DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4572 LOW SUPPLY VOLTAGE, ULTRA LOW-NOISE, HIGH SPEED, WIDE BAND, LOW IB DUAL OPERATIONAL AMPLIFIER DESCRIPTION The µPC4572 is a dual wide band, ultra low noise operational amplifier designed for low supply voltage operation Of +4 V to +14 V single supply and ±2 V to ±7 V split supplies. Using high hFE PNP transistors for the input circuit, Input bias current and input equivalent noise are better than conventional wide band operational amplifier. The µPC4572 is an excellent choice for preamplifiers and active filters in audio, instrumentation, and communication circuit. FEATURES • • • • Ultra low noise: en = 4.0 nV/ Hz Low input bias current: 100 nA High slew rate: 6 V/ µs Low supply voltage: ±2 V to ±7 V (Split) +4 V to +14 V (Single) • Internal frequency compensation ★ ORDERING INFORMATION PIN CONFIGURATION (Top View) Part Number Package µPC4572C µPC4572C(5) µPC4572G2 µPC4572G2(5) µPC4572HA µPC4572HA(5) µPC4572C, 4572C(5), 4572G2, 4572G2(5) 8-pin plastic DIP (7.62 mm (300) ) 8-pin plastic DIP (7.62 mm (300) ) 8-pin plastic SOP (5.72 mm (225) ) 8-pin plastic SOP (5.72 mm (225) ) 9-pin plastic slim SIP 9-pin plastic slim SIP 8 V+ OUT1 1 1 − + I I1 2 7 OUT2 2 + − I N1 3 EQUIVALENT CIRCUIT (1/2 Circuit) V − 6 I I2 5 I N2 4 V+ R1 µ PC4572A,4572HA(5) Q7 Q5 Q14 Q15 Q6 Q3 R2 Q4 C1 R3 2 3 4 5 6 7 8 9 OUT Q10 R4 1 V+ Q12 R11 OUT 2 R9 − R8 R6 I I2 C2 I N2 R5 V IN I I1 Q9 I N1 Q2 2 + − OUT1 Q1 1 − + Q16 R7 V+ Q13 Q8 II Q11 R10 Q17 V− The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15972EJ4V0DS00 (4th edition) (Previous No. IC-1864) Date Published February 2002 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1986 µPC4572 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter + Voltage between V and V Symbol − Note1 V −V + Differential Input Voltage Input Voltage VID Note2 Output Voltage − C Power Dissipation Package Note4 Unit −0.3 to +15 V ±10 V − + − + V −0.3 to V +0.3 VI Note3 Ratings V VO V −0.3 to V +0.3 V PT 350 mW G2 Package Note5 440 mW HA Package Note4 350 mW 10 sec Output Short Circuit Duration Note6 Operating Ambient Temperature TA −20 to +80 °C Storage Temperature Tstg −55 to +125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage, which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –5.0 mW/°C when ambient temperature is higher than 55°C. 5. Thermal derating factor is –4.4 mW/°C when ambient temperature is higher than 25°C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage (Split) − Symbol MIN. TYP. MAX. Unit V± ±2 ±5 ±7 V + +4 +5/ +12 +14 V Supply Voltage (V = GND) V Output Current IO ±10 mA Capacitive Load (AV = +1) CL 100 pF 2 Data Sheet G15972EJ4V0DS µPC4572 µPC4572C, µPC4572G2, µPC4572HA ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±5 V) Parameter Input Offset Voltage Input Offset Current Input Bias Current Symbol Note Large Signal Voltage Gain Supply