DIODES ZUMT617

Super323 SOT323 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ZUMT617
ISSUE 1 - SEPTEMBER 1998
FEATURES
*
500mW POWER DISSIPATION
*
*
*
*
IC CONT 1.5A
5A Peak Pulse Current
Excellent HFE Characteristics Up To 5A (pulsed)
Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
*
DC-DC converter boost functions
*
Motor drive functions
DEVICE TYPE
COMPLEMENT
PARTMARKING
RCE(sat)
ZUMT617
ZUMT717
T61
135mΩ at 1.5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
15
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current**
ICM
5
A
Continuous Collector Current
IC
1.5
A
Base Current
IB
200
mA
Power Dissipation at Tamb =25°C*
Ptot
385 †
500 ‡
mW
-55 to +150
°C
Operating and Storage Temperature Tj:Tstg
Range
† Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT617
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
UNIT
CONDITIONS.
15
V
IC= 100µA
V(BR)CEO
15
V
IC= 10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE= 100µA
Collector Cut-Off
Current
ICBO
10
nA
VCB= 10V
Emitter Cut-Off
Current
IEBO
10
nA
VEB= 4V
Collector Emitter
Cut-Off Current
ICES
10
nA
VCES= 10V
Collector-Emitter
Saturation Voltage
VCE(sat)
16.5
40
75
150
205
20
55
100
200
245
mV
mV
mV
mV
mV
IC= 100mA, IB=10mA*
IC= 250mA, IB= 10mA*
IC= 500mA, IB=10mA*
IC= 1A, IB=10mA*
IC= 1.5A, IB=20mA*
Base-Emitter
Saturation Voltage
VBE(sat)
930
1100
mV
IC= 1.5A, IB=20mA*
Base-Emitter Turn-On
Voltage
VBE(on)
865
1100
mV
IC= 1.5A, VCE= 2V*
Static Forward
Current Transfer
Ratio
hFE
Transition
Frequency
fT
180
MHz
IC= 50mA, VCE= 10V
f= 100MHz
Output Capacitance
Cobo
15
pF
VCB= 10V, f=1MHz
Turn-On Time
t(on)
50
ns
Turn-Off Time
t(off)
250
ns
VCC= 10V, IC= 1A
IB1=IB2=100mA
200
300
250
200
75
30
TYP.
MAX.
IC= 10mA, VCE= 2V*
IC= 100mA, VCE= 2V*
IC= 500mA, VCE=2V*
IC= 1A, VCE=2 V*
IC= 3A, VCE=2V*
IC=5A, VCE= 2V*
420
450
390
300
150
75
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZUMT617
TYPICAL CHARACTERISTICS
0.4
0.4
+25°C
IC/IB=50
0.3
IC/IB=10
IC/IB=50
IC/IB=100
VCE(sat) - (V)
VCE(sat) - (V)
0.3
0.2
0.1
0
-55°C
+25°C
+100°C
+150°C
0.2
0.1
1m
10m
100m
1
0
10
1m
10m
IC - Collector Current (A)
VCE(sat) v IC
800
100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
VCE=2V
IC/IB=50
600
+100°C
400
VBE(sat) - (V)
hFE - Typical Gain
1.0
+25°C
200
-55°C
0.75
0.5
0.25
0
0
1m
-55°C
+25°C
+100°C
+150°C
10m
100m
1
10
1m
IC - Collector Current (A)
hFE v IC
100m
1
10
10
IC - Collector Current (A)
1.0
0.8
VBE(on) - (V)
10m
IC - Collector Current (A)
VBE(sat) v IC
0.6
0.4
-55°C
+25°C
+100°C
+150°C
0.2
0
1m
10m
100m
1
IC - Collector Current (A)
VBE(on) v IC
10
1
100m
10m
100m
DC
1s
100ms
10ms
1ms
100us
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100