Composite Transistors XN1117 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1117 × 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 ■ Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 4 0.95 ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.9 -0.05 ● 5 1.9±0.1 ■ Features 1.5 -0.05 ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO –50 V VCEO –50 V IC –100 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0.1 to 0.3 0.4±0.2 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: OL Internal Connection 5 Tr1 1 4 3 ■ Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage 2 (Ta=25˚C) Symbol Conditions min VCBO IC = –10µA, IE = 0 –50 –50 typ max Unit V VCEO IC = –2mA, IB = 0 ICBO VCB = –50V, IE = 0 ICEO VCE = –50V, IB = 0 – 0.5 µA IEBO VEB = –6V, IC = 0 – 0.01 mA Forward current transfer ratio hFE VCE = –10V, IC = –5mA 160 Forward current transfer hFE ratio hFE (small/large)*1 VCE = –10V, IC = –5mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ Output voltage low level VOL VCC = –5V, VB = –2.5V, RL = 1kΩ Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz Input resistance R1 Collector cutoff current Emitter cutoff current *1 Tr2 V – 0.1 460 0.99 – 0.25 –4.9 V V – 0.2 80 –30% µA 22 V MHz +30% kΩ Ratio between 2 elements 1 Composite Transistors XN1117 PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE VCE(sat) — IC –100 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA Collector current IC (mA) –100 –80 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE –12 IC/IB=10 –30 –10 –3 Ta=75˚C –1 –0.3 25˚C –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 (V) –10 –10000 –30 300 200 25˚C –25˚C 0 –1 –100 Ta=75˚C 100 (mA) –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 5 Output current IO (µA) Collector output capacitance Cob (pF) –3 VCE= –10V IO — VIN f=1MHz IE=0 Ta=25˚C –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2 –1 Collector current IC Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –120 –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100