DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC358 LOW POWER DUAL OPERATIONAL AMPLIFIERS DESCRIPTION FEATURES The µPC358 is a dual operational amplifier which is • Internally frequency compensation designed to operate from a single power supply over a • Wide output voltage swing V– to V+ –1.5 V wide range of voltages. Operation from split power • Common mode input voltage range includes V– supplies is also possible and the power supply current • Wide supply voltage range drain is very low. Further advantage, the input common- 3 V to 30 V (Single) mode voltage range includes ground in the linear mode. ±1.5 V to ±15 V (Split) • Output short circuit protection EQUIVALENT CIRCUIT (1/2 Circuit) 6 µA PIN CONFIGURATION (Marking Side) OUT1 Q5 Q2 II Q4 CC Q11 Q10 V+ 7 OUT2 – + II1 Q7 2 2 + – OUT IN 8 1 RSC Q8 1 Q6 Q3 Q1 µ PC358C, 358G2 V+ 100 µ A 6 µA Q13 IN1 3 6 II2 V– 4 5 IN2 Q12 50 µ A Q9 µ PC358HA V– 6 7 8 9 + II1 5 V 4 II2 3 OUT2 2 IN1 V– IN2 V + 1 2 + – OUT1 1 – + ORDERING INFORMATION Part Number Package µPC358C 8-pin plastic DIP (300 mil) µPC358G2 8-pin plastic SOP (225 mil) µPC358HA 9-pin slim SIP The information in this document is subject to change without notice. Document No. G11765EJ4V0DS00 (4th edition) (Previous No. IC-1284) Date Published May 1997 N Printed in Japan The mark shows major revised points. © 1997 µPC358 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Voltage between V+ and Symbol V– V+ Note 1 –0.3 to +32 V ±32 V VI V––0.3 to V–+32 V Note 3 VO V––0.3 V C Package Note 4 PT G2 Package HA Package Input Voltage Note 2 Output Voltage Power Dissipation Unit VID Differential Input Voltage Output Short Circuit Duration – Ratings V– to V++0.3 350 mW Note 5 440 mW Note 4 350 mW Note 6 Indefinite s Operating Ambient Temperature TA –20 to +80 °C Storage Temperature Tstg –55 to +125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction independent of the magnitude of V+. Either input signal should not be allowed to go negative by more than 0.3 V. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –5.0 mW/°C when operating ambient temperature is higher than 55 °C. 5. Thermal derating factor is –4.4 mW/°C when operating ambient temperature is higher than 25 °C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage (Split) Supply Voltage (V– = GND) Symbol MIN. V± V+ TYP. MAX. Unit ±1.5 ±15 V +3 +30 V ELECTRICAL CHARACTERISTICS (TA = 25 °C, V+ = +5 V, V– = GND) Parameter Symbol MIN. MAX. Unit VIO ±2 ±7 mV Input Offset Current IIO ±5 ±50 nA IB 45 250 nA Note 7 Large Signal Voltage Gain Supply Current RS = 0 Ω TYP. Input Offset Voltage Input Bias Current AV RL ≥ 2 kΩ ICC RL = ∞, IO = 0 A, Both Amplifiers 25 100 0.7 Common Mode Rejection Ratio CMR 65 70 Supply Voltage Rejection Ratio SVR 65 100 Output Voltage Swing Common Mode Input Voltage Range Output Current (SOURCE) Output Current (SINK) Channel Separation Note 7. 