Si7456DP Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 9.3 0.028 @ VGS = 6.0 V 8.8 APPLICATIONS D Primary Side Switch for High Density DC/DC D Telecom/Server 48-V, Full-/Half-Bridge DC/DC D Industrial and 42-V Automotive PowerPAK SO-8 D S 6.15 mm 1 2 5.15 mm S 3 S 4 G G D 8 7 D 6 D 5 S D N-Channel MOSFET Bottom View Ordering Information: Si7456DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 100 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current Avalanche Current Single Avalanche Energy (Duty Cycle v1%) L = 0.1 0 1 mH Continuous Source Current (Diode Conduction)a TA = 85_C Operating Junction and Storage Temperature Range 5.7 6.7 4.1 40 IAS 30 EAS PD V 9.3 IDM IS TA = 25_C Maximum Power Dissipationa ID 45 A mJ 4.3 1.6 5.2 1.9 2.7 1.0 TJ, Tstg Unit - 55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 19 24 52 65 1.5 1.8 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71603 S-31989—Rev. D, 13-Oct-03 www.vishay.com 1 Si7456DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 85_C 20 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea nA mA 40 VDS w 5 V, VGS = 10 V rDS(on) V A VGS = 10 V, ID = 9.3 A 0.021 0.025 VGS = 6.0 V, ID = 8.8 A 0.023 0.028 gfs VDS = 15 V, ID = 9.3 A 35 VSD IS = 4.3 A, VGS = 0 V 0.8 1.2 36 44 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 50 V, VGS = 10 V, ID = 9.3 A 10 nC 8.6 0.5 1.27 2.1 td(on) 20 40 tr 10 20 46 90 26 50 50 80 VDD = 50 V, RL = 50 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 4.3 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 40 40 VGS = 10 thru 6 V 5V 32 I D - Drain Current (A) I D - Drain Current (A) 32 24 16 8 24 16 TC = 125_C 8 25_C - 55_C 4V 0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 71603 S-31989—Rev. D, 13-Oct-03 Si7456DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 3500 3000 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.04 0.03 VGS = 6.0 V 0.02 VGS = 10 V Ciss 2500 2000 1500 1000 0.01 Crss 500 0.00 Coss 0 0 8 16 24 32 40 0 10 ID - Drain Current (A) 30 40 50 60 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 2.6 VDS = 50 V ID = 9.3 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 20 8 6 4 VGS = 10 V ID = 9.3 A 2.3 2.0 1.7 1.4 1.1 2 0.8 0 0 6 12 18 24 30 0.5 - 50 36 - 25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 50 0.08 40 TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ - Junction Temperature (_C) 0.06 ID = 9.3 A 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71603 S-31989—Rev. D, 13-Oct-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7456DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.5 50 40 ID = 250 mA Power (W) V GS(th) Variance (V) 0.0 - 0.5 - 1.0 30 20 10 - 1.5 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 TJ - Temperature (_C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 52_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 0.0001 www.vishay.com 4 0.001 0.01 Square Wave Pulse Duration (sec) 0.1 1 Document Number: 71603 S-31989—Rev. D, 13-Oct-03