connect a 0.1-µF
bypass capacitor between VDD and AGND (pins 1 and 4). Further decoupling can be achieved by connecting
between the two VDD pins with a jumper that passes through a 40-MHz ferrite bead and connect bias power
only to pin 8. Even more decoupling can be achieved by connecting between AGND and PGND with a pair of
anti-parallel diodes (anode connected to cathode and cathode connected to anode).
8
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SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
APPLICATION INFORMATION
VDD
Although quiescent VDD current is very low, total supply current will be higher, depending on OUTA and OUTB
current and the operating frequency. Total VDD current is the sum of quiescent VDD current and the average
OUT current. Knowing the operating frequency and the MOSFET gate charge (Qg), average OUT current can
be calculated from:
IOUT = Qg x f, where f is frequency
For the best high-speed circuit performance, two VDD bypass capacitors are recommended tp prevent noise
problems. The use of surface mount components is highly recommended. A 0.1-µF ceramic capacitor should
be located closest to the VDD to ground connection. In addition, a larger capacitor (such as 1-µF) with relatively
low ESR should be connected in parallel, to help deliver the high current peaks to the load. The parallel
combination of capacitors should present a low impedance characteristic for the expected current levels in the
driver application.
drive current and power requirements
The UCC37321/2 family of drivers are capable of delivering 9-A of current to a MOSFET gate for a period of
several hundred nanoseconds. High peak current is required to turn an N-channel device ON quickly. Then, to
turn the device OFF, the driver is required to sink a similar amount of current to ground. This repeats at the
operating frequency of the power device. An N-channel MOSFET is used in this discussion because it is the
most common type of switching device used in high frequency power conversion equipment.
References 1 and 2 contain detailed discussions of the drive current required to drive a power MOSFET and
other capacitive−input switching devices. Much information is provided in tabular form to give a range of the
current required for various devices at various frequencies. The information pertinent to calculating gate drive
current requirements will be summarized here; the original document is available from the TI website.
When a driver device is tested with a discrete, capacitive load it is a fairly simple matter to calculate the power
that is required from the bias supply. The energy that must be transferred from the bias supply to charge the
capacitor is given by:
E + 1 CV 2, where C is the load capacitor and V is the bias voltage feeding the driver.
2
There is an equal amount of energy transferred to ground when the capacitor is discharged. This leads to a
power loss given by the following:
P+2
1 CV 2f, where f is the switching frequency.
2
This power is dissipated in the resistive elements of the circuit. Thus, with no external resistor between the driver
and gate, this power is dissipated inside the driver. Half of the total power is dissipated when the capacitor is
charged, and the other half is dissipated when the capacitor is discharged. An actual example using the
conditions of the previous gate drive waveform should help clarify this.
With VDD = 12 V, CLOAD = 10 nF, and f = 300 kHz, the power loss can be calculated as:
P = 10 nF x (12)2 x (300 kHz) = 0.432 W
With a 12-V supply, this would equate to a current of:
I + P + 0.432 W + 0.036 A
V
12 V
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9
SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
APPLICATION INFORMATION
drive current and power requirements (continued)
The switching load presented by a power MOSFET can be converted to an equivalent capacitance by examining
the gate charge required to switch the device. This gate charge includes the effects of the input capacitance
plus the added charge needed to swing the drain of the device between the ON and OFF states. Most
manufacturers provide specifications that provide the typical and maximum gate charge, in nC, to switch the
device under specified conditions. Using the gate charge Qg, one can determine the power that must be
dissipated when charging a capacitor. This is done by using the equivalence Qg = CeffV to provide the following
equation for power:
P+C
V2
f + Qg
V
f
This equation allows a power designer to calculate the bias power required to drive a specific MOSFET gate
at a specific bias voltage.
enable
UCC37321/2 provides an Enable input for improved control of the driver operation. This input also incorporates
logic compatible thresholds with hysteresis. It is internally pulled up to VDD with 100-kΩ resistor for active high
operation. When ENBL is high, the device is enabled and when ENBL is low, the device is disabled. The default
state of the ENBL pin is to enable the device and therefore can be left open for standard operation. The output
state when the device is disabled is low regardless of the input state. See the truth table below for the operation
using enable logic.
