VLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level e2 Very high stability Low noise High reliability Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612009 Applications • Voltage stabilization Mechanical Data Case: QuadroMELF glass case SOD80 Weight: approx. 34 mg Cathode band color: black Packaging codes/options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA ≤ 300 K/W Ptot 500 mW Z-current IZ Ptot/VZ mA Junction temperature Tj 175 °C Tstg - 65 to + 175 °C Test condition Symbol Value Unit on PC board 50 mm x 50 mm x 1.6 mm RthJA 500 K/W Power dissipation Storage temperature range Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction to ambient air Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Document Number 81759 Rev. 1.0, 15-Aug-07 Test condition Symbol IF = 200 mA VF Min Typ. Max Unit 1.5 V www.vishay.com 1 VLZ-Series Vishay Semiconductors Electrical Characteristics Zener Voltage Partnumbergroup VLZ2V4 VLZ2V7 VLZ3V0 VLZ3V3 VLZ3V6 VLZ3V9 VLZ4V3 VLZ4V7 VLZ5V1 VLZ5V6 VLZ6V2 VLZ6V8 VLZ7V5 VLZ8V2 VLZ9V1 VLZ10 VLZ11 Partnumber Dynamic Resistance ZZ at IZT Test Current Reverse Leakage Current ZZK at IZK IZT IZK mA mA IR at VR V V Ω Ω min max max max VLZ2V4A 2.33 2.52 100 2000 20 1 70 1 VLZ2V4B 2.43 2.63 100 2000 20 1 70 1 VLZ2V7A 2.54 2.75 100 1000 20 1 50 1 VLZ2V7B 2.69 2.91 100 1000 20 1 50 1 VLZ3V0A 2.85 3.07 80 1000 20 1 50 1 VLZ3V0B 3.01 3.22 80 1000 20 1 10 1 VLZ3V3A 3.16 3.38 70 1000 20 1 10 1 VLZ3V3B 3.32 3.53 70 1000 20 1 10 1 VLZ3V6A 3.455 3.695 60 1000 20 1 5 1 VLZ3V6B 3.6 3.845 60 1000 20 1 5 1 VLZ3V9A 3.74 4.01 50 1000 20 1 3 1 VLZ3V9B 3.89 4.16 50 1000 20 1 3 1 VLZ4V3A 4.04 4.29 40 1000 20 1 3 1 VLZ4V3B 4.17 4.43 40 1000 20 1 3 1 VLZ4V3C 4.3 4.57 40 1000 20 1 3 1 VLZ4V7A 4.44 4.68 25 900 20 1 10 2 µA V max VLZ4V7B 4.55 4.8 25 900 20 1 6 2 VLZ4V7C 4.68 4.93 25 900 20 1 3 2 VLZ5V1A 4.81 5.07 20 800 20 1 2 2 VLZ5V1B 4.94 5.2 20 800 20 1 2 2 VLZ5V1C 5.09 5.37 20 800 20 1 2 2 VLZ5V6A 5.28 5.55 13 500 20 1 1 2 VLZ5V6B 5.45 5.73 13 500 20 1 1 2 VLZ5V6C 5.61 5.91 13 500 20 1 1 2 VLZ6V2A 5.78 6.09 10 300 20 1 3 4 4 VLZ6V2B 5.96 6.27 10 300 20 1 3 VLZ6V2C 6.12 6.44 10 300 20 1 3 4 VLZ6V8A 6.29 6.63 8 150 20 0.5 2 4 4 VLZ6V8B 6.49 6.83 8 150 20 0.5 2 VLZ6V8C 6.66 7.01 8 150 20 0.5 2 4 VLZ7V5A 6.85 7.22 8 120 20 0.5 3 6.5 VLZ7V5B 7.07 7.45 8 120 20 0.5 3 6.73 VLZ7V5C 7.29 7.67 8 120 20 0.5 3 6.93 VLZ8V2A 7.53 7.92 8 120 20 0.5 7.5 7.15 VLZ8V2B 7.78 8.19 8 120 20 0.5 7.5 7.39 VLZ8V2C 8.03 8.45 8 120 20 0.5 7.5 7.63 VLZ9V1A 8.29 8.73 8 120 20 0.5 0.04 7.88 VLZ9V1B 8.57 9.01 8 120 20 0.5 0.04 8.14 VLZ9V1C 8.83 9.3 8 120 20 0.5 0.04 8.39 VLZ10A 9.12 9.59 8 120 20 0.5 0.04 8.66 VLZ10B 9.41 9.9 8 120 20 0.5 0.04 8.94 VLZ10C 9.7 10.2 8 120 20 0.5 0.04 9.22 VLZ10D 9.94 10.44 8 120 20 0.5 0.04 9.44 VLZ11A 10.18 10.71 10 120 10 0.5 0.04 9.67 VLZ11B 10.5 11.05 10 120 10 0.5 0.04 9.98 VLZ11C 10.82 11.38 10 120 10 0.5 0.04 10.28 www.vishay.com 2 VZ at IZT Document Number 81759 Rev. 1.0, 15-Aug-07 VLZ-Series Vishay Semiconductors Zener Voltage Partnumbergroup VLZ12 VLZ13 VLZ15 VLZ16 VLZ18 VLZ20 VLZ22 VLZ24 VLZ27 VLZ30 VLZ33 VLZ36 Partnumber VZ at IZT Dynamic Resistance Test Current ZZ at IZT ZZK at IZK IZT IZK mA mA Reverse Leakage Current IR at VR V V Ω Ω min max max max VLZ12A 11.13 11.71 12 110 10 0.5 0.04 VLZ12B 11.44 12.03 12 110 10 0.5 0.04 10.9 VLZ12C 11.74 12.35 12 110 10 0.5 0.04 11.2 VLZ13A 12.11 12.75 14 110 10 0.5 0.04 11.5 VLZ13B 12.55 13.21 14 110 10 0.5 0.04 11.9 VLZ13C 12.99 13.66 14 110 10 0.5 0.04 12.3 VLZ15A 13.44 14.13 16 110 10 0.5 0.04 12.8 VLZ15B 13.89 14.62 16 110 10 0.5 0.04 13.2 VLZ15C 14.35 15.09 16 110 10 0.5 0.04 13.6 14.1 µA V max 10.6 VLZ16A 14.8 15.57 18 150 10 0.5 0.04 VLZ16B 15.25 16.04 18 150 10 0.5 0.04 14.5 VLZ16C 15.69 16.51 18 150 10 0.5 0.04 14.9 VLZ18A 16.22 17.06 23 150 10 0.5 0.04 15.4 VLZ18B 16.82 17.7 23 150 10 0.5 0.04 16 VLZ18C 17.42 18.33 23 150 10 0.5 0.04 16.5 VLZ20A 18.02 18.96 28 200 10 0.5 0.04 17.1 VLZ20B 18.63 19.59 28 200 10 0.5 0.04 17.7 VLZ20C 19.23 20.22 28 200 10 0.5 0.04 18.3 VLZ20D 19.72 20.72 28 200 10 0.5 0.04 18.7 VLZ22A 20.15 21.2 30 200 5 0.5 0.04 19.1 VLZ22B 20.64 21.71 30 200 5 0.5 0.04 19.6 VLZ22C 21.08 22.17 30 200 5 0.5 0.04 20 VLZ22D 21.52 22.63 30 200 5 0.5 0.04 20.4 VLZ24A 22.05 23.18 35 200 5 0.5 0.04 20.9 VLZ24B 22.61 23.77 35 200 5 0.5 0.04 21.5 VLZ24C 23.12 24.31 35 200 5 0.5 0.04 22 VLZ24D 23.63 24.85 35 200 5 0.5 0.04 22.4 VLZ27A 24.26 25.52 45 250 5 0.5 0.04 23 VLZ27B 24.97 26.26 45 250 5 0.5 0.04 23.7 VLZ27C 25.63 26.95 45 250 5 0.5 0.04 24.3 VLZ27D 26.29 27.64 45 250 5 0.5 0.04 25 VLZ30A 26.99 28.39 55 250 5 0.5 0.04 25.6 VLZ30B 27.7 29.13 55 250 5 0.5 0.04 26.3 VLZ30C 28.36 29.82 55 250 5 0.5 0.04 26.9 VLZ30D 29.02 30.51 55 250 5 0.5 0.04 27.6 VLZ33A 29.68 31.22 65 250 5 0.5 0.04 28.2 VLZ33B 30.32 31.88 65 250 5 0.5 0.04 28.8 VLZ33C 30.9 32.5 65 250 5 0.5 0.04 29.4 VLZ33D 31.49 33.11 65 250 5 0.5 0.04 29.9 VLZ36A 32.14 33.79 75 250 5 0.5 0.04 30.5 VLZ36B 32.79 34.49 75 250 5 0.5 0.04 31.2 VLZ36C 33.4 35.13 75 250 5 0.5 0.04 31.7 VLZ36D 34.01 35.77 75 250 5 0.5 0.04 32.3 Document Number 81759 Rev. 1.0, 15-Aug-07 www.vishay.com 3 VLZ-Series Vishay Semiconductors Zener Voltage Partnumbergroup Dynamic Resistance VZ at IZT Partnumber Test Current Reverse Leakage Current ZZ at IZT ZZK at IZK IZT IZK mA mA IR at VR V V Ω Ω min max max max VLZ39A 34.68 36.47 85 250 5 0.5 0.04 32.9 VLZ39B 35.36 37.19 85 250 5 0.5 0.04 33.6 VLZ39C 36 37.85 85 250 5 0.5 0.04 