PANASONIC UN2225

Transistors with built-in Resistor
UNR2225 (UN2225), UNR2226 (UN2226),
UNR2227 (UN2227)
Silicon NPN epitaxial planar type
Unit: mm
0.40+0.10
–0.05
0.16+0.10
–0.06
0.4±0.2
2
1
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• Mini type package allowing easy automatic insertion through tape
packing and magazine packing
(0.95) (0.95)
1.9±0.1
(0.65)
■ Features
5˚
1.50+0.25
–0.05
For muting
2.8+0.2
–0.3
3
2.90+0.20
–0.05
1.1+0.2
–0.1
(R2)


6.8 kΩ
0 to 0.1
Marking Symbol (R1)
• UNR2225 (UN2225)
FZ
10 kΩ
• UNR2226 (UN2226)
FY
4.7 kΩ
• UNR2227 (UN2227)
FW
6.8 kΩ
1.1+0.3
–0.1
10˚
■ Resistance by Part Number
■ Absolute Maximum Ratings Ta = 25°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
600
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
R1
C
B
R2
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 1 µA, IE = 0
30
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
20
V
Emitter-base voltage (Collector open)
VEBO
IE = 1 µA, IC = 0
5
Collector-base cutoff current (Emitter open)
ICBO
VCB = 30 V, IE = 0
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
Forward current
UNR2227
hFE
VCE = 10 V, IC = 100 mA
transfer ratio
UNR2225/2226
VCE(sat)
IC = 50 mA, IB = 2.5 mA
Collector-emitter saturation voltage
Input resistance
UNR2226
Conditions
Min
−30%
1
µA
1
µA

600
4.7
80
mV
+30%
kΩ
1.2

6.8
UNR2225
UNR2227
Unit
V
100
R1
Max
70
UNR2227
Resistance ratio
Typ
10
R1/R2
0.8
1.0
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00040CED
1
UNR2225/2226/2227
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter
Resistance ratio
Symbol
UNR2226
Conditions
Min
VI = 7 V, RL = 1 kΩ, f = 1 kHz
Ron
Typ
UNR2227
1.1
UNR2225
1.5
Transition frequency
VCB = 10 V, IE = −50 mA, f = 200 MHz
fT
Max
Unit
Ω
0.95
200
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Refer to Ron measurment circuit
RL
R1
f = 1 kHz
V = 0.3 V
R2
VI
VB VV
VA
Ron =
VB
× RL (Ω)
VA−VB
Common characteristics chart
PT  Ta
Total power dissipation PT (mW)
250
200
150
100
50
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR2225
VCE(sat)  IC
IB = 1.0 mA
300
0.9 mA
0.8 mA
0.7 mA
200
0.6 mA
0.5 mA
0.4 mA
100
0.3 mA
0.2 mA
0.1 mA
0
0
2.5
5.0
7.5
10.0
Collector-emitter voltage VCE (V)
2
1 000
hFE  IC
IC / IB = 10
100
Ta = 75°C
−25°C
10
25°C
1
250
VCE = 10 V
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (mV)
IC  VCE
400
200
Ta = 75°C
150
100
50
0
1
10
Collector current IC (mA)
SJH00040CED
100
25°C
−25°C
1
10
102
103
Collector current IC (mA)
104
UNR2225/2226/2227
IO  VIN
105
VIN  IO
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
10
5
Input voltage VIN (V)
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
14
103
102
10
1
10
1
10
1
1
0.25
100
0.50
0.75
1.00
1.25
0.1
10−3
1.50
Input voltage VIN (V)
Collector-base voltage VCB (V)
10−2
10−1
1
10
102
Output current IO (mA)
Characteristics charts of UNR2226
VCE(sat)  IC
IB = 1.0 mA
Collector current IC (mA)
0.9 mA
300
0.8 mA
0.7 mA
0.6 mA
200
0.5 mA
0.4 mA
0.3 mA
100
0.2 mA
0.1 mA
0
0
2.5
5.0
7.5
1 000
100
Ta = 75°C
25°C
−25°C
10
1
10.0
10
1
Cob  VCB
400
Ta = 75°C
300
25°C
−25°C
200
100
0
1 000
1
f = 1 MHz
102
10
103
104
Collector current IC (mA)
IO  VIN
105
VIN  IO
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
10
5
Input voltage VIN (V)
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
100
VCE = 10 V
Collector current IC (mA)
Collector-emitter voltage VCE (V)
14
hFE  IC
500
IC / IB = 10
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (mV)
IC  VCE
400
103
102
10
1
10
1
1
10
Collector-base voltage VCB (V)
100
1
0.25
0.50
0.75
1.00
1.25
Input voltage VIN (V)
SJH00040CED
1.50
0.1
10−3
10−2
10−1
1
10
102
Output current IO (mA)
3
UNR2225/2226/2227
Characteristics charts of UNR2227
IC  VCE
VCE(sat)  IC
1 000
IB = 1.0 mA
300
0.9 mA
0.8 mA
0.7 mA
200
0.6 mA
0.5 mA
0.4 mA
100
0.3 mA
0.2 mA
0.1 mA
0
0
2
4
6
IC / IB = 10
100
Ta = 75°C
25°C
−25°C
1
10
−25°C
100
50
1
102
10
103
104
Collector current IC (mA)
VIN  IO
100
VO = 5 V
Ta = 25°C
f = 1 MHz
VO = 0.2 V
Ta = 25°C
12
8
Input voltage VIN (V)
10
16
Output current IO (mA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
25°C
150
IO  VIN
100
1
0.1
10
1
0.01
4
1
10
Collector-base voltage VCB (V)
4
Ta = 75°C
200
0
1 000
100
250
Collector current IC (mA)
Cob  VCB
0
VCE = 10 V
10
10
Collector-emitter voltage VCE (V)
20
hFE  IC
300
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (mV)
Collector current IC (mA)
400
100
0.001
0.25
0.50
0.75
1.00
1.25
Input voltage VIN (V)
SJH00040CED
1.50
0.1
10−3
10−2
10−1
1
10
Output current IO (mA)
102
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and semiconductors described in this material
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the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
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2003 SEP