VISHAY VS-12CWQ06FNTRPBF

VS-12CWQ06FNPbF
Vishay Semiconductors
Schottky Rectifier, 2 x 6 A
FEATURES
Base
common
cathode
4
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
2
Common
cathode
1
3
Anode
Anode
D-PAK (TO-252AA)
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
D-PAK (TO-252AA)
IF(AV)
2x6A
VR
60 V
VF at IF
0.57 V
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
IRM
35 mA at 125 °C
TJ max.
150 °C
Diode variation
Common cathode
EAS
7 mJ
The VS-12CWQ06FNPbF surface mount, center tap,
Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VALUES
UNITS
12
A
60
V
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
320
A
VF
6 Apk, TJ = 125 °C (per leg)
0.57
V
TJ
Range
- 55 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VS-12CWQ06FNPbF
UNITS
60
V
VR
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
TEST CONDITIONS
per leg
UNITS
6
IF(AV)
50 % duty cycle at TC = 131 °C, rectangular waveform
per device
A
12
Following any rated
load condition and with
rated VRRM applied
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 1.2 A, L = 10 mH
Repetitive avalanche current per leg
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
Document Number: 94134
Revision: 14-Jan-11
VALUES
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
320
A
105
7
mJ
0.8
A
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VS-12CWQ06FNPbF
Schottky Rectifier, 2 x 6 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
6A
Maximum forward
voltage drop per leg
See fig. 1
VFM (1)
TJ = 25 °C
12 A
6A
TJ = 125 °C
12 A
Maximum reverse
leakage current per leg
See fig. 2
IRM (1)
Threshold voltage
VF(TO)
TJ = 25 °C
VALUES
UNITS
0.61
0.79
V
0.57
0.72
3
VR = Rated VR
TJ = 125 °C
mA
35
TJ = TJ maximum
0.36
V
Forward slope resistance
rt
24.14
m
Typical junction capacitance per leg
CT
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C
360
pF
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body
5.0
nH
VALUES
UNITS
- 55 to 150
°C
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to case
per leg
per device
RthJC
TEST CONDITIONS
DC operation
See fig. 4
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
3.0
1.5
°C/W
0.3
g
0.01
oz.
12CWQ06FN
Note
(1)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94134
Revision: 14-Jan-11
VS-12CWQ06FNPbF
Schottky Rectifier, 2 x 6 A
100
Vishay Semiconductors
100
IR - Reverse Current (mA)
IF - Instantaneous Forward
Current (A)
TJ = 150 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0
VFM - Forward Voltage Drop (V)
10
20
30
50
40
60
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0
10
20
30
40
50
60
70
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
PDM
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
.
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Document Number: 94134
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
VS-12CWQ06FNPbF
Schottky Rectifier, 2 x 6 A
Vishay Semiconductors
6
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
150
145
Average Power Loss (W)
Allowable Case Temperature (°C)
155
DC
140
135
130
Square wave (D = 0.50)
80 % rated VR applied
125
120
115
5
4
RMS limit
3
2
DC
1
See note (1)
110
0
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
100
At any rated load condition
and with rated VRRM applied
following surge
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94134
Revision: 14-Jan-11
VS-12CWQ06FNPbF
Schottky Rectifier, 2 x 6 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
12
C
W
Q
06
FN
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (12 A)
3
-
Center tap configuration-
4
-
Package identifier:
TRL PbF
8
9
W = D-PAK
4
5
-
Schottky “Q” series
6
-
Voltage rating (06 = 60 V)
7
-
FN = TO-252AA
8
-
None = Tube (50 pieces)
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
9
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95016
Part marking information
www.vishay.com/doc?95059
Packaging information
www.vishay.com/doc?95033
SPICE model
www.vishay.com/doc?95278
Document Number: 94134
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
Outline Dimensions
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Vishay Semiconductors
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
A
E
b3
Pad layout
C
A
(3)
0.010 M C A B
c2
A
L3 (3)
Ø1
4
Ø2
4
B
Seating
plane
H
D (5)
1
2
3
(2) L5
b
1
A
c
b2
0.06
MIN.
(1.524)
0.010 M C A B
0.093 (2.38)
0.085 (2.18)
(L1)
Detail “C”
Rotated 90 °CW
Scale: 20:1
H (7)
Lead tip
C
Gauge
plane
L2
SYMBOL
2
0.488 (12.40)
0.409 (10.40)
0.089
MIN.
(2.28)
Detail “C”
2x e
0.245
MIN.
(6.23)
D1
L4
3
0.265
MIN.
(6.74)
E1
MILLIMETERS
INCHES
C Seating
plane
C
Ø
L
NOTES
A1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
MIN.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
1.40
1.78
0.055
0.070
2.29 BSC
MIN.
MAX.
0.090 BSC
b
0.64
0.89
0.025
0.035
L
b2
0.76
1.14
0.030
0.045
L1
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
L3
0.89
1.27
0.035
0.050
c2
0.46
0.89
0.018
0.035
L4
-
1.02
-
0.040
3
2.74 BSC
L2
0.51 BSC
NOTES
0.108 REF.
0.020 BSC
D
5.97
6.22
0.235
0.245
5
L5
1.14
1.52
0.045
0.060
D1
5.21
-
0.205
-
3
Ø
0°
10°
0°
10°
E
6.35
6.73
0.250
0.265
5
Ø1
0°
15°
0°
15°
E1
4.32
-
0.170
-
3
Ø2
25°
35°
25°
35°
3
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC outline TO-252AA
Revision: 05-Dec-12
Document Number: 95016
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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Revision: 02-Oct-12
1
Document Number: 91000