PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX537C ISSUE 2 MARCH 94 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC -800 mA Power Dissipation at Tamb=25°C Ptot 750 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. -50 V IC=-100µ A V(BR)CEO -45 V IC=-100µ A Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A, IE=0 Collector Cut-Off Current ICBO -100 nA VCB=-45V Emitter Cut-Off Current IEBO -0.2 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.7 V IC=-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(on) -1.2 V IC=-300mA, VCE=-1V* Static Forward Current hFE Transfer Ratio MIN. TYP. 250 170 MAX. 630 IC=-100mA, VCE=-1V* IC=-300mA, VCE=-1V* Transition Frequency fT 200 MHz IC=-10mA, VCE=-5V f=50MHz Output Capacitance Cobo 12 pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-188