N06T
WFP70
P70N
Silicon N-Channel MOSFET
Features
�
68A,60V, RDS(on)(Max18mΩ)@VGS=10V
�
Ultra-low Gate charge(Typical 20nC)
�
Improved dv/dt capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(175℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,DMOS technology.This latest technology has been especially
designed to minimize on-state resistance, have a low gate charge
with superior switching performance, and rugged avalanche
characteristics,DC-DC Converters and power management in
portable and,battery operated products.
Absolute Maximum Ratings
Symbol
VDSS
Value
Units
Drain Source Voltage
Parameter
60
V
Continuous Drain Current(@Tc=25℃)
68
A
Continuous Drain Current(@Tc=100℃)
51
A
280
A
±25
V
ID
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
800
mJ
Peak Diode Recovery dv /dt
(Note3)
7.0
V/ ns
Total Power Dissipation(@Tc=25℃)
115
W
Derating Factor above 25℃
0.77
W/℃
-55~175
℃
300
℃
dv/dt
(Note1)
PD
TJ,Tstg
Junction and Storage Temperature
Maximum Lead Temperature for soldering purpose,
TL
1/8 form Case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
1.3
℃/W
RQCS
Thermal Resistance , Case-to-Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
N06T
WFP70
P70N
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
IGSS
Drain cut -off current
IDSS
Test Condition
Min
Typ
Max
Unit
VGS=±20V,V DS=0V
-
-
±100
nA
VDS=48V,V GS=0V
-
-
1
µA
VDS=48V,V GS=0V,TJ=125℃
Drain -source breakdown voltage
V(BR)DSS
Breakdown voltage Temperature
△BVDSS/△
Coefficient
TJ
100
ID=250 µA,VGS=0V
60
-
-
V
-
0.066
-
V/℃
2.0
-
4.0
V
18
mΩ
ID=250µA,Referenced to
25℃
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=35A
-
-
Input capacitance
Ciss
VDS=25V,
-
1088
Reverse transfer capacitance
Crss
VGS=0V,
-
67
Output capacitance
Coss
f=1MHz
-
158
VDD=30V,
-
45.1
ID=1A
-
8.7
tf
VG=10V
-
6.8
Td(off)
RG=50Ω
-
25.6
-
20
-
7
-
-
6.8
-
Rise time
tr
Turn-in Delay time
Switching time
Td(on)
Fall time
Turn-off Delay time
pF
ns
(Note4,5)
Total gate charge(gate-source
VDD=30V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=1A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
Integral Reverse p-n Junction
-
-
68
A
Pulse drain reverse current
IDRP
Diode in the MOSFET
-
-
280
A
Forward voltage(diode)
VDSF
IDR=50A,VGS=0V
-
-
1.2
V
Reverse recovery time
trr
IDR=68A,VGS=0V,
-
62
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
110
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=250uH IAS=68A,VDD=25V,R G=0Ω,Starting TJ=25℃
3.ISD≤68A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
N06T
WFP70
P70N
Fig.1 On State Characteristics
Fig.2 Transfer Characteristics
Fig.3 On Resistance Variation Vs
Drain Current and Gate Voltage
Fig.4 On State Current vs Allowable
Fig.5Chpacitance Characteristics
Fig.6 Gate Charge Characteristics
case Temperature
3/7
Steady, keep you advance
N06T
WFP70
P70N
Fig.7Breakdown Voltage Variation
vs,Junction temperature
Fig.9 Maximum Safe Operation Area
Fig.8 On-Resistance Variation vs
Junction temperature
Fig.10 Maximum Drain Current
vs Case temperature
Fig.11 Transient thermal Response Curve
Steady, keep you advance
4/7
N06T
WFP70
P70N
Fig.12 Gate Test circuit & Waveform
Fig.13 Resistive Switching Test Circuit & Waveform
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
5/7
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N06T
WFP70
P70N
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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N06T
WFP70
P70N
TO-220 Package Dimension
Unit:mm
7/7
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