General purpose (dual transistors) EMX3 / UMX3N / IMX3 Features Dimensions (Unit : mm) Two 2SC2412AK chips in a EMT or UMT or SMT package. Inner circuits IMX3 Tr1 (4) (5) (6) Tr2 (1) 0.5 (1) Tr2 (2) 1.2 1.6 0.13 (2) (5) (6) EMX3 / UMX3N (3) (3) (4) Tr1 ROHM : EMT6 (4) (5) (6) (3) 0.5 0.5 1.0 1.6 0.22 EMX3 (2) Each lead has same dimensions (1) 1.3 2.0 0.65 (3) (2) IMX3 1.25 UMT6 SMT6 2.1 Marking Code X3 T2R X3 TR X3 T108 Basic ordering unit (pieces) 8000 3000 3000 0.1Min. 0~0.1 0.9 UMX3N EMT6 0.7 EMX3 0.65 (1) Type Package 0.15 (6) Package, marking, and packaging specifications (5) 0.2 (4) UMX3N Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Absolute maximum ratings (Ta=25C) V IC 150 mA EEMX3 / UMX3N IMX3 Junction temperature Storage temperature PC 150(TOTAL) 300(TOTAL) mW ∗1 ∗2 Tj 150 °C 1.6 Tstg −55 to +150 °C 2.8 0.15 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. 0.3Min. 0.8 Collector power dissipation IMX3 0~0.1 Collector current 1.1 7 0.95 0.95 1.9 2.9 VEBO (1) V Emitter-base voltage (2) 50 (3) VCEO (6) V Collector-emitter voltage (5) Unit 60 (4) Limits VCBO Parameter 0.3 Symbol Collector-base voltage ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 60 − − V IC=50μA Conditions Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO 7 − − − − 0.1 V μA IE=50μA VCB=60V VEB=7V IEBO − − 0.1 μA VCE(sat) − − 0.4 V IC/IB=50mA/5mA hFE 120 − 560 − VCE=6V, IC=1mA Transition frequency fT − 180 − MHz Output capacitance Cob − 2 3.5 pF Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio VCE=12V, IE=−2mA, f=100MHz ∗ VCB=12V, IE=0mA, f=1MHz ∗Transition frequency of the device. www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 1/3 2011.12 - Rev.B EMX3 / UMX3N / IMX3 Data Sheet Electrical characteristics curves COLLECTOR CURRENT : IC (mA) 2 1 25°C −55°C 5 0.5 0.2 Fig.1 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 0.4 0.8 1.2 Fig.2 Grounded emitter propagation characteristics 500 DC CURRENT GAIN : hFE 100 50 20 0.5 1 2 5 10 20 100 50 20 10 0.2 50 100 200 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) IC/IB=10 0.2 Ta=100°C 25°C −55°C 0.05 0.02 0.01 0.2 −55°C COLLECTOR CURRENT : IC (mA) 0.5 0.1 25°C 200 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 0.5 0.2 21μA 6 18μA 15μA 12μA 4 9μA 6μA 2 3μA 4 IB=0A 12 8 Fig.3 0.5 Ta=25°C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 0.05 0.02 0.01 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) 2/3 50 100 200 Fig. 6 Collector-emitter saturation voltage vs. collector current Ta=100°C 25°C −55°C 2 20 Grounded emitter output characteristics ( ΙΙ ) IC/IB=50 0.5 1 16 COLLECTOR CURRENT : IC (mA) 0.1 0.2 24μA COLLECTOR TO EMITTER VOLTAGE : VCE (V) TRANSITION FREQUENCY : fT (MHz) 10 0.2 VCE=5V Ta=100°C VCE=5V 3V 1V 27μA 0 0 2.0 30μA Ta=25°C 8 Grounded emitter output characteristics ( Ι ) Ta=25°C 200 1.6 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE 0.25mA 60 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.30mA 0 0.1 0 500 80 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 10 Ta=100°C COLLECTOR CURRENT : IC (mA) 20 0.50mA mA 0.45 A 0.40m m 0.35 A Ta=25°C VCE=6V COLLECTOR CURRENT : IC (mA) 100 50 Ta=25°C VCE=6V 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.9 Gain bandwidth product vs. emitter current 2011.12 - Rev.B Data Sheet 20 10 Ta=25°C f=1MHz IE=0A IC=0A Cib 5 2 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) EMX3 / UMX3N / IMX3 Ta=25°C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.11 Base-collector time constant vs. emitter current 3/3 2011.12 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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