PANASONIC XP4315

Composite Transistors
XP4315
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
Unit: mm
For switching/digital circuits
1
6
2
5
3
4
●
+0.05
0.12 –0.02
0 to 0.1
■ Basic Part Number of Element
0.7±0.1
0.9±0.1
0.2
●
Two elements incorporated into one package.
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
0.425
0.65
●
2.0±0.1
■ Features
1.25±0.1
0.65
0.425
0.2±0.05
2.1±0.1
UN1215+UN1115
■ Absolute Maximum Ratings
Parameter
(Ta=25˚C)
1 : Emitter (Tr1)
4 : Emitter (Tr2)
2 : Base (Tr1)
5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
100
mA
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–100
mA
1
Total power dissipation
PT
150
mW
2
Overall Junction temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
Tr1
Tr2
Storage temperature
0.2±0.1
Marking Symbol: CB
Internal Connection
3
Tr1
6
5
Tr2
4
1
Composite Transistors
■ Electrical Characteristics
●
(Ta=25˚C)
Tr1
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
50
V
ICBO
VCB = 50V, IE = 0
0.1
µA
ICEO
VCE = 50V, IB = 0
0.5
µA
Emitter cutoff current
IEBO
VEB = 6V, IC = 0
0.01
mA
Forward current transfer ratio
hFE
VCE = 10V, IC = 5mA
Collector cutoff current
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 0.3mA
Output voltage high level
VOH
VCC = 5V, VB = 0.5V, RL = 1kΩ
Output voltage low level
VOL
VCC = 5V, VB = 2.5V, RL = 1kΩ
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
Input resistance
R1
●
160
460
0.25
4.9
V
V
0.2
150
V
MHz
–30%
10
+30%
kΩ
min
typ
max
Unit
Tr2
Parameter
Collector to base voltage
Collector to emitter voltage
Symbol
Conditions
VCBO
IC = –10µA, IE = 0
–50
–50
V
VCEO
IC = –2mA, IB = 0
ICBO
VCB = –50V, IE = 0
ICEO
VCE = –50V, IB = 0
– 0.5
µA
IEBO
VEB = –6V, IC = 0
– 0.01
mA
Forward current transfer ratio
hFE
VCE = –10V, IC = –5mA
Collector to emitter saturation voltage
VCE(sat)
IC = –10mA, IB = – 0.3mA
Output voltage high level
VOH
VCC = –5V, VB = – 0.5V, RL = 1kΩ
Output voltage low level
VOL
VCC = –5V, VB = –2.5V, RL = 1kΩ
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
Input resistance
R1
Collector cutoff current
Emitter cutoff current
2
XP4315
V
– 0.1
160
460
– 0.25
–4.9
V
V
– 0.2
80
–30%
µA
10
V
MHz
+30%
kΩ
Composite Transistors
XP4315
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of Tr1
IC — VCE
VCE(sat) — IC
100
120
0.7mA
0.6mA
0.5mA
100
0.4mA
80
0.3mA
60
0.2mA
40
0.1mA
20
0
0
2
4
6
8
10
12
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
–25˚C
0.01
0.1
0.3
1
3
10
Ta=75˚C
250
200
25˚C
150
–25˚C
100
50
30
1
100
3
4
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
300
0
Cob — VCB
5
VCE=10V
350
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
Collector current IC (mA)
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
140
Collector to emitter saturation voltage VCE(sat) (V)
160
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
100
VCB (V)
1
0.4
0.03
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
100
Output current IO (mA)
3
Composite Transistors
XP4315
Characteristics charts of Tr2
IC — VCE
VCE(sat) — IC
–100
IB=–1.0mA
Collector current IC (mA)
–140
–120
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–100
–0.5mA
–0.4mA
–80
–0.3mA
–60
–0.2mA
–40
–0.1mA
–20
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
VCE= –10V
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–1
Cob — VCB
–10000
–30
200
25˚C
–25˚C
100
0
–1
–100
–3
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
4
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
4
–10
Ta=75˚C
IO — VIN
f=1MHz
IE=0
Ta=25˚C
5
–3
300
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–160
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100