Si4483EDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET D ESD Protection: 3000 V rDS(on) (W) ID (A) 0.0085 @ VGS = −10 V −14 APPLICATIONS 0.014 @ VGS = −4.5 V −11 D Notebook PC − Load Switch − Adapter Switch S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G 7100 W Top View P-Channel D Ordering Information: Si4483EDY-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −30 Gate-Source Voltage VGS "25 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V −14 −10 −11 −8 IDM −50 −2.7 −1.36 3.0 1.5 1.9 0.95 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 33 42 70 85 16 21 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72862 S-42139—Rev. B, 15-Nov-04 www.vishay.com 1 Si4483EDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −1.0 Typ Max Unit 3.0 V VDS = 0 V, VGS = "4.5 V "1 mA VDS = 0 V, VGS = "25 V "10 mA Static Gate Threshold Voltage Gate Body Leakage Gate-Body IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea Diode Forward Voltagea −1 −10 VDS = −5 V, VGS = −10 V mA −30 A VGS = −10 V, ID = −14 A 0.007 0.0085 VGS = −4.5 V, ID = −11 A 0.0115 0.014 gfs VDS = −15 V, ID = −14 A 60 VSD IS = −2.7 A, VGS = 0 V −0.74 −1.1 td(on) 10 15 tr 20 30 42 65 50 80 rDS(on) DS( ) Forward Transconductancea VDS = −30 V, VGS = 0 V VDS = −30 V, VGS = 0 V, TJ = 70_C W S V Dynamicb Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = −15 V, RL = 15 W ID ^ −1 A, VGEN = −10 V, Rg = 6 W td(off) Fall Time tf ms Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 100 8 IGSS − Gate Current (mA) IGSS − Gate Current (mA) 10 6 4 2 TJ = 150_C 1 TJ = 25_C 0.1 0.01 0.001 0.0001 0 0 5 10 15 20 25 VGS − Gate-to-Source Voltage (V) www.vishay.com 2 30 0 6 12 18 24 30 VGS − Gate-to-Source Voltage (V) Document Number: 72862 S-42139—Rev. B, 15-Nov-04 Si4483EDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 4 V 3V 40 I D − Drain Current (A) I D − Drain Current (A) 40 30 20 10 30 20 TC = 125_C 10 25_C 0 0 1 2 3 4 0 0.0 5 0.5 VDS − Drain-to-Source Voltage (V) 0.016 2.5 3.0 3.5 1.4 0.012 VGS = 4.5 V 0.008 VGS = 10 V rDS(on) − On-Resiistance (Normalized) r DS(on) − On-Resistance ( W ) 2.0 On-Resistance vs. Junction Temperature 1.6 0.004 1.2 1.0 0.8 0.000 0 10 20 30 40 0.6 −50 50 ID − Drain Current (A) 0 25 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.05 50 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 1 TJ = 25_C 0.1 0.0 −25 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage I S − Source Current (A) 1.5 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.020 1.0 −55_C 0.04 ID = 14 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72862 S-42139—Rev. B, 15-Nov-04 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4483EDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.8 50 40 ID = 250 mA 0.4 30 Power (W) V GS(th) Variance (V) 0.6 0.2 20 0.0 10 −0.2 −0.4 −50 −25 0 25 50 75 100 125 0 0.01 150 0.1 1 TJ − Temperature (_C) 10 100 600 Time (sec) 100 Safe Operating Area, Junction-to-Case *Limited by rDS(on) I D − Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72862 S-42139—Rev. B, 15-Nov-04 Si4483EDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72862. Document Number: 72862 S-42139—Rev. B, 15-Nov-04 www.vishay.com 5