ZETEX ZTX776

PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ZTX776
ISSUE 1 – JULY 94
FEATURES
* 200 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
C
B
REFER TO ZTX755 FOR GRAPHS
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-200
V
Collector-Emitter Voltage
VCEO
-200
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb=25°C
derate above Tamb=25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-200
MAX.
V
IC=-100µ A, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-200
V
IC=-10mA, IB=0*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
V
IE=-100µ A, IC=0
Collector Cut-Off
Current
ICBO
-100
nA
VCB=-160V, IE=0
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-4V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5
-0.5
V
V
IC=-500mA, IB=-50mA*
IC=-1A, IB=-200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.1
V
IC=-500mA, IB=-50mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-1.0
V
IC=-500mA, VCE=-5V*
Static Forward Current
Transfer Ratio
hFE
50
50
20
Transition
Frequency
fT
30
Output Capacitance
Cobo
IC=-10mA, VCE=-5V
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
20
MHz
IC=-10mA, VCE=-20V
f=20MHz
pF
VCB=-20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3-270