DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1917 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION • 1.8 V drive available • Low on-state resistance RDS(on)1 = 53 mΩ MAX. (VGS = –4.5 V, ID = –3.0 A) RDS(on)2 = 70 mΩ MAX. (VGS = –2.5 V, ID = –3.0 A) RDS(on)3 = 107 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A) +0.1 0.65–0.15 0.16+0.1 –0.06 6 5 4 1 2 3 1.5 FEATURES 0.32 +0.1 –0.05 2.8 ±0.2 The µPA1917 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0 to 0.1 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 ORDERING INFORMATION 1, 2, 5, 6 : Drain 3 : Gate 4 : Source PART NUMBER PACKAGE µPA1917TE SC-95 (Mini Mold Thin Type) EQUIVALENT CIRCUIT Marking : TR Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS –20 V Gate to Source Voltage (VDS = 0 V) VGSS m8.0 V ID(DC) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 m6.0 A ID(pulse) m24 A PT1 0.2 W PT2 2.0 W Total Power Dissipation Total Power Dissipation Note2 Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15925EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan © 2002 µ PA1917 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –20 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = m8.0 V, VDS = 0 V m10 µA –1.5 V Gate to Source Cut-off Voltage VGS(off) Forward Transfer Admittance Drain to Source On-state Resistance VDS = –10 V, ID = –1.0 mA –0.45 –0.75 5.0 10.4 | yfs | VDS = –10 V, ID = –3.0 A S RDS(on)1 VGS = –4.5 V, ID = –3.0 A 42 53 mΩ RDS(on)2 VGS = –2.5 V, ID = –3.0 A 52 70 mΩ RDS(on)3 VGS = –1.8 V, ID = –1.5 A 64 107 mΩ Input Capacitance Ciss VDS = –10 V 835 pF Output Capacitance Coss VGS = 0 V 170 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 99 pF Turn-on Delay Time td(on) VDD = –10 V, ID = –3.0 A 16 ns VGS = –4.0 V 64 ns RG = 10 Ω 78 ns 108 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = –16 V 8.1 nC Gate to Source Charge QGS VGS = –4.0 V 1.3 nC Gate to Drain Charge QGD ID = –6.0 A 2.8 nC IF = 6.0 A, VGS = 0 V 0.94 V Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS(−) RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. VDS(−) 90% VGS(−) 0 τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton IG = −2 mA RL 50 Ω VDD 90% td(off) tf toff Data Sheet G15925EJ1V0DS µ PA1917 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 2.4 100 2 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA 80 60 40 20 1.6 1.2 0.8 0.4 0 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 175 175 TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA - 100 RDS(on) Limited (VGS = −4.5 V) PW = 100 µs ID(DC) 1 ms -1 10 ms 100 ms 5s - 0.1 Single Pulse Mounted on FR-4 board of 50 mm×50 mm×1.6 mm - 0.01 - 0.1 -1 - 10 - 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A - 10 ID(pulse) 1000 Single Pulse Without board 100 Mounted on FR-4 board of 50 mm × 50 mm × 1.6 mm 10 1 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G15925EJ1V0DS 3 µ PA1917 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 20 FORWARD TRANSFER CHARACTERISTICS -100 VGS = − 4.5 V Pulsed ID - Drain Current - A ID - Drain Current - A -10 - 16 − 2.5 V - 12 -8 −1.8 V -1 -0.1 T A = 125°C 75°C 25°C −25°C -0.01 -0.001 -4 -0.0001 0 -0.00001 0 -0.2 -0.4 -0.6 -0.8 -1 0 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S -0.8 0 50 100 150 10 1 0.1 0.01 -0.01 -0.1 100 TA = 125°C 75°C 25°C 40 -25°C -0.1 -1 -10 -100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ Pulsed VGS = − 4.5 V 60 -10 -100 DRAIN TO SOURCE ON-STATE RESISTANCE vs.DRAIN CURRENT 140 80 -1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs DRAIN CURRENT 120 Pulsed VDS = −10 V TA = −25°C 25°C 75°C 125°C Tch - Channel Temperature - °C 140 Pulsed VGS = −2.5 V 120 TA = 125°C 100 75°C 80 25°C 60 −25°C 40 20 -0.01 ID – Drain Current - A 4 -3 100 VDS = −10 V ID = −1 mA 20 -0.01 -2 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT -1.3 -0.3 -50 -1 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V Pulsed VDS = −10 V -0.1 -1 -10 ID - Drain Current - A Data Sheet G15925EJ1V0DS -100 µ PA1917 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 140 Pulsed VGS = −1.8 V 120 100 TA = 125°C 80 75°C 25°C 60 −25°C 40 20 -0.01 -0.1 -1 -10 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulsed ID = −3.0 A 80 60 40 20 0 -2 ID - Drain Current - A -6 -8 - 10 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 10000 f = 1MHz VGS = 0 V VGS = -1.8 V (ID = −1.5 A) Pulsed ID = −3.0 A Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 −2.5 V −4.5 V 60 40 20 -50 0 50 100 1000 Coss Crss 10 -0.1 150 -1 -10 -100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS -5 1000 VDD = −15 V VGS = −4.0 V RG = 10 Ω VGS – Gate to Source Voltage - V ID = − 6.0 A tf 100 tr td(off) td(on) 10 1 -0.1 Ciss 100 Tch – Channel Temperrature - °C td(on), tr, td(off), tf - Switching Time – ns -4 VGS – Gate to Source Voltage - V -4 VDD = − 4 V −10 V −16 V -3 -2 -1 0 -1 -10 ID - Drain Current - A 0 2 4 6 8 QG – Gate Charge - nC Data Sheet G15925EJ1V0DS 5 µ PA1917 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 IF - Diode Forward Current - A Pulsed 10 1 0.1 0.01 0.4 0.6 0.8 1 1.2 1.4 1.6 VF(S-D) - Source to Drain Voltage - V 6 Data Sheet G15925EJ1V0DS µ PA1917 [MEMO] Data Sheet G15925EJ1V0DS 7 µ PA1917 • The information in this document is current as of June, 2002. 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