Si1034X New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 1.5ĆV Rated FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers Low-Side Switching Low On-Resistance: 5 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns (typ) 1.5-V Operation Gate-Source ESD Protection Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SC-89 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code: L Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "5 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 85_C Pulsed Drain Currentb Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS TA = 25_C TA = 85_C PD V 180 140 IDM Continuous Source Current (diode conduction) Maximum Power Dissipationa 190 ID Unit 130 mA 650 450 380 280 250 145 130 mW TJ, Tstg –55 to 150 _C ESD 2000 V Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71427 S-03201—Rev. A, 12-Mar-01 www.vishay.com 1 Si1034X New Product Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.40 Typ Max Unit 1.2 V Static Gate Threshold Voltage Gate-Body Leakage IGSS VDS = 0 V, VGS = "2.8 V "0.5 "1.0 VDS = 0 V, VGS = "4.5 V "1.0 "3.0 1 500 VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS = 16 V, VGS = 0 V, TJ = 85_C Forward Transconductancea Diode Forward Voltagea mA 5 VGS = 2.5 V, ID = 175 m A 7 VGS = 1.8 V, ID = 150 m A 9 VDS = 1.5 V, ID = 40 mA 10 VDS = 10 V, ID = 200 mA VSD IS = 150 mA, VGS = 0 V mA 250 VGS = 4.5 V, ID = 200 mA gfs nA 10 VDS = 5 V, VGS = 4.5 V rDS(on) m mA W 0.5 S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time 750 VDS = 10 V, VGS = 4.5 V, ID = 150 mA 50 25 VDD = 10 V, RL = 47 W ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W td(off) Fall Time pC 225 tr Turn-Off Delay Time 75 ns 50 tf 25 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 0.5 600 TJ = –55_C VGS = 5 thru 1.8 V 500 I D – Drain Current (mA) I D – Drain Current (A) 0.4 0.3 0.2 0.1 25_C 400 125_C 300 200 100 1V 0.0 0 1 2 3 4 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 5 6 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS – Gate-to-Source Voltage (V) Document Number: 71427 S-03201—Rev. A, 12-Mar-01 Si1034X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 100 VGS = 0 V f = 1 MHz C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 40 30 20 VGS = 1.8 V 80 Ciss 60 40 10 Coss 20 VGS = 2.5 V VGS = 4.5 V 0 Crss 0 0 50 100 150 200 250 0 4 ID – Drain Current (mA) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.60 VDS = 10 V ID = 150 mA r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 12 VDS – Drain-to-Source Voltage (V) 5 4 3 2 1.40 VGS = 4.5 V ID = 200 mA 1.20 VGS = 1.8 V ID = 175 mA 1.00 0.80 1 0 0.0 0.2 0.4 0.6 0.60 –50 0.8 –25 Qg – Total Gate Charge (nC) 0 25 50 75 100 125 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 1000 ID = 200 mA r DS(on) – On-Resistance ( W ) TJ = 125_C I S – Source Current (mA) 8 100 TJ = 25_C TJ = 50_C 10 40 ID = 175 mA 30 20 10 1 0.0 0 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71427 S-03201—Rev. A, 12-Mar-01 1.2 1.4 0 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si1034X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Threshold Voltage Variance vs. Temperature IGSS vs. Temperature 0.3 3.0 2.5 ID = 0.25 mA 0.1 2.0 IGSS – (mA) V GS(th) Variance (V) 0.2 –0.0 1.5 –0.1 1.0 –0.2 0.5 VGS = 2.8 V –0.3 –50 –25 0 25 50 75 100 0.0 –50 125 –25 0 TJ – Temperature (_C) 25 50 75 100 125 TJ – Temperature (_C) BVGSS – Gate-to-Source Breakdown Voltage (V) BVGSS vs. Temperature 7 6 5 4 3 2 1 0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 500_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71427 S-03201—Rev. A, 12-Mar-01