SILAN 3VD212600YL

3VD212600YL
3VD212600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD212600YL is a High voltage N-Channel enhancement
mode power MOS-FET chip fabricated in advanced silicon
3
epitaxial planar technology.
¾ Advanced termination scheme to provide enhanced voltageblocking capability.
1
¾ Avalanche Energy Specified
¾ Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
PAD1:GATE
¾ The chips may packaged in TO-251 type and the typical
equivalent product is 1N60A.
PAD3:SOURCE
CHIP TOPOGRAPHY
¾ The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers.
¾ Die size: 2.12mm*2.02mm.
¾ Chip Thickness: 300±20μm.
¾ Top metal: Al, Backside Metal: Ag.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
Drain Current
ID
1.0
A
Power Dissipation(TO-251 Package)
PD
28
W
TJ
-55~+150
°C
Tstg
-55~+150
°C
Operation Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Symbol
BVDSS
Test conditions
Min
Typ
Max
Unit
VGS=0V, ID=250µA
600
-
-
V
Gate Threshold Voltage
VTH
VGS= VDS, ID=250µA
2.0
-
4.0
V
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V
-
-
1.0
µA
VGS=10V, ID=0.5A
-
8.1
8.5
Ω
IGSS
VGS=±30V, VDS=0V
-
-
±100
nA
VFSD
IS=1.0A, VGS=0V
-
-
1.4
V
Static Drain- Source On State
Resistance
Gate-Source Leakage Current
Source-Drain Diode Forward On
Voltage
RDS(on)
HANGZHOU MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2008.08.23
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