2 Conditions VO RL = 2 kΩ (Connect to GND) VICM IO SOURCE IO SINK VIN+ = +1 V, VIN– V/mA 1.2 mA dB dB 0 V+ –1.5 V 0 V+ –1.5 V =0V 20 40 mA VIN– = +1 V, VIN+ = 0 V 10 20 mA VIN– = +1 V, VIN+ = 0 V, VO = 200 mV 12 50 µA 120 dB f = 1 kHz to 20 kHz Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. µPC358 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25 °C, TYP.) SUPPLY CURRENT POWER DISSIPATION 4 500 µ PC358G2 ICC - Supply Current - mA PT - Total Power Dissipation - mW 600 400 300 µPC358C, 358HA 200 100 V+ A ICC 3 – + 2 1 TA = 0 to 70 °C TA = –20 °C 0 0 20 40 60 80 100 TA - Operating Ambient Temperature - °C 10 20 30 40 V+ - Supply Voltage - V (V– = GND) INPUT OFFSET VOLTAGE INPUT OFFSET VOLTAGE 3 5 + V =5V 2 TA = 25 ˚C 1 0 0 VIO - Input Offset Voltage - mV VIO - Input Offset Voltage - mV 4 3 2 1 0 –1 –2 –3 –4 –50 0 50 100 TA - Operating Ambient Temperature - ˚C 10 20 30 40 – V - Supply Voltage - V (V = GND) + INPUT BIAS CURRENT INPUT BIAS CURRENT 100 75 50 T A = 25 °C 25 0 10 20 30 40 V+ - Supply Voltage - V (V– = GND) IB - Input Bias Current - nA IB - Input Bias Current - nA 100 80 V+ = +15 V V– = GND 60 40 20 0 –50 0 50 100 TA - Operating Ambient Temperature - ˚C 3 µPC358 OPEN LOOP FREQUENCY RESPONSE 140 10 MΩ – + 60 Aυ - Open Loop Voltage Gain - dB IO SHORT - Output Short Circuit Current - mA OUTPUT SHORT CIRCUIT CURRENT 70 IO SHORT 50 40 30 –20 0 20 60 40 TA - Ambient Temperature - ˚C 120 + 60 V+ = 30 V 40 V+ = 10 to 15 V 20 1 VO - Output Voltage Swing -Vp-p AV - Open Loop Voltage Gain - dB 20 RL = 20 kΩ 120 RL = 2 kΩ 80 40 15 VIN +7 V + VO 2 kΩ 5 3 5 10 k 30 50 100 k 300 500 1 M f - Frequency - Hz VOLTAGE FOLLOWER PULSE RESPONSE COMMON MODE REJECTION RATIO 120 VIN VO Input Voltage - V Output Voltage - V 4 100 80 60 40 20 0 100 +15 V – 10 0 1k 10 20 30 40 V - Supply Voltage - V (V– = GND) 100 kΩ 1 kΩ + CMR - Common Mode Rejection Ratio - dB 10 100 1 k 10 k 100 k 1 M 10 M f - Frequency - Hz LARGE SIGNAL FREQUENCY RESPONSE 160 0 VO – V+/2 80 OPEN LOOP VOLTAGE GAIN 4 V+ VIN 100 0 80 0.1 µF 1k 10 k 100 k f - Frequency - Hz 1M RL ≥ 2 kΩ + V = 15 V 3 2 1 0 3 2 1 0 20 40 t - Time - µs 60 80 µPC358 SLEW RATE SR– 0.3 SR - Slew Rate - V/µ s SR+ 0.2 0.1 V± = ±15 V VO = ±10 V 0 0 50 100 –50 TA - Operating Ambient Temperature - ˚C OUTPUT SINK CURRENT LIMIT 100 VO - Output Voltage - V 50 30 20 10 5 3 2 1 0.5 0.3 0.2 V+ V+/2 0.1 0.05 0.03 0.02 0.01 0.01 – + 0.03 0.05 0.1 0.3 0.5 1 2 3 5 V+ = +15 V IO SINK VO 10 20 30 50 100 10 20 30 50 100 IO SINK - Output Sink Current - mA OUTPUT SOURCE CURRENT LIMIT 5 V+ = +15 V ∆VO - Output Voltage to V+ - V V+ 4 V+/2 3 ∆VO + – IO SOURCE 2 1 0 0.01 0.03 0.05 0.1 0.3 0.5 1 2 3 5 IO SOURSE - Output Source Current - mA 5 µPC358 PACKAGE DRAWINGS 8 PIN PLASTIC DIP (300 mil) 8 5 1 4 A K I L P J C H G B M R F D N M NOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. 