DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1722 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) DESCRIPTION The µPA1722 is N-Channel MOS Field Effect 8 Transistor designed for DC/DC converters and power 5 management applications of notebook computers. 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES • Low on-resistance RDS(on)1 = 21.0 mΩ MAX. (VGS = 10 V, ID = 4.5 A) 0.05 MIN. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 4.4 5.37 MAX. 0.8 +0.10 –0.05 • Low Ciss: Ciss = 980 pF TYP. 6.0 ±0.3 4 0.15 RDS(on)3 = 32.0 mΩ MAX. (VGS = 4.0 V, ID = 4.5 A) 1.44 1 RDS(on)2 = 29.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A) 1.8 MAX. • • • 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M • ORDERING INFORMATION PART NUMBER PACKAGE µPA1722G Power SOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) ±9 A ID(pulse) ±36 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm Remark EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G13890EJ1V0DS00 (1st edition) Date Published November 1999 NS CP(K) Printed in Japan The mark • shows major revised points. © 1998, 1999 µ PA1722 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS • SYMBOL Drain to Source On-state Resistance TYP. MAX. UNIT VGS = 10 V, ID = 4.5 A 14.0 21.0 mΩ RDS(on)2 VGS = 4.5 V, ID = 4.5 A 19.0 29.0 mΩ RDS(on)3 VGS = 4.0 V, ID = 4.5 A 22.0 32.0 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 4.5 A 5.0 9.2 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 980 pF Output Capacitance Coss VGS = 0 V 320 pF Reverse Transfer Capacitance Crss f = 1 MHz 125 pF Turn-on Delay Time td(on) ID = 4.5 A 20 ns VGS(on) = 10 V 80 ns td(off) VDD = 15 V 60 ns tf RG = 10 Ω 30 ns Rise Time tr Turn-off Delay Time Fall Time • MIN. RDS(on)1 Gate to Source Cut-off Voltage • TEST CONDITIONS S Total Gate Charge QG ID = 9 A 20 nC Gate to Source Charge QGS VDD = 24 V 2.3 nC Gate to Drain Charge QGD VGS = 10 V 6.0 nC VF(S-D) IF = 9 A, VGS = 0 V 0.84 V Reverse Recovery Time trr IF = 9 A, VGS = 0 V 35 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 45 nC Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. 90 % 90 % ID VGS 0 ID 10 % 0 10 % Wave Form τ τ = 1µ s Duty Cycle ≤ 1 % tr td(on) ton RL 50 Ω VDD 90 % VDD ID 2 VGS(on) 10 % IG = 2 mA td(off) tf toff Data Sheet G13890EJ1V0DS00 µ PA1722 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 20 40 60 80 2.0 1.6 1.2 0.8 0.4 0 100 120 140 160 Mounted on ceramic substrate of 1200 mm 2 × 2.2 mm 2.4 TA - Ambient Temperature - ˚C 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 Remark ID(pulse) 10 Mounted on ceramicsubstrate of 1200 mm × 2.2 mm s ID(DC) 10 10 s 0µ 2 1m RDS(on) Limited (VGS=10V) s m 10 s we 0m Po io at ip iss rD 1 n TA = 25 ˚C Single Pulse 0.2 0.02 0.1 d ite m Li 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A • Rth(ch-A) = 62.5˚C/W 100 10 1 0.1 0.01 100µ Mounted on ceramic substrate of 1200 mm2 x 2.2 mm Single Pulse TA = 25˚C 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G13890EJ1V0DS00 3 µ PA1722 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 36 Pulsed ID - Drain Current - A ID - Drain Current - A 32 10 TA = 150˚C 75˚C 25˚C −25˚C 1 4.5 V VGS = 10 V Pulsed 4.0 V 28 24 20 16 12 8 4 0.1 0 VDS = 10 V 6 8 4 2 0 VGS - Gate to Source Voltage - V 100 10 TA = −25˚C 25˚C 75˚C 150˚C VDS =10 V Pulsed 0.1 0.01 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1 0.8 0.4 1.2 1.6 2.0 VDS - Drain to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed 90 80 70 ID = 9 A 4.5A 60 50 40 30 20 10 5 0 10 15 VGS - Gate to Source Voltage - V 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 Pulsed 60 VGS = 4.0 V 40 4.5 V 20 0 0.1 10 V 1 10 100 VGS(off) - Gate to Source Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 5 VDS = 10 V ID = 1 mA 4 3 2 1 0 −50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet G13890EJ1V0DS00 200 100 50 IF - Diode Forward Current - A ID = 4.5 A 40 VGS = 4.0 V 30 4.5 V 20 10 V 10 0 −50 0 50 100 VGS = 10 V 1 100 1000 Crss 0.1 1 10 1.0 1.2 1.4 di/dt = 100A /µs VGS = 0 V 10 1 0.1 100 1 10 100 14 VGS 30 VDD = 24 V 15 V 6V 12 10 8 6 4 10 2 VGS - Gate to Source Voltage - V ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 VDS - Drain to Source Voltage - V 0.8 100 VDS - Drain to Source Voltage - V ID = 9 A VGS 4 0.6 REVERSE RECOVERY TIME vs. DRAIN CURRENT Ciss 0 0.4 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Coss 0 Pulsed 0.2 VSD - Source to Drain Voltage - V 1000 20 0V Tch - Channel Temperature - ˚C VGS = 0 V f = 1 MHz 10 0.01 10 0.1 0 150 10000 Ciss, Coss, Crss - Capacitance - pF SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE trr - Reverse Recovery Diode - ns RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1722 8 12 16 20 24 28 0 32 QG - Gate Charge - nC Data Sheet G13890EJ1V0DS00 5 µ PA1722 [MEMO] 6 Data Sheet G13890EJ1V0DS00 µ PA1722 [MEMO] Data Sheet G13890EJ1V0DS00 7 µ PA1722 • The information in this document is subject to change without notice. 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