ZETEX ZTX537C

PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ZTX537C
ISSUE 2 – MARCH 94
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1
A
Continuous Collector Current
IC
-800
mA
Power Dissipation at Tamb=25°C
Ptot
750
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
UNIT
CONDITIONS.
-50
V
IC=-100µ A
V(BR)CEO
-45
V
IC=-100µ A
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-100µ A, IE=0
Collector Cut-Off
Current
ICBO
-100
nA
VCB=-45V
Emitter Cut-Off Current IEBO
-0.2
µA
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.7
V
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(on)
-1.2
V
IC=-300mA, VCE=-1V*
Static Forward Current hFE
Transfer Ratio
MIN. TYP.
250
170
MAX.
630
IC=-100mA, VCE=-1V*
IC=-300mA, VCE=-1V*
Transition Frequency
fT
200
MHz
IC=-10mA, VCE=-5V
f=50MHz
Output Capacitance
Cobo
12
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-188