Current MIN. RS ≤ 50 Ω TYP. MAX. Unit ±0.3 ±5 mV IIO ±10 ±100 nA IB 100 400 nA 7 mA VIO Note Conditions AV RL ≥ 2 kΩ , VO = ±2 V ICC IO = 0 A, Both Amplifiers 10000 100000 4.5 Common Mode Rejection Ratio CMR 70 90 dB Supply Voltage Rejection Ratio SVR 70 85 dB Output Voltage Swing Vom ±3.3 ±3.7 V Common Mode Input Voltage Range VICM Output Short Circuit Current IO short RL ≥ 10 kΩ RL ≥ 2 kΩ Slew Rate SR Gain Band Width Product ±3.5 ±4 V RL = 0 ±15 ±20 mA AV = 1, RL ≥ 2 kΩ 3.5 6 V/ µs fO = 100 kHz 10 16 MHz Unity Gain Frequency funity open loop 9 MHz Phase Margin φunity open loop 60 degree Total Harmonic Distortion THD VO = 1 Vr.m.s., f = 20 Hz to 20 kHz (Fig.1) 0.002 % RIAA (Fig.2) 0.8 µVr.m.s. FLAT+JIS A, RS = 100 Ω (Fig.3) 0.5 fO = 10 Hz 4.5 Input Equivalent Noise Voltage GBW ±3.0 ±3.5 Vn Input Equivalent Noise Voltage Density en Input Equivalent Noise Current Density in Channel Separation Average VIO Temperature Drift 0.65 nV/ Hz fO = 1 kHz 4.0 fO = 1 kHz 0.7 pA/ Hz f = 20 Hz to 20 kHz 120 dB ±2 µV/°C ∆VIO/ ∆T Note Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = 5 V, V− = GND) Parameter Input Offset Voltage Input Offset Current Input Bias Current Symbol Note Large Signal Voltage Gain Supply Current RS ≤ 50 Ω MAX. Unit ±5 mV ±10 ±100 nA IB 100 400 nA 6 mA AV RL ≥ 2 kΩ ICC IO = 0 A, Both Amplifiers CMR Supply Voltage Rejection Ratio SVR VOH RL ≥ 2 kΩ (RL to 1/2 V ) Output Voltage (Low) VOL RL ≥ 2 kΩ (RL to 1/2 V ) Common Mode Input Voltage Range VICM Slew Rate SR Gain Band Width Product TYP. ±0.3 Common Mode Rejection Ratio Output Voltage (High) MIN. IIO VIO Note Conditions + 8000 80000 60 75 dB 60 70 dB 3.2 3.5 V 4 + 1.3 1.5 AV = 1 GBW 1.6 V 3.5 V 4 V/ µs 12 MHz Note Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. Data Sheet G15972EJ4V0DS 3 µPC4572 ★ µPC4572C(5), µPC4572G2(5), µPC4572HA(5) ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±5 V) Parameter Input Offset Voltage Input Offset Current Input Bias Current Symbol VIO Note Note Conditions RS ≤ 50 Ω IIO IB Large Signal Voltage Gain AV RL ≥ 2 kΩ, VO = ±2 V Supply Current ICC IO = 0 A, Both Amplifiers Common Mode Rejection Ratio CMR Supply Voltage Rejection Ratio SVR Output Voltage Swing Vom Common Mode Input Voltage Range VICM Output Short Circuit Current IO short Slew Rate SR Gain Band Width Product MIN. GBW 30000 TYP. MAX. Unit ±0.3 ±1.5 mV ±10 ±50 nA 100 200 nA 5.5 mA 100000 4.5 75 90 dB 70 85 dB RL ≥ 10 kΩ ±3.45 ±3.7 V RL ≥ 2 kΩ ±3.3 ±3.5 +3.8 −3.7 ±4 V RL = 0 ±15 ±20 mA AV = 1, RL ≥ 2 kΩ 3.5 6 V/ µs fO = 100 kHz 10 16 MHz Unity Gain Frequency funity open loop 9 MHz Phase Margin φunity open loop 60 degree Total Harmonic Distortion THD VO = 1 Vr.m.s., f = 20 Hz to 20 kHz (Fig.1) Input Equivalent Noise Voltage Vn Input Equivalent Noise Voltage Density en Input Equivalent Noise Current Density in Channel Separation Average VIO Temperature Drift % 0.002 µVr.m.s. RIAA (Fig.2) 0.8 