PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA821TF OUTLINE DIMENSIONS (Units in mm) LOW NOISE: NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA • HIGH GAIN: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA • SMALL PACKAGE STYLE: 2 NE856 die in a 2 mm x 1.25 mm x 0.6 mm package Package Outline TS06 2.1 ± 0.1 1.25 ± 0.1 1 0.65 2.0 ± 0.2 2 1.3 6 R81 • +0.10 5 3 DESCRIPTION 0.6 ± 0.1 The UPA821TF has two built-in low-voltage transistors which are designed for low-noise amplification in the VHF to UHF band. The two die are chosen from adjacent locations on the wafer. These features combined with the pin configuration make this device ideal for balanced or mirrored applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The thinner package style allows for higher density designs. 0.22 - 0.05 (All Leads) 4 0.45 0.13 ± 0.05 0 ~ 0.1 PIN CONFIGURATION (Top View) B1 E2 6 B2 5 4 Q1 1 C1 Note: Q2 2 3 E1 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) C2 Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS UPA821TF TS06 PARAMETERS AND CONDITIONS UNITS ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA fT Gain Bandwidth at VCE = 3 V, IC = 7 mA Cre Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz pF |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB hFE1/hFE2 hFE ratio, VCE = 3 V, Ic = 7 mA MIN TYP 1.0 1.0 70 GHz MAX 3.0 140 4.5 0.7 7 1.2 0.85 1.5 9 2.5 1.0 hFE1 = Smaller hFE value between Q1 and Q2 hFE2 = Larger hFE value between Q1 and Q2 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter. California Eastern Laboratories UPA821TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 12 VEBO Emitter to Base Voltage V 3 IC Collector Current mA 100 PT Total Power Dissipation 1 Die 2 Die2 mW mW 150 200 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1.Operation in excess of any one of these parameters may result in permanent damage. 2.When operating both devices, the power dissipation for either device should not exceed 110 mW. TYPICAL PERFORMANCE CURVES (TA = 25˚C) COLLECTOR CURRENT vs. DC BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE VCE = 3 V 200 2 El Collector Current, lc (mA) Total Power Dissipation, PT (mW) 20 em en ts Pe in rE To t al lem en t 100 0 25 50 100 0.5 0 150 1.0 Ambient Temperature, TA (°C) DC Base Voltage, VBE (V) COLLECTOR CURRENT vs. EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 5.0 lB=160 µA f = 1 MHz 140 µA 2.0 20 DC Current Gain,hFE Collector Current, lc (mA) 10 120 µA 100 µA 15 80 µA 10 60 µA 40 µA 5 1.0 0.5 0.2 20 µA 0.1 0 5 Collector to Emitter Voltage, VCE (V) 10 1 2 5 10 20 Collector Current, lc (mA) 50 UPA821TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. COLLECTOR CURRENT 15 VCE = 3 V f = 1 GHz Insertion Power Gain, |S21E|2 (dB) Gain Bandwidth Product, fT (GHz) 20 10 5 2 1 1 5 10 5 0.5 50 1 5 10 50 Collector Current, lc (mA) Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. FREQUENCY 100 24 6 Insertion Power Gain, |S21E|2 (dB) VCE = 3 V f = 1 GHz Noise Figure, NF (dB) 10 0 0.5 4 2 VCE = 3 V lc = 7 mA 20 16 12 8 4 0 0 0.5 1.0 5.0 10 50 100 Collector Current, lc (mA) 5.0 f = 1 MHz 2.0 1.0 0.5 0.2 0.1 1 2 5 10 20 Collector to Base Voltage, VCB (V) 0.1 0.2 0.5 1.0 2.0 Frequency, f (GHz) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Feedback Capacitance, CRE (pF) VCE = 3 V f = 1 GHz 50 5.0 UPA821TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 1 mA, Z0 = 50 Ω FREQUENCY (GHz) .10 .20 .30 .40 .50 .60 .70 .80 .90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG .97 .94 .90 .86 .82 .79 .76 .74 .72 .71 .70 .71 .72 .75 .78 .81 S21 ANG -20.45 -40.17 -59.57 -77.29 -94.54 -110.15 -124.06 -136.61 -148.19 -158.16 -175.72 162.88 151.31 136.95 117.97 103.52 MAG 2.38 2.31 2.25 2.10 2.03 1.92 1.80 1.69 1.59 1.48 1.30 1.09 .97 .83 .66 .54 S12 ANG 162.85 148.19 135.26 123.99 113.53 104.19 95.54 87.82 80.80 74.49 63.28 49.18 41.14 31.08 18.15 10.02 MAG .04 .08 .11 .13 .15 .16 .16 .16 .16 .16 .15 .13 .12 .11 .13 .19 S22 ANG MAG ANG 76.56 63.82 52.97 43.63 36.13 29.28 23.65 19.18 15.47 12.65 8.37 7.58 11.56 23.61 45.08 50.48 .98 .94 .89 .83 .78 .74 .70 .67 .65 .64 .61 .59 .58 .57 .57 .58 -8.59 -16.05 -22.20 -27.30 -31.16 -34.67 -37.55 -40.06 -42.54 -44.88 -49.79 -57.73 -64.34 -74.83 -95.23 -118.13 Q2 VCE = 3 V, IC = 1 mA, Z0 = 50 Ω FREQUENCY (GHz) .10 .20 .30 .40 .50 .60 .70 .80 .90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG .97 .93 .89 .84 .80 .76 .74 .71 .69 .68 .67 .67 .68 .69 .72 .75 S21 ANG -20.79 -40.50 -59.73 -76.87 -93.28 -107.72 -120.25 -131.32 -141.35 -150.05 -165.04 176.90 166.97 154.69 137.73 124.46 MAG 2.52 2.43 2.35 2.20 2.11 1.99 1.85 1.74 1.64 1.53 1.36 1.17 1.06 .94 .79 .68 S12 ANG 162.21 147.42 134.45 123.37 113.14 104.15 96.02 88.78 82.34 76.48 66.07 52.95 45.23 35.40 21.71 11.96 MAG .04 .08 .11 .13 .14 .15 .16 .15 .15 .15 .14 .13 .13 .14 .21 .30 S22 ANG MAG ANG 76.22 63.75 53.38 44.64 38.01 32.06 27.52 24.29 21.95 20.46 19.44 24.64 32.01 44.56 55.71 51.65 .98 .93 .87 .81 .76 .71 .68 .65 .62 .60 .57 .53 .51 .48 .45 .46 -8.81 -16.39 -22.34 -27.24 -30.90 -34.29 -36.96 -39.46 -41.97 -44.52 -50.06 -59.83 -68.26 -82.95 -114.70 -152.23 UPA821TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 3 mA, Z0 = 50 Ω FREQUENCY (GHz) .10 .20 .30 .40 .50 .60 .70 .80 .90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG .90 .83 .75 .70 .65 .62 .60 .59 .59 .59 .59 .61 .63 .66 .70 .75 S21 ANG -29.42 -56.61 -82.38 -104.35 -122.97 -138.09 -150.60 -161.35 -170.46 -178.60 167.50 150.72 141.52 130.09 114.27 102.28 MAG 6.73 6.15 5.66 5.08 4.52 4.00 3.57 3.21 2.90 2.65 2.25 1.82 1.61 1.38 1.10 .91 S12 ANG 156.08 138.83 124.38 112.82 102.90 94.98 88.01 82.00 76.74 71.87 62.99 51.53 44.61 35.44 21.83 10.82 MAG .04 .07 .09 .10 .11 .11 .11 .11 .12 .12 .12 .13 .14 .15 .19 .22 S22 ANG MAG ANG 70.94 55.92 46.12 39.45 35.38 32.50 30.78 30.02 29.88 30.03 31.42 34.65 36.98 39.97 42.08 41.10 .93 .82 .70 .61 .54 .49 .45 .42 .40 .38 .36 .33 .32 .31 .31 .33 -16.82 -29.40 -37.28 -42.73 -45.93 -48.61 -50.55 -52.19 -54.08 -55.78 -59.72 -67.05 -73.46 -84.11 -105.22 -128.59 Q2 VCE = 3 V, IC = 3 mA, Z0 = 50 Ω FREQUENCY (GHz) .10 .20 .30 .40 .50 .60 .70 .80 .90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG .90 .82 .73 .67 .62 .59 .57 .56 .55 .54 .55 .56 .57 .60 .64 .68 S21 ANG -29.30 -56.11 -80.85 -101.56 -118.49 -131.80 -142.87 -152.14 -159.99 -166.88 -178.59 167.41 159.71 149.93 136.23 125.06 MAG 6.71 6.09 5.56 4.95 4.38 3.86 3.44 3.11 2.82 2.59 2.21 1.84 1.66 1.45 1.20 1.02 S12 S22 ANG MAG ANG MAG ANG 155.29 137.78 123.40 111.97 102.51 94.93 88.40 82.68 77.69 73.06 64.68 53.63 46.97 37.59 23.63 11.49 .04 .07 .09 .10 .11 .11 .11 .12 .12 .13 .13 .15 .17 .19 .25 .31 71.05 56.98 48.29 42.87 39.94 38.27 37.56 37.77 38.47 39.41 41.56 45.41 47.04 48.39 47.57 42.77 .93 .81 .68 .59 .52 .47 .43 .40 .38 .36 .32 .28 .25 .22 .19 .23 -16.80 -28.76 -35.65 -40.13 -42.64 -44.51 -45.87 -47.30 -48.65 -50.22 -54.00 -62.05 -70.04 -85.71 -125.28 -169.77 UPA821TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 7 mA, Z0 = 50 Ω FREQUENCY (GHz) S11 MAG .10 .20 .30 .40 .50 .60 .70 .80 .90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 .79 .67 .59 .55 .52 .52 .51 .51 .52 .52 .54 .56 .58 .61 .66 .71 S21 ANG -44.32 -82.73 -113.49 -134.72 -150.16 -161.98 -171.56 -179.64 173.30 167.06 156.05 142.49 134.85 125.10 111.51 100.68 MAG S12 ANG 13.71 11.45 9.41 7.67 6.37 5.44 4.71 4.17 3.73 3.38 2.83 2.28 2.02 1.72 1.37 1.14 MAG 146.95 126.15 111.03 100.87 93.24 87.20 81.95 77.28 73.14 69.28 61.95 52.20 46.08 37.91 25.17 14.21 .04 .05 .07 .07 .08 .08 .09 .10 .10 .11 .12 .14 .16 .18 .22 .25 S22 ANG MAG ANG 64.19 50.70 45.71 44.09 43.89 44.29 44.90 45.68 46.53 47.24 47.51 47.48 47.00 45.50 41.98 37.45 .84 .64 .49 .40 .35 .31 .28 .26 .24 .23 .21 .19 .18 .18 .19 .23 -28.71 -44.98 -52.71 -57.18 -59.82 -62.08 -63.86 -65.85 -67.95 -70.01 -75.34 -85.78 -94.72 -108.59 -134.34 -157.18 Q2 VCE = 3 V, IC = 7 mA, Z0 = 50 Ω FREQUENCY (GHz) S11 MAG .10 .20 .30 .40 .50 .60 .70 .80 .90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 .78 .64 .55 .50 .48 .47 .46 .46 .46 .46 .47 .50 .51 .54 .59 .64 S21 ANG -43.98 -81.06 -109.37 -128.61 -142.36 -152.78 -161.04 -168.03 -173.82 -179.09 171.98 160.99 154.69 146.49 134.74 124.73 MAG 13.56 11.15 9.00 7.29 6.05 5.16 4.49 3.98 3.57 3.24 2.75 2.25 2.02 1.75 1.44 1.23 S12 S22 ANG MAG ANG MAG ANG 145.65 124.63 109.90 100.27 93.07 87.38 82.41 77.92 74.02 70.24 63.22 53.72 47.63 39.20 26.11 14.52 .04 .05 .07 .07 .08 .09 .10 .11 .12 .13 .15 .18 .20 .23 .28 .33 65.30 53.73 50.12 49.49 50.25 50.94 51.76 52.62 53.24 53.84 53.97 53.24 52.05 49.60 44.37 38.05 .83 .62 .47 .39 .33 .29 .26 .23 .21 .19 .16 .12 .09 .07 .09 .18 -28.08 -42.31 -48.09 -50.66 -51.72 -52.25 -52.80 -53.35 -54.00 -55.03 -58.07 -66.67 -78.75 -110.79 174.41 146.24 ORDERING INFORMATION PART NUMBER UPA821TF-T1 QUANTITY 3000 PACKAGING Tape & Reel EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE