VISHAY VO3062

VO3062, VO3063
Vishay Semiconductors
Phototriac, Zero Crossing,
1.5 kV/µs dV/dt, 600 V
FEATURES
• 1500 V/µs dV/dt minimum
A 1
6 MT2
C 2
5 NC
• 600 V blocking voltage
• 100 mA on-state current
NC 3
i179030
ZCC*
4 MT1
*Zero crossing circuit
• Zero crossing detector
• Low input trigger current
• 6 pin DIP package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
APPLICATIONS
• Household appliances
DESCRIPTION
• Triac drive/AC motor drives
The VO3062/3063 triac driver family consists of a GaAs
infrared LED optically coupled to a monolithic photosensitive
zero crossing triac detector chip.
The 600 V blocking voltage permits control of off-line
voltages up to 240 VAC, with a safety factor of more than
two, and is sufficient for as much as 380 V.
• Solenoid/valve controls
• Office automation equipment/machine
• Temperature (HVAC)/lighting controls
• Switching power supply
AGENCY APPROVALS
• UL1577, file no. E52744 system code U/J
• CUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• BSI IEC 60950
ORDER INFORMATION
PART
REMARKS
VO3063
DIP-6, ZC, 600 V, Ift = 5 mA
VO3062
DIP-6, ZC, 600 V, Ift = 10 mA
VO3063-X006
DIP-6 400 mil, ZC, 600 V, Ift = 5 mA
VO3062-X006
DIP-6 400 mil, ZC, 600 V, Ift = 10 mA
VO3063-X007T
SMD-6, ZC, 600 V, Ift = 5 mA
VO3062-X007T
SMD-6, ZC, 600 V, Ift = 10 mA
Note
For additional information on the available options refer to option information.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current - continuous
IF
60
mA
Pdiss
100
mW
VDRM
600
V
ITSM
1
A
Pdiss
200
mW
IT(RMS)
100
mA
Power dissipation
OUTPUT
Off state output terminal voltage
Peak repetitive surge current
Power dissipation
On-state RMS current
Document Number: 83748
Rev. 1.6, 23-Oct-08
VO3062/3063
PW = 100 ms, 120 pps
For technical questions, contact: [email protected]
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927
VO3062, VO3063
Phototriac, Zero Crossing,
1.5 kV/µs dV/dt, 600 V
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
COUPLER
Isolation test voltage
VISO
5300
VRMS
Total power dissipation
t=1s
Ptot
300
mW
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Tsld
260
°C
maximum ≤ 10 s
Soldering temperature
Note
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
120
Load Current (mA)
100
80
IF = 10 mA
60
40
20
0
- 40 - 20
21353
0
20
40
60
80
100
Temperature (°C)
Fig. 1 - On-State Current (RMS) vs. Temperature
Note
The allowable load current was calculated out under a given operating conditions and only for reference:
LED power: QE = 0.015 W, RBA (2-layer) = 72 °C/W
THERMAL CHARACTERISTICS
SYMBOL
VALUE
UNIT
Maximum LED junction temperature
PARAMETER
TEST CONDITION
Tjmax
125
°C
Maximum output die junction temperature
Tjmax
125
°C
Thermal resistance, junction emitter to board
θJEB
150
°C/W
Thermal resistance, junction emitter to case
θJEC
139
°C/W
Thermal resistance, junction detector to board
θJDB
78
°C/W
Thermal resistance, junction detector to case
θJDC
103
°C/W
Thermal resistance, junction emitter to junction detector
θJED
496
°C/W
Thermal resistance, case to ambient
θCA
3563
°C/W
Note
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB,
layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of
Optocouplers Application note.
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928
For technical questions, contact: [email protected]
Document Number: 83748
Rev. 1.6, 23-Oct-08
VO3062, VO3063
Phototriac, Zero Crossing,
1.5 kV/µs dV/dt, 600 V
Vishay Semiconductors
TA
θCA
Package
TC
θEC
θDC
θDE
TJD
TJE
θDB
θEB
TB
θBA
19996
TA
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
10
µA
1.2
1.5
V
10
500
INPUT
Reverse current
VR = 6 V
IR
Forward voltage
IF = 30 mA
VF
OUTPUT
Leakage with LED off, either direction
Critical rate of rise off-state voltage
VDRM = 600 V
IDRM
VD = 400 V
dV/dt
1500
2000
nA
V/µs
COUPLER
LED trigger current,
current required to latch output
VO3063
IFT
5
mA
VO3062
IFT
10
mA
3
V
ITM = 100 mA Peak,
IF = Rated IFT
Peak on-state voltage,
either direction
Holding current, either direction
Inhibit voltage (MT1-MT2 voltage
above which device will not trigger)
IF = 10 mA maximum,
at rated VDRM, off state
Leakage in inhibited state
VTM
1.7
IH
200
VINH
12
22
V
VDRM2
250
1000
µA
µA
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
Climatic classification
Pollution degree
Maximum working insulation voltage
MIN.
TYP.
IEC 68 part 1
40/85/21
DIN VDE 0109
2
Comparative tracking index per DIN IEC 112/VDE 0303 part 1,
group IIIa per DIN VDE 6110 175 399
Highest allowable overvoltage
SYMBOL
CTI
175
Transient
overvoltage
VIOTM
8000
Recurring peak
voltage
VIORM
890
MAX.
UNIT
Vpeak
Vpeak
Insulation resistance at 25 °C
VIO = 500 V
RIS
≥
Insulation resistance at TS
VIO = 500 V
RIS
≥ 109
Ω
Insulation resistance at 100 °C
VIO = 500 V
RIS
≥ 1011
Ω
Document Number: 83748
Rev. 1.6, 23-Oct-08
For technical questions, contact: [email protected]
1012
Ω
www.vishay.com
929
VO3062, VO3063
Phototriac, Zero Crossing,
1.5 kV/µs dV/dt, 600 V
Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
Partial discharge test voltage
Method a,
Vpd = VIORM x 1.875
Safety limiting values maximum values allowed in the
event of a failure
MIN.
TYP.
MAX.
UNIT
Vpd
1325
Vpeak
Safety power rating
PSO
400
mW
Safety current rating
ISI
150
mA
Safety temperature rating
TSI
165
°C
Minimum external air gap (clearance)
Measured from input
terminals to output
terminals, shortest
distance through air
≥7
mm
Minimum external tracking (creepage)
Measured from input
terminals to output
terminals, shortest
distance path along
body
≥7
mm
Note
As per IEC 60747-5-2, 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of prodective circuits.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
100
On-State Current ITM (mA)
VF - Forward Voltage (V)
1.4
1.3
Ta = - 40 °C
1.2
Ta = 25 °C
1.1
Ta = 85 °C
1.0
0.9
1
10
60
40
20
0
- 20
- 40
- 60
- 80
- 100
- 2 - 1.5 - 1 - 0.5
0.8
19620
80
100
19605
IF - Forward Current (mA)
0
0.5
1
1.5
2
On-State Voltage VTM (V)
Fig. 2 - Forward Voltage vs. Forward Current
Fig. 4 - On-State Current vs. VTM
1000
1.4
Trigger Current
1.2
Ilkg (nA)
100
10
1.0
0.8
0.6
0.4
0.2
1
- 40 - 20
19619
0
0
20
40
60
80
100
Temperature (°C)
Fig. 3 - Off-State Leakage Current vs. Temperature
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930
- 40
19621
10
60
110
Temperature (°C)
Fig. 5 - Normalized Trigger Current vs. Temperature
For technical questions, contact: [email protected]
Document Number: 83748
Rev. 1.6, 23-Oct-08
VO3062, VO3063
Phototriac, Zero Crossing,
1.5 kV/µs dV/dt, 600 V
15
Turn-on Time (µs)
Turn-on Time (µs)
100
10
12
9
6
3
1
5
19618
8
11
14
17
0
- 40
20
19602
LED Current (mA)
Fig. 6 - Turn-on Time vs. LED Current
- 20
0
20
40
60
80
100
Temperature (°C)
Fig. 8 - Turn-on Time vs. Temperature
2.0
5.0
1.8
4.5
1.6
4.0
1.4
IFT (mA)
Holding Current
Vishay Semiconductors
1.2
1.0
3.5
3.0
0.8
2.5
0.6
0.4
- 40 - 20
2.0
0
20
40
60
80
100
20
Temperature (°C)
19608
19609
Fig. 7 - Normalized Holding Current vs. Temperature
40
60
80
100
Pulse Width (µs)
Fig. 9 - Trigger Current vs. Pulse Width
PACKAGE DIMENSIONS in inches (millimeters)
Option 6
Pin one ID
3
2
1
4
5
6
0.407 (10.36)
0.391 (9.96)
0.307 (7.8)
0.291 (7.4)
0.248 (6.30)
0.256 (6.50)
ISO method A
0.335 (8.50)
20°
0.343 (8.70)
0.039
(1.00 )
min .
typ .
0.130 (3.30)
0.150 (3.81)
Option 7
4°
typ .
18°
0.033 (0.84) typ.
0.018 (0.46)
0.020 (0.51)
i178014_1
0.014 (0.35)
0.010 (0.25)
0.400 (10.16)
0.430 (10.92)
0.300 (7.62)
0.048 (1.22)
0.052 (1.32)
0.033 (0.84) typ.
0.100 (2.54) typ.
3° - 9°
0.008 (0.20)
0.012 (0.30)
0.300 (7.62)
TYP.
0.130 (3.30)
0.150 (3.81)
0.028 (0.7)
0.180 (4.6)
0.160 (4.1)
0.300 to 0.347
(7.62 to 8.81)
0.315 (8.0)
min..
0.331 (8.4)
min.
0.406 (10.3)
max.
Document Number: 83748
Rev. 1.6, 23-Oct-08
For technical questions, contact: [email protected]
www.vishay.com
931
VO3062, VO3063
Vishay Semiconductors
Phototriac, Zero Crossing,
1.5 kV/µs dV/dt, 600 V
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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For technical questions, contact: [email protected]
Document Number: 83748
Rev. 1.6, 23-Oct-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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