NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature (°C) Collector-Base Voltage Transient Thermal Resistance Derating curve 0 0.1ms 1ms 10ms 100ms 1s 10s 100s -40 0 40 80 120 160 200 SPICE PARAMETERS *ZETEX ZTX1056A Spice model Last revision 24/1/95 * .MODEL ZTX1056A NPN IS=1.41E-12 NF=1.0 BF=600 IKF=2.0 VAF=120 + ISE=4.0E-13 NE=1.4 NR=1.0 BR=80 IKR=2.5 VAR=10 + + ISC=6.0E-10 NC=1.7 RB=0.1 RE=0.065 RC=0.015 CJC=53.1E-12 CJE=508.6E-12 MJC=0.461 MJE=0.350 + VJC=0.461 VJE=0.679 TF=800E-12 TR=110E-9 * 1995 ZETEX PLC The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Facsimile: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 87 Modular Avenue Commack NY11725 Telephone: (516) 543-7100 Fax: (516) 864-7630 E E-Line TO92 Compatible re tu D=0.1 0.50 ra pe 80 60 C B m te D=0.5 0.75 t en bi tp 120 Am Max Power Dissipation - (Watts) D=1(D.C) 160 100 ISSUE 3 JANUARY 1995 FEATURES * VCEO=160V * 3 Amp Continuous Current * 6 Amp Pulse Current * Low Saturation Voltage 1.0 180 ZTX1056A Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1995 This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. VALUE UNIT VCBO 200 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 3 A Base Current IB 500 mA Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ZTX1056A ZTX1056A TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 200 Collector-Emitter Breakdown Voltage VCES Collector-Emitter Breakdown Voltage VCEO Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 310 V IC=100µA 200 310 V IC=100µA 160 190 V IC=10mA 0.7 0.8 +25C 0.7 0.6 VCEV 200 310 V IC=100µA, VEB=1V 5 8.8 V IE=100µA ICBO 0.3 10 nA VCB=150V Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V Collector Emitter Cut-Off Current ICES 0.3 10 nA VCES=150V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.2 0.2 0.1 0.1 60 140 250 300 mV mV mV mV IC=0.1A, IB=5mA* IC=1A, IB=50mA* IC=2A, IB=100mA* IC=3A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 950 1050 mV IC=3A, IB=200mA* Base-Emitter Turn-On Voltage VBE(on) 860 950 mV IC=3A, VCE=10V* Static Forward Current Transfer Ratio hFE 100mA 1A 1mA 10A IC-Collector Current 700 1.0 +100°C fT 420 450 400 120 50 15 1200 120 Output Capacitance Cobo 14 Switching Times ton 110 toff 2450 IC=10mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* IC=2A, VCE=10V* IC=3A, VCE=10V* IC=6A, VCE=10V* +25°C 0.6 0.4 -55°C 200 MHz 25 IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz ns IC=1A, IB=10mA, VCC=50V ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% IC=1A, IB=±10mA, VCC=50V -55°C +25°C +100°C +175°C 0.2 100 1mA 10mA 100mA 1A 1mA 10A 0.6 0.4 10 1A 10A Single Pulse Test Tamb=25C -55°C 1 +25°C +100°C 0.1 +175°C 0.2 1mA 100mA VBE(sat) v Ic VCE=10V 0.8 10mA IC-Collector Current hFE v IC 1.0 10A Ic/IB=20 0.8 400 300 1A VCE(sat) v IC VCE=10V 500 100mA IC-Collector Current IC-Collector Current 275 300 250 60 30 10mA VCE(sat) v IC 600 25 95 175 220 0.4 0.3 10mA - 55°C +25°C +100°C +175°C 0.5 Ic/IB=15 Ic/IB=20 Ic/IB=50 1mA Collector Cut-Off Current Ic/IB=20 0.6 0.5 0.4 Emitter-Base Breakdown V(BR)EBO Voltage Transition Frequency 0.8 10mA 100mA 1A 10A 0.01 0.1V DC 1s 100ms 10ms 1ms 100us 1V 10V IC-Collector Current VCE - Collector Voltage VBE(on) v IC Safe Operating Area 100V