ENBL input is compatible with both logic signals and slow changing analog signals. It can be directly driven or
a power−up delay can be programmed with a capacitor between ENBL and AGND.
Table 1. Input/Ouput Table
INVERTING
UCC37321
NON−
INVERTING
UCC37322
10
ENBL
IN
OUT
0
0
0
1
0
0
1
0
1
1
1
0
0
0
0
0
1
0
1
0
0
1
1
1
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SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
THERMAL INFORMATION
The useful range of a driver is greatly affected by the drive power requirements of the load and the thermal
characteristics of the device package. In order for a power driver to be useful over a particular temperature range
the package must allow for the efficient removal of the heat produced while keeping the junction temperature
within rated limits. The UCC37321/2 family of drivers is available in three different packages to cover a range
of application requirements.
As shown in the power dissipation rating table, the SOIC-8 (D) and PDIP-8 (P) packages each have a power
rating of around 0.5 W with TA = 70°C. This limit is imposed in conjunction with the power derating factor also
given in the table. Note that the power dissipation in our earlier example is 0.432 W with a 10-nF load, 12 VDD,
switched at 300 kHz. Thus, only one load of this size could be driven using the D or P packag. The difficulties
with heat removal limit the drive available in the D or P packages.
The MSOP PowerPAD-8 (DGN) package significantly relieves this concern by offering an effective means of
removing the heat from the semiconductor junction. As illustrated in Reference 3, the PowerPAD packages offer
a leadframe die pad that is exposed at the base of the package. This pad is soldered to the copper on the PC
board directly underneath the device package, reducing the θjc down to 4.7°C/W. Data is presented in
Reference 3 to show that the power dissipation can be quadrupled in the PowerPAD configuration when
compared to the standard packages. The PC board must be designed with thermal lands and thermal vias to
complete the heat removal subsystem, as summarized in Reference 4. This allows a significant improvement
in heatsinking over that available in the D or P packages, and is shown to more than double the power capability
of the D and P packages.
Note that the PowerPADt is not directly connected to any leads of the package. However, it is electrically and
thermally connected to the substrate which is the ground of the device.
references
1. SEM-1400, Topic 2, A Design and Application Guide for High Speed Power MOSFET Gate Drive Circuits,
TI Literature No. SLUP133
2. U−137, Practical Considerations in High Performance MOSFET, IGBT and MCT Gate Drive Circuits, by Bill
Andreycak, TI Literature No. SLUA105
3. Technical Brief, PowerPad Thermally Enhanced Package, TI Literature No. SLMA002
4. Application Brief, PowerPAD Made Easy, TI Literature No. SLMA004
related products
PRODUCT
DESCRIPTION
PACKAGES
UCC37323/4/5
Dual 4-A Low-Side Drivers
MSOP−8 PowerPAD, SOIC−8, PDIP−8
UCC27423/4/5
Dual 4-A Low-Side Drivers with Enable
MSOP−8 PowerPAD, SOIC−8, PDIP−8
TPS2811/12/13
Dual 2-A Low-Side Drivers with Internal Regulator
TSSOP−8, SOIC−8, PDIP−8
TPS2814/15
Dual 2-A Low-Side Drivers with Two Inputs per Channel
TSSOP−8, SOIC−8, PDIP−8
TPS2816/17/18/19
Single 2-A Low-Side Driver with Internal Regulator
5-Pin SOT−23
TPS2828/29
Single 2-A Low-Side Driver
5-Pin SOT−23
www.ti.com
11
SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
TYPICAL CHARACTERISTICS
INPUT CURRENT IDLE
vs
SUPPLY VOLTAGE (UCCx7321)
700
700
600
600
ENBL = 0 V
IN = 5 V
500
400
