UM6K1N Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) UMT6 2.0 0.9 1.3 0.65 0.65 0.7 (5) (4) (6) 1.25 2.1 1pin mark (3) (1) (2) 0.2 0.15 0.1Min. zFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 4) Low On-resistance. 5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment. Each lead has same dimensions Abbreviated symbol : K1 zApplications Interfacing, switching (30V, 100mA) zPackaging specifications zInner circuit Package Type (6) (5) TN Basic ordering unit (pieces) (4) ∗ Taping Code Gate Protection Diode Tr1 3000 UM6K1N Tr2 ∗ (1) (1) (2) (3) (4) (5) (6) zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for Tr1 and Tr2.> Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS ID IDP ∗1 PD ∗2 Tch Tstg Continuous Pulsed Drain current Total power dissipation Channel temperature Range of storage temperature Limits 30 ±20 ±100 ±400 150 150 −55 to +150 Tr1 Tr1 Tr2 Tr2 Tr2 Tr1 Gate Protection Diode Source Gate Drain Source Gate Drain (2) (3) ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. Unit V V mA mA mW °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits Unit 833 1042 °C / W / TOTAL °C / W / ELEMENT ∗ With each pin mounted on the recommended lands. Rev.B 1/3 UM6K1N Transistors zElectrical characteristics (Ta=25°C) <It is the same characteristics for Tr1 and Tr2.> Symbol Min. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Parameter − 30 − 0.8 − − 20 − − − − − − − Static drain-source on-state resistance RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Typ. − − − − 5 7 − 13 9 4 15 35 80 80 Max. ±1 − 1.0 1.5 8 13 − − − − − − − − Conditions VGS=±20V, VDS=0V ID= 10µA, VGS=0V VDS= 30V, VGS=0V VDS= 3V, ID= 100µA ID= 10mA, VGS= 4V ID= 1mA, VGS= 2.5V ID= 10mA, VDS= 3V VDS= 5V VGS=0V f=1MHz VDD 5V ID= 10mA VGS= 5V RL=500Ω RG=10Ω Unit µA V µA V Ω Ω mS pF pF pF ns ns ns ns 0.15 200m 50m 3.5V 0.1 2.5V 0.05 2V 2 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 3 4 0.1m 0 5 DRAIN-SOURCE VOLTAGE : VDS (V) 10 50 VGS=4V Pulsed Ta=125°C 75°C 25°C −25°C 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 4 1 0.5 0 −50 −25 0.5 DRAIN CURRENT : ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( ) 20 5 2 1 0.005 0.01 0.02 0.05 0.1 0.2 DRAIN CURRENT : ID (A) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current ( ) 25 50 75 100 125 150 Fig.3 Gate Threshold Voltage vs. Channel Temperature 10 0.5 0.001 0.002 0 CHANNEL TEMPERATURE : Tch (°C) VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C VDS=3V ID=0.1mA 1.5 Fig.2 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 20 3 2 2 GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Typical Output Characteristics 50 1 0.5 15 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 1 20m 0.2m VGS=1.5V 0 0 VDS=3V Pulsed 100m 3V DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 4V GATE THRESHOLD VOLTAGE : VGS(th) (V) zElectrical characteristic curves Ta=25°C Pulsed 10 5 ID=0.1A ID=0.05A 0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Rev.B 2/3 UM6K1N Transistors 0.5 VDS=3V Pulsed 0.2 ID=100mA 6 ID=50mA 5 4 3 2 0.1 0.05 Ta=−25°C 25°C 75°C 125°C 0.02 0.01 0.005 1 0.002 0 −50 −25 0.001 0.0001 0.0002 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) 0.05 0.1 0.2 20m 0V 5m 2m 1m 0.5m 0.1m 0.5 1 5m 2m 1m 0.5m 0.2m 0 1000 Coss Crss td(off) 200 100 50 20 tr td(on) 10 5 0.5 0.1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) 0.2 0.5 1 2 5 10 20 2 0.1 0.2 50 0.5 1 2 5 10 20 50 100 DRAIN CURRENT : ID (mA) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Reverse Drain Current vs. Source-Drain Voltage ( ) 1.5 Ta=25°C VDD=5V VGS=5V RG=10Ω tf 500 Ciss 2 1 Fig.9 Reverse Drain Current vs. Source-Drain Voltage ( ) 10 5 0.5 SOURCE-DRAIN VOLTAGE : VSD (V) 1 0.2m 0 Ta=125°C 75°C 25°C −25°C 10m 0.5 Ta=25°C f=1MHZ VGS=0V Pulsed 20 CAPACITANCE : C (pF) REVERCE DRAIN CURRENT : IDR (A) 0.005 0.01 0.02 50 50m VGS=4V 50m 20m Fig.8 Forward Transfer Admittance vs. Drain Current Ta=25°C Pulsed 100m VGS=0V Pulsed 100m DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature 200m 200m 0.1m 0.0005 0.001 0.002 SWITHING TIME : t (ns) 7 10m REVERCE DRAIN CURRENT : IDR (A) VGS=4V Pulsed FORWARD TRANSFER ADMITTANCE : Yfs (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 9 8 Fig.11 Typical Capacitance vs. Drain-Source Voltage Fig.12 Switching Characteristics zSwitching characteristics measurement circuit Pulse Width VGS RG VGS ID D.U.T. VDS RL 10% 90% 90% tr td(on) ton Switching Time Test Circuit 50% 10% VDS VDD Fig.13 90% 50% 10% Fig.14 td(off) tf toff Switching Time Waveforms Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1