ZTX1056A ZTX1056A TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 200 Collector-Emitter Breakdown Voltage VCES Collector-Emitter Breakdown Voltage VCEO Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 310 V IC=100µA 200 310 V IC=100µA 160 190 V IC=10mA 0.7 0.8 +25C 0.7 0.6 VCEV 200 310 V IC=100µA, VEB=1V 5 8.8 V IE=100µA ICBO 0.3 10 nA VCB=150V Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V Collector Emitter Cut-Off Current ICES 0.3 10 nA VCES=150V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.2 0.2 0.1 0.1 60 140 250 300 mV mV mV mV IC=0.1A, IB=5mA* IC=1A, IB=50mA* IC=2A, IB=100mA* IC=3A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 950 1050 mV IC=3A, IB=200mA* Base-Emitter Turn-On Voltage VBE(on) 860 950 mV IC=3A, VCE=10V* Static Forward Current Transfer Ratio hFE 100mA 1A 1mA 10A IC-Collector Current 700 1.0 +100°C fT 420 450 400 120 50 15 1200 120 Output Capacitance Cobo 14 Switching Times ton 110 toff 2450 IC=10mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* IC=2A, VCE=10V* IC=3A, VCE=10V* IC=6A, VCE=10V* +25°C 0.6 0.4 -55°C 200 MHz 25 IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz ns IC=1A, IB=10mA, VCC=50V ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% IC=1A, IB=±10mA, VCC=50V -55°C +25°C +100°C +175°C 0.2 100 1mA 10mA 100mA 1A 1mA 10A 0.6 0.4 10 1A 10A Single Pulse Test Tamb=25C -55°C 1 +25°C +100°C 0.1 +175°C 0.2 1mA 100mA VBE(sat) v Ic VCE=10V 0.8 10mA IC-Collector Current hFE v IC 1.0 10A Ic/IB=20 0.8 400 300 1A VCE(sat) v IC VCE=10V 500 100mA IC-Collector Current IC-Collector Current 275 300 250 60 30 10mA VCE(sat) v IC 600 25 95 175 220 0.4 0.3 10mA - 55°C +25°C +100°C +175°C 0.5 Ic/IB=15 Ic/IB=20 Ic/IB=50 1mA Collector Cut-Off Current Ic/IB=20 0.6 0.5 0.4 Emitter-Base Breakdown V(BR)EBO Voltage Transition Frequency 0.8 10mA 100mA 1A 10A 0.01 0.1V DC 1s 100ms 10ms 1ms 100us 1V 10V IC-Collector Current VCE - Collector Voltage VBE(on) v IC Safe Operating Area 100V NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature (°C) Collector-Base Voltage Transient Thermal Resistance Derating curve 0 0.1ms 1ms 10ms 100ms 1s 10s 100s -40 0 40 80 120 160 200 SPICE PARAMETERS *ZETEX ZTX1056A Spice model Last revision 24/1/95 * .MODEL ZTX1056A NPN IS=1.41E-12 NF=1.0 BF=600 IKF=2.0 VAF=120 + ISE=4.0E-13 NE=1.4 NR=1.0 BR=80 IKR=2.5 VAR=10 + + ISC=6.0E-10 NC=1.7 RB=0.1 RE=0.065 RC=0.015 CJC=53.1E-12 CJE=508.6E-12 MJC=0.461 MJE=0.350 + VJC=0.461 VJE=0.679 TF=800E-12 TR=110E-9 * 1995 ZETEX PLC The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Facsimile: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 87 Modular Avenue Commack NY11725 Telephone: (516) 543-7100 Fax: (516) 864-7630 E E-Line TO92 Compatible re tu D=0.1 0.50 ra pe 80 60 C B m te D=0.5 0.75 t en bi tp 120 Am Max Power Dissipation - (Watts) D=1(D.C) 160 100 ISSUE 3 JANUARY 1995 FEATURES * VCEO=160V * 3 Amp Continuous Current * 6 Amp Pulse Current * Low Saturation Voltage 1.0 180 ZTX1056A Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1995 This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. VALUE UNIT VCBO 200 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 3 A Base Current IB 500 mA Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C