WTX1012 N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead(Pb)-Free 1 2 FEATURES: * Power Mosfet : 1.8V Rated * Gate-Source ESD Protected: 2000 V * High-Side Switching * Low On-Resistance: 0.7Ω * Low Threshold: 0.8 V (typ) * Fast Switching Speed: 10 ns SC-89 Drain 3 BENEFITS: * Ease in Driving Switches * Low-Voltage Operation * High-Speed Circuits * Low Battery Voltage Operation 1 (Top View) Gate 2 Source APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits * Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 6 Continuous Drain Current (TJ = 150 C)b TA = 25 C Pulsed Drain Currenta Maximum Power 600 500 400 350 IDM Continuous Source Current (diode conduction)b Dissipationb IS TA = 25 C TA = 85 C PD TA = 25 C for SC-89 SC 89 Operating Junction and Storage Temperature Range V ID TA = 85 C Maximum Power Dissipationb for SC-75 SC 75 Unit TA = 85 C mA 1000 275 250 175 150 90 80 275 250 160 140 mW TJ, Tstg −55 to 150 C ESD 2000 V Gate-Source ESD Rating (HBM, Method 3015) Notes d. Pulse width limited by maximum junction temperature. e. Surface Mounted on FR4 Board. Device Marking WTX1012 = A WEITRON http://www.weitron.com.tw 1/6 31-Mar-09 WTX1012 Electrical Characteristics (TA=25°C Unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit 0.9 V Static Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VDS = VGS, ID = 250 A VDS = 0 V, VGS = 0.45 4.5 V 0.5 VDS = 20 V, VGS = 0 V 0.3 VDS = 20 V, VGS = 0 V, TJ = 85 C ID(on) VDS = 5 V, VGS = 4.5 V 1.0 100 nA 5 A 700 mA VGS = 4.5 V, ID = 600 mA 0.41 0.70 VGS = 2.5 V, ID = 500 m A 0.53 0.85 VGS = 1.8 V, ID = 350 m A 0.70 1.25 gfs VDS = 10 V, ID = 400 mA 1.0 VSD IS = 150 mA, VGS = 0 V 0.8 rDS(on) A S 1.2 V 2 Dynamic Total Gate Charge Qg 750 VDS = 10 V, VGS = 4.5 V, ID = 250 mA Gate-Source Charge Qgs Gate-Drain Charge Qgd 225 Turn-On Delay Time td(on) 5 Rise Time Turn-Off Delay Time Fall Time tr td(off) ID VDD = 10 V, RL = 47 200 mA, VGEN = 4.5 V, RG = 10 tf 75 pC 5 25 ns 11 Notes 1. Pulse test; pulse width 300 s, duty cycle 2%. 2. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. WEITRON http://www.weitron.com.tw 2/6 31-Mar-09 WTX1012 Characteristics Curve 1200 1.0 TC = −55 C 1000 VGS = 5 thru 1.8 V ID - Drain Current (mA) I D − Drain Current (A) 0.8 0.6 0.4 0.2 25 C 800 125 C 600 400 200 1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS − Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 VGS − Gate-to-Source Voltage (V) Fig.2 Tr an s f er Ch ar ac t er i s t i c s Fig.1 Ou t p u t Ch ar ac t er i s t i c s 100 3.2 80 C − Capacitance (pF) r DS(on) − On-Resistance ( ) 4.0 2.4 1.6 VGS = 1.8 V 0.8 Ciss 60 40 Coss 20 VGS = 2.5 V VGS = 4.5 V 0.0 Crss 0 0 200 400 600 800 1000 0 4 ID − Drain Current (mA) 8 16 20 VDS − Drain-to-Source Voltage (V) Fig.3 On-Resistance vs. Drain Current Fig.4 Capacitance 5 1.60 VDS = 10 V ID = 250 mA rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 12 4 3 2 1 0 0.0 1.40 VGS = 4.5 V ID = 600 mA 1.20 VGS = 1.8 V ID = 350 mA 1.00 0.80 0.2 0.4 0.6 0.60 −50 0.8 −25 0 25 50 75 100 125 Qg − Total Gate Charge (nC) TJ − Junction Temperature ( C) Fig.5 Gate Charge Fig.6 On-Resistance vs. Junction Temperature WEITRON http://www.weitron.com.tw 3/6 31-Mar-09 WTX1012 Characteristics Curve 5 1000 TJ = 125 C r DS(on) − On-Resistance ( I S − Source Current (mA) ) 4 100 TJ = 25 C TJ = −55 C 10 ID = 350 mA 3 ID = 200 mA 2 1 0 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 VSD − Source-to-Drain Voltage (V) Fig.7 So u r c e-Dr ai n Di o d e Fo r w ar d Vo l t ag e 3 4 5 6 Fig.8 On -Res i s t an c e v s . Gat e-t o -So u r c e Vo l t ag e 0.3 3.0 0.2 2.5 ID = 0.25 mA 0.1 2.0 IGSS − ( A) V GS(th) Variance (V) 2 VGS − Gate-to-Source Voltage (V) −0.0 1.5 −0.1 1.0 −0.2 0.5 VGS = 4.5 V −0.3 −50 −25 0 25 50 75 100 0.0 −50 125 −25 0 25 50 75 TJ − Temperature ( C) Fig.9 Threshold Voltage Variance vs. Temperature Fig.10 IGSS vs. Temperature BVGSS − Gate-to-Source Breakdown Voltage (V) TJ − Temperature ( C) 100 125 7 6 5 4 3 2 1 0 −50 −25 0 25 50 75 100 125 T − Temperature ( C) Fig.11 BVGSS vs. Temperature WEITRON http://www.weitron.com.tw 4/6 31-Mar-09 WTX1012 Characteristic Curves Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 833 C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Fig.12 Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Fig.13 Normalized Thermal Transient Impedance, Junction-to-Foot WEITRON http://www.weitron.com.tw 5/6 31-Mar-09 WTX1012 SC-89 Outline Demensions Unit:mm A SC-89 Dim A B C D G J K M N S 3 T OP V IE W 2 1 K B S G D N M C WEITRON http://www.weitron.com.tw J 6/6 Min 1.50 0.75 0.60 0.23 0.10 0.30 ----1.50 Nom 1.60 0.85 0.70 0.28 0.50BSC 0.15 0.40 ----1.60 Max 1.70 0.95 0.80 0.33 0.20 0.50 10 10 1.70 31-Mar-09