ENBL = VDD
IN = 5 V
300
ENBL = 0 V
IN = 0 V
200
IDD − Input Current Idle − µA
IDD − Input Current Idle − µA
INPUT CURRENT IDLE
vs
SUPPLY VOLTAGE (UCCx7322)
ENBL = 0 V
IN = 5 V
500
400
ENBL = 0 V
IN = 0 V
300
ENBL = VDD
IN = 5 V
200
ENBL = VDD, IN = 0 V
100
100
ENBL = VDD, IN = 0 V
0
0
2
4
6
8
10
12
0
14
16
0
2
4
6
VDD − Supply Voltage − V
800
700
700
600
IDD − Input Current Idle − µA
IDD − Input Current Idle − µA
800
ENBL = HI
IN = LO
ENBL = HI
IN = HI
500
400
ENBL = LO
IN = LO
200
−25
0
25
50
75
TJ −Temperature − °C
100
125
Figure 7
12
14
16
ENBL = HI
IN = HI
600
ENBL = LO
IN = HI
500
400
ENBL = LO
IN = LO
300
ENBL = HI
IN = LO
200
100
100
0
−50
12
INPUT CURRENT IDLE
vs
TEMPERATURE (UCCx7322)
INPUT CURRENT IDLE
vs
TEMPERATURE (UCCx7321)
300
10
Figure 6
Figure 5
ENBL = LO
IN = HI
8
VDD − Supply Voltage − V
0
−50
−25
0
25
50
75
TJ −Temperature − °C
Figure 8
www.ti.com
100
125
SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
TYPICAL CHARACTERISTICS
RISE TIME
vs
SUPPLY VOLTAGE
FALL TIME
vs
SUPPLY VOLTAGE
70
70
CLOAD = 10 nF
60
60
tA = −40°C
50
tF − Fall Time − ns
tR − Rise Time − ns
50
40
tA = 105°C
tA = 25°C
30
20
40
30
tA = 0°C
10
0
4
6
8
10
12
14
tA = 0°C
tA = −40°C
0
16
4
VDD − Supply Voltage − V
Figure 9
6
8
10
12
VDD − Supply Voltage − V
14
16
Figure 10
RISE TIME
vs
LOAD CAPACITANCE
FALL TIME
vs
OUTPUT CAPACITANCE
200
VDD = 5 V
VDD = 5 V
160
VDD = 10 V
tF − Fall Time − ns
30
tR − Rise Time − ns
tA = 25°C
20
10
40
tA = 105°C
VDD = 10 V
VDD = 15 V
20
VDD = 15 V
120
10
80
40
0
0
1
10
100
1
10
CLOAD − Load Capacitance − nF
100
CLOAD − Load Capacitance − nF
Figure 12
Figure 11
www.ti.com
13
SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
TYPICAL CHARACTERISTICS
tD1 DELAY TIME
vs
SUPPLY VOLTAGE
tD2 DELAY TIME
vs
SUPPLY VOLTAGE
70
70
CLOAD = 10 nF
CLOAD = 10 nF
tA = 105°C
60
60
tA = 25°C
50
50
tD2 − Delay Time − ns
tD1 − Delay Time − ns
tA = 105°C
tA = 25°C
40
30
20
40
30
tA = 0°C
20
tA = −40°C
tA = −40°C
10
10
tA = 0°C
0
0
4
6
8
10
12
14
16
4
VDD − Supply Voltage − V
10
12
14
16
Figure 14
tD1 DELAY TIME
vs
LOAD CAPACITANCE
tD2 DELAY TIME
vs
LOAD CAPACITANCE
70
70
VDD = 5 V
60
60
50
VDD = 5 V
tD2 − Delay Time − ns
tD1 − Delay Time − ns
8
VDD − Supply Voltage − V
Figure 13
VDD = 10 V
40
30
20
50
40
30
VDD = 15 V
VDD = 10 V
20
VDD = 15 V
10
10
0
1
10
100
CLOAD − Load Capacitance − nF
Figure 15
14
6
0
1
10
CLOAD − Load Capacitance − nF
Figure 16
www.ti.com
100
SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
TYPICAL CHARACTERISTICS
PROPAGATION TIMES
vs
PEAK INPUT VOLTAGE
45
2.0
VDD = 15 V
CLOAD = 10 nF
TA = 25°C
tD2
40
Propagation Time − ns
tRISE
35
30
25
20
15
10
VON − Input Threshold Voltage − V
50
tFALL
tD1
INPUT THRESHOLD
vs
TEMPERATURE
1.9
VDD = 15 V
1.8
1.7
1.6
1.5
VDD = 10 V
VDD = 4.5 V
1.4
1.3
5
1.2
−50
0
0
5
10
VIN(peak) − Peak Input Voltage − V
15
−25
0
Figure 17
3.0
50
75
100
125
100
125
Figure 18
ENABLE RESISTANCE
vs
TEMPERATURE
ENABLE THRESHOLD AND HYSTERESIS
vs
TEMPERATURE
150
140
ENBL − ON
2.5
RENBL − Enable Resistance − Ω
Enable threshold and hysteresis − V
25
TJ − Temperature − °C
2.0
1.5
1.0
ENBL − OFF
130
120
110
100
90
80
70
0.5
60
ENBL − HYSTERESIS
0
−50
−25
0
25
50
75
TJ − Temperature − °C
100
125
50
−50
−25
0
25
50
75
TJ − Temperature − °C
Figure 19
Figure 20
www.ti.com
15
SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
TYPICAL CHARACTERISTICS
OUTPUT BEHAVIOR
vs
VDD (UCC37321)
OUTPUT BEHAVIOR
vs
VDD (UCC37321)
IN = GND
ENBL = VDD
VDD − Input Voltage − V
1 V/div
VDD − Input Voltage − V
1 V/div
IN = GND
ENBL = VDD
VDD
OUT
OUT
0V
0V
VDD
10 nF Between Output and GND
50 µs/div
10 nF Between Output and GND
50 µs/div
