ROHM UM6K1N

UM6K1N
Transistors
2.5V Drive Nch+Nch MOS FET
UM6K1N
zStructure
Silicon N-channel MOS FET
zExternal dimensions (Unit : mm)
UMT6
2.0
0.9
1.3
0.65
0.65
0.7
(5)
(4)
(6)
1.25
2.1
1pin mark
(3)
(1)
(2)
0.2
0.15
0.1Min.
zFeatures
1) Two 2SK3018 transistors in a single UMT package.
2) The MOS FET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for
portable equipment.
Each lead has same dimensions
Abbreviated symbol : K1
zApplications
Interfacing, switching (30V, 100mA)
zPackaging specifications
zInner circuit
Package
Type
(6)
(5)
TN
Basic ordering unit (pieces)
(4)
∗
Taping
Code
Gate
Protection
Diode
Tr1
3000
UM6K1N
Tr2
∗
(1)
(1)
(2)
(3)
(4)
(5)
(6)
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
IDP ∗1
PD ∗2
Tch
Tstg
Continuous
Pulsed
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Limits
30
±20
±100
±400
150
150
−55 to +150
Tr1
Tr1
Tr2
Tr2
Tr2
Tr1
Gate
Protection
Diode
Source
Gate
Drain
Source
Gate
Drain
(2)
(3)
∗ A protection diode has been built
in between the gate and the source
to protect against static electricity
when the product is in use.
Use the protection circuit when
rated voltages are exceeded.
Unit
V
V
mA
mA
mW
°C
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
zThermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a)
∗
Limits
Unit
833
1042
°C / W / TOTAL
°C / W / ELEMENT
∗ With each pin mounted on the recommended lands.
Rev.B
1/3
UM6K1N
Transistors
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Symbol
Min.
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Parameter
−
30
−
0.8
−
−
20
−
−
−
−
−
−
−
Static drain-source on-state
resistance
RDS (on)
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
Max.
±1
−
1.0
1.5
8
13
−
−
−
−
−
−
−
−
Conditions
VGS=±20V, VDS=0V
ID= 10µA, VGS=0V
VDS= 30V, VGS=0V
VDS= 3V, ID= 100µA
ID= 10mA, VGS= 4V
ID= 1mA, VGS= 2.5V
ID= 10mA, VDS= 3V
VDS= 5V
VGS=0V
f=1MHz
VDD 5V
ID= 10mA
VGS= 5V
RL=500Ω
RG=10Ω
Unit
µA
V
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
0.15
200m
50m
3.5V
0.1
2.5V
0.05
2V
2
10m
5m
2m
Ta=125°C
75°C
25°C
−25°C
1m
0.5m
3
4
0.1m
0
5
DRAIN-SOURCE VOLTAGE : VDS (V)
10
50
VGS=4V
Pulsed
Ta=125°C
75°C
25°C
−25°C
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
4
1
0.5
0
−50 −25
0.5
DRAIN CURRENT : ID (A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current ( )
20
5
2
1
0.005
0.01
0.02
0.05
0.1
0.2
DRAIN CURRENT : ID (A)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current ( )
25
50
75
100
125 150
Fig.3 Gate Threshold Voltage vs.
Channel Temperature
10
0.5
0.001 0.002
0
CHANNEL TEMPERATURE : Tch (°C)
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
VDS=3V
ID=0.1mA
1.5
Fig.2 Typical Transfer Characteristics
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
20
3
2
2
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical Output Characteristics
50
1
0.5
15
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
1
20m
0.2m
VGS=1.5V
0
0
VDS=3V
Pulsed
100m
3V
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
4V
GATE THRESHOLD VOLTAGE : VGS(th) (V)
zElectrical characteristic curves
Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
Rev.B
2/3
UM6K1N
Transistors
0.5
VDS=3V
Pulsed
0.2
ID=100mA
6
ID=50mA
5
4
3
2
0.1
0.05
Ta=−25°C
25°C
75°C
125°C
0.02
0.01
0.005
1
0.002
0
−50 −25
0.001
0.0001 0.0002
0
25
50
75
100 125
150
CHANNEL TEMPERATURE : Tch (°C)
0.05 0.1 0.2
20m
0V
5m
2m
1m
0.5m
0.1m
0.5
1
5m
2m
1m
0.5m
0.2m
0
1000
Coss
Crss
td(off)
200
100
50
20
tr
td(on)
10
5
0.5
0.1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
0.2
0.5
1
2
5
10
20
2
0.1 0.2
50
0.5
1
2
5
10
20
50
100
DRAIN CURRENT : ID (mA)
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.10 Reverse Drain Current vs.
Source-Drain Voltage ( )
1.5
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
tf
500
Ciss
2
1
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage ( )
10
5
0.5
SOURCE-DRAIN VOLTAGE : VSD (V)
1
0.2m
0
Ta=125°C
75°C
25°C
−25°C
10m
0.5
Ta=25°C
f=1MHZ
VGS=0V
Pulsed
20
CAPACITANCE : C (pF)
REVERCE DRAIN CURRENT : IDR (A)
0.005 0.01 0.02
50
50m
VGS=4V
50m
20m
Fig.8 Forward Transfer Admittance vs.
Drain Current
Ta=25°C
Pulsed
100m
VGS=0V
Pulsed
100m
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature
200m
200m
0.1m
0.0005 0.001 0.002
SWITHING TIME : t (ns)
7
10m
REVERCE DRAIN CURRENT : IDR (A)
VGS=4V
Pulsed
FORWARD TRANSFER
ADMITTANCE : Yfs (S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
9
8
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Fig.12 Switching Characteristics
zSwitching characteristics measurement circuit
Pulse Width
VGS
RG
VGS
ID
D.U.T.
VDS
RL
10%
90%
90%
tr
td(on)
ton
Switching Time Test Circuit
50%
10%
VDS
VDD
Fig.13
90%
50%
10%
Fig.14
td(off)
tf
toff
Switching Time Waveforms
Rev.B
3/3
Appendix
Notes
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means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1