ZETEX ZUMT817-40

SOT323 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ZUMT817-25
ZUMT817-40
ISSUE 2 – FEBRUARY 1999
PARTMARKING DETAILS
COMPLEMENTARY TYPES
ZUMT817-25 -
T7
ZUMT817-40 -
T23
ZUMT817-25 -
ZUMT807-25
ZUMT817-40 -
ZUMT807-40– T7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
1
A
Continuous Collector Current
IC
500
mA
Base Current
IB
100
mA
Peak Base Current
IBM
200
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Collector Cut-Off
Current
ICBO
0.1
5
Emitter Cut-Off Current
IEBO
10
A
VEB=5V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
700
mV
IC=500mA, IB=50mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1.2
V
IC=500mA, VCE=1V*
Static Forward
Current Transfer Ratio
hFE
-25
-40
MIN.
TYP.
MAX. UNIT CONDITIONS.
A
A
VCB=20V, IE=0
VCB=20V, IE=0, Tamb=150°C
100
40
600
IC=100mA, VCE=1V*
IC=500mA, VCE=1V*
160
400
IC=100mA, VCE=1V*
250
IC=100mA, VCE=1V*
600
Transition
Frequency
fT
200
MHz
IC=10mA, VCE=5V
f=35MHz
Collector-base
Capacitance
Cobo
5.0
pF
IE=Ie=0, VCB=10V
f=1MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%