FLAT+JIS A, RS = 100 Ω (Fig.3) 0.5 fO = 10 Hz 4.5 fO = 1 kHz 4.0 fO = 1 kHz 0.7 f = 20 Hz to 20 kHz 120 dB ±2 µV/°C ∆VIO/ ∆T 0.65 nV/ Hz pA/ Hz Note Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. ELECTRICAL CHARACTERISTICS (TA = 25°C, V+ = 5 V, V− = GND) Parameter Input Offset Voltage Input Offset Current Input Bias Current Symbol VIO Note Note Conditions MIN. RS ≤ 50 Ω TYP. MAX. Unit ±0.3 ±1.5 mV IIO ±10 ±50 nA IB 100 200 nA 5 mA Large Signal Voltage Gain AV RL ≥ 2 kΩ , Supply Current ICC IO = 0 A, Both Amplifiers 40000 80000 4 Common Mode Rejection Ratio CMR 65 75 dB Supply Voltage Rejection Ratio SVR 60 70 dB Output Voltage (High) VOH RL ≥ 2 kΩ (RL to 1/2 V ) 3.4 3.5 V Output Voltage (Low) VOL RL ≥ 2 kΩ (RL to 1/2 V ) Common Mode Input Voltage Range VICM Slew Rate SR Gain Band Width Product + + 1.3 1.2 AV = 1 GBW 1.45 V 3.8 V 4 V/ µs 12 MHz Note Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. 4 Data Sheet G15972EJ4V0DS µPC4572 MEASUREMENT CIRCUITS Fig. 1 Total Harmonic Distortion Measurement Circuit − VO = 1 Vr.m.s. + 2 kΩ Fig. 2 Noise Measurement Circuit (RIAA) 2400 pF 8200 pF 610 Ω 47 µ F + − 30 kΩ 330 kΩ 2.2 kΩ 33 µ F 56 kΩ + + 1.5 µ F + 40 dB Amp. LPF (fO = 30 kHz) 100 kΩ VO = (36.5 dB + 40 dB) × Vn VO Vn = 76.5 dB Fig. 3 Flat Noize Measurement Circuit (FLAT + JIS A) 10 kΩ − 100 Ω JIS A + VO = 40 dB × Vn VO Vn = 40 dB RS = 100 Ω Data Sheet G15972EJ4V0DS 5 µPC4572 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.) POWER DISSIPATION OPEN LOOP FREQUENCY RESPONSE 120 500 AV - Open Loop Voltage Gain - dB PT - Total Power Dissipation - mW 600 µ PC4572G2 400 200°C/W µ PC4572C, 4572HA 300 200 227°C/W 100 0 0 20 40 60 80 V± = ±5 V 100 80 60 40 20 0 100 1 10 100 TA - Operating Ambient Temperature - ˚C V± = ±5 V RL = 10 kΩ VO± - Output Voltage - V Vom - Output Voltage Swing - Vp-p ±5 10 5 0 100 1k 10 k 100 k 1M 10 k 100 k 1 M 10 M OUTPUT CURRENT LIMIT LARGE SIGNAL FREQUENCY RESPONSE 15 1k f - Frequency - Hz ±4 ±3 VO+, IO SOURCE ±2 VO−, IO SINK ±1 0 10 M V± = ±5 V 0 10 20 30 40 IO - Output Current - mA f - Frequency - Hz SUPPLY CURRENT SUPPLY CURRENT 8 8 ICC - Supply Current - mA ICC - Supply Current - mA V± = ±5 V 6 4 2 0 −20 0 20 40 60 80 6 4 2 0 6 ±5 0 ± TA - Operating Ambient Temperature - ˚C V - Supply Voltage - V Data Sheet G15972EJ4V0DS ±10 VOLTAGE FOLLOWER PULSE RESPONSE COMMON MODE INPUT VOLTAGE RANGE 10 5 5 2.5 VO - Output Voltage - V VICM - Common Mode Input Voltage Range - V µPC4572 0 −5 −10 ±5 0 V± = ±5 V AV = 1 RL = 2 kΩ 0 −2.5 −5 ±10 0 2 8 en -Input Equivalent Noise Voltage Density - nV/ Hz Vn - Input Equivalent Noise Voltage - µ Vr.m.s. 10 1 V± = ±5 V RS = 100 Ω 6 4 2 0 100 1k 10 k 8 INPUT EQUIVALENT NOISE VOLTAGE DENSITY INPUT EQUIVALENT NOISE VOLTAGE (FLAT+JIS A) 100 V± = ±5 V 10 6 t - Time - µ s V± - Supply Voltage - V 0.1 4 100 k 10 RS - Source Resistance - Ω 100 1k 10 k 100 k f - Frequency - Hz TOTAL HARMONIC DISTORTION THD - Total Harmonic Distortion - % 1 V± = ±5 V VO = 3 Vr.m.s. AV = 1 RL = 2 kΩ 0.1 0.01 0.001 0.0001 10 100 1k 10 k 100 k f - Frequency - Hz Data Sheet G15972EJ4V0DS 7 µPC4572 PACKAGE DRAWINGS (Unit: mm) 8-PIN PLASTIC DIP (7.62 mm (300) ) 8 5 1 4 A K J L P I C H G B M R F D N M NOTES 1. Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. 2. ltem "K" to center of leads when formed parallel. ITEM MILLIMETERS A B 10.16 MAX. 1.27 MAX. C 2.54 (T.P.) D 0.50–0.10 F 1.4 MIN. G 3.2–0.3 H 0.51 MIN. I J 4.31 MAX. 5.08 MAX. K 7.62 (T.P.) L 6.4 M 0.25 +0.10 −0.05 N 0.25 P 0.9 MIN. R 0~15 P8C-100-300B,C-2 8 Data Sheet G15972EJ4V0DS µPC4572 8-PIN PLASTIC SOP (5.72 mm (225) ) 8 5 detail of lead end P 4 1 A H F I G J S B C D M L N K S M E NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS A 5.2 +0.17 −0.20 B 0.78 MAX. C 1.27 (T.P.) D 0.42 +0.08 −0.07 E 0.1–0.1 F 1.59–0.21 G 1.49 H 6.5–0.3 I 4.4–0.15 J 1.1–0.2 K 0.17 +0.08 −0.07 L 0.6–0.2 M 0.12 N 0.10 P 3 +7 −3 S8GM-50-225B-6 Data Sheet G15972EJ4V0DS 9 µPC4572 9-PIN PLASTIC SLIM SIP A N M 1 Q 9 Y V H C F K G M U J Z NOTE ITEM Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. A MILLIMETERS 22.86 MAX. C 1.1 MIN. F 0.5–0.1 G H J 0.25 2.54 K 0.51 MIN. 1.27 MAX. M 5.08 MAX. N Q 2.8–0.2 5.75 MAX. U 1.5 MAX. V 0.25 +0.10 −0.05 Y 3.2–0.5 Z 1.1 MIN. P9HA-254B-2 10 Data Sheet G15972EJ4V0DS µPC4572 ★ RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to below our document. "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" (C10535E). Type of Surface Mount Device µPC4572G2, 4572G2(5): 8-pin plastic SOP (5.72 mm (225) ) Process Infrared Ray Reflow Conditions Symbol Peak temperature: 230°C or below (Package surface temperature), IR30-00-1 Reflow time: 30 seconds or less (at 210°C or higher), Maximum number of reflow processes: 1 time. Vapor Phase Soldering Peak temperature: 215°C or below (Package surface temperature), VP15-00-1 Reflow time: 40 seconds or less (at 200°C or higher), Maximum number of reflow processes: 1 time. Wave Soldering Solder temperature: 260°C or below, Flow time: 10 seconds or less, WS60-00-1 Maximum number of flow processes: 1 time, Pre-heating temperature: 120°C or below (Package surface temperature). Partial Heating Method Pin temperature: 300°C or below, – Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the device will be damaged by heat stress. Type of Through-hole Device µPC4572C, 4572C(5): 8-pin plastic DIP (7.62 mm (300) ), µPC4572HA, 4572HA(5): 9-pin plastic slim SIP Process Conditions Wave Soldering Solder temperature: 260°C or below, (only to leads) Flow time: 10 seconds or less. Partial Heating Method Pin temperature: 300°C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. Data Sheet G15972EJ4V0DS 11 µPC4572 • The information in this document is current as of February, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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