Data Sheet μPA2672T1R R07DS0834EJ0101 Rev.1.01 Apr 15, 2013 DUAL P-CHANNEL MOSFET –12 V, –4.0 A, 67 mΩ Description The μPA2672T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features • –1.8V drive available • Low on-state resistance ⎯ RDS (on)1 = 67 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A) ⎯ RDS (on)2 = 92 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A) ⎯ RDS (on)3 = 159 mΩ MAX. (VGS = –1.8 V, ID = –2.0 A) • Built-in gate protection diode • Lead-free and Halogen-free 6pinHUSON2020(Dual) Ordering Information Part Number Package μPA2672T1R-E2-AX∗1 6pinHUSON2020 Note: ∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (1 unit, 5 s) ∗2 Total Power Dissipation (2 units, 5 s) ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch TSTG Ratings Unit –12 m10 m4.0 m16 1.5 2.3 150 –55 to +150 V V A A W W °C °C Channel Temperature Storage Temperature Notes: ∗1. PW≤10 μs, Duty Cycle≤1% ∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt R07DS0834EJ0101 Rev.1.01 Apr 15, 2013 Page 1 of 6 μPA2672T1R Electrical Characteristics (TA = 25°C) Characteristics Symbol Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state Resistance ∗1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 MIN. IDSS IGSS VGS(off) | yfs | RDS(on)1 TYP. MAX. Unit –1.0 m10 –1.1 μA μA –0.4 4.5 52 68 95 486 108 82 11.5 3.5 24.0 20.0 5.0 1.0 1.3 RDS(on)2 RDS(on)3 Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD 67 92 159 1.5 VF(S–D) V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Test Conditions VDS = –12 V, VGS = 0 V VGS = m8 V, VDS = 0 V VDS = –10 V, ID = –1 mA VDS = –5 V, ID = –2.0 A VGS = –4.5 V, ID = –2.0 A VGS = –2.5 V, ID = –2.0 A VGS = –1.8 V, ID = –2.0 A VDS = –10 V, VGS = 0 V, f = 1.0 MHz ID = –2.0 A, VDD = –6 V, VGS = –4.0 V, RG = 6 Ω ID = –4.0 A , VDD = –9.6 V, VGS = –4.5 V IF = 4.0 A, VGS = 0 V ∗1. Pulsed Note: TEST CIRCUIT 2 GATE CHARGE TEST CIRCUIT 1 SWITCHING TIME D.U.T. D.U.T. RL RG PG. VGS(−) VGS Wave Form 0 VGS 10% IG = −2 mA RL 50 Ω VDD 90% PG. VDD VDS(−) VGS(−) 0 VDS Wave Form τ τ = 1 μs Duty Cycle ≤ 1% R07DS0834EJ0101 Rev.1.01 Apr 15, 2013 VDS 90% 90% 10% 10% 0 td(on) tr td(off) ton tf toff Page 2 of 6 μPA2672T1R Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. OPERATING AREA AMBIENT TEMPERATURE 2.5 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt PW=5sec 2 1.5 2 units 1 1 units 0.5 0 0 0 25 50 75 100 125 150 0 175 25 TA -Ambient Temperature - °C 50 75 100 125 150 175 TA -Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA -100 ID – Drain Current - A ID(DC)=-4A ID(pulse)=-16A -10 -1 Power Dissipation Limited -0.1 TA=25ºC Single Pulse 2 units Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt -0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Single pulse 1unit, Rth(ch-a)=83.3ºC/W(5s) 100 2unit, Rth(ch-a)=54.3ºC/W(5s) 10 1 0.1 Rth(ch-A) : Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0834EJ0101 Rev.1.01 Apr 15, 2013 Page 3 of 6 μPA2672T1R DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE -12 -100 VGS = –4.5 V Pulsed –2.5 V -8 -6 –1.8 V -4 TA = 150°C 75°C 25°C –55°C -10 ID - Drain Current - A ID –Drain Current - A -10 -1 -0.1 -0.01 -2 Pulsed VDS = –10 V -0.001 -0 -0.0001 -0 -0.5 -1 -1.5 -0 -1.5 -2 GATE TO SOURCE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs. CHANNEL TEMPERATURE DRAIN CURRENT -0.8 -0.6 -0.4 Pulsed VDS = –10 V ID = –1 mA -0.2 -0 0 50 100 150 1000 100 10 TA = 125°C 75°C 25°C –25°C 1 S -1 -50 0.1 0.01 -0.01 Pulsed VDS = –10 V -0.1 Tch - Channel Temperature - °C -1 -10 -100 ID – Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 200 Pulsed 150 VGS = –1.8 V 100 –2.5 V 50 –4.5 V 0 -0.1 -1 -10 ID - Drain Current - A R07DS0834EJ0101 Rev.1.01 Apr 15, 2013 -100 RDS(on) – Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ -1 VGS - Gate to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) – Gate to Source Cut-off Voltage - V VDS - Drain to Source Voltage - V -0.5 200 Pulsed ID = –2.0 A 150 100 50 0 -0 -2 -4 -6 -8 VGS - Gate to Source Voltage - V Page 4 of 6 μPA2672T1R 160 Pulsed 140 VGS = –1.8 V ID = –2.0 A 120 100 80 60 40 –4.5 V –2.0 A –2.5 V –2.0 A 20 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF 0 1000 Ciss Coss 100 Crss VGS = 0 V f = 1.0 MHz 10 -50 0 50 100 150 -0.1 -1 Tch - Channel Temperature - °C -100 VDS – Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 -25 VDS - Drain to Source Voltage - V td(on), tf, td(off), tr - Switching Time -μs -10 td(off) tf 10 td(on) VDD = –6 V VGS = –4.0 V tr -5 VDD = –9.6 V –6.0 V –3.6 V -20 VDS -15 -3 -10 -2 -5 -1 ID = –4.0 A RG = 6 Ω 1 -4 VGS -0 0.1 1 10 100 ID - Drain Current - A -0 0 1 2 3 4 5 6 QG - Gate Charge - nC IF - Diode Forward Current – A SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed 10 VGS = 0 V 1 0.1 0.01 0 0.5 1 1.5 VF(S–D) - Drain to Source Voltage - V R07DS0834EJ0101 Rev.1.01 Apr 15, 2013 Page 5 of 6 VGS - Gate to Source Voltage - V RDS(on) –Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE μPA2672T1R Package Drawings (Unit: mm) 6pinHUSON2020 0.25±0.05 2±0.1 A ▼ RENESAS Package code：PWSN0006JD-A B 1.7±0.05 4 5 6 ▼ 3 0.05 S 0 to 0.01 0.75 MAX. 0.2±0.03 0.7±0.04 3 0.3±0.05 ▼ 1：Source1 2：Gate1 6：Drain1 S 1±0.05 2±0.1 0.3 6 2 1 0.05 M S A B 4：Source2 5：Gate2 3：Drain2 0.65±0.03 Equivalent Circuit (1/2 circuit) Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. R07DS0834EJ0101 Rev.1.01 Apr 15, 2013 Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. 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