2) ltem "K" to center of leads when formed parallel. ITEM MILLIMETERS INCHES A B 10.16 MAX. 1.27 MAX. 0.400 MAX. 0.050 MAX. C 2.54 (T.P.) 0.100 (T.P.) D 0.50±0.10 0.020 +0.004 –0.005 F 1.4 MIN. 0.055 MIN. G H 3.2±0.3 0.51 MIN. 0.126±0.012 0.020 MIN. I J 4.31 MAX. 5.08 MAX. 0.170 MAX. 0.200 MAX. K 7.62 (T.P.) 0.300 (T.P.) L 6.4 0.252 M 0.25 +0.10 –0.05 0.010 +0.004 –0.003 N 0.25 0.01 P 0.9 MIN. 0.035 MIN. R 0~15° 0~15° P8C-100-300B,C-1 6 µPC358 8 PIN PLASTIC SOP (225 mil) 8 5 P detail of lead end 4 1 A H J E K F G I B L N C D M M NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS INCHES A 5.37 MAX. 0.212 MAX. B 0.78 MAX. 0.031 MAX. C 1.27 (T.P.) 0.050 (T.P.) D 0.40 +0.10 –0.05 0.016 +0.004 –0.003 E 0.1±0.1 0.004±0.004 F 1.8 MAX. 0.071 MAX. G 1.49 0.059 H 6.5±0.3 0.256±0.012 I 4.4 0.173 J 1.1 0.043 K 0.15 +0.10 –0.05 0.006 +0.004 –0.002 L 0.6±0.2 0.024 +0.008 –0.009 M 0.12 0.005 N 0.10 0.004 P 3° +7° –3° 3° +7° –3° S8GM-50-225B-4 7 µPC358 9 PIN PLASTIC SLIM SIP A N M 1 9 Y C F Q K V H G M J U Z NOTE Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. 8 ITEM MILLIMETERS INCHES A 22.86 MAX. 0.900 MAX. C 1.1 MIN. 0.043 MIN. F 0.5±0.1 0.02 +0.004 –0.005 G 0.25 0.010 H 2.54 0.100 J 1.27 MAX. 0.050 MAX. K 0.51 MIN. 0.020 MIN. M 5.08 MAX. 0.200 MAX. N 2.8±0.2 0.11+0.009 –0.008 Q 5.75 MAX. 0.227 MAX. U 1.5 MAX. 0.059 MAX. V 0.25 +0.10 –0.05 0.01+0.004 –0.003 Y 3.2±0.5 0.126±0.02 Z 1.1 MIN. 0.043 MIN. P9HA-254B-1 µPC358 RECOMMENDED SOLDERING CONDITIONS When soldering these products, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E). Type of Surface Mount Device µPC358G2: 8-pin plastic SOP (225 mil) Process Conditions Symbol Peak temperature: 230 °C or below (Package surface temperature), Reflow time: 30 seconds or less (at 210 °C or higher), Maximum number of reflow processes: 1 time. IR30-00-1 Vapor phase soldering Peak temperature: 215 °C or below (Package surface temperature), Reflow time: 40 seconds or less (at 200 °C or higher), Maximum number of reflow processes: 1 time. VP15-00-1 Wave soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, Maximum number of flow processes: 1 time, Pre-heating temperature: 120 °C or below (Package surface temperature). WS60-00-1 Partial heating method Pin temperature: 300 °C or below, Heat time: 3 seconds or less (Per each side of the device). Infrared ray reflow – Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or the device will be damaged by heat stress. Types of Through-hole Device µPC358C: 8-pin plastic DIP (300 mil) µPC358HA: 9-pin slim SIP Process Wave soldering (only to leads) Partial heating method Conditions Solder temperature: 260 °C or below, Flow time: 10 seconds or less. Pin temperature: 300 °C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. 9 µPC358 REFERENCE DOCUMENTS QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES C11531E SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL C10535E IC PACKAGE MANUAL C10943X GUIDE TO QUALITY ASSUARANCE FOR SEMICONDUCTOR DEVICES MEI-1202 SEMICONDUCTORS SELECTION GUIDE X10679E NEC SEMICONDUCTOR DEVICE RELIABILITY/ IEI-1212 QUALITY CONTROL SYSTEM - STANDARD LINEAR IC 10 µPC358 [MEMO] 11 µPC358 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2