Figure 21
Figure 22
OUTPUT BEHAVIOR
vs
VDD (INVERTING)
OUTPUT BEHAVIOR
vs
VDD (INVERTING)
VDD
OUT
IN = VDD
ENBL = VDD
VDD − Supply Voltage − V
1 V/div
VDD − Supply Voltage − V
1 V/div
IN = VDD
ENBL = VDD
OUT
0V
0V
10 nF Between Output and GND
50 µs/div
10 nF Between Output and GND
50 µs/div
Figure 24
Figure 23
16
VDD
www.ti.com
SLUS504D − SEPTEMBER 2002 − REVISED SEPTEMBER 2007
TYPICAL CHARACTERISTICS
OUTPUT BEHAVIOR
vs
VDD (UCC37322)
OUTPUT BEHAVIOR
vs
VDD (UCC37322)
IN = VDD
ENBL = VDD
VDD − Input Voltage − V
1 V/div
VDD − Input Voltage − V
1 V/div
IN = VDD
ENBL = VDD
VDD
VDD
OUT
OUT
0V
0V
10 nF Between Output and GND
50 µs/div
10 nF Between Output and GND
50 µs/div
Figure 25
Figure 26
OUTPUT BEHAVIOR
vs
VDD (NON-INVERTING)
OUTPUT BEHAVIOR
vs
VDD (NON-INVERTING)
IN = GND
ENBL = VDD
VDD
OUT
0V
VDD − Supply Voltage − V
1 V/div
VDD − Supply Voltage − V
1 V/div
IN = GND
ENBL = VDD
VDD
OUT
0V
10 nF Between Output and GND
50 µs/div
10 nF Between Output and GND
50 µs/div
Figure 27
Figure 28
www.ti.com
17
PACKAGE OPTION ADDENDUM
www.ti.com
19-Oct-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
UCC27321D
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27321DG4
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27321DGN
ACTIVE
MSOPPower
PAD
DGN
8
80
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27321DGNG4
ACTIVE
MSOPPower
PAD
DGN
8
80
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27321DGNR
ACTIVE
MSOPPower
PAD
DGN
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27321DGNRG4
ACTIVE
MSOPPower
PAD
DGN
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27321DR
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27321DRG4
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27321P
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
UCC27321PE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
UCC27322D
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27322DG4
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27322DGN
ACTIVE
MSOPPower
PAD
DGN
8
80
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27322DGNG4
ACTIVE
MSOPPower
PAD
DGN
8
80
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27322DGNR
ACTIVE
MSOPPower
PAD
DGN
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27322DGNRG4
ACTIVE
MSOPPower
PAD
DGN
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27322DR
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27322DRG4
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC27322P
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
UCC27322PE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
UCC37321D
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC37321DG4
ACTIVE
SOIC
D
8
75
Green (RoHS &
CU NIPDAU
Level-1-260C-UNLIM
Addendum-Page 1
Lead/Ball Finish
MSL Peak Temp (3)
PACKAGE OPTION ADDENDUM
www.ti.com
19-Oct-2007
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
UCC37321DGN
ACTIVE
MSOPPower
PAD
DGN
8
80
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC37321DGNG4
ACTIVE
MSOPPower
PAD
DGN
8
80
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC37321DGNR
ACTIVE
MSOPPower
PAD
DGN
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
UCC37321DGNRG4
ACTIVE
MSOPPower
PAD
DGN
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
UCC37321DR
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC37321DRG4
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC37321P
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
UCC37321PE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
UCC37322D
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC37322DG4
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC37322DGN
