NPN SILICON PLANAR R.F. MEDIUM POWER TRANSISTOR ZTX3866 ISSUE 2 MARCH 94 FEATURES * 1W POUT at 175 MHz, 28V, 18dB typical * 1W POUT at 400 MHz, 28V, 9.7dB typical * High Ptot * High efficiency C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 55 V Collector-Emitter Voltage VCEO 30 V Collector-Emitter Voltage VCER 55 V Emitter-Base Voltage VEBO 3.5 V Continuous Collector Current ICM 400 mA 350 mW -55 to +175 °C Power Dissipation Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 55 TYP. MAX. V IC=100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO(sus) 30 V IC=5mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 3.5 V IE=100µ A, IE=0 Collector Emitter Cut-Off Current ICEO 20 µA VCB=28V, IB=0 Collector-Emitter Saturation Voltage VCE(sat) 1.0 V IC=100mA, IB=20mA Collector-Emitter Sustaining Voltage V(BR)CER(sus) 55 V IC=5mA, RBE=10Ω Static Forward Current Transfer hFE 15 Transitional Frequency fT 400 700 200 3.0 IC=50mA, VCE=5V MHz IC=25mA, VCE=15V f=100MHz Output Capacitance Cobo pF VCB=30V, IE=0, f=1MHz R.F. Power Output POUT 700 900 mW Efficiency η 50 70 % VCC=28V, PIN=100mW f=400MHz PAGE NO