DIODES ZUMT717

Super323
 SOT323 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ZUMT717
ISSUE 1 - SEPTEMBER 1998
FEATURES
*
500mW POWER DISSIPATION
*
*
*
*
*
IC CONT 1.5A
3A Peak Pulse Current
Excellent HFE Characteristics Up To 3A (pulsed)
Extremely Low Saturation Voltage
Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
*
Negative boost functions in DC-DC converters
*
Supply line switching in mobile phones and pagers
*
Motor drivers in camcorders and mini disk players
DEVICE TYPE
COMPLEMENT
PARTMARKING
RCE(sat)
ZUMT717
ZUMT617
T71
150mΩ at 1.25A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-12
V
Collector-Emitter Voltage
VCEO
-12
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current**
ICM
-3
A
Continuous Collector Current
IC
-1.25
A
Base Current
IB
-200
mA
Power Dissipation at Tamb =25°C*
Ptot
385 †
500 ‡
mW
-55 to +150
°C
Operating and Storage Temperature Tj:Tstg
Range
† Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT717
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
-12
V
IC= -100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-12
V
IC= -10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE= -100µA
Collector Cut-Off
Current
ICBO
-10
nA
VCB=-10V
Emitter Cut-Off
Current
IEBO
-10
nA
VEB=-4V
Collector Emitter
Cut-Off Current
ICES
-10
nA
VCES=-10V
Collector-Emitter
Saturation Voltage
VCE(sat)
-25
-55
-110
-160
-185
-40
-100
-175
-215
-240
mV
mV
mV
mV
mV
IC= -0.1A, IB= -10mA*
IC= -0.25A, IB=-10 mA*
IC= -0.5A, IB=-10 mA*
IC= -1A, IB= -50mA*
IC= -1.25A, IB= -100mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-990
-1100 mV
IC= -1.25A, IB= -100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-850
-1000 mV
IC= -1.25A, VCE= 2V*
Static Forward
Current Transfer
Ratio
hFE
Transition
Frequency
fT
220
MHz
IC= -50mA, VCE=-10 V
f= 100MHz
Output Capacitance
Cobo
15
pF
VCB= -10V, f=1MHz
Turn-On Time
t(on)
50
ns
Turn-Off Time
t(off)
135
ns
VCC= -10V, IC=-1A
IB1=IB2=-100mA
300
300
200
125
75
30
TYP.
MAX. UNIT
CONDITIONS.
IC= -10mA, VCE=-2V*
IC= -0.1A, VCE= -2V*
IC= -0.5A, VCE= -2V*
IC= -1.25A, VCE=-2V*
IC= -2A, VCE= -2V*
IC= -3A, VCE= -2V*
490
450
340
250
140
80
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZUMT717
TYPICAL CHARACTERISTICS
0.4
0.4
+25°C
IC/IB=50
0.3
IC/IB=10
IC/IB=50
IC/IB=100
VCE(sat) - (V)
VCE(sat) - (V)
0.3
0.2
0.1
0
-55°C
+25°C
+100°C
+150°C
0.2
0.1
1m
10m
100m
1
0
10
1m
10m
IC - Collector Current (A)
VCE(sat) v IC
VCE=2V
1.0
600
+100°C
0.8
400
+25°C
200
-55°C
VBE(sat) - (V)
hFE - Typical Gain
800
10m
100m
1
0.4
-55°C
+25°C
+100°C
+150°C
10
1m
IC - Collector Current (A)
hFE v IC
10m
100m
1
10
IC - Collector Current (A)
VBE(sat) v IC
10
IC - Collector Current (A)
1.0
0.8
0.6
0.4
-55°C
+25°C
+100°C
+150°C
0.2
0
10
0.6
0
1m
1
IC/IB=50
0.2
0
VBE(on) - (V)
100m
IC - Collector Current (A)
VCE(sat) v IC
1m
10m
100m
1
IC - Collector Current (A)
VBE(on) v IC
10
1
100m
10m
100m
DC
1s
100ms
10ms
1ms
100µs
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100