ACTIVE
MSOPPower
PAD
DGN
8
80
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC37322DGNG4
ACTIVE
MSOPPower
PAD
DGN
8
80
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC37322DGNR
ACTIVE
MSOPPower
PAD
DGN
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC37322DGNRG4
ACTIVE
MSOPPower
PAD
DGN
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC37322DR
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC37322DRG4
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UCC37322P
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
UCC37322PE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
Lead/Ball Finish
MSL Peak Temp (3)
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com
19-Oct-2007
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Mar-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
UCC27321DGNR
Package Package Pins
Type Drawing
MSOPPower
PAD
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
DGN
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
UCC27321DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
UCC27322DGNR
MSOPPower
PAD
DGN
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
UCC27322DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
UCC37321DGNR
MSOPPower
PAD
DGN
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
UCC37321DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
UCC37322DGNR
MSOPPower
PAD
DGN
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
UCC37322DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Mar-2008
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
UCC27321DGNR
MSOP-PowerPAD
DGN
8
2500
346.0
346.0
29.0
UCC27321DR
SOIC
D
8
2500
346.0
346.0
29.0
UCC27322DGNR
MSOP-PowerPAD
DGN
8
2500
346.0
346.0
29.0
UCC27322DR
SOIC
D
8
2500
346.0
346.0
29.0
UCC37321DGNR
MSOP-PowerPAD
DGN
8
2500
340.5
338.1
20.6
UCC37321DR
SOIC
D
8
2500
346.0
346.0
29.0
UCC37322DGNR
MSOP-PowerPAD
DGN
8
2500
346.0
346.0
29.0
UCC37322DR
SOIC
D
8
2500
346.0
346.0
29.0
Pack Materials-Page 2
MECHANICAL DATA
MPDI001A – JANUARY 1995 – REVISED JUNE 1999
P (R-PDIP-T8)
PLASTIC DUAL-IN-LINE
0.400 (10,60)
0.355 (9,02)
8
5
0.260 (6,60)
0.240 (6,10)
1
4
0.070 (1,78) MAX
0.325 (8,26)
0.300 (7,62)
0.020 (0,51) MIN
0.015 (0,38)
Gage Plane
0.200 (5,08) MAX
Seating Plane
0.010 (0,25) NOM
0.125 (3,18) MIN
0.100 (2,54)
0.021 (0,53)
0.015 (0,38)
0.430 (10,92)
MAX
0.010 (0,25) M
4040082/D 05/98
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Falls within JEDEC MS-001
For the latest package information, go to http://www.ti.com/sc/docs/package/pkg_info.htm
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
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sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.
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Following are URLs where you can obtain information on other Texas Instruments products and application solutions:
Products
Amplifiers
Data Converters
DSP
Clocks and Timers
Interface
Logic
Power Mgmt
Microcontrollers
RFID
RF/IF and ZigBee® Solutions
amplifier.ti.com
dataconverter.ti.com
dsp.ti.com
www.ti.com/clocks
interface.ti.com
logic.ti.com
power.ti.com
microcontroller.ti.com
www.ti-rfid.com
www.ti.com/lprf
Applications
Audio
Automotive
Broadband
Digital Control
Medical
Military
Optical Networking
Security
Telephony
Video & Imaging
Wireless
www.ti.com/audio
www.ti.com/automotive
www.ti.com/broadband
www.ti.com/digitalcontrol
www.ti.com/medical
www.ti.com/military
www.ti.com/opticalnetwork
www.ti.com/security
www.ti.com/telephony
www.ti.com/video
www.ti.com/wireless
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