Data Sheet μPA2660T1R R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 mΩ Description The μPA2660T1R is Dual N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features • DS MAXIMUM RATINGS 20V(TA = 25°C) • 2.5V drive available • Low on-state resistance ⎯ RDS (on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) ⎯ RDS (on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A) • Built-in gate protection diode • Lead-free and Halogen-free 6pinHUSON2020(Dual) Ordering Information Part Number Package μPA2660T1R-E2-AX∗1 6pinHUSON2020(Dual) Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (1 unit, 5 s) ∗2 Total Power Dissipation (2 units, 5 s) ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch TSTG Ratings Unit 20 ±12 ±4.0 ±16 1.5 2.3 150 –55 to +150 V V A A W W °C °C Channel Temperature Storage Temperature Notes: ∗1. PW≤10 μs, Duty Cycle≤1% ∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt Caution: This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD = ±400V MIN. ( C = 100pF, R = 1.5KΩ ) R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 Page 1 of 6 μPA2660T1R Electrical Characteristics (TA = 25°C) Characteristics Symbol Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 IDSS IGSS VGS(off) | yfs | RDS(on)1 Drain to Source On-state Resistance ∗1 TYP. 0.5 5.0 33 43 330 66 38 12 6.4 27 6.6 4.5 1.0 1.5 RDS(on)2 Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Note: MIN. MAX. Unit 1.0 ±10 1.5 μA μA 42 62 1.5 VF(S–D) V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Test Conditions VDS = 20 V, VGS = 0 V VGS = ±10 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.0 A VGS = 4.5 V, ID = 2.0 A VGS = 2.5 V, ID = 2.0 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz ID = 2.0 A, VDD = 10 V, VGS = 4.5 V, RG = 6 Ω ID = 4.0 A , VDD = 16 V, VGS = 10 V IF = 4.0 A, VGS = 0 V ∗1. Pulsed TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% IG = 2 mA RL 50 Ω VDD 90% PG. VDS 90% VGS 0 90% VDS VDS τ τ = 1 μs Duty Cycle ≤ 1% R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 10% 0 10% Wave Form td(on) tr ton td(off) tf toff Page 2 of 6 μPA2660T1R Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. OPERATING AREA AMBIENT TEMPERATURE 2.5 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt PW=5sec 2 1.5 2units 1 1unit 0.5 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TA -Ambient Temperature - °C TA -Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID – Drain Current - A 100 10 ID(pulse)=16A ID(DC)=4A 1 Power Dissipation Limited 0.1 TA=25ºC 2units Single Pulse Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt 0.01 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Single pulse Rth(ch-a)=83.3ºC/W(1units 5s) 100 Rth(ch-a)=54.3ºC/W(2units 5s) 10 1 0.1 0.01 Rth(ch-A) : Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 Page 3 of 6 μPA2660T1R DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE 10 20 2.5V 10 1 ID - Drain Current - A ID –Drain Current - A VGS=4.5V 15 TA=150°C 75°C 25°C -55°C 0.1 0.01 5 0.001 Pulsed 0 0 0.5 1 1.5 VDS = 10V Pulsed 0.0001 2 0 0.5 2 GATE TO SOURCE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs. CHANNEL TEMPERATURE DRAIN CURRENT 1.2 100 0.8 0.6 0.4 0.2 VDS = 10V ID = 1mA 0.0 -50 0 50 100 150 10 TA = 150°C 75°C 25°C -55°C 1 0.1 S 1.0 0.01 VDS = 10V Pulsed 0.001 0.001 0.01 Tch - Channel Temperature - °C 0.1 1 10 100 ID – Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 100 Pulsed 80 60 VGS = 2.5V 40 4.5V 20 0 0.1 1 10 ID - Drain Current - A R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 100 RDS(on) – Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 1.5 VGS - Gate to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) – Gate to Source Cut-off Voltage - V VDS - Drain to Source Voltage - V 1 100 ID = 2.0A Pulsed 80 60 40 20 0 0 2 4 6 8 10 VGS - Gate to Source Voltage - V Page 4 of 6 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. CHANNEL TEMPERATURE VOLTAGE 100 Ciss, Coss, Crss - Capacitance - pF Pulsed ID = 2.0A 80 60 VGS = 2.5V 40 4.5V 20 1,000 Ciss 100 Coss Crss VGS = 0V f = 1.0MHz 10 0 -50 0 50 100 0.1 150 1 10 100 VDS – Drain to Source Voltage - V Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 30 VDS - Drain to Source Voltage - V 100 td(on), tf, td(off), tr - Switching Time -μs DRAIN TO SOURCE td(off) td(on) tf 10 tr VDD = 10V VGS = 4.5V RG = 6Ω 1 0.1 1 10 VDD= 20V 16V 10V 25 VDS 20 12 VGS 10 8 15 6 10 4 5 2 ID=4.0A 0 100 0 0 1 2 3 4 5 6 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current – A 100 Pulsed VGS=4.5V 2.5V 10 0V 1 0 0.5 1 1.5 VF(S–D) - Drain to Source Voltage - V R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 Page 5 of 6 VGS - Gate to Source Voltage - V RDS(on) –Drain to Source On-state Resistance - mΩ μPA2660T1R μPA2660T1R Package Drawings (Unit: mm) 6pinHUSON2020 0.25±0.05 2±0.1 A ▼ RENESAS Package code：PWSN0006JD-A B 1.7±0.05 4 5 6 ▼ 3 0.05 S 0.65±0.03 0 to 0.01 0.75 MAX. 0.2±0.03 0.7±0.04 3 0.3±0.05 ▼ 1：Source1 2：Gate1 6：Drain1 S 1±0.05 2±0.1 0.3 6 2 1 0.05 M S A B 4：Source2 5：Gate2 3：Drain2 Equivalent Circuit (1/2 circuit) Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2012 Renesas Electronics Corporation. All rights reserved. Colophon 2.2