34.2 VLZ39D 36.63 38.52 85 250 5 0.5 0.04 34.8 VLZ39E 37.36 39.29 85 250 5 0.5 0.04 35.5 VLZ39F 38.14 40.11 85 250 5 0.5 0.04 36.2 VLZ39G 38.94 40.8 85 250 5 0.5 0.04 37 VLZ43 VLZ43 40 45 90 - 5 - 0.04 38 VLZ47 VLZ47 44 49 90 - 5 - 0.04 41.8 VLZ51 VLZ51 48 54 100 - 5 - 0.04 45.6 VLZ56 VLZ56 53 60 100 - 5 - 0.04 50.4 VLZ39 µA V max Typical Characteristics 600 VZtn - Relative Voltage Change 1.3 500 400 300 200 100 0 0 95 9602 80 120 160 200 40 Tamb - Ambient Temperature (°C) Figure 1. Total Power Dissipation vs. Ambient Temperature VZ - Voltage Change (mV) 1000 Tj = 25 °C 100 IZ = 5 mA 10 1 0 95 9598 5 10 15 20 25 VZ - Z-Voltage (V) Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb = 25°C www.vishay.com 4 VZtn = VZt/VZ (25 °C) 1.2 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 4 x 10-4/K 2 x 10-4/K 1.0 0 - 2 x 10-4/K - 4 x 10-4/K 0.9 0.8 - 60 95 9599 0 60 120 180 240 Tj - Junction Temperature (°C) Figure 3. Typical Change of Working Voltage vs. Junction Temperature TKVZ - Temperature Coefficient of VZ (10-4/K) Ptot - Total Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 15 10 5 IZ = 5 mA 0 -5 0 95 9600 10 20 40 30 VZ - Z-Voltage (V) 50 Figure 4. Temperature Coefficient of Vz vs. Z-Voltage Document Number 81759 Rev. 1.0, 15-Aug-07 VLZ-Series Vishay Semiconductors 50 VR = 2 V Tj = 25 °C 100 50 0 0 10 5 15 20 30 20 10 0 15 25 VZ - Z-Voltage (V) 95 9601 20 95 9607 25 35 30 VZ - Z-Voltage (V) Figure 8. Z-Current vs. Z-Voltage Figure 5. Diode Capacitance vs. Z-Voltage 1000 rZ - Differential Z-Resistance (Ω) 100 IF - Forward Current (mA) Ptot = 500 mW Tamb = 25 °C 40 150 IZ - Z-Current (mA) CD - Diode Capacitance (pF) 200 10 Tj = 25 °C 1 0.1 0.01 0.001 0 100 5 mA 10 10 mA Tj = 25 °C 1 0.2 0.4 0.6 0.8 0 1.0 95 9606 VF - Forward Voltage (V) 95 9605 IZ = 1 mA Figure 6. Forward Current vs. Forward Voltage 5 10 15 20 25 VZ - Z-Voltage (V) Figure 9. Differential Z-Resistance vs. Z-Voltage 100 IZ - Z-Current (mA) 80 Ptot = 500 mW Tamb = 25 °C 60 40 20 0 0 95 9604 4 12 6 8 VZ - Z-Voltage (V) 20 Figure 7. Z-Current vs. Z-Voltage Document Number 81759 Rev. 1.0, 15-Aug-07 www.vishay.com 5 VLZ-Series Zthp - Thermal Resistance for Pulse Cond. (KW) Vishay Semiconductors 1000 tP/T = 0.5 100 tP/T = 0.2 Single Pulse 10 RthJA = 300 K/W T = Tjmax - Tamb tP/T = 0.01 tP/T = 0.1 tP/T = 0.02 tP/T = 0.05 1 10-1 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 101 102 tP - Pulse Length (ms) 95 9603 Figure 10. Thermal Response Package Dimensions in millimeters (inches): QuadroMELF SOD80 96 12071 www.vishay.com 6 Document Number 81759 Rev. 1.0, 15-Aug-07 VLZ-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81759 Rev. 1.0, 15-Aug-07 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1