DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation. This device is housed in a 6-pin super minimold package. And this package is able to high-density surface mounting. FEATURES • Supply voltage : VDD = 2.7 to 3.0 V (2.8 V TYP.) • Switch control voltage : Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • Low insertion loss : LINS1 = 0.27 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : LINS2 = 0.30 dB TYP. @ f = 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : LINS3 = 0.30 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference value) : ISL1 = 28 dB TYP. @ f = 0.5 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V • High isolation : ISL2 = 25 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference value) • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATIONS • L-band digital cellular or cordless telephone • PCS, W-LAN, WLL and Bluetooth TM etc. ORDERING INFORMATION Part Number µPG2012TB-E3 Package 6-pin super minimold Marking G3A Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2012TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10218EJ01V0DS (1st edition) Date Published December 2002 CP(K) Printed in Japan NEC Compound Semiconductor Devices 2002 µPG2012TB PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) G3A 3 2 1 (Bottom View) (Top View) 4 3 4 4 3 5 2 5 5 2 6 6 6 1 1 Pin No. Pin Name 1 OUTPUT1 2 GND 3 OUTPUT2 4 Vcont 5 INPUT 6 VDD TRUTH TABLE Vcont INPUT−OUTPUT1 INPUT−OUTPUT2 Low OFF ON High ON OFF ABSOLUTE MAXIMUM RATINGS (TA = +25°°C, unless otherwise specified) Parameter Symbol Ratings Unit Supply Voltage VDD +6.0 V Switch Control Voltage Vcont +6.0 V Input Power Pin +26 dBm Power Dissipation PD 150 Note mW Operating Ambient Temperature TA −45 to +85 °C Storage Temperature Tstg −55 to +150 °C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C RECOMMENDED OPERATING RANGE (TA = +25°°C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit VDD 2.7 2.8 3.0 V Switch Control Voltage (H) Vcont(H) 2.7 2.8 3.0 V Switch Control Voltage (L) Vcont(L) −0.2 0 0.2 V Supply Voltage 2 Data Sheet PG10218EJ01V0DS µPG2012TB ELECTRICAL CHARACTERISTICS (TA = +25°°C, VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss1 LINS1 f = 0.5 to 1.0 GHz − 0.27 0.50 dB Insertion Loss2 LINS2 f = 2.0 GHz − 0.30 0.50 dB Isolation1 ISL1 f = 0.5 to 2.0 GHz 24 28 − dB Input Return Loss RLin f = 0.5 to 2.5 GHz 15 20 − dB Output Return Loss RLout f = 0.5 to 2.5 GHz 15 20 − dB +17.5 +20.5 − dBm 0.1 dB Gain Compression Input Power Note Pin(0.1 dB) f = 2.0 GHz Supply Current IDD − 50 100 µA Switching Control Current Icont − 4 20 µA Note Pin(0.1dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear range. STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°°C, VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss3 LINS3 f = 2.5 GHz − 0.30 − dB Isolation2 ISL2 f = 2.5 GHz − 25 − dB 1 dB Gain Compression Input Power Note Pin(1 dB) f = 2.0 GHz − +24.0 − dBm Switching Control Speed tSW − 300 − ns Note Pin(1dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear range. Caution This device is used it is necessary to use DC cut capacitors. The value of DC cut capacitors should be chosen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. The range of recommended DC cut capacitor value is less than 100 pF. Data Sheet PG10218EJ01V0DS 3 µPG2012TB EVALUATION CIRCUIT (VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF) OUTPUT1 OUTPUT2 56 pF 56 pF 1 2 3 6 5 4 56 pF 1 000 pF 1 000 pF VDD INPUT Vcont The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 4 Data Sheet PG10218EJ01V0DS µPG2012TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD VDD 6pin SMM SPDT SW Vc1 OUTPUT1 C2 C 2 C 4 OUT 1 C1 G3A INPUT C3 C1 C1 IN C 1 C 5 C2 OUT 2 OUTPUT2 Vc2 Vcont USING THE NEC EVALUATION BOARD Symbol C1, C2, C3 C4, C5 Values 56 pF 1 000 pF Data Sheet PG10218EJ01V0DS 5 µPG2012TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 2.0±0.2 1.25±0.1 6 Data Sheet PG10218EJ01V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.9±0.1 0.1 MIN. µPG2012TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow VPS Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C : 10 seconds or less : 60 seconds or less : 120±30 seconds Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 3 times : 0.2%(Wt.) or below Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C : 215°C or below : 25 to 40 seconds : 30 to 60 seconds Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 3 times : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below IR260 VP215 WS260 Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 1 time : 0.2%(Wt.) or below Peak temperature (pin temperature) : 350°C or below Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 3 seconds or less : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10218EJ01V0DS 7 µPG2012TB Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. • The information in this document is current as of December, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 8 Data Sheet PG10218EJ01V0DS µPG2012TB SAFETY INFORMATION ON THIS PRODUCT Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. • Do not destroy or burn the product. • Do not cut or cleave off any part of the product. • Do not crush or chemically dissolve the product. • Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. 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